公开(公告)号：US08724976B2

公开(公告)日：2014-05-13

申请号：US13433780

申请日：2012-03-29

申请人： Nir Merry ,  Stephen Moffatt ,  Kailash Patalay ,  David Keith Carlson

发明人： Nir Merry ,  Stephen Moffatt ,  Kailash Patalay ,  David Keith Carlson

IPC分类号： F26B3/30 ,  F26B19/00

CPC分类号： F27B17/0025 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67115 ,  H01L21/67248

摘要： Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

摘要翻译： 本发明的实施例通常考虑用于在处理期间监测和控制衬底的温度的装置和方法。 该装置和方法的一个实施例利用红外相机获得多个区域或基板的整个表面的温度分布，以及系统控制器实时计算和协调用于降低任何可能的温度不均匀性的优化策略 在加工过程中在基板上发现。

公开(公告)号：US20140073145A1

公开(公告)日：2014-03-13

申请号：US13774741

申请日：2013-02-22

申请人： Stephen Moffatt ,  Joseph M. Ranish

发明人： Stephen Moffatt ,  Joseph M. Ranish

IPC分类号： H01L21/324 ,  H01L21/67 ,  B23K26/00 ,  H01L21/268

CPC分类号： H01L21/324 ,  B23K26/0626 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02667 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/67115 ,  H01L29/66575

摘要： The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

摘要翻译： 本发明总体上描述了用于对衬底的期望区域进行退火处理的设备和方法。 在一个实施例中，使用闪光灯或激光装置将电磁能量的脉冲传送到基板。 脉冲可以是约1nsec至约10msec长，并且每个脉冲具有比熔化基底材料所需的能量更少的能量。 脉冲之间的间隔通常足够长以允许由每个脉冲施加的能量完全消散。 因此，每个脉冲完成微退火循环。 脉冲可以一次被输送到整个基板，或者一次被传送到基板的一部分。 另外的实施例提供了用于为辐射组件供电的装置，以及用于检测脉冲在衬底上的影响的装置。

公开(公告)号：US08314369B2

公开(公告)日：2012-11-20

申请号：US12212214

申请日：2008-09-17

申请人： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph Ranish ,  Aaron Hunter

发明人： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph Ranish ,  Aaron Hunter

IPC分类号： H01L21/26 ,  F27B5/14 ,  F27D13/00

CPC分类号： H01L21/67109 ,  H01L21/67115

摘要： A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

摘要翻译： 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度分布。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

公开(公告)号：US08313965B2

公开(公告)日：2012-11-20

申请号：US12953103

申请日：2010-11-23

申请人： Stephen Moffatt

发明人： Stephen Moffatt

IPC分类号： H01L21/268

CPC分类号： H01L21/02686 ,  C30B13/24 ,  C30B29/403 ,  H01L21/02532 ,  H01L21/02568 ,  H01L21/2636 ,  H01L21/268 ,  H01L29/685 ,  H01L31/1872 ,  H01L33/0095 ,  Y02E10/50 ,  Y02P70/521

摘要： A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material.

摘要翻译： 提供了一种在基板上形成晶体半导体层的方法和装置。 通过气相沉积形成半导体层。 进行脉冲激光熔融/再结晶工艺以将半导体层转变成晶体层。 激光或其他电磁辐射脉冲形成脉冲序列并均匀地分布在处理区域上，并且连续的相邻处理区域暴露于脉冲序列以逐渐将沉积的材料转化为结晶材料。

公开(公告)号：US08150242B2

公开(公告)日：2012-04-03

申请号：US12263349

申请日：2008-10-31

申请人： Nir Merry ,  Stephen Moffatt ,  Kailash Patalay ,  David Keith Carlson

发明人： Nir Merry ,  Stephen Moffatt ,  Kailash Patalay ,  David Keith Carlson

IPC分类号： F26B3/30 ,  F26B19/00

CPC分类号： F27B17/0025 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67115 ,  H01L21/67248

摘要： Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

摘要翻译： 本发明的实施例通常考虑用于在处理期间监测和控制衬底的温度的装置和方法。 该装置和方法的一个实施例利用红外相机获得多个区域或基板的整个表面的温度分布，以及系统控制器实时计算和协调用于降低任何可能的温度不均匀性的优化策略 在加工过程中在基板上发现。

公开(公告)号：US20100258758A1

公开(公告)日：2010-10-14

申请号：US12759587

申请日：2010-04-13

申请人： Majeed A. Foad ,  Stephen Moffatt

发明人： Majeed A. Foad ,  Stephen Moffatt

IPC分类号： G03F7/20 ,  G03B27/42 ,  H01F1/00

CPC分类号： G03B27/42 ,  G11B5/8404 ,  H01F10/187 ,  H01F41/34

摘要： A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically active material, and a magnetic pattern is formed in the magnetically active material by treating portions of the material with energy from a laser, e-beam, or focused ion beam. The beam may be divided into a packet of beamlets by passing the beam through a divider, which may be a diffraction grating for laser energy, a thin film single crystal for electrons, or a perforated plate for ions, or the beam may be generated by an array of emitters. The beamlets are then focused to a desired dimension and distribution by optics or electric fields. The resulting beam packet may be shaped further by passing through an aperture of any desired shape. The resulting beam may be applied sequentially to exposure zones to treat an entire substrate or plurality of substrates.

摘要翻译： 提供了一种用于制造磁存储介质的方法和装置。 用磁性活性材料涂覆结构基材，通过用激光，电子束或聚焦离子束的能量处理材料的部分，在磁性活性材料中形成磁性图案。 通过将光束通过分隔器（可以是用于激光能量的衍射光栅），用于电子的薄膜单晶或用于离子的多孔板，可以将光束分成束分束，或者可以通过 一组发射器。 然后通过光学或电场将子束聚焦到期望的尺寸和分布。 所得到的束束可以进一步通过穿过任何所需形状的孔。 所得到的光束可以顺序施加到曝光区域以处理整个基板或多个基板。

公开(公告)号：US20100111511A1

公开(公告)日：2010-05-06

申请号：US12263349

申请日：2008-10-31

申请人： Nir Merry ,  Stephen Moffatt ,  Kailash Patalay ,  David Keith Carlson

发明人： Nir Merry ,  Stephen Moffatt ,  Kailash Patalay ,  David Keith Carlson

IPC分类号： F26B3/30 ,  F27D11/00

CPC分类号： F27B17/0025 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67115 ,  H01L21/67248

摘要： Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

摘要翻译： 本发明的实施例通常考虑用于在处理期间监测和控制衬底的温度的装置和方法。 该装置和方法的一个实施例利用红外相机获得多个区域或基板的整个表面的温度分布，以及系统控制器实时计算和协调用于降低任何可能的温度不均匀性的优化策略 在加工过程中在基板上发现。

公开(公告)号：US20080038900A1

公开(公告)日：2008-02-14

申请号：US11463425

申请日：2006-08-09

申请人： Randhir P S Thakur ,  Stephen Moffatt ,  Per-Ove Hansson ,  Steve Ghanayem

发明人： Randhir P S Thakur ,  Stephen Moffatt ,  Per-Ove Hansson ,  Steve Ghanayem

IPC分类号： H01L21/46

CPC分类号： H01L21/76254 ,  H01J37/32412

摘要： Methods for promoting interface bonding energy utilized in SOI technology are provided. In one embodiment, the method for promoting interface bonding energy includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein, performing a dry cleaning process on a surface of the silicon oxide layer and a surface of the second substrate, and bonding the cleaned silicon oxide surface of the first substrate to the cleaned surface of the second substrate.

摘要翻译： 提供了在SOI技术中使用的促进界面结合能的方法。 在一个实施方案中，用于促进界面结合能的方法包括提供第一衬底和第二衬底，其中第一衬底具有形成在其上的氧化硅层和限定在其中的解理面，在硅的表面上进行干洗处理 氧化物层和第二衬底的表面，并且将清洁的第一衬底的氧化硅表面接合到第二衬底的清洁表面。

公开(公告)号：US20070117414A1

公开(公告)日：2007-05-24

申请号：US11538195

申请日：2006-10-03

申请人： Stephen Moffatt ,  James Santiago

发明人： Stephen Moffatt ,  James Santiago

IPC分类号： C30B15/14 ,  H01L21/00

CPC分类号： C30B25/105 ,  C23C16/0245 ,  C23C16/452 ,  C30B23/025 ,  C30B25/18 ,  C30B35/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67115

摘要： In a first aspect, a first system is provided for semiconductor device manufacturing. The first system includes (1) an epitaxial chamber adapted to form a material layer on a surface of a substrate; and (2) a plasma generator coupled to the epitaxial chamber and adapted to introduce plasma to the epitaxial chamber. Numerous other aspects are provided.

摘要翻译： 在第一方面，提供了一种用于半导体器件制造的第一系统。 第一系统包括（1）适于在衬底的表面上形成材料层的外延室; 和（2）等离子体发生器，其耦合到所述外延室并且适于将等离子体引入所述外延室。 提供了许多其他方面。

公开(公告)号：US20070018270A1

公开(公告)日：2007-01-25

申请号：US11484009

申请日：2006-07-10

申请人： Francisco Leon ,  Lawrence West ,  Yuichi Wada ,  Gregory Wojcik ,  Stephen Moffatt

发明人： Francisco Leon ,  Lawrence West ,  Yuichi Wada ,  Gregory Wojcik ,  Stephen Moffatt

IPC分类号： H01L31/00

CPC分类号： G02B6/12004 ,  G02B2006/12061 ,  H01L31/0232 ,  H01L31/0288 ,  H01L31/105 ,  H01L31/1812 ,  Y02E10/50

摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.

摘要翻译： 一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。