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公开(公告)号：US20160005595A1
公开(公告)日：2016-01-07
申请号：US14849154
申请日：2015-09-09
Inventor： Chen-Yu Liu , Ching-Yu Chang
IPC: H01L21/027 , H01L21/308 , H01L21/02
CPC classification number: H01L21/0276 , C08F220/18 , C08F220/22 , C11D11/0047 , G03F7/0751 , G03F7/091 , G03F7/11 , G03F7/40 , G03F7/405 , G03F7/425 , H01L21/02118 , H01L21/3081 , H01L21/3086 , H01L21/31133
Abstract: A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating additive in order to form a floating additive region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating additive may comprise an additive group which will decompose along with a fluorine unit bonded to the additive group which will decompose. Additionally, adhesion between the middle layer and the photoresist may be increased by applying an adhesion promotion layer using either a deposition process or phase separation, or a cross-linking may be performed between the middle layer and the photoresist.
Abstract translation: 提供了一种用于抗反射层的系统和方法。 在一个实施例中，抗反射层包括浮动添加剂，以在抗反射层分散之后沿着抗反射层的顶表面形成浮动添加剂区域。 浮动添加剂可以包含与分解的添加剂基团结合的氟单元分解的添加剂组。 此外，可以通过使用沉积工艺或相分离施加粘合促进层来增加中间层和光致抗蚀剂之间的粘合性，或者可以在中间层和光致抗蚀剂之间进行交联。
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72.发明申请公开(公告)号：US20150187564A1
公开(公告)日：2015-07-02
申请号：US14657954
申请日：2015-03-13
Inventor： Ching-Yu Chang , Kuei-Liang Lu , Ming-Feng Shieh
IPC: H01L21/027 , H01L21/311 , H01L21/02 , H01L21/033
CPC classification number: H01L21/0271 , G03F7/11 , G03F7/167 , H01L21/02118 , H01L21/02282 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31133 , H01L21/6708
Abstract: A method of semiconductor device fabrication including placing a substrate having a first and second features disposed thereon in a vaporizing spray deposition system. An atomizing spray head of the vaporizing spray deposition system is used to deposit a conformal polymer layer on the first and second features. The first feature having the layer of the polymer disposed thereon and having a first width. A spray trim process is performed on the first and second features having the polymer layer disposed thereon using the atomizing spray head.
Abstract translation: 一种半导体器件制造方法，包括将其上设置有第一和第二特征的衬底放置在蒸发喷涂沉积系统中。 蒸发喷雾沉积系统的雾化喷头用于在第一和第二特征上沉积共形聚合物层。 第一特征具有设置在其上并具有第一宽度的聚合物层。 使用雾化喷头对其上设置有聚合物层的第一和第二特征进行喷涂修整工艺。
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公开(公告)号：US20150132702A1
公开(公告)日：2015-05-14
申请号：US14599048
申请日：2015-01-16
Inventor： Ching-Yu Chang , Ming-Feng Shieh , Wen-Hung Tseng
IPC: G03F7/004 , G03F7/30 , H01L21/027
CPC classification number: G03F7/0045 , G03F7/004 , G03F7/0046 , G03F7/0392 , G03F7/30 , G03F7/32 , H01L21/0274
Abstract: A method for fabricating a semiconductor product includes applying a photo-resist layer to a substrate, the photo-resist layer including a higher acid concentration at an upper portion of the photo-resist layer than at a lower portion of the photo-resist layer. The method also includes exposing the photo-resist layer to a light source through a mask including a feature, the photo-resist layer including a floating, diffusing acid that will diffuse into a region of the photo-resist layer affected by the feature while not diffusing into a feature formed by the mask.
Abstract translation: 一种制造半导体产品的方法包括将光致抗蚀剂层施加到基底上，所述光致抗蚀剂层在光致抗蚀剂层的上部比在光致抗蚀剂层的下部具有更高的酸浓度。 该方法还包括通过包括特征的掩模将光致抗蚀剂层暴露于光源，该光致抗蚀剂层包括将扩散到受特征影响的光致抗蚀剂层的区域中的浮动扩散酸，而不是 扩散到由掩模形成的特征中。
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公开(公告)号：US09012132B2
公开(公告)日：2015-04-21
申请号：US13732944
申请日：2013-01-02
Inventor： Ching-Yu Chang
CPC classification number: G03F7/20 , H01L21/02109 , H01L21/02118 , H01L21/02282 , H01L21/0276
Abstract: Provided is a method including providing a substrate and forming a bottom anti-reflective coating (BARC) on the substrate. The BARC includes a first portion overlying a second portion, which has a different composition than the first portion. The different composition may provide a different dissolution property of the BARC in a developer. A photoresist layer is formed on the first portion of the BARC. The photoresist layer is then irradiated and developed. The developing includes using a developer to remove a region of the photoresist layer and a region of the first and second portions of the BARC.
Abstract translation: 提供了一种方法，包括提供衬底并在衬底上形成底部抗反射涂层（BARC）。 BARC包括覆盖第二部分的第一部分，其具有与第一部分不同的组成。 不同的组合物可以提供BARC在显影剂中的不同溶解性质。 在BARC的第一部分上形成光致抗蚀剂层。 然后照射和显影光致抗蚀剂层。 显影剂包括使用显影剂去除光致抗蚀剂层的区域和BARC的第一和第二部分的区域。
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公开(公告)号：US08936903B2
公开(公告)日：2015-01-20
申请号：US13791992
申请日：2013-03-09
Inventor： Ching-Yu Chang , Ming-Feng Shieh , Wen-Hung Tseng
CPC classification number: G03F7/0045 , G03F7/004 , G03F7/0046 , G03F7/0392 , G03F7/30 , G03F7/32 , H01L21/0274
Abstract: A method for fabricating a semiconductor product includes applying a photo-resist layer to a substrate, the photo-resist layer including a higher acid concentration at an upper portion of the photo-resist layer than at a lower portion of the photo-resist layer. The method also includes exposing the photo-resist layer to a light source through a mask including a feature, the photo-resist layer including a floating, diffusing acid that will diffuse into a region of the photo-resist layer affected by the feature while not diffusing into a feature formed by the mask.
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Patent Agency Ranking
公开(公告)号：US08932799B2
公开(公告)日：2015-01-13
申请号：US13829301
申请日：2013-03-14
Inventor： Chen-Hau Wu , Ching-Yu Chang
IPC: G03C1/00 , G03F7/00 , H01L21/00 , H01L21/027 , G03F7/038 , H01L21/308
CPC classification number: G03F7/038 , G03F7/0382 , H01L21/0274 , H01L21/3081 , H01L21/31144 , H01L21/32139
Abstract: A system and method for photoresists is provided. In an embodiment a cross-linking or coupling reagent is included within a photoresist composition. The cross-linking or coupling reagent will react with the polymer resin within the photoresist composition to cross-link or couple the polymers together, resulting in a polymer with a larger molecular weight. This larger molecular weight will cause the dissolution rate of the photoresist to decrease, leading to a better depth of focus for the line.
Abstract translation: 提供了一种用于光致抗蚀剂的系统和方法。 在一个实施方案中，交联或偶联试剂包括在光致抗蚀剂组合物内。 交联或偶联试剂将与光致抗蚀剂组合物内的聚合物树脂反应，将聚合物交联或连接在一起，产生分子量较大的聚合物。 这种较大的分子量将导致光致抗蚀剂的溶解速率降低，导致该线更好的聚焦深度。
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公开(公告)号：US20140272716A1
公开(公告)日：2014-09-18
申请号：US13906787
申请日：2013-05-31
Inventor： Wei-Han Lai , Ching-Yu Chang
CPC classification number: G03F7/38 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/26 , G03F7/40
Abstract: A system and method for photoresists is provided. In an embodiment the photoresist is exposed in a photoresist track system and developed in an offline developing system. After the photoresist is exposed, the photoresist may be idled for a time period prior to being developed in the offline developing system.
Abstract translation: 提供了一种用于光致抗蚀剂的系统和方法。 在一个实施例中，光致抗蚀剂在光致抗蚀剂轨道系统中暴露并在离线显影系统中显影。 在曝光光致抗蚀剂之后，在离线显影系统中显影之前，光刻胶可能会闲置一段时间。
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公开(公告)号：US08802354B2
公开(公告)日：2014-08-12
申请号：US13857453
申请日：2013-04-05
Inventor： Ching-Yu Chang
CPC classification number: G03F7/2041 , G03F7/004 , G03F7/0045 , G03F7/0392
Abstract: A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.
Abstract translation: 一种光致抗蚀剂材料，其具有响应于与酸的反应而使其溶解于碱溶液的聚合物。 该材料包括响应于辐射能分解形成酸的光酸产生剂（PAG）和能够中和酸并具有降低迁移率的猝灭剂。 因此，光致抗蚀剂材料可以防止浸没式光刻中的水痕缺陷。
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公开(公告)号：US20130330671A1
公开(公告)日：2013-12-12
申请号：US13971650
申请日：2013-08-20
Inventor： Ching-Yu Chang , Chih-Cheng Chiu
IPC: G03F7/20
CPC classification number: G03F7/2041 , G03F7/0382 , G03F7/0392 , G03F7/168
Abstract: Lithography methods on a semiconductor substrate are described. The methods include coating a resist layer on the substrate, wherein the resist layer comprises a resist polymer configured to turn soluble to a base solution in response to reaction with an acid, and a switchable polymer that includes a base soluble polymer having a carboxylic acid, hydroxyl, lactone, or anhydride functional group, performing a pre-exposure bake on the resist layer, exposing the resist-coated substrate, and developing the exposed substrate with a developing solution.
Abstract translation: 描述半导体衬底上的平版印刷方法。 所述方法包括在基底上涂覆抗蚀剂层，其中抗蚀剂层包含抗反应聚合物，其被配置为响应于与酸的反应而转化为碱溶液，并且可切换聚合物包括具有羧酸的碱溶性聚合物， 羟基，内酯或酸酐官能团，在抗蚀剂层上进行预曝光烘烤，曝光抗蚀剂涂布的基底，并用显影液显影曝光的基底。
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公开(公告)号：US12222653B2
公开(公告)日：2025-02-11
申请号：US17320754
申请日：2021-05-14
Inventor： Ming-Hui Weng , An-Ren Zi , Ching-Yu Chang , Chin-Hsiang Lin , Chen-Yu Liu
IPC: G03F7/30 , G03F7/32 , G03F7/40 , H01L21/02 , H01L21/033 , H01L21/311 , H01L21/3115
Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer, the resist layer includes an inorganic material. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes forming a modified layer over the resist layer, and the modified layer includes an auxiliary. The method includes performing an exposure process on the modified layer and the resist layer, and removing a portion of the modified layer and a first portion of the resist layer by a first developer. The first developer includes a ketone-based solvent having a substituted or unsubstituted C6-C7 cyclic ketone, an ester-based solvent having a formula (b), or a combination thereof.
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