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公开(公告)号：US08679943B2
公开(公告)日：2014-03-25
申请号：US13215738
申请日：2011-08-23
IPC分类号： H01L21/30
CPC分类号： H01L21/30 , H01L31/1892 , Y02E10/50
摘要： A spalling method is provided that includes depositing a stressor layer on surface of a base substrate, and contacting the stressor layer with a planar transfer. The planar transfer surface is then traversed along a plane that is parallel to and having a vertical offset from the upper surface of the base substrate. The planar transfer surface is traversed in a direction from a first edge of the base substrate to an opposing second edge of the base substrate to cleave the base substrate and transfer a spalled portion of the base substrate to the planar transfer surface. The vertical offset between the plane along which the planar transfer surface is traversed and the upper surface of the base substrate is a fixed distance. The fixed distance of the vertical offset provides a uniform spalling force. A spalling method is also provided that includes a transfer roller.
摘要翻译： 提供了一种剥落方法，其包括在基底表面上沉积应力层，并使应力层与平面转移接触。 然后，平面转移表面沿着平行于并且具有从基底基板的上表面垂直偏移的平面穿过。 平面转移表面在从基底基板的第一边缘到基底基板的相对的第二边缘的方向上穿过，以将基底基板切割并将基底基板的剥离部分转印到平面转印表面。 平面转移面沿着平面移动的平面与基底基板的上表面之间的垂直偏移是固定的距离。 垂直偏移的固定距离提供均匀的剥落力。 还提供了包括转印辊的剥落方法。
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72.发明申请公开(公告)号：US20140004651A1
公开(公告)日：2014-01-02
申请号：US13535812
申请日：2012-06-28
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1864 , Y02E10/548 , Y02P70/521
摘要： A method for forming a photovoltaic device includes depositing one or more layers of a photovoltaic stack on a substrate by employing a high deposition rate plasma enhanced chemical vapor deposition (HDR PECVD) process. Contacts are formed on the photovoltaic stack to provide a photovoltaic cell. Annealing is performed on the photovoltaic cell at a temperature and duration configured to improve overall performance.
摘要翻译： 一种用于形成光伏器件的方法包括通过采用高沉积速率等离子体增强化学气相沉积（HDR PECVD）工艺在衬底上沉积一层或多层光伏堆叠。 在光伏堆叠上形成触点以提供光伏电池。 在光伏电池上进行退火，温度和持续时间被配置为提高整体性能。
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73.发明申请公开(公告)号：US20140000692A1
公开(公告)日：2014-01-02
申请号：US13544439
申请日：2012-07-09
IPC分类号： H01L31/0236 , H01L31/0224
CPC分类号： H01L31/02363 , H01L31/022425 , H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/035281 , H01L31/105 , H01L31/1884 , Y02E10/50
摘要： A photovoltaic device includes a substrate layer having a plurality of three-dimensional structures formed therein providing a textured profile. A first electrode is formed over the substrate layer and extends over the three-dimensional structures including non-planar surfaces. The first electrode has a thickness configured to maintain the textured profile, and the first electrode includes a transparent conductive material having a dopant metal activated within the transparent conductive material. A continuous photovoltaic stack is conformally formed over the first electrode, and a second electrode is formed on the photovoltaic stack.
摘要翻译： 光伏器件包括其中形成有多个三维结构的衬底层，其提供纹理轮廓。 第一电极形成在衬底层之上，并且在包括非平面表面的三维结构上延伸。 第一电极具有被配置为保持纹理轮廓的厚度，并且第一电极包括在透明导电材料内激活的掺杂剂金属的透明导电材料。 在第一电极上保形地形成连续的光伏堆叠，并且在光伏堆叠上形成第二电极。
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公开(公告)号：US20130316542A1
公开(公告)日：2013-11-28
申请号：US13481062
申请日：2012-05-25
申请人： Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ibrahim Alhomoudi
发明人： Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ibrahim Alhomoudi
IPC分类号： H01L21/31
CPC分类号： H01L21/304 , B81C99/008 , H01L21/02002
摘要： A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface spanning across an entirety of the base substrate. At least one stressor layer portion having a shape is formed on at least a portion, but not all, of the uppermost surface of the base substrate. Spalling is performed which removes a material layer portion from the base substrate and provides a remaining base substrate portion. The material layer portion has the shape of the at least one stressor layer portion, while the remaining base substrate portion has at least one opening located therein which correlates to the shape of the at least one stressor layer.
摘要翻译： 利用位于基底的最上表面的一部分但不是全部的至少一个应力层部分剥离基底基板的局部区域的方法。 该方法包括提供具有均匀厚度的基底基底和横跨整个基底基底的平面最上表面。 至少一个具有形状的应力层部分形成在基底基板的最上表面的至少一部分但不是全部。 进行剥离，其从基底基板移除材料层部分并提供剩余的基底部分。 材料层部分具有至少一个应力层部分的形状，而剩余的基底部分具有位于其中的至少一个与至少一个应力层的形状相关的开口。
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公开(公告)号：US20130082357A1
公开(公告)日：2013-04-04
申请号：US13253059
申请日：2011-10-04
申请人： Ibrahim Alhomoudi , Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Davood Shahrjerdi
发明人： Ibrahim Alhomoudi , Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Davood Shahrjerdi
CPC分类号： H01L31/02363 , H01L31/028 , H01L31/0304 , H01L31/03682 , Y02E10/544 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A base layer of a semiconductor material is formed with a naturally textured surface. The base layer may be incorporated within a photovoltaic structure. A controlled spalling technique, in which substrate fracture is propagated in a selected direction to cause the formation of facets, is employed. Spalling in the [110] directions of a (001) silicon substrate results in the formation of such facets of the resulting base layer, providing a natural surface texture.
摘要翻译： 半导体材料的基层由天然纹理表面形成。 基底层可以结合在光伏结构内。 使用受控的剥落技术，其中衬底断裂沿所选方向传播以引起小平面的形成。 （001）硅衬底的[110]方向剥落导致所得到的基底层的这种面的形成，提供了自然的表面纹理。
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公开(公告)号：US20130052798A1
公开(公告)日：2013-02-28
申请号：US13215738
申请日：2011-08-23
IPC分类号： H01L21/30
CPC分类号： H01L21/30 , H01L31/1892 , Y02E10/50
摘要： A spalling method is provided that includes depositing a stressor layer on surface of a base substrate, and contacting the stressor layer with a planar transfer. The planar transfer surface is then traversed along a plane that is parallel to and having a vertical offset from the upper surface of the base substrate. The planar transfer surface is traversed in a direction from a first edge of the base substrate to an opposing second edge of the base substrate to cleave the base substrate and transfer a spalled portion of the base substrate to the planar transfer surface. The vertical offset between the plane along which the planar transfer surface is traversed and the upper surface of the base substrate is a fixed distance. The fixed distance of the vertical offset provides a uniform spalling force. A spalling method is also provided that includes a transfer roller.
摘要翻译： 提供了一种剥落方法，其包括在基底表面上沉积应力层，并使应力层与平面转移接触。 然后，平面转移表面沿着平行于并且具有从基底基板的上表面垂直偏移的平面穿过。 平面转移表面在从基底基板的第一边缘到基底基板的相对的第二边缘的方向上穿过，以将基底基板切割并将基底基板的剥离部分转印到平面转印表面。 平面转移面沿着平面移动的平面与基底基板的上表面之间的垂直偏移是固定的距离。 垂直偏移的固定距离提供均匀的剥落力。 还提供了包括转印辊的剥落方法。
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公开(公告)号：US20130025654A1
公开(公告)日：2013-01-31
申请号：US13193871
申请日：2011-07-29
申请人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoar-Tabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
发明人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoar-Tabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
CPC分类号： H01L31/1892 , H01L31/02167 , H01L31/0687 , H01L31/0725 , H01L31/0747 , H01L31/076 , H01L31/1808 , H01L31/1812 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A method of forming a photovoltaic device that includes bonding a substrate to a germanium-containing semiconductor layer with a stressor layer, wherein the stressor layer cleaves the germanium-containing semiconductor layer. At least one semiconductor layer is formed on a cleaved surface of the germanium-containing semiconductor layer that is opposite the conductivity type of the germanium-containing semiconductor layer to provide a first solar cell. The first solar cell absorbs a first range of wavelengths. At least one second solar cell may be formed on the first solar cell, wherein the at least one second solar cell is composed of at least one semiconductor material to absorb a second range of wavelengths that is different than the first range wavelengths absorbed by the first solar cell.
摘要翻译： 一种形成光伏器件的方法，该光电器件包括将衬底粘合到含锗半导体层与应力层，其中所述应力层切割含锗半导体层。 在与含锗半导体层的导电类型相反的含锗半导体层的切割表面上形成至少一个半导体层以提供第一太阳能电池。 第一太阳能电池吸收第一波长范围。 可以在第一太阳能电池上形成至少一个第二太阳能电池，其中至少一个第二太阳能电池由至少一个半导体材料组成，以吸收不同于由第一太阳能电池吸收的第一范围波长的第二波长范围 太阳能电池。
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公开(公告)号：US08227792B2
公开(公告)日：2012-07-24
申请号：US12031530
申请日：2008-02-14
申请人： Paul D. Agnello , Stephen W. Bedell , Robert H. Dennard , Anthony G. Domenicucci , Keith E. Fogel , Devendra K. Sadana
发明人： Paul D. Agnello , Stephen W. Bedell , Robert H. Dennard , Anthony G. Domenicucci , Keith E. Fogel , Devendra K. Sadana
IPC分类号： H01L31/00
CPC分类号： H01L21/324 , C30B25/02 , C30B29/52 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02664 , H01L21/7624 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L29/66893 , H01L29/78603
摘要： Thermal mixing methods of forming a substantially relaxed and low-defect SGOI substrate material are provided. The methods include a patterning step which is used to form a structure containing at least SiGe islands formed atop a Ge resistant diffusion barrier layer. Patterning of the SiGe layer into islands changes the local forces acting at each of the island edges in such a way so that the relaxation force is greater than the forces that oppose relaxation. The absence of restoring forces at the edges of the patterned layers allows the final SiGe film to relax further than it would if the film was continuous.
摘要翻译： 提供形成基本上松弛和低缺陷的SGOI基底材料的热混合方法。 所述方法包括图形化步骤，其用于形成至少包含形成在Ge抗蚀扩散阻挡层顶上的SiGe岛的结构。 将SiGe层图案化成岛以这样的方式改变作用在每个岛边缘处的局部力，使得松弛力大于抵抗放松的力。 在图案化层的边缘处没有恢复力允许最终的SiGe膜比如果膜是连续的那样进一步松弛。
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公开(公告)号：US20120060905A1
公开(公告)日：2012-03-15
申请号：US12879209
申请日：2010-09-10
CPC分类号： H01L31/035227 , H01L31/022425 , H01L31/02363 , H01L31/02366 , H01L31/0352 , H01L31/1804 , Y02E10/50
摘要： A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.
摘要翻译： 光电器件和方法包括在衬底层上沉积金属膜。 金属膜退火以在基底层上形成金属膜岛。 使用岛作为蚀刻掩模蚀刻衬底层，以在衬底层中形成柱。
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公开(公告)号：US20120031454A1
公开(公告)日：2012-02-09
申请号：US12852991
申请日：2010-08-09
IPC分类号： H01L31/042 , H01L31/18 , H01L31/04
CPC分类号： H01L31/0527 , H01L31/02366 , H01L31/03529 , H01L31/056 , Y02E10/52
摘要： A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.
摘要翻译： 光电器件和方法包括具有多个结构的衬底层，包括形成在其中的峰和谷。 连续的光伏堆叠保形地形成在衬底层上并且延伸超过峰和谷。 光伏堆叠具有小于1微米的厚度，并且被配置为将入射辐射转换成电流。
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