公开(公告)号：US06949809B2

公开(公告)日：2005-09-27

申请号：US10283323

申请日：2002-10-30

申请人： Takahiro Takimoto ,  Isamu Ohkubo ,  Masaru Kubo ,  Hiroki Nakamura ,  Toshihiko Fukushima ,  Toshifumi Yoshikawa

发明人： Takahiro Takimoto ,  Isamu Ohkubo ,  Masaru Kubo ,  Hiroki Nakamura ,  Toshihiko Fukushima ,  Toshifumi Yoshikawa

IPC分类号： H01L27/14 ,  G01J1/02 ,  G11B7/00 ,  H01L31/00 ,  H01L31/06 ,  H01L31/10 ,  H01L31/103

CPC分类号： H01L31/103 ,  G11B7/13

摘要： A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.

摘要翻译： 一种光接收元件，包括半导体结构，该半导体结构至少包括第一导电类型半导体层，设置在半导体结构中的第一导电类型半导体层上的第一，第二导电类型半导体层，第二导电类型半导体层， 杂质浓度低于第一，第二导电类型半导体层，第二导电类型半导体层，设置在第二导电类型半导体层上的第二导电类型半导体层，或第二导电类型半导体层， 型半导体层。

公开(公告)号：US06404029B1

公开(公告)日：2002-06-11

申请号：US09656461

申请日：2000-09-06

申请人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

发明人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

IPC分类号： H01L2714

CPC分类号： H01L27/1443 ,  H01L31/0352

摘要： A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.

摘要翻译： 光敏器件包括半导体衬底和第一半导体层，它们都是第一导电型，半导体层形成在半导体衬底上，杂质浓度低于半导体衬底的半导体层。 第二导电类型的第二半导体层形成在第一半导体层上，并且从第二半导体层的表面形成至少一个第一导电类型的扩散层，以到达第一半导体层的表面 。 扩散层将第二半导体层细分为多个半导体区域在多个半导体区域和第一半导体层中的至少一个之间的接合处形成至少一个用于将信号光转换成电信号的光电二极管部分。 当向至少一个光电二极管部分施加反向偏置电压时，在第一半导体层中形成的耗尽层具有约0.3V / m 2以上的场强度。

公开(公告)号：US06380603B1

公开(公告)日：2002-04-30

申请号：US09707158

申请日：2000-11-07

申请人： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

发明人： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

IPC分类号： H01L3106

CPC分类号： H01L31/02024 ,  H01L27/144

摘要： A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.

摘要翻译： 半导体器件包括：基本上由第一导电类型的半导体多层结构和第二导电类型的第一半导体层之间的PN结组成的感光部分; 以及用于将感光部分分成多个区域的分隔部分。 第一导电类型的半导体多层结构包括：第一导电类型的半导体衬底; 第一导电类型的第一半导体层; 和第一导电类型的第二半导体层。 分隔部分包括从第二导电类型的第一半导体层延伸的第一导电类型的第三半导体层，以到达第一导电类型的第二半导体层。

公开(公告)号：US07485924B2

公开(公告)日：2009-02-03

申请号：US11509717

申请日：2006-08-25

申请人： Takahiro Takimoto ,  Hiroki Nakamura ,  Toshihiko Fukushima

发明人： Takahiro Takimoto ,  Hiroki Nakamura ,  Toshihiko Fukushima

IPC分类号： H01L29/92

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0886 ,  H01L29/42368 ,  H01L29/66681

摘要： In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.

摘要翻译： 在本发明的横向双扩散场效应晶体管中，栅极绝缘膜包括覆盖源极扩散层直到超过体漫射层图案的区域的第一栅极绝缘膜和具有膜的第二栅极绝缘膜 厚度大于第一栅极绝缘膜的厚度，并且覆盖比由第一栅极绝缘膜覆盖的区域更靠近漏极扩散层的区域。 第一栅极绝缘膜和第二栅极绝缘膜之间的边界由平行于物体扩散层的图案的一侧的直线部分和从身体扩散层的图案的顶点围绕的角部 。 身体扩散层的图案的顶点与边界的角部之间的距离等于或小于身体扩散层的图案的一侧与边界的直线部分之间的距离。

公开(公告)号：US20070063271A1

公开(公告)日：2007-03-22

申请号：US11509717

申请日：2006-08-25

申请人： Takahiro Takimoto ,  Hiroki Nakamura ,  Toshihiko Fukushima

发明人： Takahiro Takimoto ,  Hiroki Nakamura ,  Toshihiko Fukushima

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0886 ,  H01L29/42368 ,  H01L29/66681

摘要： In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.

摘要翻译： 在本发明的横向双扩散场效应晶体管中，栅极绝缘膜包括覆盖源极扩散层直到超过体漫射层图案的区域的第一栅极绝缘膜和具有膜的第二栅极绝缘膜 厚度大于第一栅极绝缘膜的厚度，并且覆盖比由第一栅极绝缘膜覆盖的区域更靠近漏极扩散层的区域。 第一栅极绝缘膜和第二栅极绝缘膜之间的边界由平行于物体扩散层的图案的一侧的直线部分和从身体扩散层的图案的顶点围绕的角部 。 身体扩散层的图案的顶点与边界的角部之间的距离等于或小于身体扩散层的图案的一侧与边界的直线部分之间的距离。

公开(公告)号：US20060157781A1

公开(公告)日：2006-07-20

申请号：US11332164

申请日：2006-01-17

申请人： Takahiro Takimoto ,  Toshihiko Fukushima

发明人： Takahiro Takimoto ,  Toshihiko Fukushima

IPC分类号： H01L29/76

CPC分类号： H01L29/7816 ,  H01L29/0873 ,  H01L29/0878

摘要： The lateral double-diffused MOS transistor includes a drift region of a first conductive type provided on a semiconductor substrate of a second conductive type, and a body diffusion region of the second conductive type formed on the surface within the drift region. The MOS transistor includes a gate electrode formed in such a position as it covers from part of the body diffusion region to part of the drift region located outside the diffusion region via an insulating film. The MOS transistor further includes a source diffusion region of the first conductive type and a drain diffusion region of the first conductive type formed on top of the body diffusion region and top of the drift region, respectively, both of which correspond to both sides of the gate electrode. The drain diffusion region includes a deep diffusion portion which has a 1/1000 or more concentration of a peak concentration of the source diffusion region and which is positioned deeper than the source diffusion region.

摘要翻译： 横向双扩散MOS晶体管包括设置在第二导电类型的半导体衬底上的第一导电类型的漂移区域和形成在漂移区域内的表面上的第二导电类型的体扩散区域。 MOS晶体管包括形成在其从身体扩散区的一部分经由绝缘膜位于扩散区外部的漂移区的一部分覆盖的位置处的栅电极。 MOS晶体管还包括分别形成在体扩散区域和漂移区域顶部上的第一导电类型的源极扩散区域和第一导电类型的漏极扩散区域，两者都对应于 栅电极。 漏极扩散区域包括深度扩散部分，其具有源极扩散区域的峰值浓度的1/1000或更高的浓度，并且位于比源极扩散区域更深的位置。

公开(公告)号：US07245243B2

公开(公告)日：2007-07-17

申请号：US11332164

申请日：2006-01-17

申请人： Takahiro Takimoto ,  Toshihiko Fukushima

发明人： Takahiro Takimoto ,  Toshihiko Fukushima

IPC分类号： H03M1/48

CPC分类号： H01L29/7816 ,  H01L29/0873 ,  H01L29/0878

摘要： The lateral double-diffused MOS transistor includes a drift region of a first conductive type provided on a semiconductor substrate of a second conductive type, and a body diffusion region of the second conductive type formed on the surface within the drift region. The MOS transistor includes a gate electrode formed in such a position as it covers from part of the body diffusion region to part of the drift region located outside the diffusion region via an insulating film. The MOS transistor further includes a source diffusion region of the first conductive type and a drain diffusion region of the first conductive type formed on top of the body diffusion region and top of the drift region, respectively, both of which correspond to both sides of the gate electrode. The drain diffusion region includes a deep diffusion portion which has a 1/1000 or more concentration of a peak concentration of the source diffusion region and which is positioned deeper than the source diffusion region.

摘要翻译： 横向双扩散MOS晶体管包括设置在第二导电类型的半导体衬底上的第一导电类型的漂移区域和形成在漂移区域内的表面上的第二导电类型的体扩散区域。 MOS晶体管包括形成在其从身体扩散区的一部分经由绝缘膜位于扩散区外部的漂移区的一部分覆盖的位置处的栅电极。 MOS晶体管还包括分别形成在体扩散区域和漂移区域顶部上的第一导电类型的源极扩散区域和第一导电类型的漏极扩散区域，两者都对应于 栅电极。 漏极扩散区域包括深度扩散部分，其具有源极扩散区域的峰值浓度的1/1000或更高的浓度，并且位于比源极扩散区域更深的位置。

公开(公告)号：US06492702B2

公开(公告)日：2002-12-10

申请号：US09820341

申请日：2001-03-29

申请人： Toshihiko Fukushima ,  Masaru Kubo ,  Shigeki Hayashida

发明人： Toshihiko Fukushima ,  Masaru Kubo ,  Shigeki Hayashida

IPC分类号： H01L31075

CPC分类号： H01L31/103 ,  H01L27/1443

摘要： A circuit-incorporating light receiving device comprises a first semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a diffusion region of the second conductivity type, provided in a first portion of the second semiconductor layer of the first conductivity type, a circuit element provided in the first portion of the first semiconductor layer of the first conductivity type and a second portion of the second semiconductor layer of the first conductivity type. The second semiconductor layer of the first conductivity type and the diffusion region of the second conductivity type form a light detection photodiode portion, and the diffusion region of the second conductivity type has a diffusion depth less than or equal to a penetration depth of short-wavelength signal light.

摘要翻译： 电路结合光接收装置包括第一导电类型的第一半导体衬底，第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的扩散区，设置在 第一导电类型的第二半导体层的第一部分，设置在第一导电类型的第一半导体层的第一部分中的电路元件和第一导电类型的第二半导体层的第二部分。 第一导电类型的第二半导体层和第二导电类型的扩散区域形成光检测光电二极管部分，并且第二导电类型的扩散区域具有小于或等于短波长穿透深度的漫射深度 信号灯。

公开(公告)号：US07995189B2

公开(公告)日：2011-08-09

申请号：US12542115

申请日：2009-08-17

申请人： Akifumi Yamaguchi ,  Masaru Kubo ,  Toshihiko Fukushima

发明人： Akifumi Yamaguchi ,  Masaru Kubo ,  Toshihiko Fukushima

IPC分类号： G01C3/08

CPC分类号： G01B11/026 ,  G01C3/08 ,  G01S7/481 ,  G01S17/48

摘要： An optical distance measuring sensor includes a light receiving element arranged on the same plane as a light emitting element. The light receiving element includes a light receiving unit having a plurality of cells and collecting the light emitted from the light emitting element and reflected by a target object, a flash memory unit storing a predetermined position on the light receiving unit, and a signal processing circuit unit sensing the collection position of the light on the light receiving unit, and measuring the distance to the target object based on a relative positional relationship between the predetermined position stored in the flash memory unit and the collection position of the light on light receiving unit.

摘要翻译： 光学距离测量传感器包括布置在与发光元件相同的平面上的光接收元件。 光接收元件包括具有多个单元并且收集从发光元件发射并被目标物体反射的光的光接收单元，在光接收单元上存储预定位置的闪存单元，以及信号处理电路 单元感测光接收单元上的光的收集位置，并且基于存储在闪存单元中的预定位置与光在光接收单元上的收集位置之间的相对位置关系来测量到目标对象的距离。

公开(公告)号：US06448614B2

公开(公告)日：2002-09-10

申请号：US09864861

申请日：2001-05-25

申请人： Masaru Kubo ,  Toshihiko Fukushima ,  Zenpei Tani

发明人： Masaru Kubo ,  Toshihiko Fukushima ,  Zenpei Tani

IPC分类号： H01L2972

CPC分类号： H01L27/1443

摘要： A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode includes a photosensitive layer formed of an SiGe layer.

摘要翻译： 一种电路结合光敏器件，包括：SOI晶片，包括第一硅衬底，第二硅衬底和氧化物膜; 形成在SOI晶片的第一区域中的光电二极管; 以及形成在SOI晶片的第二区域中的信号处理电路，其中所述光电二极管包括由SiGe层形成的感光层。