中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

133 records (took 0.02 seconds)

    POSITIVE ELECTRODE ACTIVE MATERIAL
    72.
    发明申请
    POSITIVE ELECTRODE ACTIVE MATERIAL 审中-公开
    正极电极活性材料

    公开(公告)号：US20150263331A1

    公开(公告)日：2015-09-17

    申请号：US14698896

    申请日：2015-04-29

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Akiharu MIYANAGA ,  Junichi KOEZUKA ,  Masahiro TAKAHASHI

    IPC: H01M4/04 ,  H01M4/58 ,  H01M4/136

    CPC classification number: H01M4/045 ,  C01B25/45 ,  H01M4/136 ,  H01M4/5825 ,  H01M10/054 ,  H01M2004/028

    Abstract: A highly effective positive electrode is obtained by using a material such as Na which is an inexpensive abundant resource. A positive electrode active material of sodium transition metal phosphate of olivine structure in which the sodium transition metal phosphate of olivine structure includes, a phosphorus atom that is located at the center of a tetrahedron having an oxygen atom in each vertex, a transition metal atom that is located at the center of a first octahedron having an oxygen atom in each vertex; and a sodium atom that is located at the center of a second octahedron having an oxygen atom in each vertex, and adjacent sodium atoms are arranged one-dimensionally in a direction.

    Abstract translation: 通过使用廉价的丰富资源的Na等材料，可以获得高效的正极。 橄榄石结构的过渡金属磷酸钠的正极活性物质，其中橄榄石结构的过渡金属磷酸钠包括位于每个顶点中具有氧原子的四面体的中心的磷原子，过渡金属原子， 位于每个顶点中具有氧原子的第一八面体的中心; 位于每个顶点中具有氧原子的第二八面体的中心的钠原子，并且相邻的钠原子在<010>方向上一维排列。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    73.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20140367682A1

    公开(公告)日：2014-12-18

    申请号：US14474609

    申请日：2014-09-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

    IPC: H01L29/786 ,  H01L29/423 ,  H01L29/51

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

    Abstract: An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

    Abstract translation: 本发明的目的是提供一种包括具有稳定电特性的氧化物半导体的半导体器件。 在氧化物半导体层上形成具有以悬挂键为代表的许多缺陷的绝缘层，其间具有氧过剩混合区域或氧过剩氧化物绝缘层，由此氧化物半导体层中的诸如氢或水分的杂质（ 氢原子或包含氢原子如H 2 O的化合物）通过氧过剩混合区域或氧 - 过量氧化物绝缘层移动并扩散到绝缘层中。 因此，氧化物半导体层的杂质浓度降低。

    OXIDE SEMICONDUCTOR
    74.
    发明申请
    OXIDE SEMICONDUCTOR 有权
    氧化物半导体

    公开(公告)号：US20140284596A1

    公开(公告)日：2014-09-25

    申请号：US14208661

    申请日：2014-03-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Noboru KIMIZUKA

    IPC: H01L29/22 ,  H01L29/04

    CPC classification number: C01G15/00 ,  C01G15/006 ,  C01P2002/60 ,  C01P2002/70 ,  C01P2002/74 ,  C01P2002/77 ,  C01P2004/04 ,  C01P2004/54 ,  C01P2006/10 ,  C01P2006/40 ,  H01L29/04 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/7869

    Abstract: To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO4 crystals each of which is larger than or equal to 1 nm and smaller than or equal to 3 nm, and in the oxide semiconductor, the plurality of InGaZnO4 crystals have no orientation. Alternatively, such an oxide semiconductor is such that a diffraction pattern like a halo pattern is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 300 nm, and that a diffraction pattern having a plurality of spots arranged circularly is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 1 nm and smaller than or equal to 30 nm

    Abstract translation: 提供具有新颖结构的氧化物半导体。 这种氧化物半导体由多个InGaZnO 4晶体的聚集构成，每个InGaZnO 4晶体大于或等于1nm且小于或等于3nm，并且在氧化物半导体中，多个InGaZnO 4晶体没有取向。 或者，这样的氧化物半导体使得通过使用探针直径大于或等于300nm的电子束进行的电子衍射测量观察到类似晕圈图案的衍射图案，并且具有多个点的衍射图案 通过使用探针直径大于或等于1nm且小于或等于30nm的电子束进行的电子衍射测量观察圆形排列

    POSITIVE ELECTRODE ACTIVE MATERIAL PARTICLE
    75.
    发明公开
    POSITIVE ELECTRODE ACTIVE MATERIAL PARTICLE 审中-公开

    公开(公告)号：US20240186486A1

    公开(公告)日：2024-06-06

    申请号：US18442450

    申请日：2024-02-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Masahiro TAKAHASHI ,  Teruaki OCHIAI ,  Yohei MOMMA ,  Ayae TSURUTA

    IPC: H01M4/36 ,  H01M4/02 ,  H01M4/505 ,  H01M4/525

    CPC classification number: H01M4/364 ,  H01M4/505 ,  H01M4/525 ,  H01M2004/028

    Abstract: A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain, and a crystal grain boundary positioned between the crystal grain and the second crystal grain; the first crystal grain and the second crystal grain include lithium, a transition metal, and oxygen; the crystal grain boundary includes magnesium and oxygen; and the positive electrode active material particle includes a region where the ratio of the atomic concentration of magnesium in the crystal grain boundary to the atomic concentration of the transition metal in first crystal grain and the second crystal grain is greater than or equal to 0.010 and less than or equal to 0.50.

Patent Agency Ranking