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133 条记录 (耗时 0.07 秒)

    Dram memory cell with a trench capacitor and method for production thereof
    72.
    发明授权
    Dram memory cell with a trench capacitor and method for production thereof 失效
    具有沟槽电容器的大容量存储单元及其制造方法

    公开(公告)号：US07223651B2

    公开(公告)日：2007-05-29

    申请号：US10479522

    申请日：2002-06-05

    申请人： Frank Richter ,  Dietmar Temmler ,  Andreas Wich-Glasen

    发明人： Frank Richter ,  Dietmar Temmler ,  Andreas Wich-Glasen

    IPC分类号： H01L21/8234

    CPC分类号： H01L27/10867 ,  H01L27/10832 ,  H01L27/10873

    摘要： A memory cell includes a selection transistor and a trench capacitor. The trench capacitor is filled with a conductive trench filling on which an insulating covering layer is arranged. The insulating covering layer is laterally overgrown, proceeding from the substrate with a selectively grown epitaxial layer. The selection transistor is formed in the selectively grown epitaxial layer, comprises a source region connected to the trench capacitor and a drain region connected to a bit line. The junction depth of the source region is chosen so that the source region reaches as far as the insulating covering layer. Optionally, the thickness of the epitaxial layer can be reduced to a thickness by oxidation and a subsequent etching. Afterwards, a contact trench is etched through the source region down to the conductive trench filling, which trench is filled with a conductive contact and electrically connects the conductive trench filling to the source region.

    摘要翻译： 存储单元包括选择晶体管和沟槽电容器。 沟槽电容器填充有绝缘覆盖层布置在其上的导电沟槽填充物。 绝缘覆盖层横向长满，从具有选择性生长的外延层的衬底开始。 选择晶体管形成在选择性生长的外延层中，包括连接到沟槽电容器的源极区域和连接到位线的漏极区域。 选择源极区域的结深度，使得源极区域达到绝缘覆盖层的深度。 任选地，可以通过氧化和随后的蚀刻将外延层的厚度减小到厚度。 之后，接触沟槽通过源极区域被蚀刻到导电沟槽填充物，该沟槽填充有导电接触并将导电沟槽填充物电连接到源极区域。

    Field effect transistor and method for fabricating it
    74.
    发明授权
    Field effect transistor and method for fabricating it 有权
    场效应晶体管及其制造方法

    公开(公告)号：US07119384B2

    公开(公告)日：2006-10-10

    申请号：US10482331

    申请日：2002-06-25

    申请人： Martin Popp ,  Frank Richter ,  Dietmar Temmler ,  Andreas Wich-Glasen

    发明人： Martin Popp ,  Frank Richter ,  Dietmar Temmler ,  Andreas Wich-Glasen

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/7854 ,  H01L29/66484 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/7851

    摘要： The invention relates to a field effect transistor in which the planar channel region on the upper surface of the elevation is extended in width by means of additional vertical channel regions on the lateral surfaces of the elevation. Said additional vertical channel regions connect directly to the planar channel region (vertical extended channel regions). Said field effect transistor has the advantage that a significant increase in the effective channel width for the current flow ION can be guaranteed relative to conventional transistor structures used up until the present, without having to accept a reduction in the achievable integration density. Said field effect transistor furthermore has a low reverse current IOFF. The above advantages are achieved without the thickness of the gate insulators up to the region of the charge transfer tunnels having to be reduced or a reduced stability.

    摘要翻译： 本发明涉及一种场效应晶体管，其中，通过在该高度的侧面上的另外的垂直沟道区，在该高度的上表面上的平面通道区域的宽度被延伸。 所述另外的垂直通道区域直接连接到平面通道区域（垂直扩展通道区域）。 所述场效应晶体管的优点在于，相对于直到现在使用的常规晶体管结构，可以保证电流I ON的有效沟道宽度的显着增加，而不必接受 可实现的集成密度。 所述场效应晶体管还具有低反向电流I OFF。 实现上述优点，而不必使栅极绝缘体的厚度直到电荷转移隧道的区域必须减小或稳定性降低。

    Polyisocyanates blocked with sterically hindered phenols
    76.
    发明申请
    Polyisocyanates blocked with sterically hindered phenols 审中-公开
    多异氰酸酯用空间位阻酚封闭

    公开(公告)号：US20060116501A1

    公开(公告)日：2006-06-01

    申请号：US11235861

    申请日：2005-09-27

    申请人： Michael Mager ,  Joachim Simon ,  Frank Richter

    发明人： Michael Mager ,  Joachim Simon ,  Frank Richter

    IPC分类号： C08G18/00

    CPC分类号： C09D175/04 ,  C08G18/8067 ,  C08G2190/00 ,  C09J175/04

    摘要： The present invention relates to a process for preparing blocked polyisocyanates wherein at least 50 mole % of the NCO groups have been blocked with sterically hindered phenols by reacting a) one or more organic polyisocyanates with b) one or more sterically hindered phenols in the presence of c) at least one catalyst selected from i) heterocyclic amines in which at least one nitrogen atom is part of an aliphatic, olefinic or aromatic ring, ii) tetraorganoammonium and tetraorganophosphonium salts of weak acids (pka≧2.0), with nitrogen- and/or phosphorus-attached aliphatic, cycloaliphatic, araliphatic and/or aromatic radicals, and iii) zinc(II) compounds. The present invention also relates to the resulting blocked polyisocyanates and to their use for producing coatings, adhesives or sealants suitable for contact with foods and/or drinking water.

    摘要翻译： 本发明涉及一种制备封闭的多异氰酸酯的方法，其中至少50摩尔％的NCO基团已被空间位阻酚封闭，通过使a）一种或多种有机多异氰酸酯与b）一种或多种空间位阻酚在 c）至少一种催化剂，其选自i）杂环胺，其中至少一个氮原子是脂族，烯烃或芳族环的一部分，ii）弱酸的四有机铵盐和四有机鏻盐（pk = 2.0），与氮和/或磷连接的脂族，脂环族，芳脂族和/或芳族基团，和iii）锌（II）化合物。 本发明还涉及得到的封闭多异氰酸酯及其用于生产适合与食品和/或饮用水接触的涂料，粘合剂或密封剂的用途。

    Field effect transistor and method for production thereof
    77.
    发明申请
    Field effect transistor and method for production thereof 有权
    场效应晶体管及其制造方法

    公开(公告)号：US20050029583A1

    公开(公告)日：2005-02-10

    申请号：US10482331

    申请日：2002-06-25

    申请人： Martin Popp ,  Frank Richter ,  Dietmar Temmler ,  Andreas Wich-Glasen

    发明人： Martin Popp ,  Frank Richter ,  Dietmar Temmler ,  Andreas Wich-Glasen

    IPC分类号： H01L29/423 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L29/7854 ,  H01L29/66484 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/7851

    摘要： The invention relates to a field effect transistor in which the planar channel region on the upper surface of the elevation is extended in width by means of additional vertical channel regions on the lateral surfaces of the elevation. Said additional vertical channel regions connect directly to the planar channel region (vertical extended channel regions). Said field effect transistor has the advantage that a significant increase in the effective channel width for the current flow ION can be guaranteed relative to conventional transistor structures used up until the present, without having to accept a reduction in the achievable integration density. Said field effect transistor furthermore has a low reverse current IOFF. The above advantages are achieved without the thickness of the gate insulators up to the region of the charge transfer tunnels having to be reduced or a reduced stability.

    摘要翻译： 本发明涉及一种场效应晶体管，其中，通过在该高度的侧面上的另外的垂直沟道区，在该高度的上表面上的平面通道区域的宽度被延伸。 所述另外的垂直通道区域直接连接到平面通道区域（垂直扩展通道区域）。 所述场效应晶体管的优点在于，相对于直到现在使用的常规晶体管结构，可以保证电流ION的有效沟道宽度的显着增加，而不必接受可实现的积分密度的降低。 所述场效应晶体管还具有低反向电流IOFF。 实现上述优点，而不必使栅极绝缘体的厚度直到电荷转移隧道的区域必须减小或稳定性降低。

    Lateral jib locking device
    78.
    发明授权
    Lateral jib locking device 有权
    侧向起重臂锁定装置

    公开(公告)号：US06216895B1

    公开(公告)日：2001-04-17

    申请号：US09272178

    申请日：1999-03-18

    申请人： Gerd Erdmann ,  Frank Richter

    发明人： Gerd Erdmann ,  Frank Richter

    IPC分类号： B66C2304

    CPC分类号： B66C23/708

    摘要： A locking assembly for the telescopic jib of a crane, or mobile crane, includes a plurality of telescopic sections wherein locking pins are supported in an inner telescopic section and are biased outwardly by means of a spring for engagement within receiving apertures in an outer telescopic section surrounding the inner telescopic section. A release device is provided for engaging the inner end of a locking pin in order to release the locked position thereof against the spring biased. Preferably two locking pin are provided for each locking unit and are disposed on the inner telescopic section so that they will engage two oppositely located receiving apertures in the vertical side webs of the outer telescopic section. The engagement of the locking pins is located in the middle portion of the side webs where bending stresses are minimal, so that any weakening of the telescopic sections caused by the provision of the locking pin mounting structure and pin receiving portions will have negligible effect on the bending strength of the jib.

    摘要翻译： 用于起重机或移动式起重机的伸缩臂的锁定组件包括多个伸缩部分，其中锁定销支撑在内部伸缩部分中并且通过弹簧向外偏压，用于接合在外伸缩部分的接收孔内 围绕内伸缩部分。 提供释放装置用于接合锁定销的内端以便释放其抵抗弹簧偏置的锁定位置。 优选地，为每个锁定单元设置两个锁定销，并且设置在内部伸缩部分上，使得它们将接合位于外伸缩部分的垂直侧腹板中的两个相对定位的接收孔。 锁定销的接合位于侧腹板的中间部分，其中弯曲应力最小，使得由提供锁定销安装结构和销接收部分引起的伸缩部分的任何弱化将对 起重臂的弯曲强度。