PHOTOCATHODE INCLUDING SILICON SUBSTRATE WITH BORON LAYER

    公开(公告)号:US20190066962A1

    公开(公告)日:2019-02-28

    申请号:US16177144

    申请日:2018-10-31

    Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

    Electron Source
    74.
    发明申请
    Electron Source 审中-公开

    公开(公告)号:US20190049851A1

    公开(公告)日:2019-02-14

    申请号:US16161010

    申请日:2018-10-15

    Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

    Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms

    公开(公告)号:US10044164B2

    公开(公告)日:2018-08-07

    申请号:US15239268

    申请日:2016-08-17

    Abstract: A repetition rate (pulse) multiplier includes one or more beam splitters and prisms forming one or more ring cavities with different optical path lengths that delay parts of the energy of each pulse. A series of input laser pulses circulate in the ring cavities and part of the energy of each pulse leaves the system after traversing the shorter cavity path, while another part of the energy leaves the system after traversing the longer cavity path, and/or a combination of both cavity paths. By proper choice of the ring cavity optical path length, the repetition rate of an output series of laser pulses can be made to be a multiple of the input repetition rate. The relative energies of the output pulses can be controlled by choosing the transmission and reflection coefficients of the beam splitters. Some embodiments generate a time-averaged output beam profile that is substantially flat in one dimension.

    Sensor With Electrically Controllable Aperture For Inspection And Metrology Systems

    公开(公告)号:US20180070040A1

    公开(公告)日:2018-03-08

    申请号:US15806913

    申请日:2017-11-08

    CPC classification number: H04N5/3722 G01N21/956 G01N2201/12

    Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

    CW DUV Laser With Improved Stability
    79.
    发明申请
    CW DUV Laser With Improved Stability 审中-公开
    CW DUV激光器具有改进的稳定性

    公开(公告)号:US20170070025A1

    公开(公告)日:2017-03-09

    申请号:US15335266

    申请日:2016-10-26

    Abstract: A deep ultra-violet (DUV) continuous wave (CW) laser includes a fundamental CW laser configured to generate a fundamental frequency with a corresponding wavelength between about 1 μm and 1.1 μm, a third harmonic generator module including one or more non-linear optical (NLO) crystals that generate a third harmonic and an optional second harmonic, and a fifth harmonic generator. The fifth harmonic generator module includes a cavity resonant at the fundamental frequency, and combines the fundamental frequency with the third harmonic in a first NLO crystal to generate a fourth harmonic, then combines the fourth harmonic with unconsumed fundamental frequency in a second NLO crystal to generate the fifth harmonic. One or more lenses are used to focus the third and fourth harmonics in the first and second NLO crystals, respectively.

    Abstract translation: 深紫外(DUV)连续波(CW)激光器包括配置为产生具有约1μm和1.1μm之间的对应波长的基频的基本CW激光器,包括一个或多个非线性光学器件的三次谐波发生器模块 (NLO)晶体,其产生三次谐波和可选的二次谐波,以及五次谐波发生器。 第五谐波发生器模块包括在基频处谐振的腔,并且在第一NLO晶体中组合基频和三次谐波以产生第四谐波,然后在第二NLO晶体中组合第四谐波与未消耗的基频,以产生 五次谐波。 使用一个或多个透镜来分别在第一和第二NLO晶体中聚焦第三和第四谐波。

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