-
公开(公告)号：US20120280346A1
公开(公告)日：2012-11-08
申请号：US13549792
申请日：2012-07-16
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14632
摘要： The present disclosure provides various embodiments of an image sensor device. An exemplary image sensor device includes an image sensing region disposed in a substrate; a multilayer interconnection structure disposed over the substrate; and a color filter formed in the multilayer interconnection structure and aligned with the image sensing region. The color filter has a length and a width, where the length is greater than the width.
摘要翻译： 本公开提供了图像传感器装置的各种实施例。 示例性图像传感器装置包括设置在基板中的图像感测区域; 布置在所述基板上的多层互连结构; 以及形成在多层互连结构中并与图像感测区域对准的滤色器。 滤色片具有长度和宽度，其长度大于宽度。
-
公开(公告)号：US08283754B2
公开(公告)日：2012-10-09
申请号：US12916789
申请日：2010-11-01
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Hsin-Hui Lee , Wen-De Wang , Shu-Ting Tsai
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Hsin-Hui Lee , Wen-De Wang , Shu-Ting Tsai
IPC分类号： H01L23/544
CPC分类号： H01L23/585 , H01L21/02697 , H01L21/30604 , H01L21/31 , H01L21/31111 , H01L21/32051 , H01L21/6835 , H01L21/76 , H01L21/76816 , H01L21/76877 , H01L23/3171 , H01L23/3192 , H01L23/488 , H01L23/5226 , H01L23/528 , H01L23/562 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/06 , H01L27/14618 , H01L27/14636 , H01L27/1464 , H01L2221/68304 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2224/02166 , H01L2224/03 , H01L2224/03002 , H01L2224/0345 , H01L2224/03452 , H01L2224/0361 , H01L2224/0362 , H01L2224/05025 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/05684 , H01L2224/0603 , H01L2224/06181 , H01L2924/01019 , H01L2924/01068 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A method includes providing a substrate having a seal ring region and a circuit region, forming a seal ring structure over the seal ring region, forming a first frontside passivation layer above the seal ring structure, etching a frontside aperture in the first frontside passivation layer adjacent to an exterior portion of the seal ring structure, forming a frontside metal pad in the frontside aperture to couple the frontside metal pad to the exterior portion of the seal ring structure, forming a first backside passivation layer below the seal ring structure, etching a backside aperture in the first backside passivation layer adjacent to the exterior portion of the seal ring structure, and forming a backside metal pad in the backside aperture to couple the backside metal pad to the exterior portion of the seal ring structure. Semiconductor devices fabricated by such a method are also provided.
摘要翻译： 一种方法包括提供具有密封环区域和电路区域的衬底，在密封环区域上形成密封环结构，在密封环结构上方形成第一前侧钝化层，在相邻的第一侧面钝化层中蚀刻前侧孔 到密封环结构的外部部分，在前侧孔中形成前侧金属垫，以将前侧金属垫连接到密封环结构的外部部分，在密封环结构下方形成第一背侧钝化层，蚀刻背面 邻近密封环结构的外部部分的第一背面钝化层中的孔，以及在背侧孔中形成背面金属垫，以将背面金属垫耦合到密封环结构的外部。 还提供了通过这种方法制造的半导体器件。
-
公开(公告)号：US08222710B2
公开(公告)日：2012-07-17
申请号：US12483485
申请日：2009-06-12
IPC分类号： G02B6/00
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14632
摘要： The present disclosure provides an image sensor semiconductor device. The image sensor semiconductor device includes an image sensor disposed in a semiconductor substrate, an inter-level dielectric (ILD) layer disposed on the semiconductor substrate, inter-metal-dielectric (IMD) layers and multi-layer interconnects (MLI) formed on the ILD layer, and a color filter formed in at least one of the IMD layers and overlying the image sensor.
摘要翻译： 本公开提供了一种图像传感器半导体器件。 图像传感器半导体器件包括设置在半导体衬底中的图像传感器，设置在半导体衬底上的层间电介质层（ILD）层，金属间电介质层（IMD）层和形成在半导体衬底上的多层互连（MLI） ILD层和形成在IMD层中的至少一个并覆盖图像传感器的滤色器。
-
公开(公告)号：US20100244173A1
公开(公告)日：2010-09-30
申请号：US12413752
申请日：2009-03-30
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的装置基板。 该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。 该方法还包括在器件衬底的背面上形成透明层。 该方法还包括在透明层中形成开口，该开口与隔离结构对准。 该方法还包括用不透明材料填充开口。
-
公开(公告)号：US20090315131A1
公开(公告)日：2009-12-24
申请号：US12483485
申请日：2009-06-12
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14632
摘要： The present disclosure provides an image sensor semiconductor device. The image sensor semiconductor device includes an image sensor disposed in a semiconductor substrate, an inter-level dielectric (ILD) layer disposed on the semiconductor substrate, inter-metal-dielectric (IMD) layers and multi-layer interconnects (MLI) formed on the ILD layer, and a color filter formed in at least one of the IMD layers and overlying the image sensor.
摘要翻译： 本公开提供了一种图像传感器半导体器件。 图像传感器半导体器件包括设置在半导体衬底中的图像传感器，设置在半导体衬底上的层间电介质层（ILD）层，金属间电介质层（IMD）层和形成在半导体衬底上的多层互连（MLI） ILD层和形成在IMD层中的至少一个并覆盖图像传感器的滤色器。
-
公开(公告)号：US07588993B2
公开(公告)日：2009-09-15
申请号：US11951916
申请日：2007-12-06
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Shou-Gwo Wuu
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Shou-Gwo Wuu
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , H01L21/71 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An apparatus and manufacturing method thereof, wherein an integrated circuit is located in a first region of a substrate having first and second opposing major surfaces, and wherein an alignment mark is located in a second region of the substrate and extends through the substrate between the first and second surfaces. The alignment mark may protrude from the first and/or second surfaces, and/or may comprise a plurality of substantially similar alignment marks. The second region may interpose the first region and a perimeter of the substrate. The second region may comprise a scribe region.
摘要翻译： 一种装置及其制造方法，其中集成电路位于具有第一和第二相对主表面的基板的第一区域中，并且其中对准标记位于所述基板的第二区域中，并且延伸穿过所述基板在所述第一 和第二表面。 对准标记可以从第一和/或第二表面突出，和/或可以包括多个基本相似的对准标记。 第二区域可以插入衬底的第一区域和周边。 第二区域可以包括划线区域。
-
公开(公告)号：US20080303932A1
公开(公告)日：2008-12-11
申请号：US12120019
申请日：2008-05-13
申请人： Wen-De Wang , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang , Jyh-Ming Hung
发明人： Wen-De Wang , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang , Jyh-Ming Hung
IPC分类号： H04N5/335
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided is an image sensor device including a substrate with a pixel region and a peripheral region. A first isolation structure is formed on the substrate in the pixel region. The first isolation structure includes a trench having a first depth. A second isolation structure is formed on the substrate in the peripheral region. The second isolation structure includes a trench having a second depth. The first depth is greater than the second depth.
摘要翻译： 提供了一种包括具有像素区域和周边区域的基板的图像传感器装置。 在像素区域中的衬底上形成第一隔离结构。 第一隔离结构包括具有第一深度的沟槽。 在周边区域的基板上形成第二隔离结构。 第二隔离结构包括具有第二深度的沟槽。 第一个深度大于第二个深度。
-
公开(公告)号：US09196547B2
公开(公告)日：2015-11-24
申请号：US12751126
申请日：2010-03-31
IPC分类号： H01L27/146 , H01L21/8238 , H01L21/762
CPC分类号： H01L27/1463 , H01L21/76229 , H01L21/823878 , H01L27/14621 , H01L27/1464 , H01L27/14643 , H01L27/14683 , H01L27/14689
摘要： Embodiments of the invention relate to dual shallow trench isolations (STI). In various embodiments related to CMOS Image Sensor (CIS) technologies, the dual STI refers to one STI structure in the pixel region and another STI structure in the periphery or logic region. The depth of each STI structure depends on the need and/or isolation tolerance of devices in each region. In an embodiment, the pixel region uses NMOS devices and the STI in this region is shallower than that of in the periphery region that includes both NMOS and PMOS device having different P- and N-wells and that desire more protective isolation (i.e., deeper STI). Depending on implementations, different numbers of masks (e.g., two, three) are used to generate the dual STI, and are disclosed in various method embodiments.
摘要翻译： 本发明的实施例涉及双重浅沟槽隔离（STI）。 在涉及CMOS图像传感器（CIS）技术的各种实施例中，双STI是指像素区域中的一个STI结构和外围或逻辑区域中的另一个STI结构。 每个STI结构的深度取决于每个区域中器件的需要和/或隔离容差。 在一个实施例中，像素区域使用NMOS器件，并且该区域中的STI比包括具有不同P阱和N阱的NMOS和PMOS器件的外围区域中的STI浅，并且需要更多的保护隔离（即，更深的 STI）。 根据实施方案，使用不同数量的掩模（例如，两个，三个）来产生双STI，并且在各种方法实施例中公开。
-
公开(公告)号：US09165970B2
公开(公告)日：2015-10-20
申请号：US13028471
申请日：2011-02-16
申请人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Hsiao-Hui Tseng
发明人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Hsiao-Hui Tseng
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L23/481 , H01L23/525 , H01L24/83 , H01L27/14623 , H01L27/14632 , H01L27/14636 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H01L27/14683 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes having a front side, a back side, and a sidewall connecting the front and back sides. The image sensor device includes a plurality of radiation-sensing regions disposed in the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers and extends beyond the sidewall of the substrate. The image sensor device includes a bonding pad that is spaced apart from the sidewall of the substrate. The bonding pad is electrically coupled to one of the interconnect layers of the interconnect structure.
摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有连接前侧和后侧的前侧，后侧和侧壁。 图像传感器装置包括设置在基板中的多个辐射感测区域。 每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。 图像传感器装置包括耦合到基板的前侧的互连结构。 互连结构包括多个互连层并且延伸超过衬底的侧壁。 图像传感器装置包括与衬底的侧壁间隔开的接合焊盘。 接合焊盘电连接到互连结构的互连层之一。
-
公开(公告)号：US08941204B2
公开(公告)日：2015-01-27
申请号：US13458827
申请日：2012-04-27
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Shuang-Ji Tsai , Min-Feng Kao
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L27/146 , H01L21/762 , H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463
摘要： A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the opening with a dielectric material to form an air gap embedded in the isolation region of the backside illuminated image sensor wafer.
摘要翻译： 一种用于减少图像传感器中的串扰的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片中形成隔离区域，其中隔离区域包围光有源区域，在隔离区域中形成从后侧开口 并且用电介质材料覆盖开口的上端，以形成嵌入在背面照射的图像传感器晶片的隔离区域中的气隙。
-
-
-
-
-
-
-
-
-
搜索结果
260 条记录 (耗时 0.058 秒)
