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139 条记录 (耗时 0.034 秒)

    Non-volatile programmable logic gates and adders
    71.
    发明授权
    Non-volatile programmable logic gates and adders 有权
    非易失性可编程逻辑门和加法器

    公开(公告)号：US08179716B2

    公开(公告)日：2012-05-15

    申请号：US12953544

    申请日：2010-11-24

    申请人： Haiwen Xi ,  Yang Li ,  Song S. Xue

    发明人： Haiwen Xi ,  Yang Li ,  Song S. Xue

    IPC分类号： G11C11/00

    CPC分类号： H03K19/173 ,  G11C11/161 ,  G11C11/1673

    摘要： Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer.

    摘要翻译： 具有至少一个输入元件和输出元件的自旋扭矩磁逻辑器件。 通过输入元件施加电流，并测量输出元件两端产生的电阻或电压。 输入元件包括自由层，并且输出元件包括电连接到输入元件的自由层的自由层。 输入元件和输出元件的自由层可以通过静磁耦合电连接，或者可以物理耦合。 在一些实施例中，输出元件可以具有多于一个的自由层。

    Spin-torque probe microscope
    72.
    发明授权
    Spin-torque probe microscope 有权
    旋转力矩探头显微镜

    公开(公告)号：US08069492B2

    公开(公告)日：2011-11-29

    申请号：US12059407

    申请日：2008-03-31

    申请人： Haiwen Xi ,  Song S. Xue

    发明人： Haiwen Xi ,  Song S. Xue

    IPC分类号： G01Q60/08

    CPC分类号： G01Q60/52 ,  G01N24/10 ,  G01R33/323

    摘要： A spin-torque probe microscope and methods of using the same are described. The spin-torque probe microscope includes a cantilever probe body, a magnetic tip disposed at a distal end of the cantilever probe body, an electrically conductive sample disposed proximate to the magnetic tip, an electrical circuit providing a spin-polarized electron current to the electrically conductive sample, and a vibration detection element configured to sense vibration frequency of the cantilever probe body. The spin-polarized electron current is sufficient to alter a local electron spin or magnetic moment within the electrically conductive sample and be sensed by the magnetic tip.

    摘要翻译： 描述了自旋扭矩探针显微镜及其使用方法。 旋转扭矩探针显微镜包括悬臂探针体，设置在悬臂探头主体的远端的磁尖，靠近磁尖设置的导电样品，向电气提供自旋极化电子电流的电路 导电样品和被配置为感测悬臂探针体的振动频率的振动检测元件。 自旋极化电子电流足以改变导电样品内的局部电子自旋或磁矩，并由磁尖检测。

    Memory device structures including phase-change storage cells
    75.
    发明授权
    Memory device structures including phase-change storage cells 有权
    包括相变存储单元的存储器件结构

    公开(公告)号：US07848139B2

    公开(公告)日：2010-12-07

    申请号：US12233389

    申请日：2008-09-18

    申请人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

    发明人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

    IPC分类号： G11C11/00

    CPC分类号： G11C13/004 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/144

    摘要： A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

    摘要翻译： 存储器件的导电写入线包括用于设置和复位器件的相变材料（PCM）存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸，并提供电绝缘，同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度，电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道，使得电阻加热部分位于通道内。

    Non-volatile memory cell with enhanced filament formation characteristics
    76.
    发明授权
    Non-volatile memory cell with enhanced filament formation characteristics 有权
    具有增强的细丝形成特性的非挥发性记忆体

    公开(公告)号：US07795606B2

    公开(公告)日：2010-09-14

    申请号：US12261137

    申请日：2008-10-30

    申请人： Insik Jin ,  Yang Li ,  Dadi Setiadi ,  Song S. Xue

    发明人： Insik Jin ,  Yang Li ,  Dadi Setiadi ,  Song S. Xue

    IPC分类号： H01L29/04

    CPC分类号： H01L45/1226 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/1675

    摘要： Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode.

    摘要翻译： 用于构造诸如修改的RRAM单元的非易失性存储单元的方法和装置。 在一些实施例中，存储单元包括设置在第一电极层和第二电极层之间的电阻存储层。 此外，在一些实施例中，存储层具有减小厚度的局部区域，以便于通过存储层从第一电极到第二电极的形成导电细丝。

    MEMORY WITH SEPARATE READ AND WRITE PATHS
    78.
    发明申请
    MEMORY WITH SEPARATE READ AND WRITE PATHS 有权
    具有单独读取和写入数据的存储器

    公开(公告)号：US20100054026A1

    公开(公告)日：2010-03-04

    申请号：US12198416

    申请日：2008-08-26

    申请人： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    发明人： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    摘要： A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line and a magnetic tunnel junction data cell electrically coupled between a read bit line and a read source line. A write current passing through the giant magnetoresistance cell switches the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell. The magnetic tunnel junction data cell is read by a read current passing though the magnetic tunnel junction data cell.

    摘要翻译： 存储单元包括电耦合在写位线和写入源线之间的电磁耦合单元和电耦合在读取位线和读取源极线之间的磁性隧道结数据单元的巨磁电阻单元。 通过巨磁电阻单元的写入电流将巨磁阻单元切换到高电阻状态和低电阻状态之间。 磁隧道结数据单元被配置为通过与巨磁阻单元的静磁耦合在高电阻状态和低电阻状态之间切换。 磁隧道结数据单元由通过磁性隧道结数据单元的读取电流读取。

    MAGNETIC OSCILLATOR WITH MULTIPLE COHERENT PHASE OUTPUT
    80.
    发明申请
    MAGNETIC OSCILLATOR WITH MULTIPLE COHERENT PHASE OUTPUT 有权
    具有多个相干相位输出的磁振荡器

    公开(公告)号：US20090302953A1

    公开(公告)日：2009-12-10

    申请号：US12132676

    申请日：2008-06-04

    申请人： Haiwen Xi ,  Dian Song ,  Song S. Xue

    发明人： Haiwen Xi ,  Dian Song ,  Song S. Xue

    IPC分类号： H03B25/00

    CPC分类号： H03B27/00 ,  H03B15/006

    摘要： Apparatus to generate signals with multiple phases are described. The apparatus includes a fixed multilayer stack providing a varying magnetic field and at least two sensors adjacent the fixed multilayer stack to sense the varying magnetic field and generate at least two output signals. The frequency of the output signals can be tuned by an input current.

    摘要翻译： 描述用于产生具有多个相位的信号的装置。 该装置包括提供变化的磁场的固定多层堆叠和与固定多层堆叠相邻的至少两个传感器，以感测变化的磁场并产生至少两个输出信号。 可以通过输入电流调节输出信号的频率。