摘要:
A lithographic apparatus includes a magnet being contained in a protective enclosure, the protective enclosure being arranged to protect the magnet from contact with a H2-containing or H-atom containing gas. The enclosure may further contain a hydrogen getter, such as a magnet-surface modifying gas, or a non-hydrogen containing gas. A non-hydrogen containing gas flow may be provided or a non-hydrogen getter gas flow may be provided through at least part of the protective enclosure.
摘要:
A lithographic apparatus includes a magnet being contained in a protective enclosure, the protective enclosure being arranged to protect the magnet from contact with a H2-containing or H-atom containing gas. The enclosure may further contain a hydrogen getter, such as a magnet-surface modifying gas, or a non-hydrogen containing gas. A non-hydrogen containing gas flow may be provided or a non-hydrogen getter gas flow may be provided through at least part of the protective enclosure.
摘要:
A radiation source generates extreme ultraviolet radiation for a lithographic apparatus as a chamber that is provided with a low pressure hydrogen environment. A trace amount of a protective compound, e.g., H2O, H2O2, O2, NH3 or NOx, is provided to the chamber to assist in maintaining a protective oxide film on metal, e.g., titanium, components in the chamber.
摘要翻译:辐射源为光刻设备产生极紫外辐射,作为设置有低压氢环境的室。 向腔室提供痕量的保护性化合物,例如H 2 O,H 2 O 2,O 2,NH 3或NO x,以有助于在室中的金属(例如钛)组分上维持保护性氧化膜。
摘要:
A radiation source generates extreme ultraviolet radiation for a lithographic apparatus as a chamber that is provided with a low pressure hydrogen environment. A trace amount of a protective compound, e.g., H2O, H2O2, O2, NH3 or NOx, is provided to the chamber to assist in maintaining a protective oxide film on metal, e.g., titanium, components in the chamber.
摘要翻译:辐射源为光刻设备产生极紫外辐射,作为设置有低压氢环境的室。 向腔室提供痕量的保护性化合物,例如H 2 O,H 2 O 2,O 2,NH 3或NO x,以有助于在室中的金属(例如钛)组分上维持保护性氧化膜。
摘要:
Embodiments of the invention relate to a system for contactless cleaning of an object surface, a lithographic apparatus including the system, and a method of manufacturing a device. The system may include a He plasma source contained in a chamber and a control unit constructed to modify plasma parameters in use, such as the electron energy distribution of the plasma for causing an increase in formation of He metastables without modifying operational parameters of the plasma source. The control unit may include an electrical biasing unit constructed to apply a positive bias voltage to the object, for attracting free electrons from the plasma. The system may include a supplementary gas source, which may be either pre-mixed with He or be supplied from a further gas source. The supplementary gas may be selected based on a pre-knowledge on a type of particles to be expected on the surface of the object.
摘要:
An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.
摘要:
An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.
摘要:
A lithographic apparatus includes an optical element that includes an oriented carbon nanotube sheet. The optical element has an element thickness in the range of about 20-500 nm and has a transmission for EUV radiation having a wavelength in the range of about 1-20 nm of at least about 20% under perpendicular irradiation with the EUV radiation.
摘要:
A radiation source is configured to produce extreme ultraviolet radiation. The radiation source includes a chamber in which, in use, a plasma is generated, and an evaporation surface configured to evaporate a material formed as a by-product from the plasma and that is emitted to the evaporation surface. A method for removing a by-product material in or from a plasma radiation source of a lithographic apparatus includes evaporating a material which, in use, is emitted to that surface from the plasma.
摘要:
A radiation system includes a target material supply configured to supply droplets of target material along a trajectory, and a laser system that includes an amplifier and optics. The optics are configured to establish a first beam path which passes through the amplifier and through a first location on the trajectory, and to establish a second beam path which passes through the amplifier and through a second location on the trajectory. The laser system is configured to generate a first pulse of laser radiation when photons emitted from the amplifier are reflected along the first beam path by a droplet of target material at the first location on the trajectory. The laser system is configured to generate a second pulse of laser radiation when photons emitted from the amplifier are reflected along the second beam path by the droplet of target material at the second location on the trajectory.