Wood Powder-Containing Resin Molded Product and Method for Producing the Same
    72.
    发明申请
    Wood Powder-Containing Resin Molded Product and Method for Producing the Same 有权
    含木粉的树脂成型体及其制造方法

    公开(公告)号:US20120094109A1

    公开(公告)日:2012-04-19

    申请号:US13381362

    申请日:2010-06-07

    申请人: Michio Komatsu

    发明人: Michio Komatsu

    IPC分类号: B32B3/26 B29C44/12

    摘要: A wood powder-containing resin molded article which can be reduced in weight by reducing an amount of thermoplastic resin, and also has excellent mechanical strength, and a method for producing the same are provided. A wood powder-containing resin molded article 1 is made of a thermoplastic resin containing wood powder, and includes a non-foamed layer 2 formed on a surface and a foamed layer 3 formed in an inner portion. The foamed layer 3 includes, in order from a side close to the surface, a first foamed layer 3a, a second foamed layer 3b having cells with a smaller average pore size than those of the first foamed layer 3a, and a third foamed layer 3c having cells with a larger average pore size than those of the first foamed layer 3a. The wood powder-containing resin molded article 1 contains a perfuming component.

    摘要翻译: 提供一种含木粉的树脂成型体,其通过减少热塑性树脂的量可以减少重量,并且还具有优异的机械强度及其制造方法。 含有木粉的树脂成型体1由含有木粉的热塑性树脂制成,并且包括在表面上形成的非发泡层2和形成在内部的发泡层3。 发泡层3从靠近表面的一侧依次包括具有比第一发泡层3a小的平均孔径的第一发泡层3a和第二发泡层3b,以及第三发泡层3c 具有比第一发泡层3a大的平均孔径的细胞。 含有木粉的树脂成型品1含有加香成分。

    Coating liquid for formation of protective film for semiconductor processing and method for preparation of the same
    74.
    发明授权
    Coating liquid for formation of protective film for semiconductor processing and method for preparation of the same 有权
    用于形成半导体加工用保护膜的涂布液及其制备方法

    公开(公告)号:US07998567B2

    公开(公告)日:2011-08-16

    申请号:US11665747

    申请日:2005-10-11

    IPC分类号: B32B3/26

    摘要: Disclosed is a coating liquid for forming a protective film having high film strength and a low specific dielectric constant for semiconductor processing, and a method for preparing the coating liquid. The coating liquid is a liquid composition comprising (a) silicon compound obtained by hydrolyzing tetraalkyl orthosilicate (TAOS) and alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, or a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl orthosilicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, mixing the hydrolyzed or partially hydrolyzed product with alkoxysilane (AS) or a hydrolyzed or partially hydrolyzed product thereof, and hydrolyzing all or a portion of the mixture, (b) an organic solvent, and (c) water. The coating liquid is characterized in that a quantity of water contained in the liquid composition is in the range from 35 to 65% by weight.

    摘要翻译: 公开了一种用于形成用于半导体加工的具有高膜强度和低比介电常数的保护膜的涂布液,以及一种制备涂布液的方法。 涂布液是一种液体组合物,其包含(a)在四烷基氢氧化铵(TAAOH)和水的存在下水解四烷基原硅酸酯(TAOS)和烷氧基硅烷(AS)而获得的硅化合物,或通过水解或部分水解四烷基 在四烷基氢氧化铵(TAAOH)和水的存在下,将水解或部分水解的产物与烷氧基硅烷(AS)或其水解或部分水解产物混合,并水解所有或部分混合物,(b) )有机溶剂,和(c)水。 涂布液的特征在于,液体组合物中含有的水的量在35至65重量%的范围内。

    Coating liquid for formation of protective film for semiconductor processing, method for preparation of the same, and protective film for semiconductor processing made from the coating liquid
    75.
    发明申请
    Coating liquid for formation of protective film for semiconductor processing, method for preparation of the same, and protective film for semiconductor processing made from the coating liquid 有权
    用于形成用于半导体加工的保护膜的涂布液,其制备方法和由涂布液制成的用于半导体加工的保护膜

    公开(公告)号:US20090061199A1

    公开(公告)日:2009-03-05

    申请号:US11665747

    申请日:2005-10-11

    IPC分类号: B32B3/26 C09D7/12

    摘要: Disclosed is a coating liquid for forming a protective film having high film strength and a low specific dielectric constant for semiconductor processing, and a method for preparing the coating liquid. The coating liquid is a liquid composition comprising (a) silicon compound obtained by hydrolyzing tetraalkyl orthosilicate (TAOS) and alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, or a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl orthosilicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, mixing the hydrolyzed or partially hydrolyzed product with alkoxysilane (AS) or a hydrolyzed or partially hydrolyzed product thereof, and hydrolyzing all or a portion of the mixture, (b) an organic solvent, and (c) water. The coating liquid is characterized in that a quantity of water contained in the liquid composition is in the range from 35 to 65% by weight.

    摘要翻译: 公开了一种用于形成用于半导体加工的具有高膜强度和低比介电常数的保护膜的涂布液,以及一种制备涂布液的方法。 涂布液是一种液体组合物,其包含(a)在四烷基氢氧化铵(TAAOH)和水的存在下水解四烷基原硅酸酯(TAOS)和烷氧基硅烷(AS)而获得的硅化合物,或通过水解或部分水解四烷基 在四烷基氢氧化铵(TAAOH)和水的存在下,将水解或部分水解的产物与烷氧基硅烷(AS)或其水解或部分水解产物混合,并水解所有或部分混合物,(b) )有机溶剂,和(c)水。 涂布液的特征在于,液体组合物中含有的水的量在35至65重量%的范围内。

    Coating Liquid for Forming Low Dielectric Constant Amorphous Silica-Based Coating Film and the Coating Film Obtained From the Same
    76.
    发明申请
    Coating Liquid for Forming Low Dielectric Constant Amorphous Silica-Based Coating Film and the Coating Film Obtained From the Same 有权
    用于形成低介电常数无定形二氧化硅基涂膜的涂布液和从其获得的涂膜

    公开(公告)号:US20090025609A1

    公开(公告)日:2009-01-29

    申请号:US12086745

    申请日:2006-12-15

    IPC分类号: C09D7/12 C07F7/18

    摘要: A coating liquid for forming a low dielectric constant amorphous silica-based coating film with a dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, and also having a smooth surface with an excellent hydrophobicity. The coating liquid contains (1) a silicon compound obtained by hydrolyzing bis(trialcoxysilyl)alkane (BTASA) and alcoxysilane (AS) in the presence of tetraalkylammoniumhydroxide (TAAOH), or (2) a silicon compound obtained by hydrolyzing bis(trialcoxysilyl)alkane (BTASA), alcoxysilane (AS) and tetraalkylorthosilicate (TAOS) in the presence of tetraalkylammoniumhydroxide (TAAOH).

    摘要翻译: 一种用于形成介电常数为3.0以下,膜强度(杨氏模量)为3.0GPa以上的低介电常数无定形二氧化硅系涂膜的涂布液,并且还具有疏水性优异的光滑表面。 涂布液含有(1)在四烷基氢氧化铵(TAAOH)存在下水解双(试剂 - 甲硅烷基)烷烃(BTASA)和烷氧基硅烷(AS))得到的硅化合物,或(2)通过水解双(试剂 - 甲硅烷基)烷烃获得的硅化合物 (BTASA),烷氧基硅烷(AS)和四烷基原硅酸盐(TAOS)在四烷基氢氧化铵(TAAOH)存在下。

    Process for producing integrated circuit, and substrate with integrated circuit
    78.
    发明授权
    Process for producing integrated circuit, and substrate with integrated circuit 有权
    集成电路生产工艺,集成电路基板

    公开(公告)号:US07163892B2

    公开(公告)日:2007-01-16

    申请号:US10275087

    申请日:2001-04-23

    CPC分类号: H01L21/76877 H01L21/288

    摘要: There is provided a process for producing an integrated circuit, wherein not only can conductive fine particles be deposited efficiently and densely in minute wiring channels and connecting holes but also a circuit of low wiring resistance and high density can be formed and wherein a high-degree integration can be achieved to thereby bring about an economic advantage. In particular, there is provided a process for producing an integrated circuit, comprising coating a substrate provided with wiring channels with a coating liquid for integrated circuit formation containing conductive fine particles to thereby form an integrated circuit on the substrate, wherein the coating liquid for integrated circuit formation while being exposed to ultrasonic waves is applied to the wiring channels.

    摘要翻译: 提供了一种用于制造集成电路的方法,其中不仅可以在微小的布线通道和连接孔中有效且致密地沉积导电细颗粒,而且可以形成低布线电阻和高密度的电路,其中高度 可以实现一体化,从而带来经济优势。 具体地说,提供了一种集成电路的制造方法,其特征在于,在具有布线通道的基板上涂布含有导电性微粒的集成电路形成用涂布液,从而在基板上形成集成电路,其特征在于, 暴露于超声波的电路形成被施加到布线通道。

    Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film
    79.
    发明授权
    Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film 有权
    形成具有低介电常数的含二氧化硅的涂膜和涂覆有这种膜的半导体衬底的方法

    公开(公告)号:US06599846B2

    公开(公告)日:2003-07-29

    申请号:US09914418

    申请日:2001-08-28

    IPC分类号: H01L2131

    CPC分类号: H01L21/316

    摘要: The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film with the low-dielectric constant onto the semiconductor substrate, (b) heating the thus coated film at 50 to 350° C., and then (c) curing the thus treated film at 350 to 450° C. in an inert-gas atmosphere containing 500 to 15,000 ppm by volume of oxygen, and also provides a semiconductor substrate having a silica-containing film formed by the above method. The above step (b) for the thermal treatment is preferably conducted at 150 to 350° C. for 1 to 3 minutes in an air atmosphere. Also, the above curing step (c) is preferably conducted by placing the semiconductor substrate on a hot plate kept at 350 to 450° C. According to the present invention, a semiconductor substrate coated with a silica-containing film having characteristics of a low-dielectric constant of 3 or less, a low moisture adsorptivity and high film strength without causing any damage to the metal wiring arranged on the substrate, can be obtained steadily.

    摘要翻译: 本发明提供一种在半导体基板上稳定地形成具有3以下的低介电常数的含二氧化硅的膜的方法,该方法包括以下步骤:(a)将形成含二氧化硅的膜的涂布液涂布到低 (b)在50至350℃下加热涂覆的膜,然后(c)在350至450℃下在含有500至500℃的惰性气体气氛中固化如此处理的膜 15000体积ppm的氧,并且还提供具有通过上述方法形成的含二氧化硅的半导体衬底。用于热处理的上述步骤(b)优选在150-350℃下进行1至3分钟 在空气气氛中。 此外,上述固化步骤(c)优选通过将半导体衬底放置在保持在350至450℃的热板上来进行。根据本发明,涂覆了具有低特性的含二氧化硅的膜的半导体衬底 - 可以稳定地获得3或更小的吸湿性和低膜强度,而不会对布置在基底上的金属布线造成任何损坏。

    Coating liquid for forming a silica-containing film with a low-dielectric constant and substrate coated with such a film
    80.
    发明授权
    Coating liquid for forming a silica-containing film with a low-dielectric constant and substrate coated with such a film 有权
    用于形成具有低介电常数的含二氧化硅的膜和用这种膜涂覆的基材的涂布液

    公开(公告)号:US06562465B1

    公开(公告)日:2003-05-13

    申请号:US09446686

    申请日:1999-12-23

    IPC分类号: B32B2736

    摘要: A coating liquid for forming a silica-based film having a low dielectric constant, as low as 3 or less, comprising (i) silica-based fine particles having phenyl groups and (ii) a polysiloxazane which can be produced by reacting hydrolyzate of an alkoxysilane represented by the formula (XnSi(OR1)4−n)and/or hydrolyzate of a halogenated silane represented by the formula (XnSiX′4−n) with a polysilazane represented by —(SiR2R4—NR3)—m, or a coating-liquid for forming the silica-based film, comprising (i) silica-based fine particles having phenyl groups and (ii′) an oxidatively decomposable resin with the weight ratio of the particles to the resin being in the range of 0.5 to 5.

    摘要翻译: 一种用于形成低介电常数低至3或更低的二氧化硅基膜的涂布液,其包含(i)具有苯基的二氧化硅基微粒和(ii)聚硅氧氮烷,其可以通过使 由式(XnSi(OR1)4-n)表示的烷氧基硅烷和/或由式(XnSiX'4-n)表示的卤代硅烷与 - (SiR2R4-NR3)-m表示的聚硅氮烷的水解产物或涂层 - 用于形成二氧化硅基膜的液体,其包含(i)具有苯基的二氧化硅基微粒和(ii')具有颗粒与树脂的重量比在0.5至5的氧化分解性树脂。