公开(公告)号：US07577242B2

公开(公告)日：2009-08-18

申请号：US10541968

申请日：2003-12-23

申请人： Jiashun Tu ,  Lingjiang Mu ,  Ming Li

发明人： Jiashun Tu ,  Lingjiang Mu ,  Ming Li

IPC分类号： H04M1/56

CPC分类号： H04M3/36

摘要： The method of controlling the user calling load in Soft Switch system in present invention comprises the steps of: basic calling module receives the congestion direction message; judge whether the system congestion indicated by said congestion direction message is sporadic or sustaining; control the switching of user calling load according to the judgment whether the system congestion indicated by said congestion direction message is sporadic or sustaining. The aggressive effectiveness brought by present invention are: the system has the higher stability and reliability; when the traffic overload state occurs, the setup of maximum calling number can be guaranteed and the system can also restore to the normal load state. Soft module doesn't influence the setup of normal calling, nor does the setup of urgency special service calling; the system possesses good adaptability, the controlling of load is efficient and stable, and has the self-adapting overload controlling capability.

摘要翻译： 本发明在软交换系统中控制用户呼叫负载的方法包括以下步骤：基本呼叫模块接收拥塞方向消息; 判断由所述拥塞方向消息指示的系统拥塞是否是零星或持续的; 根据判断所述拥塞方向消息所指示的系统拥塞是否零散或持续，来控制用户呼叫负载的切换。 本发明带来的积极效果是：系统具有较高的稳定性和可靠性; 当发生流量过载状态时，可以保证设置最大主叫号码，系统也可以恢复到正常的负载状态。 软模块不影响正常呼叫的设置，也不设置紧急特殊业务呼叫; 系统具有良好的适应性，负载控制高效稳定，具有自适应过载控制能力。

公开(公告)号：US20090195134A1

公开(公告)日：2009-08-06

申请号：US12329959

申请日：2008-12-08

申请人： Zhenjiang Liu ,  Wenjie Pan ,  Ming Li ,  Feng Zhang ,  Fei Li ,  Zhiqing Shen

发明人： Zhenjiang Liu ,  Wenjie Pan ,  Ming Li ,  Feng Zhang ,  Fei Li ,  Zhiqing Shen

IPC分类号： A47B95/02

CPC分类号： E05B65/46 ,  E05C3/14

摘要： A mechanism for releasably locking a drawer and preventing the drawer from inadvertently slipping out of its recess includes a user-accessible bar that actuates locking hooks to release the drawer from a locked position.

摘要翻译： 用于可释放地锁定抽屉并防止抽屉不经意地从其凹部滑出的机构包括用户可接近的杆，其致动锁定钩以将抽屉从锁定位置释放。

公开(公告)号：US20080306808A1

公开(公告)日：2008-12-11

申请号：US11811175

申请日：2007-06-08

申请人： Iqbal Adjali ,  Malcolm Benjamin Dias ,  Wael El-Deredy ,  Carmen Maria Sordo-Garcia ,  Ming Li ,  Paulo Jorge Gomes Lisboa

发明人： Iqbal Adjali ,  Malcolm Benjamin Dias ,  Wael El-Deredy ,  Carmen Maria Sordo-Garcia ,  Ming Li ,  Paulo Jorge Gomes Lisboa

IPC分类号： G06Q30/00

CPC分类号： G06Q30/02 ,  G06Q10/06375 ,  G06Q10/06395 ,  G06Q30/0203 ,  G06Q30/0204

摘要： In an automated method for providing personalised recommendations to a user, a global probabilistic purchase model based on prior interactions of a group of users of a system, is used in the generation of personalised recommendations for future purchases for a given user. Attributes of the given user are used to identify characteristics relating to the user's personal purchasing, correction factors are calculated to update the output of the global probabilistic purchase model to personalise the recommendations for the user.

摘要翻译： 在用于向用户提供个性化建议的自动化方法中，基于系统的一组用户的先前交互的全局概率购买模型被用于为给定用户的将来购买生成个性化推荐。 给定用户的属性用于识别与用户个人购买相关的特征，计算校正因子以更新全局概率购买模型的输出以个性化用户的建议。

公开(公告)号：US20080305629A1

公开(公告)日：2008-12-11

申请号：US12195263

申请日：2008-08-20

申请人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

发明人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

IPC分类号： H01L21/4763

CPC分类号： C23C16/45527 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28061 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L27/10861 ,  H01L28/60 ,  H01L29/4941 ,  H01L29/66181

摘要： In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

摘要翻译： 在一个实施例中，提供了一种在衬底上形成钨阻挡材料的方法，其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体（例如乙硼烷或硅烷）来沉积钨层。 钨层的厚度可以为约或者更小，并且氮化钨层的电阻率可以为约380μΩ·cm以下。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。

公开(公告)号：US20080150123A1

公开(公告)日：2008-06-26

申请号：US12044828

申请日：2008-03-07

申请人： Ming Li ,  Sayeh Khalili ,  Donald R. Mullen

发明人： Ming Li ,  Sayeh Khalili ,  Donald R. Mullen

IPC分类号： H01L23/12

CPC分类号： H01L23/4985 ,  H01L23/49833 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2223/6688 ,  H01L2224/04042 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599

摘要： The semiconductor package includes a rigid circuit board substrate having a substrate first side and an opposing substrate second side. The package also includes multiple electrical contacts coupled to the substrate at the substrate first side. An adhesive directly contacts the substrate second side. A semiconductor device directly contacts the adhesive. At least one flexible conductor is electrically connected to the semiconductor device and to at least one of the electrical contacts. The flexible conductor extends from the first side to the second side of the substrate.

摘要翻译： 半导体封装包括具有衬底第一侧和相对衬底第二侧的刚性电路板衬底。 封装还包括在衬底第一侧耦合到衬底的多个电触点。 粘合剂直接接触基板第二面。 半导体器件直接接触粘合剂。 至少一个柔性导体电连接到半导体器件和至少一个电触头。 柔性导体从衬底的第一侧延伸到第二侧。

公开(公告)号：US07376307B2

公开(公告)日：2008-05-20

申请号：US10976524

申请日：2004-10-29

申请人： Rajminder Singh ,  Ming Li ,  Jimmy Yi-Jie Jia ,  Xinbing Liu ,  Tetsuo Ohara

发明人： Rajminder Singh ,  Ming Li ,  Jimmy Yi-Jie Jia ,  Xinbing Liu ,  Tetsuo Ohara

IPC分类号： G02B6/34

CPC分类号： G02B6/02095 ,  G02B6/02085 ,  G02B6/02147 ,  G02B2006/0209 ,  H01S5/12 ,  H01S5/141 ,  H01S5/4068

摘要： A multimode long period fiber Bragg grating (LPFBG) for a predetermined wavelength band. The LPFBG formed of a non-photosensitive material having an initial index of refraction. The multimode optical fiber core includes a substantially cylindrical surface, a longitudinal core axis, a core radius, and a number of index-altered portions having an altered index of refraction different from the initial cladding index of refraction. Each of the index-altered multimode optical fiber core has a first transmission surface and second transmission surface that is substantially parallel to the first transmission surface. Also, these index-altered portions are arranged within the non-photosensitive material of the multimode optical fiber core such that the first transmission surface of one portion of the plurality of index-altered portions is substantially parallel to the second transmission surface of a neighboring portion to form a long period Bragg grating structure.

摘要翻译： 用于预定波长带的多模长周期光纤布拉格光栅（LPFBG）。 LPFBG由具有初始折射率折射率的非感光材料形成。 多模光纤芯包括具有与初始包层折射率不同的改变的折射率的基本圆柱形表面，纵向芯轴，芯半径和多个折射率改变部分。 每个索引改变的多模光纤芯具有基本上平行于第一传输表面的第一传输表面和第二传输表面。 此外，这些折射率改变部分布置在多模光纤芯的非感光材料内，使得多个折射率改变部分中的一部分的第一透射表面基本上平行于相邻部分的第二透射表面 形成长周期布拉格光栅结构。

公开(公告)号：US20080078742A1

公开(公告)日：2008-04-03

申请号：US11618728

申请日：2006-12-29

申请人： Jianqiang HU ,  Zhixian Rui ,  Yanli Zhao ,  Yanjun Wang ,  Ming Li ,  Min Pan

发明人： Jianqiang HU ,  Zhixian Rui ,  Yanli Zhao ,  Yanjun Wang ,  Ming Li ,  Min Pan

IPC分类号： C03C15/00 ,  C23F1/00

CPC分类号： G01N1/32

摘要： A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.

摘要翻译： 一种制备TEM样品的方法，包括以下步骤：提供具有两个凹坑的样品和两个凹坑之间的失效区域，所述失效区域包括半导体器件; 铣削故障区域的第一表面，直到半导体器件的横截面露出; 蚀刻失效区域的第一表面; 清洗样品; 铣削失效区域的第二表面，直到失效区域可以通过电子束。 可以通过上述步骤制备用于高分辨率TEM的样品。 当观察样品时，很容易区分轻掺杂漏极，源极/漏极区域与硅衬底，并清楚地观察到轻掺杂漏极，源极/漏极区域中的图案和缺陷; 此外，在故障区域中容易区分BPSG和非掺杂二氧化硅。

公开(公告)号：US20080041209A1

公开(公告)日：2008-02-21

申请号：US11893484

申请日：2007-08-16

申请人： Ming Li

发明人： Ming Li

IPC分类号： B26D1/14

CPC分类号： B23D59/002 ,  Y10T83/7697

摘要： The present invention provides a power saw, which comprises a base, a support arm mounted on the base, a cutting unit supported by the support arm and pivotable about a first axis to a first angle position, and a table disposed on the base for supporting a workpiece to be cut. The cutting unit comprises a cutting head which contains a cutting element, a gear box, and a motor. The gear box is positioned between and connects the cutting head and the motor. The power saw further comprises an angle indication device which comprises a first angle indication light, a control device connected to the first angle indication light, and a power source supplying power to the first angle indication light. The first angle indication light, the control device and the power source are electrically connected when the cutting unit is at the first angle position.

摘要翻译： 本发明提供一种动力锯，其包括基座，安装在基座上的支撑臂，由支撑臂支撑并可围绕第一轴线枢转到第一角度位置的切割单元，以及设置在基座上用于支撑的台子 要切割的工件。 切割单元包括切割头，其包含切割元件，齿轮箱和马达。 齿轮箱位于切割头和电机之间并连接。 动力锯进一步包括角度指示装置，其包括第一角度指示灯，连接到第一角度指示灯的控制装置和向第一角度指示灯供电的电源。 当切割单元处于第一角度位置时，第一角度指示灯，控制装置和电源电连接。

公开(公告)号：US07280720B2

公开(公告)日：2007-10-09

申请号：US11198721

申请日：2005-08-05

申请人： Giovanni Barbarossa ,  Ming Li ,  Song Peng

发明人： Giovanni Barbarossa ,  Ming Li ,  Song Peng

IPC分类号： G02B6/28 ,  H04J14/02

CPC分类号： G02B6/29382 ,  G02B6/272 ,  G02B6/2766 ,  G02B6/29361 ,  G02B6/29362 ,  G02B6/29395 ,  G02F1/313 ,  G02F2202/40 ,  G02F2203/05

摘要： A tunable optical filter comprises an optical switch having a single first optical port and a plurality of second optical ports; a plurality of band pass filters, each one of the band pass filters optically coupled to a respective second optical port; and an optical multiplexer having a plurality of inputs and a single output, each input optically coupled to a respective band pass filter, wherein the optical switch delivers a plurality of optical channels to a selected one of the band pass filters, the selected band pass filter transmitting a single selected optical channel to an input of the optical multiplexer. Alternatively, the multiplexer may be substituted by a second optical switch. Optionally, the band pass filters may reflect other channels back to the plurality of second optical ports.

摘要翻译： 可调光滤波器包括具有单个第一光端口和多个第二光端口的光开关; 多个带通滤波器，每个带通滤波器光耦合到相应的第二光端口; 以及具有多个输入和单个输出的光学多路复用器，每个输入光学耦合到相应的带通滤波器，其中所述光学开关将多个光学信道传送到所选择的带通滤波器中的一个，所选择的带通滤波器 将单个选择的光信道发送到光复用器的输入。 或者，多路复用器可以由第二光学开关代替。 可选地，带通滤波器可以将其它信道反射回多个第二光端口。

公开(公告)号：US07274051B2

公开(公告)日：2007-09-25

申请号：US11074900

申请日：2005-03-09

申请人： Sungmin Kim ,  Ming Li ,  Eungjung Yoon

发明人： Sungmin Kim ,  Ming Li ,  Eungjung Yoon

IPC分类号： H01L29/76

CPC分类号： H01L29/42392 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/7854 ,  H01L29/78654 ,  H01L29/78696

摘要： In a field effect transistor (FET), and a method of fabricating the same, the FET includes a semiconductor substrate, source and drain regions formed on the semiconductor substrate, a plurality of wire channels electrically connecting the source and drain regions, the plurality of wire channels being arranged in two columns and at least two rows, and a gate dielectric layer surrounding each of the plurality of wire channels and a gate electrode surrounding the gate dielectric layer and each of the plurality of wire channels.

摘要翻译： 在场效应晶体管（FET）及其制造方法中，FET包括半导体基板，在半导体基板上形成的源极和漏极区域，多个电连接源极和漏极区域的导线沟道，多个 线通道布置成两列并且至少两行，以及围绕多个线通道中的每一个的栅极电介质层和围绕栅介质层和多个有线通道中的每一个的栅电极。