摘要:
A lithographic apparatus includes a magnet being contained in a protective enclosure, the protective enclosure being arranged to protect the magnet from contact with a H2-containing or H-atom containing gas. The enclosure may further contain a hydrogen getter, such as a magnet-surface modifying gas, or a non-hydrogen containing gas. A non-hydrogen containing gas flow may be provided or a non-hydrogen getter gas flow may be provided through at least part of the protective enclosure.
摘要:
An optical assembly is mounted in a projection exposure apparatus (101) for EUV microlithography and includes at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) arranged to be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) configured to clean the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (po) for performing an exposure operation with the projection exposure apparatus (101). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.
摘要:
A lithographic apparatus includes a projection system constructed and arranged to project a beam of radiation onto a target portion of a substrate, an internal sensor having a sensing surface, and a mini-reactor movable with respect to the sensor. The mini-reactor includes an inlet for a hydrogen containing gas, a hydrogen radical generator, and an outlet for a hydrogen radical containing gas. The mini-reactor is constructed and arranged to create a local mini-environment comprising hydrogen radicals to treat the sensing surface.
摘要:
A lithographic apparatus includes an illumination system configured to condition a beam of radiation, and a support structure configured to support a patterning device. The patterning device is configured to impart a pattern to the beam of radiation. The apparatus includes a patterning device cleaning system configured to provide an electrostatic force to contaminant particles that are on the patterning device and that are electrically charged by the beam of radiation, in order to remove the contaminant particles from the patterning device.
摘要:
A radiation system includes a target material supply configured to supply droplets of target material along a trajectory, and a laser system that includes an amplifier and optics. The optics are configured to establish a first beam path which passes through the amplifier and through a first location on the trajectory, and to establish a second beam path which passes through the amplifier and through a second location on the trajectory. The laser system is configured to generate a first pulse of laser radiation when photons emitted from the amplifier are reflected along the first beam path by a droplet of target material at the first location on the trajectory. The laser system is configured to generate a second pulse of laser radiation when photons emitted from the amplifier are reflected along the second beam path by the droplet of target material at the second location on the trajectory.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam, a projection system configured to project the radiation beam onto a substrate, and a filter system for filtering debris particles out of the radiation beam. The filter system includes a plurality of foils for trapping the debris particles, a support for holding the plurality of foils, and a cooling system having a surface that is arranged to be cooled. The cooling system and the support are positioned with respect to each other such that a gap is formed between the surface of the cooling system and the support. The cooling system is further arranged to inject gas into the gap.
摘要:
A transport box for transporting a lithographic patterning device and a lithographic apparatus adapted to cooperate with the transport box are presented. The transport box is provided with a container part having an inner space with a storing position for storing the patterning device and an opening for the transfer of the patterning device. The box also includes a closure part for closing the opening, and a channel system for evacuating and/or feeding gasses from/to the inner space the box.
摘要:
According to an embodiment, a box for transporting a lithographic patterning device is arranged to cooperate with a lithographic apparatus. The transport box may be provided with a container part having an inner space with a storing position for storing the patterning device and an opening for the transfer of the patterning device. Prior to transfer of the patterning device from the inner space to the apparatus, the inner space is pressurized. The box may also comprise a closure part for closing the opening, and/or a channel system for evacuating and/or feeding gasses from/to the inner space of the box. Other embodiments include a lithographic apparatus comprising and/or configured to cooperate with such a box.
摘要:
A measurement system configured to measure wave front aberrations of a projection system, as well as a lithographic apparatus including such a measurement system, is provided wherein the measurement system includes a diffractive element and structure configured to increase the pupil filling of the radiation in the pupil of the projection system, both movable into the projection beam between a radiation system and the projection system, and a sensor module configured to sense radiation that has traversed the projection system to measure wave front aberrations of the projection system.
摘要:
An illumination intensity adjustment device includes a plurality of blades disposed in the projection beam so as to cast half-shadows extending across the illumination field. The blades can be selectively rotated to increase their width perpendicular to the projection beam to control uniformity.