公开(公告)号：US20080293465A1

公开(公告)日：2008-11-27

申请号：US11802863

申请日：2007-05-25

申请人： Hong Chang

发明人： Hong Chang

IPC分类号： A63B24/00 ,  A63B22/00 ,  A63F13/00

CPC分类号： A63F13/212 ,  A63B22/0007 ,  A63B22/0056 ,  A63B22/02 ,  A63B22/0605 ,  A63B24/00 ,  A63B71/0622 ,  A63B2071/0638 ,  A63B2220/13 ,  A63B2220/30 ,  A63B2225/20 ,  A63B2225/50 ,  A63F13/06 ,  A63F13/23 ,  A63F13/245 ,  A63F13/816 ,  A63F2300/1062

摘要： The present invention discloses a video interaction device, which integrates areas of a human upper body with a sport game software to achieve a video interaction via a display interface. The video interaction device of the present invention comprises: at least one foot-sensation member and at least one body motion-driving controller, which are respectively arranged in a foot exercise device and areas of a human upper body (such as a hand, the head, and the waist). Via the foot-sensation members and the body motion-driving controllers, a more precise and delicate whole-body interaction can be thus achieved between a user and a sport game software.

摘要翻译： 本发明公开了一种视频交互装置，其将人体上部的区域与运动游戏软件进行集成，以通过显示界面实现视频交互。 本发明的视频交互装置包括：至少一个足部感觉构件和至少一个身体运动驱动控制器，其分别布置在足部锻炼装置中，并且人体上身（例如手， 头和腰）。 通过脚部感觉部件和身体运动驱动控制器，可以在用户和运动游戏软件之间实现更精确和精细的全身交互。

公开(公告)号：US20060289980A1

公开(公告)日：2006-12-28

申请号：US11165114

申请日：2005-06-22

申请人： Hong Chang ,  Dennis Pai ,  Frank Lung ,  Jay Lin ,  Wilson Huang ,  Men Lung

发明人： Hong Chang ,  Dennis Pai ,  Frank Lung ,  Jay Lin ,  Wilson Huang ,  Men Lung

IPC分类号： H01L23/02 ,  H01L21/00

CPC分类号： H01L24/83 ,  H01L23/3121 ,  H01L23/5388 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83136 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/85 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A structure of stacked memory card, the structure includes a substrate, a lower chip, wires, adhered element, upper chip, and compound resin. The substrate has an upper surface formed with a plurality of first electrodes, and a lower surface. The B-stage glue is coated on the upper surface of the substrate. The lower chip is arranged on the upper surface of the substrate, and is located on the B-stage glue. The plurality of wires are electrically connected the lower chip to the first electrode of the substrate. The adhesive element includes adhesive agent and filling elements is coated on the lower chip. The upper chip is adhered on the lower chip by adhesive element, and is spaced with the lower chip through the filling element, then is electrically connected to the first electrode of the substrate by wires. The compound resin is encapsulated on the upper chip, lower chip, and wires.

摘要翻译： 堆叠式存储卡的结构，该结构包括基板，下部芯片，电线，粘合元件，上部芯片和复合树脂。 基板具有形成有多个第一电极和下表面的上表面。 B层胶被涂覆在基材的上表面上。 下芯片布置在基板的上表面上，位于B级胶上。 多个导线将下芯片电连接到基板的第一电极。 粘合剂元件包括粘合剂，并且填充元件涂覆在下部芯片上。 上芯片通过粘合元件粘附在下芯片上，并通过填充元件与下芯片间隔开，然后通过电线电连接到基板的第一电极。 复合树脂封装在上芯片，下芯片和电线上。

公开(公告)号：US09136377B2

公开(公告)日：2015-09-15

申请号：US13794628

申请日：2013-03-11

申请人： Yeeheng Lee ,  Jongoh Kim ,  Hong Chang

发明人： Yeeheng Lee ,  Jongoh Kim ,  Hong Chang

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L27/088 ,  H01L23/53266 ,  H01L23/535 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/4916 ,  H01L29/66666 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A high density trench-gated MOSFET array and method are disclosed. It comprises semiconductor substrate partitioned into MOSFET array area and gate pickup area; epitaxial region, body region and source region; numerous precisely spaced active nitride-capped trench gate stacks (ANCTGS) embedded till the epitaxial region. Each ANCTGS comprises a stack of polysilicon trench gate with gate oxide shell and silicon nitride cap covering top of polysilicon trench gate and laterally registered to gate oxide shell. The ANCTGS forms, together with the source, body, epitaxial region, a MOSFET device in the MOSFET array area. Over MOSFET array area and gate pickup area, a patterned dielectric region atop the MOSFET array and a patterned metal layer atop the patterned dielectric region. Thus, the patterned metal layer forms, with the MOSFET array and the gate pickup area, self-aligned source and body contacts through the inter-ANCTGS separations.

摘要翻译： 公开了一种高密度沟槽门控MOSFET阵列和方法。 它包括分为MOSFET阵列区域和栅极拾取区域的半导体衬底; 外延区域，体区域和源区域; 许多精确间隔的活性氮化物封闭沟槽栅堆叠（ANCTGS）嵌入到外延区域。 每个ANCTGS包括堆叠的多晶硅沟槽栅极，栅极氧化物层和覆盖多晶硅沟槽栅极顶部的氮化硅盖，并横向配向栅极氧化物壳。 ANCTGS与源极，体，外延区域，MOSFET阵列区域中的MOSFET器件一起形成。 在MOSFET阵列区域和栅极拾取区域上，MOSFET阵列顶部的图案化电介质区域和图案化电介质区域顶部的图案化金属层。 因此，图案化的金属层与MOSFET阵列和栅极拾取区域形成自对准的源极和主体通过ANCTGS间隔而接触。

公开(公告)号：US20150255565A1

公开(公告)日：2015-09-10

申请号：US14197216

申请日：2014-03-05

申请人： Yeeheng Lee ,  Jongoh Kim ,  Hong Chang

发明人： Yeeheng Lee ,  Jongoh Kim ,  Hong Chang

IPC分类号： H01L29/51 ,  H01L29/78 ,  H01L27/088 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423

CPC分类号： H01L29/4236 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66719 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7813

摘要： A semiconductor substrate comprises epitaxial region, body region and source region; an array of interdigitated active nitride-capped trench gate stacks (ANCTGS) and self-guided contact enhancement plugs (SGCEP) disposed above the semiconductor substrate and partially embedded into the source region, the body region and the epitaxial region forming the trench-gated MOSFET array. Each ANCTGS comprises a stack of a polysilicon trench gate embedded in a gate oxide shell and a silicon nitride spacer cap covering the top of the polysilicon trench gate; each SGCEP comprises a lower intimate contact enhancement section (ICES) in accurate registration to its neighboring ANCTGS; an upper distal contact enhancement section (DCES) having a lateral mis-registration (LTMSRG) to the neighboring ANCTGS; and an intervening tapered transitional section (TTS) bridging the ICES and the DCES; a patterned metal layer atop the patterned dielectric region atop the MOSFET array forms self-guided source and body contacts through the SGCEP.

摘要翻译： 半导体衬底包括外延区域，体区域和源极区域; 交错式活性氮化物封闭沟槽栅极叠层阵列（ANCTGS）和自导向接触增强插座（SGCEP），其设置在半导体衬底上并部分地嵌入到源极区域中，体区和形成沟槽栅MOSFET的外延区 数组。 每个ANCTGS包括嵌入在栅极氧化物壳中的多晶硅沟槽栅极的叠层和覆盖多晶硅沟槽栅极的顶部的氮化硅隔离层盖; 每个SGCEP包括一个低密度接触增强部分（ICES），准确地注册到其相邻的ANCTGS; 具有向相邻ANCTGS的横向错配（LTMSRG）的上远端接触增强部分（DCES）; 以及桥接ICES和DCES的中间锥形过渡部分（TTS）; 在MOSFET阵列顶部的图案化电介质区域顶部的图案化金属层通过SGCEP形成自引导源和体接触。

公开(公告)号：US20130265189A1

公开(公告)日：2013-10-10

申请号：US13439113

申请日：2012-04-04

申请人： Hong Chang ,  Bradley Scott Kriel ,  Michael Sean McDaniel

发明人： Hong Chang ,  Bradley Scott Kriel ,  Michael Sean McDaniel

IPC分类号： G01S13/00

CPC分类号： G01S13/87 ,  G01S7/4026 ,  G01S13/42 ,  G01S13/865 ,  G01S13/931 ,  G01S17/87 ,  G01S2013/9332 ,  G01S2013/936 ,  G01S2013/9375 ,  G01S2013/9378 ,  G01S2013/9385

摘要： A system for determining a coverage region of a radar device is disclosed. The system may have one or more processors and a memory. The memory may store instructions that, when executed, enable the one or more processors to receive radar data generated by a radar device and lidar data generated by a lidar device. The radar data may include radar data points representing objects detected by the radar device and the lidar data may include lidar data points representing objects detected by the lidar device. The one or more processors may be further enabled to determine a radar coverage region for the radar device by comparing one or more radar data points to one or more lidar data points, and to generate data used to display a graphical representation of the radar coverage region.

摘要翻译： 公开了一种用于确定雷达装置的覆盖区域的系统。 系统可以具有一个或多个处理器和存储器。 存储器可以存储指令，当执行时，使得一个或多个处理器能够接收由雷达装置产生的雷达数据和由激光雷达装置产生的激光雷达数据。 雷达数据可以包括表示由雷达装置检测到的物体的雷达数据点，并且激光雷达数据可以包括表示由激光雷达装置检测到的物体的激光雷达数据点。 一个或多个处理器还可以进一步使得能够通过将一个或多个雷达数据点与一个或多个激光雷达数据点进行比较来确定雷达装置的雷达覆盖区域，并且生成用于显示雷达覆盖区域的图形表示的数据 。

公开(公告)号：US20090123942A1

公开(公告)日：2009-05-14

申请号：US10563758

申请日：2004-07-09

申请人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark ,  Bryan Moyer

发明人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark ,  Bryan Moyer

IPC分类号： C12Q1/02 ,  G01N33/554 ,  C12N5/06

CPC分类号： G01N33/6872 ,  C12N15/85 ,  C12N2320/10 ,  C12N2503/02 ,  C12Q1/025 ,  G01N33/5044 ,  G01N2500/10

摘要： In one aspect, the present invention relates to a mammalian cell-based high-throughput assay for the profiling and screening of human epithelial sodium channel (hENaC) cloned from a human kidney c-DNA library and is also expressed in other tissues including human taste tissue. The present invention further relates to amphibian oocyte-based medium-throughput electrophysiological assays for identifying human ENaC modulators, preferably ENaC enhancers. Compounds that modulate ENaC function in a cell-based ENaC assay are expected to affect salty taste in humans. The assays described herein have advantages over existing cellular expression systems. In the case of mammalian cells, such assays can be run in standard 96 or 384 well culture plates in high-throughput mode with enhanced assay results being achieved by the use of a compound that inhibits ENaC function, preferably an amiloride derivative such as Phenamil. In the case of the inventive oocyte electrophysiological assays (two-electrode voltage-clamp technique), these assays facilitate the identification of compounds which specifically modulate human ENaC. The assays of the invention provide a robust screen useful to detect compounds that facilitate (enhance) or inhibit hENaC function. Compounds that enhance or block human ENaC channel activity should thereby modulate salty taste in humans.

摘要翻译： 一方面，本发明涉及从人肾C-DNA文库克隆的人上皮钠通道（hENaC）的分析和筛选的基于哺乳动物细胞的高通量测定，并且还在包括人类味道的其它组织中表达 组织。 本发明还涉及用于鉴定人类ENaC调节剂，优选ENaC增强子的两栖动物基于卵母细胞的中等通量电生理测定法。 在基于细胞的ENaC测定中调节ENaC功能的化合物预期会影响人类的咸味。 本文所述的测定法优于现有的细胞表达系统。 在哺乳动物细胞的情况下，这种测定可以在高通量模式的标准96或384孔培养板中进行，通过使用抑制ENaC功能的化合物，优选阿米洛利衍生物，如苯胺，可以实现增强的测定结果。 在本发明的卵母细胞电生理测定（双电极电压钳技术）的情况下，这些测定有助于鉴定特异性调节人类ENaC的化合物。 本发明的测定提供了可用于检测促进（增强）或抑制hENaC功能的化合物的强壮屏幕。 增强或阻断人类ENaC通道活性的化合物应该调节人体的咸味。

公开(公告)号：US6091889A

公开(公告)日：2000-07-18

申请号：US227210

申请日：1999-01-08

申请人： Jenn-Gwo Hwu ,  Kuo-Chung Lee ,  Hong Chang ,  Chien-Lung Chen

发明人： Jenn-Gwo Hwu ,  Kuo-Chung Lee ,  Hong Chang ,  Chien-Lung Chen

IPC分类号： H01L21/00 ,  A21B2/00

CPC分类号： H01L21/67115

摘要： A planar inverted-cone susceptor, preferably made of silicon carbide, inversely disposed between a substrate and a holder of the Rapid Thermal Processor (RTP) so as to perform heat compensation on the substrate. Because the substrate is directly supported by the inverted-cone susceptor, heat stored in the wafer can be rapidly received by the inverted-cone susceptor. Thermal stress and thermal gradient can be effectively decreased in the wafer.

摘要翻译： 平面倒圆锥形基座，优选地由碳化硅制成，反向设置在基板和快速热处理器（RTP）的支架之间，以便在基板上进行热补偿。 由于基板由倒锥形基座直接支撑，所以存储在晶片中的热量可以被反锥形基座快速接收。 在晶片中可以有效降低热应力和热梯度。

公开(公告)号：US11321557B2

公开(公告)日：2022-05-03

申请号：US16548589

申请日：2019-08-22

申请人： Alex C Lee ,  Hong Chang

发明人： Alex C Lee ,  Hong Chang

IPC分类号： G06K9/00 ,  G06K9/62 ,  G06F3/044 ,  G06F3/041

摘要： Described herein are biometric identification systems and methods that use a set of finely spaced analog sensors to generate and record a unique dynamic pressure user profile. The pressure profile is evaluated based on data from a trained model that comprises a number of personal biometric characteristics used to uniquely identify a person, e.g., for authentication purposes, such as granting access to sensitive, confidential information in connection with an electronic commercial transaction, an Internet of Things (IoT) device, an automotive device, an identity and access management (IAM), or a robotic or high functioning touch sensing device.

公开(公告)号：US09459259B2

公开(公告)日：2016-10-04

申请号：US10563758

申请日：2004-07-09

申请人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark ,  Bryan Moyer

发明人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark ,  Bryan Moyer

IPC分类号： G01N33/68 ,  G01N33/50

CPC分类号： G01N33/6872 ,  C12N15/85 ,  C12N2320/10 ,  C12N2503/02 ,  C12Q1/025 ,  G01N33/5044 ,  G01N2500/10

摘要： In one aspect, the present invention relates to a mammalian cell-based high-throughput assay for the profiling and screening of human epithelial sodium channel (hENaC) cloned from a human kidney c-DNA library and is also expressed in other tissues including human taste tissue. The present invention further relates to amphibian oocyte-based medium-throughput electrophysiological assays for identifying human ENaC modulators, preferably ENaC enhancers. Compounds that modulate ENaC function in a cell-based ENaC assay are expected to affect salty taste in humans. The assays described herein have advantages over existing cellular expression systems. In the case of mammalian cells, such assays can be run in standard 96 or 384 well culture plates in high-throughput mode with enhanced assay results being achieved by the use of a compound that inhibits ENaC function, preferably an amiloride derivative such as Phenamil. In the case of the inventive oocyte electrophysiological assays (two-electrode voltage-clamp technique), these assays facilitate the identification of compounds which specifically modulate human ENaC. The assays of the invention provide a robust screen useful to detect compounds that facilitate (enhance) or inhibit hENaC function. Compounds that enhance or block human ENaC channel activity should thereby modulate salty taste in humans.

公开(公告)号：US20070216037A1

公开(公告)日：2007-09-20

申请号：US11378793

申请日：2006-03-16

申请人： Dennis Pai ,  Hong Chang ,  Potter Chien ,  Jay Lin ,  Roy Lin

发明人： Dennis Pai ,  Hong Chang ,  Potter Chien ,  Jay Lin ,  Roy Lin

IPC分类号： H01L23/48

CPC分类号： H01L24/32 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/27013 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83385 ,  H01L2224/83856 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01079 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A memory card structure includes a substrate, B-Stage glue, an adhered layer, a chip, wires, and a compound layer. The substrate has an upper surface, which is formed with first electrodes and golden fingers electrically connected to the first electrodes. The B-Stage glue is coated on the periphery of upper surface of the substrate. The adhered layer is coated on the upper surface of the substrate. The chip is formed with bonding pads, and is adhered on the upper surface of the substrate by the B-Stage glue and the adhered layer. The plurality of wires are electrically connected the bonding pads of the chip to the first electrodes of the substrate. And the compound layer is encapsulated on the chip and the wires.

摘要翻译： 存储卡结构包括基板，B阶胶，附着层，芯片，电线和复合层。 基板具有上表面，其形成有电连接到第一电极的第一电极和金指。 B层胶被涂覆在基材的上表面的周边。 粘附层涂覆在基材的上表面上。 该芯片由接合焊盘形成，并且通过B阶胶和附着层粘合在基板的上表面上。 多个导线将芯片的焊盘电连接到基板的第一电极。 复合层被封装在芯片和导线上。