公开(公告)号：US07166863B2

公开(公告)日：2007-01-23

申请号：US10941823

申请日：2004-09-16

申请人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa ,  Yutaka Shionoiri ,  Hiroyuki Miyake

发明人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa ,  Yutaka Shionoiri ,  Hiroyuki Miyake

IPC分类号： H01L29/04 ,  H01L31/036

CPC分类号： H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78696

摘要： A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.

摘要翻译： 提供能够高速运行，电流驱动能力高，多个元件之间波动小的半导体元件，以及包括半导体元件的半导体器件。 半导体元件具有包括多个晶体取向的第一晶体半导体区域，而绝缘表面实际上不具有晶界，第一晶体半导体区域被设置为共同连接到包括第一晶体半导体区域的导电区域和第二晶体半导体区域 区域，其中导电区域被设​​置成跨过线性条纹图案延伸的绝缘膜。

公开(公告)号：US20060270066A1

公开(公告)日：2006-11-30

申请号：US11405514

申请日：2006-04-18

申请人： Ryota Imahayashi ,  Shinobu Furukawa ,  Atsuo Isobe ,  Yasuyuki Arai ,  Shunpei Yamazaki

发明人： Ryota Imahayashi ,  Shinobu Furukawa ,  Atsuo Isobe ,  Yasuyuki Arai ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L51/0512 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/31683 ,  H01L51/0002 ,  H01L51/0055 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566

摘要： It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

摘要翻译： 本发明的目的是形成致密且具有很强绝缘电阻特性的高质量栅极绝缘膜，并且提出了隧道泄漏电流很小的高可靠性有机晶体管。 本发明的有机晶体管的一种模式具有如下步骤：通过使用密集的方法形成作为活化氧（或含氧气体）或氮（或含氮气体）的栅极的导电层形成栅极绝缘膜 等离子体，其中电子密度为10〜30cm -3以上，等离子体激活时电子温度为0.2eV〜2.0eV，直接与 作为要被绝缘的栅电极的导电层的一部分。

公开(公告)号：US07078768B2

公开(公告)日：2006-07-18

申请号：US10815701

申请日：2004-04-02

申请人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

发明人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

IPC分类号： H01L27/12

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/42384

摘要： A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400–700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1–5 μm wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.

公开(公告)号：US06841797B2

公开(公告)日：2005-01-11

申请号：US10338043

申请日：2003-01-08

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L31/36

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US06399960B1

公开(公告)日：2002-06-04

申请号：US09353370

申请日：1999-07-14

申请人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

发明人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

IPC分类号： H01L3300

CPC分类号： H01L27/1237 ,  G02F1/13454 ,  H01L27/1248 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78645

摘要： The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film or a Ta-based film having good heat resistance is used for forming interconnections, and the interconnections are covered with a protective film. The interconnections can be subjected to heat treatment at high temperatures (400 to 700° C.), and, in addition, the protective film serves as an etching stopper. In the peripheral driving circuit portion in the device, TFTs having an LDD structure are disposed in a self-aligned process in which is used side walls 126 and 127; while in the pixel matrix portion therein, TFTs having an LDD structure are disposed in a non-self-aligned process in which is used an insulator 125.

摘要翻译： 本发明提供一种用于制造在同一基板上具有不同LDD结构的TFT器件和TFT器件的高生产率方法。 具体地说，本发明提供了一种新颖的TFT结构，以及高生产率的制造方法。 使用具有良好耐热性的Ta膜或Ta基膜形成互连，并且互连用保护膜覆盖。 互连可以在高温（400〜700℃）下进行热处理，另外，保护膜用作蚀刻停止体。 在器件的外围驱动电路部分中，具有LDD结构的TFT以自对准工艺设置，其中使用侧壁126和127; 而在其中的像素矩阵部分中，具有LDD结构的TFT被设置在非自对准工艺中，其中使用绝缘体125。

公开(公告)号：US07785947B2

公开(公告)日：2010-08-31

申请号：US11410188

申请日：2006-04-25

申请人： Atsuo Isobe ,  Satoshi Murakami ,  Shunpei Yamazaki

发明人： Atsuo Isobe ,  Satoshi Murakami ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L27/1266 ,  H01L27/1248 ,  H01L27/1255

摘要： In order to manufacture a highly reliable and compact TFT, it is an object of the present invention to provide a method for manufacturing a semiconductor device for forming a gate electrode, a source wiring and a drain wiring with high reliability, and a semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film is formed over a substrate having an insulated surface, a gate insulating film is formed over the semiconductor film, a gate electrode is formed over the gate insulating film, and a nitride film is formed over the surface of the gate electrode by nitriding the surface of the gate electrode by using high-density plasma.

摘要翻译： 为了制造高度可靠且紧凑的TFT，本发明的目的是提供一种用于制造用于形成具有高可靠性的栅电极，源极布线和漏极布线的半导体器件的方法和半导体器件。 在半导体器件的制造方法中，在具有绝缘面的基板上形成半导体膜，在半导体膜上形成栅极绝缘膜，在栅极绝缘膜上形成栅电极，形成氮化膜 通过使用高密度等离子体氮化栅电极的表面，在栅电极的表面上。

公开(公告)号：US07736964B2

公开(公告)日：2010-06-15

申请号：US11274904

申请日：2005-11-16

申请人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

发明人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L21/6835 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/84 ,  H01L23/544 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L27/12 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/6677 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01Q1/38 ,  H01Q9/285 ,  H01Q23/00 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

摘要翻译： 本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜 晶体管，以及电路或半导体器件到具有柔性的衬底。 根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的 薄膜晶体管转置到具有导电膜等的基板上。 根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

公开(公告)号：US07582162B2

公开(公告)日：2009-09-01

申请号：US11600833

申请日：2006-11-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： C30B11/00 ,  C30B15/26 ,  H01L21/335

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US07410839B2

公开(公告)日：2008-08-12

申请号：US11410071

申请日：2006-04-25

申请人： Atsuo Isobe ,  Shunpei Yamazaki

发明人： Atsuo Isobe ,  Shunpei Yamazaki

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/3244 ,  H01L29/4908

摘要： The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition, the present invention provides a semiconductor device which realizes high-speed operation and high-performance of the semiconductor device and a manufacturing method thereof. Further in addition, it is an object of the present invention to provide a manufacturing method in which a manufacturing process is simplified. The semiconductor device of the present invention has an island-shaped semiconductor film formed over a substrate having an insulating surface and a gate electrode formed over the island-shaped semiconductor film, in which the gate electrode is oxidized its surface by high-density plasma to be slimmed and the substantial length of a channel is shortened.

摘要翻译： 本发明提供了一种薄膜晶体管，其中缩短了通道的相当长度以使半导体器件小型化及其制造方法。 另外，本发明提供实现半导体器件的高速操作和高性能的半导体器件及其制造方法。 另外，本发明的目的在于提供一种制造方法简化的制造方法。 本发明的半导体器件具有岛状半导体膜，该岛状半导体膜形成在具有绝缘面的基板上，形成在岛状半导体膜上的栅电极，其中栅电极通过高密度等离子体将其表面氧化成 缩小了通道的实际长度。

公开(公告)号：US07326961B2

公开(公告)日：2008-02-05

申请号：US11107822

申请日：2005-04-18

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

IPC分类号： H01L29/72

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281

摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

摘要翻译： 为了提供与使用激光结晶法的半导体器件的制造方法相关的装置，其能够降低设计变化中涉及的成本，防止晶界在TFT的沟道形成区域中发展，并且防止显着 TFT的迁移率的降低，导通电流的降低以及由于晶界引起的关断电流的增加以及通过使用该制造方法形成的半导体器件。 在根据本发明的半导体器件中，在形成在基膜上的多个TFT中，一些TFT电连接形成逻辑元件。 多个逻辑元件用于形成电路。 基膜具有多个具有矩形或条状的突出部分。 包含在多个TFT中的多个TFT中的岛状半导体膜形成在多个投影部之间，并且通过沿着投影部的纵向扫描的激光而结晶化。