摘要:
The process for preparing tubular titanium oxide particles comprises subjecting a water dispersion sol, which is obtained by dispersing (i) titanium oxide particles and/or (ii) titanium oxide type composite oxide particles comprising titanium oxide and an oxide other than titanium oxide in water, said particles having an average particle diameter of 2 to 100 nm, to hydrothermal treatment in the presence of an alkali metal hydroxide. After the hydrothermal treatment, reduction treatment (including nitriding treatment) may be carried out. The tubular titanium oxide particles obtained in this process are useful as catalysts, catalyst carriers, adsorbents, photocatalysts, decorative materials, optical materials and photoelectric conversion materials. Especially when the particles are used for semiconductor films for photovoltaic cells or photocatalysts, prominently excellent effects are exhibited.
摘要:
An antibacterial substance, and more particularly, an antibacterial substance which displays antibacterial, anti-mold, and deodorizing effects when added to resins, paints, textile fibers and cosmetics.
摘要:
Anti-bacterial film according to the present invention is suitable for use as food packaging wrap, and is given with the properties required for such film, such as a clinging property, transparency, and an anti-fogging property, as well as a high anti-bacterial property. The anti-bacterial film according to the present invention comprises, for 100 weight parts of PVC resin, 5 to 50 weight parts of a plasticizer, 0.3 to 3.0 weight parts of a stabilizer, 0.02 to 1.0 weight parts of hydrotalcite, 0.5 to 5.0 weight parts of an anti-fogging agent, and 0.02 to 2.0 weight parts of an anti-bacterial compound. The anti-bacterial compound may consist of a compound obtained by ion exchanging metallic ions of inorganic oxo-acid salt in the form of irregular particles having a particle diameter no more than 0.5 .mu.m with metallic ions having an anti-bacterial property, or a compound obtained by physically or chemically attaching metallic components having an anti-bacterial property to colloidal particles of inorganic oxides such as SiO.sub.2, TiO.sub.2, SiO.sub.2.Al.sub.2 O.sub.3 and SiO.sub.2.B.sub.2 O.sub.3 having a particle diameter no more than 500 nm and forming a colloidal solution.
摘要:
Present invention provides an antibacterial deodorant with antibacterial characteristics and high deodorizing capability. The antibacterial deodorant is inorganic oxide particles comprising a metal component and an inorganic oxide other than the metal component, the inorganic oxide includes titanium oxide and silica and/or zirconia, and the titanium oxide is crystalline titanium oxide. A content of the metal component in the inorganic oxide particles is in a range from 0.1 to 30% by weight as converted to an oxide thereof, and an average particle diameter of the inorganic oxide particle is in a range from 2 to 500 nm.
摘要:
Present invention provides an antibacterial deodorant with antibacterial characteristics and high deodorizing capability. The antibacterial deodorant is inorganic oxide particles comprising a metal component and an inorganic oxide other than the metal component, the inorganic oxide includes titanium oxide and silica and/or zirconia, and the titanium oxide is crystalline titanium oxide. A content of the metal component in the inorganic oxide particles is in a range from 0.1 to 30% by weight as converted to an oxide thereof, and an average particle diameter of the inorganic oxide particle is in a range from 2 to 500 nm.
摘要:
A controller is formed as one chip, and controls a voltage regulator that supplies a power supply voltage to a CPU. The controller includes: an input unit for receiving a monitor voltage for monitoring the power supply voltage applied to the CPU; a control unit for detecting that the power supply voltage is decreased to a target voltage by the monitor voltage with the voltage regulator being in OFF state in a discharge mode; and an output unit for outputting a result signal indicating to make transition to a normal mode, when the power supply voltage has reached the target voltage. The control unit includes a calculation circuit, which is operated in accordance with a program. The calculation circuit is provided between the input unit and the output unit.
摘要:
A composite oxide with a high oxygen storage capacity is provided without using cerium. The composite oxide is an iron oxide-zirconia composite oxide containing iron, zirconium, and a rare-earth element. The total content of Fe2O3, ZrO2, and an oxide of the rare-earth element is not less than 90 mass %, the content of an iron oxide in terms of Fe2O3 is 10 to 90 mass %, and the absolute value of the covariance COV(Fe, Zr+X) of the composite oxide, which has been baked in the atmosphere at a temperature of greater than or equal to 900° C. for 5 hours or more, is not greater than 20.
摘要:
There are included a communication part performing communication with other device; a command managing part transmitting a command of an own device to other device and receiving a command of other device to acquire the command of other device by the communication part, and managing the command of the own device and the command of other device; and a command processing part executing processing of a function corresponding to the command of the own device by the own device when a command selected from the commands managed by the command managing part is the command of the own device, and executing processing of a function corresponding to the command of other device by the other device when the command selected is the command of the other device.
摘要:
A management apparatus for managing a content display change time on a display apparatus and content information to be transmitted to a terminal determines the content information to be transmitted to the terminal on the basis of a reception time of a content information request command transmitted from the terminal and the content display change time on the display apparatus.
摘要:
A thin film transistor includes: a substrate; and, on the substrate, an oxide semiconductor film which serves as an active layer and contains In, Ga, and Zn, a gate electrode, a gate insulating film, a source electrode, and a drain electrode, wherein, when a molar ratio of In, Ga, and Zn in the oxide semiconductor film is expressed as In:Ga:Zn=(2.0−x):x:y, wherein 0.0