公开(公告)号：US20250079249A1

公开(公告)日：2025-03-06

申请号：US18791760

申请日：2024-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongbeom Ko ,  Kyounglim Suk ,  Jaegun Shin ,  Sanghoon Lee ,  Woojin Jang ,  Gwangjae Jeon

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/29 ,  H01L25/18

Abstract: A semiconductor package includes a buffer die, an intermediate core die stack on the buffer die, where the intermediate core die stack includes a plurality of intermediate core dies and a plurality of first gap filling portions that respectively overlap side surfaces of the plurality of intermediate core dies in a first direction, a top core die on the intermediate core die stack, and a second gap filling portion that overlaps side surfaces of the intermediate core die stack in the first direction and side surfaces of the top core die in the first direction.

公开(公告)号：US12214662B2

公开(公告)日：2025-02-04

申请号：US17953431

申请日：2022-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngil Kim ,  Taejun Kim ,  Bosung Seo ,  Sanghoon Lee ,  Youngseok Lee ,  Woong Lee

IPC: B60K35/00 ,  B60K35/10 ,  B60K35/21 ,  B60K35/28 ,  B60K35/29 ,  B60K35/85 ,  G06T19/00

Abstract: Provided are an electronic device mounted on a vehicle and an operating method of the electronic device. An electronic device, according to an embodiment of the disclosure, obtains a surrounding environment image by using a camera, detects at least one object from the surrounding environment image by using an artificial intelligence (AI) model, receives a vehicle to everything (V2X) data set including information about the at least one object, selects a first object in the detected at least one object by a user input, obtains information about a type of the first object by using a detection result determined based on the surrounding environment image and the received V2X data set, and displays a user interface (UI) for wireless communication connection with the first object, based on the information about the type of the first object.

公开(公告)号：US12132019B2

公开(公告)日：2024-10-29

申请号：US18151622

申请日：2023-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuekjae Lee ,  Jongho Lee ,  Jihoon Kim ,  Taehun Kim ,  Sangcheon Park ,  Jinkyeong Seol ,  Sanghoon Lee

IPC: H01L21/56 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L24/06 ,  H01L21/561 ,  H01L24/05 ,  H01L24/08 ,  H01L24/13 ,  H01L24/32 ,  H01L24/92 ,  H01L24/94 ,  H01L24/96 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/05025 ,  H01L2224/05073 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/06182 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/08148 ,  H01L2224/08225 ,  H01L2224/13024 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/80895 ,  H01L2224/83099 ,  H01L2224/8389 ,  H01L2224/92142 ,  H01L2225/06541 ,  H01L2225/06548

Abstract: A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

公开(公告)号：US20240235383A9

公开(公告)日：2024-07-11

申请号：US18237122

申请日：2023-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonmyung Woo ,  Duhee Jang ,  Duhee Jang ,  Jeongil Kang ,  Hyungwan Kim ,  Sanghoon Lee

IPC: H02M1/42 ,  H02M1/38

CPC classification number: H02M1/4225 ,  H02M1/385

Abstract: The present disclosure provides power supply apparatuses and controlling methods thereof. In some embodiments, a power supply apparatus includes a power factor correction (PFC) circuit, and a control circuit configured to control the PFC circuit. The PFC circuit includes a power inputter configured to receive alternating current voltage to be rectified, an inductor having an end coupled to an end of the power inputter, a first switching element configured to be turned on and off according to a first control signal, a second switching element configured to be turned on and off according to a second control signal, and an outputter configured to output a direct current voltage through an output capacitor. The control circuit is further configured to respectively apply the first and second control signals to the first and second switching elements such that the first and the second switching elements are alternately turned on.

公开(公告)号：US12034547B2

公开(公告)日：2024-07-09

申请号：US17136561

申请日：2020-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gupil Cheong ,  Hangil Moon ,  Sanghoon Lee ,  Juyeon Jin ,  Doosuk Kang ,  Bokun Choi

IPC: H04L1/00 ,  H04L1/1812 ,  H04L1/1829 ,  H04W56/00 ,  H04W72/0446 ,  H04W76/15

CPC classification number: H04L1/1832 ,  H04L1/1819 ,  H04W56/001 ,  H04W72/0446 ,  H04W76/15

Abstract: Disclosed is an electronic device including: a first communication circuit configured to support wireless communication, a second communication circuit configured to support Bluetooth communication, a processor operatively connected to the first communication circuit and the second communication circuit, and a memory operatively connected to the processor. The processor may be configured to control the electronic device to: create a link with a first device based on a synchronous connection protocol using the second communication circuit, receive, from the first device via the link, second data obtained by the first device on a second time slot among a plurality of time slots of a transmission/reception period of the link, receive third data including additional data for the second data within a retransmission window configured for data retransmission among the plurality of time slots, and transmit audio data generated based on the second data and the third data to an external electronic device using the first communication circuit.

公开(公告)号：US11848301B2

公开(公告)日：2023-12-19

申请号：US18128449

申请日：2023-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonggu Lee ,  Sunghyup Kim ,  Byungjo Kim ,  Sanghoon Lee ,  Sukwon Lee ,  Sebin Choi

IPC: H01L23/00 ,  B29C65/30 ,  B29C65/00

CPC classification number: H01L24/75 ,  B29C65/30 ,  B29C66/8185 ,  H01L2224/75252 ,  H01L2224/75502 ,  H01L2224/75745 ,  H01L2224/75984

Abstract: A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

公开(公告)号：US11552033B2

公开(公告)日：2023-01-10

申请号：US17155657

申请日：2021-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuekjae Lee ,  Jongho Lee ,  Jihoon Kim ,  Taehun Kim ,  Sangcheon Park ,  Jinkyeong Seol ,  Sanghoon Lee

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/00 ,  H01L25/18 ,  H01L25/00

Abstract: A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

公开(公告)号：US11341981B2

公开(公告)日：2022-05-24

申请号：US16793370

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hangil Moon ,  Hyunwook Kim ,  Sanghoon Lee ,  Euibum Han

IPC: G10L21/04 ,  G10L19/16 ,  H04R3/00

Abstract: Disclosed is an electronic device including a speaker, a communication circuit, a processor, and a memory. The processor is configured to receive first data including a first audio frame corresponding to a first interval and a second audio frame corresponding to a second interval subsequent to the first interval, using the communication circuit, to store the second audio frame in the memory in response to reception of the first data, to output a first audio signal generated based on the first audio frame, through the speaker, and to store the third audio frame in the memory and output a second audio signal generated based on the second audio frame of the second data through the speaker when second data including the second audio frame and a third audio frame corresponding to a third interval subsequent to the second interval is received using the communication circuit.

公开(公告)号：US20220115539A1

公开(公告)日：2022-04-14

申请号：US17560804

申请日：2021-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghoon Lee ,  Krishna Bhuwalka ,  Myunggil Kang ,  Kyoungmin Choi

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/10 ,  H01L29/786 ,  H01L29/423

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure having a plurality of first semiconductor patterns and a plurality of second semiconductor patterns alternately stacked on a substrate, and extending in a first direction. The semiconductor device includes a semiconductor cap layer on an upper surface of the fin structure, and extending along opposite side surfaces of the fin structure in a second direction crossing the first direction. The semiconductor device includes a gate electrode on the semiconductor cap layer, and extending in the second direction. The semiconductor device includes a gate insulating film between the semiconductor cap layer and the gate electrode. Moreover, the semiconductor device includes a source/drain region connected to the fin structure. The plurality of first semiconductor patterns include silicon germanium (SiGe) having a germanium (Ge) content in a range of 25% to 35%, and the plurality of second semiconductor patterns include silicon (Si).

公开(公告)号：US11251197B2

公开(公告)日：2022-02-15

申请号：US16927044

申请日：2020-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghoon Lee

IPC: H01L29/792 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/522 ,  H01L27/11573 ,  H01L27/11565

Abstract: A semiconductor device including a lower structure, an upper pattern, a stacked structure, a separation structure passing through the stacked structure, a vertical structure comprising a channel layer, wherein the stacked structure comprises a plurality of interlayer insulating layers and a plurality of gate layers, the lower structure comprises a first lower pattern and a second lower pattern of a material different from a material of the first lower pattern, the first lower pattern comprises a first portion between the second lower pattern and the channel layer, a second portion extending from the first portion to a region between the second lower pattern and the upper pattern, and a third portion extending from the first portion to a region between the second lower pattern and the substrate structure, and the first lower pattern does not extend toward a side surface of the upper pattern.