System and method for controlling composition for lithography process in real time using near infrared spectrometer
    71.
    发明授权
    System and method for controlling composition for lithography process in real time using near infrared spectrometer 失效
    使用近红外光谱仪实时控制光刻工艺的组成的系统和方法

    公开(公告)号:US07307259B2

    公开(公告)日:2007-12-11

    申请号:US11075806

    申请日:2005-03-10

    IPC分类号: G01J5/02

    摘要: A system and a method for controlling the multi-component composition such as photoresist, stripper, developer, etchant, thinner, rinser/cleaner and etch bead remover, for a lithography process, which is used for manufacturing a semiconductor device, a liquid crystal display device and so on, are disclosed. The system includes a composition circulator for withdrawing the composition from a storage tank retaining the composition for a lithography process, and for recycling the withdrawn composition to the storage tank, through a flow cell; a composition analyzer for measuring an absorbance of the composition passing through the flow cell, and for calculating the concentration of at least one component of the composition from the measured absorbance; a component supplier for supplying a deficient component to the storage tank when a concentration of the deficient component is below a predetermined level; and a controller for controlling the component supplier to adjust the concentration of each component of the composition according to the absorbance.

    摘要翻译: 用于制造半导体器件的光刻工艺的用于控制多组分组合物的系统和方法,例如光致抗蚀剂,剥离剂,显影剂,蚀刻剂,更薄的,清洗剂/清洁剂和蚀刻珠粒去除剂,液晶显示器 设备等,被公开。 该系统包括组合物循环器,用于从保留用于光刻工艺的组合物的储存容器中取出组合物,并通过流动池将抽出的组合物再循环到储罐; 用于测量通过流动池的组合物的吸光度并根据测量的吸光度计算组合物的至少一种组分的浓度的组成分析器; 当所述缺陷部件的浓度低于预定水平时,将供应不足的部件供应到所述储罐的部件供应器; 以及控制器,用于控制组件供应商根据吸光度调节组合物各组分的浓度。

    Method of controlling metallic layer etching process and regenerating etchant for metallic layer etching process based on near infrared spectrometer
    73.
    发明授权
    Method of controlling metallic layer etching process and regenerating etchant for metallic layer etching process based on near infrared spectrometer 失效
    基于近红外光谱仪控制金属层蚀刻工艺和金属层蚀刻工艺再生蚀刻剂的方法

    公开(公告)号:US07112795B2

    公开(公告)日:2006-09-26

    申请号:US10276703

    申请日:2001-03-27

    IPC分类号: G01J5/02

    摘要: In a method of controlling a metallic layer etching process for fabricating a semiconductor device or a liquid crystal display device, the composition of the etchant used in etching the metallic layer is first analyzed with the NIR spectrometer. The state of the etchant is then determined by comparing the analyzed composition with the reference composition. In case the life span of the etchant comes to an end, the etchant is replaced with a new etchant. By contrast, in case the life span of the etchant is left over, the etchant is delivered to the next metallic layer etching process. This analysis technique may be applied to the etchant regenerating process in a similar way.

    摘要翻译: 在控制用于制造半导体器件或液晶显示器件的金属层蚀刻工艺的方法中,首先用NIR光谱仪分析用于蚀刻金属层的蚀刻剂的组成。 然后通过将分析的组合物与参考组合物进行比较来确定蚀刻剂的状态。 如果蚀刻剂的使用寿命终止,蚀刻剂将被新的蚀刻剂所取代。 相比之下,在蚀刻剂的寿命被遗留的情况下,蚀刻剂被输送到下一个金属层蚀刻工艺。 该分析技术可以以类似的方式应用于蚀刻剂再生过程。

    Power semiconductor device for preventing punchthrough and manufacturing method thereof
    74.
    发明申请
    Power semiconductor device for preventing punchthrough and manufacturing method thereof 审中-公开
    用于防止穿孔的功率半导体器件及其制造方法

    公开(公告)号:US20060049465A1

    公开(公告)日:2006-03-09

    申请号:US11202176

    申请日:2005-08-12

    申请人: Jong-Min Kim

    发明人: Jong-Min Kim

    IPC分类号: H01L29/76

    摘要: This invention presents a power semiconductor for preventing punchthrough in the channel area. For this purpose, the invention presents a power semiconductor possessing a high concentration substrate area of conduction type 1; a primary epitaxial area of conduction type 1, formed in low concentration on top of the drain area; a secondary epitaxial area of conduction type 1, formed in medium concentration on top of the primary epitaxial area and with a doping profile that is actually uniform over the thickness; multiple secondary body areas of conduction type 2, formed within the secondary epitaxial area; and two source areas of conduction type 1, formed in high concentration along both edges of the body areas.

    摘要翻译: 本发明提出了一种用于防止通道区域穿透的功率半导体。 为此,本发明提供具有高浓度导电类型1的衬底面积的功率半导体; 导电类型1的主要外延区域,以低浓度形成在漏极区域的顶部; 导电类型1的二次外延区域,以介质浓度形成在初级外延区域的顶部上,并且具有在厚度上实际上均匀的掺杂分布; 形成在二次外延区域内的导电类型2的多个次体区域; 和两个导电类型1的源区域,沿着身体区域的两个边缘高浓度地形成。

    System and method for controlling composition for lithography process in real time using near infrared spectrometer
    75.
    发明申请
    System and method for controlling composition for lithography process in real time using near infrared spectrometer 失效
    使用近红外光谱仪实时控制光刻工艺的组成的系统和方法

    公开(公告)号:US20050202564A1

    公开(公告)日:2005-09-15

    申请号:US11075806

    申请日:2005-03-10

    摘要: A system and a method for controlling the multi-component composition such as photoresist, stripper, developer, etchant, thinner, rinser/cleaner and etch bead remover, for a lithography process, which is used for manufacturing a semiconductor device, a liquid crystal display device and so on, are disclosed. The system includes a composition circulator for withdrawing the composition from a storage tank retaining the composition for a lithography process, and for recycling the withdrawn composition to the storage tank, through a flow cell; a composition analyzer for measuring an absorbance of the composition passing through the flow cell, and for calculating the concentration of at least one component of the composition from the measured absorbance; a component supplier for supplying a deficient component to the storage tank when a concentration of the deficient component is below a predetermined level; and a controller for controlling the component supplier to adjust the concentration of each component of the composition according to the absorbance.

    摘要翻译: 用于制造半导体器件的光刻工艺的用于控制多组分组合物的系统和方法,例如光致抗蚀剂,剥离剂,显影剂,蚀刻剂,更薄的,清洗剂/清洁剂和蚀刻珠粒去除剂,液晶显示器 设备等,被公开。 该系统包括组合物循环器,用于从保留用于光刻工艺的组合物的储存容器中取出组合物,并通过流动池将抽出的组合物再循环到储罐; 用于测量通过流动池的组合物的吸光度并根据测量的吸光度计算组合物的至少一种组分的浓度的组成分析器; 当所述缺陷部件的浓度低于预定水平时,将供应不足的部件供应到所述储罐的部件供应器; 以及控制器,用于控制组件供应商根据吸光度调节组合物各组分的浓度。

    Field emission backlight device
    76.
    发明申请
    Field emission backlight device 审中-公开
    场致发射背光装置

    公开(公告)号:US20050174040A1

    公开(公告)日:2005-08-11

    申请号:US11046713

    申请日:2005-02-01

    摘要: A field emission backlight device includes: a front substrate and a rear substrate arranged in parallel and spaced apart from each other by a predetermined distance; an anode and a cathode arranged opposite to each other on a respective inner surfaces of the front and rear substrates; a fluorescent layer arranged on the anode and having a predetermined thickness; a convex portion including a plurality of convex projections arranged on an outer surface of the front substrate opposite to the anode; and electron emitters arranged on the cathode to emit electrons in response to an applied field.

    摘要翻译: 场致发射背光装置包括:前基板和后基板,其平行布置并彼此隔开预定距离; 在前基板和后基板的相应内表面上彼此相对布置的阳极和阴极; 布置在阳极上并具有预定厚度的荧光层; 凸部,其包括布置在与所述阳极相对的所述前基板的外表面上的多个凸起突起; 以及布置在阴极上以响应于施加场发射电子的电子发射器。

    Field emission display device having carbon-based emitter
    77.
    发明授权
    Field emission display device having carbon-based emitter 失效
    具有碳基发射体的场发射显示装置

    公开(公告)号:US06621232B2

    公开(公告)日:2003-09-16

    申请号:US10155732

    申请日:2002-05-28

    IPC分类号: G09G310

    摘要: A field emission display includes a first substrate; a plurality of gate electrodes formed on the first substrate in a predetermined pattern; an insulation layer formed covering the gate electrodes over an entire surface of the first substrate; a plurality of cathode electrodes formed on the insulation layer in a predetermined pattern, a plurality of emitters formed on the cathode electrodes; a plurality of counter electrodes formed on the insulation layer at a predetermined distance from the emitters and in a state of electrical connection to the gate electrodes, the counter electrodes forming an electric field directed toward the emitters; a second substrate provided at a predetermined distance from the first substrate and sealed in a vacuum state with the first substrate; an anode electrode formed on a surface of the second substrate opposing the first substrate; and a plurality of phosphor layers formed over the anode electrode in a predetermined pattern.

    摘要翻译: 场发射显示器包括第一衬底; 以预定图案形成在所述第一基板上的多个栅电极; 形成在所述第一基板的整个表面上覆盖所述栅电极的绝缘层; 以预定图案形成在所述绝缘层上的多个阴极电极,形成在所述阴极电极上的多个发射体; 多个对置电极,形成在距发射体预定距离的绝缘层上,并且与电极电连接的状态,对置电极形成朝向发射体的电场; 第二基板,设置在与所述第一基板隔开预定距离并与所述第一基板以真空状态密封; 形成在与第一基板相对的第二基板的表面上的阳极电极; 以及以预定图案形成在阳极电极上的多个荧光体层。