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    Method and apparatus for performing self-referenced read in a magnetoresistive random access memory
    78.
    发明授权
    Method and apparatus for performing self-referenced read in a magnetoresistive random access memory 有权

    公开(公告)号：US10573363B2

    公开(公告)日：2020-02-25

    申请号：US15087939

    申请日：2016-03-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Alexey Vasilyevich Khvalkovskiy ,  Vladimir Nikitin ,  Dmytro Apalkov

    IPC: G11C11/16

    Abstract: A method of reading information stored in a magnetic memory. In a magnetic memory comprising a magnetic tunnel junction including a first reference layer and a free layer, and a spin orbit active (SO) line adjacent to the first reference layer of the magnetic tunnel junction, first and second currents are passed through the SO line so as to achieve two different directions of a magnetic moment of the first reference layer. Two electrical characteristics of the magnetic tunnel junction are determined, the two electrical characteristics corresponding to the two different directions of the magnetic moment of the first reference layer. These two electrical characteristics are then compared to determine the value of the stored information.

    VERTICAL SPIN ORBIT TORQUE DEVICES
    79.
    发明申请
    VERTICAL SPIN ORBIT TORQUE DEVICES 审中-公开

    公开(公告)号：US20190273202A1

    公开(公告)日：2019-09-05

    申请号：US15968514

    申请日：2018-05-01

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Vladimir Nikitin ,  Dmytro Apalkov

    IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/12

    Abstract: A magnetic device and method for programming the magnetic device are described. The magnetic device includes a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer having a plurality of sides. The SO active layer(s) carry a current in direction(s) substantially perpendicular to the plurality of sides. Each of the magnetic junction(s) is adjacent to the sides and substantially surrounds a portion of the SO active layer. Each magnetic junction includes a free layer, a reference layer and a nonmagnetic spacer layer between the pinned and free layers. The SO active layer(s) exert a SO torque on the free layer due to the current passing through the SO active layer(s). The free layer is switchable between stable magnetic states. The free layer may be written using the current and, in some aspects, another current driven through the magnetic junction.

    SELECTORLESS, 3D STACKABLE CROSSPOINT MEMORY
    80.
    发明申请
    SELECTORLESS, 3D STACKABLE CROSSPOINT MEMORY 审中-公开

    公开(公告)号：US20190079701A1

    公开(公告)日：2019-03-14

    申请号：US15845985

    申请日：2017-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Titash Rakshit ,  Borna J. Obradovic ,  Ryan M. Hatcher ,  Vladimir Nikitin ,  Dmytro Apalkov

    IPC: G06F3/06 ,  H01L21/3105 ,  H01L21/822 ,  H01L27/11578

    Abstract: A memory device and method for providing the memory device are described. The memory device includes word lines, a first plurality of bit lines, a second plurality of bit lines and selectorless memory cells. Each selectorless memory cell is coupled with a word line, a first bit line of the first plurality of bit lines and a second bit line of the second plurality of bit lines. The selectorless memory cell includes first and second magnetic junctions. The first and second magnetic junctions are each programmable using a spin-orbit interaction torque. The word line is coupled between the first and second magnetic junctions. The first and second bit lines are coupled with the first and second magnetic junctions, respectively. The selectorless memory cell is selected for a write operation based on voltages in the word line, the first bit line and the second bit line.

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