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    SEMICONDUCTOR DEVICE
    71.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20140252347A1

    公开(公告)日：2014-09-11

    申请号：US14281031

    申请日：2014-05-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78606

    Abstract: Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide semiconductor layer has capacitance of lower than or equal to 2×10−4 F/m2. For example, in the case of a top-gate transistor, a base insulating layer has capacitance of lower than or equal to 2×10−4 F/m2, whereby the adverse effect of an interface state between the substrate and the base insulating layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.

    Abstract translation: 公开了具有使用氧化物半导体的晶体管的半导体器件。 氧化物半导体层的背面通道侧的绝缘层的电容为2×10 -4 F / m 2以下。 例如，在顶栅晶体管的情况下，基极绝缘层具有小于或等于2×10 -4 F / m 2的电容，由此衬底和基极绝缘层之间的界面态的不利影响 可以减少 因此，可以制造电特性波动小，可靠性高的半导体装置。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    72.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20140073085A1

    公开(公告)日：2014-03-13

    申请号：US14082505

    申请日：2013-11-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

    IPC: H01L21/02 ,  H01L29/66

    CPC classification number: H01L21/02664 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

    Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.

    Abstract translation: 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在制造半导体器件的方法中，该半导体器件包括薄膜晶体管，其中使用氧化物半导体层形成包括使用氧化物半导体层的沟道形成区域，源极区域和漏极区域的半导体层，用于减少杂质的热处理 例如水分（用于脱水或脱氢的热处理）以提高氧化物半导体层的纯度。

    SEMICONDUCTOR DEVICE
    75.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20140001466A1

    公开(公告)日：2014-01-02

    申请号：US13920442

    申请日：2013-06-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Toshinari SASAKI ,  Takashi HAMOCHI ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

    IPC: H01L29/24

    CPC classification number: H01L29/247 ,  H01L29/78606 ,  H01L29/7869

    Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.

    Abstract translation: 在包括氧化物半导体膜的晶体管中，抑制了氢和氮向氧化物半导体膜的移动。 此外，在使用包含氧化物半导体膜的晶体管的半导体器件中，抑制了电特性的变化，提高了可靠性。 包括设置在晶体管上的氧化物半导体膜和氮化物绝缘膜的晶体管，通过热解吸光谱法从氮化物绝缘膜释放的氢分子的量小于5×1021分子/ cm 3，优选小于或等于 至3×1021分子/ cm 3，更优选小于或等于1×1021分子/ cm 3，并且通过热解吸光谱从氮化物绝缘膜释放的氨分子的量小于1×1022分子/ cm 3，优选较小 5×10 21分子/ cm 3以上，更优选小于或等于1×1021分子/ cm 3。

    OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
    76.
    发明申请
    OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
    氧化物半导体膜和半导体器件

    公开(公告)号：US20130285045A1

    公开(公告)日：2013-10-31

    申请号：US13862716

    申请日：2013-04-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Toshinari SASAKI ,  Shuhei YOKOYAMA ,  Takashi HAMOCHI ,  Yusuke NONAKA ,  Yasuharu HOSAKA

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L27/1225

    Abstract: A method for evaluating an oxide semiconductor film, a method for evaluating a transistor including an oxide semiconductor film, a transistor which includes an oxide semiconductor film and has favorable switching characteristics, and an oxide semiconductor film which is applicable to a transistor and enables the transistor to have favorable switching characteristics are provided. A PL spectrum of an oxide semiconductor film obtained by low-temperature PL spectroscopy has a first curve whose local maximum value is found in a range of 1.6 eV or more and 1.8 eV or less and a second curve whose local maximum value is found in a range of 1.7 eV or more and 2.4 eV or less. A value obtained by dividing the area of the second curve by the sum of the area of the first curve and the area of the second curve is 0.1 or more and less than 1.

    Abstract translation: 一种用于评估氧化物半导体膜的方法，包括氧化物半导体膜的晶体管的评估方法，包括氧化物半导体膜并且具有良好的开关特性的晶体管，以及可应用于晶体管并使晶体管能够实现的氧化物半导体膜 具有良好的开关特性。 通过低温PL光谱获得的氧化物半导体膜的PL光谱具有第一曲线，其局部最大值在1.6eV以上至1.8eV以下的范围内，第二曲线的局部最大值位于 范围为1.7eV以上且2.4eV以下。 通过将第二曲线的面积除以第一曲线的面积和第二曲线的面积之和而得到的值为0.1以上且小于1。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    77.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20130157411A1

    公开(公告)日：2013-06-20

    申请号：US13767335

    申请日：2013-02-14

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO. Ltd

    Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

    IPC: H01L29/66

    CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

    Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

    Abstract translation: 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，使用氧化物半导体层形成具有沟道形成区域，源极区域和漏极区域的半导体层，进行热处理（脱水或脱氢的热处理） 以提高氧化物半导体层的纯度并减少诸如水分的杂质。 此外，在氧气氛下缓慢冷却经受热处理的氧化物半导体层。

    DISPLAY DEVICE AND ELECTRONIC DEVICE
    80.
    发明申请
    DISPLAY DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20250142891A1

    公开(公告)日：2025-05-01

    申请号：US19004596

    申请日：2024-12-30

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Hajime KIMURA ,  Kengo AKIMOTO ,  Masashi TSUBUKU ,  Toshinari SASAKI

    IPC: H10D30/67 ,  G09G3/36 ,  H10D86/40 ,  H10D86/60

    Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

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