公开(公告)号：US08795467B2

公开(公告)日：2014-08-05

申请号：US12575514

申请日：2009-10-08

申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.

摘要翻译： 等离子体处理装置包括设置在处理室的下部的样品台，由构成真空容器的上部的绝缘材料制成的钟罩，设置在电筒的外部和周围的线圈天线 被提供以在钟罩内部的等离子体产生空间中产生等离子体，以及安装在钟罩上并设置在钟罩的外表面和线圈天线之间的法拉第屏蔽。 由导电材料制成的环形构件设置在位于钟罩的裙部下方的处理室的环形部分的内表面的内侧，并构成处理室的一部分。 环形构件向上延伸以覆盖钟罩的内表面的一部分。

公开(公告)号：US08282848B2

公开(公告)日：2012-10-09

申请号：US12073048

申请日：2008-02-28

申请人： Yutaka Ohmoto ,  Mamoru Yakushiji ,  Yutaka Kouzuma ,  Ken Yoshioka ,  Tsunehiko Tsubone

发明人： Yutaka Ohmoto ,  Mamoru Yakushiji ,  Yutaka Kouzuma ,  Ken Yoshioka ,  Tsunehiko Tsubone

IPC分类号： G01L21/30 ,  G01R31/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67109 ,  H01J2237/2001 ,  H01L21/67248

摘要： A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.

摘要翻译： 一种等离子体处理装置，包括：由绝缘材料制成的薄膜，构成放置样品的样品台的表面; 其上表面与膜接合在膜的下部并由导热构件制成的盘状构件; 加热器布置在膜中并且布置在膜的中心部分和其外周侧的区域中; 布置在盘状构件中并且用于冷却盘形构件的冷却剂流过的冷却剂通道; 多个电源，其各自调整对所述多个区域中的每个所述加热器的电力; 以及控制器，其通过使用通过假设盘状构件的上表面的温度获得的结果来调整来自多个电源的输出。

公开(公告)号：US08252132B2

公开(公告)日：2012-08-28

申请号：US12686759

申请日：2010-01-13

申请人： Ken Yoshioka ,  Syuichi Takahashi ,  Yasuharu Sasaki

发明人： Ken Yoshioka ,  Syuichi Takahashi ,  Yasuharu Sasaki

IPC分类号： B32B37/00

CPC分类号： H01L21/6831 ,  H01L21/67132 ,  Y10T29/49746 ,  Y10T428/219 ,  Y10T428/24777 ,  Y10T428/24843 ,  Y10T428/249982 ,  Y10T428/249985

摘要： In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer.

摘要翻译： 在金属基体上至少设有粘合剂层和吸附层的静电卡盘装置的修理方法中，用线状粘合剂卷绕被侵蚀的粘合剂层的侧面，此后进行热压缩。 用于修复方法的静电卡盘装置的修理装置包括用于旋转静电卡盘装置的旋转工作台和用于将粘合剂供给到粘合剂层的筒管。

公开(公告)号：US08062473B2

公开(公告)日：2011-11-22

申请号：US12324125

申请日：2008-11-26

申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween.

摘要翻译： 等离子体处理装置包括处理室，样品台，钟罩，线圈天线，法拉第屏蔽和位于钟罩的裙部下方并位于样品台上方的气环构件。 气环构件从设置在气环构件的内表面上的气体端口向钟罩内的等离子体产生空间提供处理气体。 环形板设置在法拉第罩的周边附近，并且具有面向气体环构件的内表面的内表面并且与气环构件的内表面间隔开，以限定其间的间隙。

公开(公告)号：US20090321017A1

公开(公告)日：2009-12-31

申请号：US12206021

申请日：2008-09-08

申请人： Tsunehiko Tsubone ,  Hiroho Kitada ,  Yosuke Sakai ,  Ken Yoshioka ,  Yutaka Omoto ,  Mamoru Yakushiji ,  Yutaka Kouzuma

发明人： Tsunehiko Tsubone ,  Hiroho Kitada ,  Yosuke Sakai ,  Ken Yoshioka ,  Yutaka Omoto ,  Mamoru Yakushiji ,  Yutaka Kouzuma

IPC分类号： C23F1/00

CPC分类号： H01L21/67109 ,  H01J2237/2001 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/6831

摘要： There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers.

摘要翻译： 公开了一种等离子体处理装置，其中放置在位于真空容器中的处理室内的样品台的顶表面上的样品用处理室中形成的等离子体进行处理，其包括在样品台内切割的一组导管 哪个冷却介质流动？ 其加热元件同心地嵌入在作为样品台的顶表面的电介质膜中的膜状加热器; 多个温度控制器分别设置以不同的值流过管道的冷却介质的温度; 以及控制单元，其通过从多个温度控制器供给的冷却介质的管道切换循环。

公开(公告)号：US20080011716A1

公开(公告)日：2008-01-17

申请号：US11778780

申请日：2007-07-17

申请人： Ryoji NISHIO ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji NISHIO ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： C23F1/00

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A constant of the resonance circuit is changed based on the result of comparison by the comparison circuit.

摘要翻译： 一种等离子体处理装置的等离子体处理方法，包括气体环，钟罩，天线，样品台，法拉第屏蔽和用于向天线和法拉第屏蔽提供电源电压的RF电源电路 。 RF电源电路包括RF电源，与RF电源连接的天线，与天线串联连接并提供谐振电压的谐振电路，用于检测谐振电路的谐振电压的检测电路，以及 比较器电路，用于将由检测电路检测的谐振电压与预定设定值进行比较。 谐振电路的常数根据比较电路的比较结果而改变。

公开(公告)号：US20060171093A1

公开(公告)日：2006-08-03

申请号：US11069551

申请日：2005-03-02

申请人： Hiroaki Ishimura ,  Ken Yoshioka ,  Takahiro Abe ,  Go Saito ,  Motohiko Yoshigai

发明人： Hiroaki Ishimura ,  Ken Yoshioka ,  Takahiro Abe ,  Go Saito ,  Motohiko Yoshigai

IPC分类号： H01H1/00

CPC分类号： H01J37/32706 ,  H01J37/321 ,  H01L21/6833

摘要： In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.

摘要翻译： 在使用静电卡盘的等离子体处理装置中，防止等离子体电位的增加，避免异常放电。 等离子体处理装置包括用于在真空容器中产生等离子体的RF源，用于向样品施加RF偏置功率的另一RF源，具有静电卡盘电极的样品台，用于向静电卡盘电压施加静电卡盘电压的DC电源 电极，以及控制器，用于将静电卡盘电压转换为负值，以抑制RF偏置功率的峰 - 峰电压的四分之一到一半的电位差，以抑制等离子体电位的增加。

公开(公告)号：US20050175850A1

公开(公告)日：2005-08-11

申请号：US10513726

申请日：2003-11-18

申请人： Ichirou Koyano ,  Akihiro Maeda ,  Yuusuke Suzuki ,  Ken Yoshioka

发明人： Ichirou Koyano ,  Akihiro Maeda ,  Yuusuke Suzuki ,  Ken Yoshioka

IPC分类号： B32B15/08 ,  C08G73/06 ,  H05K1/00 ,  H05K1/03 ,  H05K1/05 ,  B32B27/42

CPC分类号： C08G73/0627 ,  B32B15/08 ,  H05K1/036 ,  H05K1/0393 ,  H05K1/056 ,  H05K2201/0129 ,  H05K2201/0154 ,  Y10T428/31681 ,  Y10T428/31688

摘要： An object of the present invention is to provide a flexible metallic layered product preferably used for a flexible printed board for flip chip bonding, which is required to have high heat resistance and pressure resistance by improving heat resistance of the flexible metallic layered product, in particular, improving heat resistance of the layer contacting the metallic layer, and a heat resistant adhesive composition. In order to achieve the object, the present invention provides a flexible metallic layered product comprising at least a three-dimensional cross-linking type thermosetting resin layer and a thermoplastic resin layer are layered on a metallic layer in this order. In particular, when a ratio (t1/t2) between the thickness (t1) of the three-dimensional cross-linking type thermosetting resin layer and the thickness (t2) of the total resin layers, which are layered on the metallic layer, is in a range from 7/100 to 85/100, heat resistance of the total resin layers, which are layered on the metallic layer, is more improved.

摘要翻译： 本发明的目的是提供一种柔性金属层叠体，优选用于通过改善柔性金属层压体的耐热性而需要具有高耐热性和耐压性的柔性印刷电路板的倒装芯片接合 提高与金属层接触的层的耐热性，以及耐热粘合剂组合物。 为了达到上述目的，本发明提供一种挠性金属层叠体，其至少包含三维交联型热固性树脂层和热塑性树脂层，依次层叠在金属层上。 特别是当三维交联型热固性树脂层的厚度（t1）与层叠在金属层上的总树脂层的厚度（t2）之间的比率（t1 / t2）为 在7/100至85/100的范围内，层叠在金属层上的总树脂层的耐热性进一步提高。

公开(公告)号：US20050089625A1

公开(公告)日：2005-04-28

申请号：US10997888

申请日：2004-11-29

申请人： Seiichiro Kanno ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Hideki Kihara ,  Hideyuki Yamamoto

发明人： Seiichiro Kanno ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Hideki Kihara ,  Hideyuki Yamamoto

IPC分类号： H01L21/00 ,  B05D1/00 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/67253 ,  H01J37/32082 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67248

摘要： A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.

摘要翻译： 一种用于操作半导体处理装置的方法，其使用其中产生的等离子体等离子体处理安装在放置在容器中的台上的半导体晶片。 该方法包括设置半导体晶片的温度，并且基于关于设置的半导体晶片的温度的信息来控制半导体处理装置的操作。

公开(公告)号：US06752580B2

公开(公告)日：2004-06-22

申请号：US09956140

申请日：2001-09-20

申请人： Minoru Soraoka ,  Ken Yoshioka ,  Yoshinao Kawasaki

发明人： Minoru Soraoka ,  Ken Yoshioka ,  Yoshinao Kawasaki

IPC分类号： B65G1133

CPC分类号： H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67727 ,  H01L21/67778 ,  Y10S134/902 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14 ,  Y10T70/5801 ,  Y10T70/5805

摘要： A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

摘要翻译： 真空处理装置由盒式磁带和真空处理块构成。 盒式磁带具有用于安装包含样品和大气传送装置的多个盒的盒式台。 真空处理块具有用于对样品进行真空处理的多个处理室和用于转移样品的真空转印装置。 磁带盒和真空处理块的平面图都是近似矩形的，并且盒体的宽度被设计成大于真空处理块的宽度，真空处理装置的平面图形成为 L形或T形。