Semiconductor device and process for manufacturing the same
    71.
    发明授权
    Semiconductor device and process for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号:US06876045B2

    公开(公告)日:2005-04-05

    申请号:US10626642

    申请日:2003-07-25

    申请人: Takeshi Takagi

    发明人: Takeshi Takagi

    摘要: This specification relates to a process for manufacturing a semiconductor device, comprising the steps of: forming a lower gate electrode film on a semiconductor substrate 10 via a gate insulating film 11; forming an upper gate electrode film on the lower gate electrode film, the upper gate electrode film being made of a material having a lower oxidation rate than that of the lower gate electrode film; forming a gate electrode 12 by patterning the upper gate electrode film and the lower gate electrode film, the gate electrode 12 comprising a lower gate electrode element 12a and an upper gate electrode element 12b; forming source/drain regions 15 by introducing an impurity into the semiconductor substrate 10; and forming oxide film sidewalls 13 by oxidizing the side faces of the lower gate electrode element 12a and the upper gate electrode element 12b, the thickness of the oxide film sidewalls 13 in the gate length direction being larger at the sides of the lower gate electrode element 12a than at the sides of the upper gate electrode element 12b.

    摘要翻译: 本说明书涉及半导体器件的制造方法,其特征在于,包括以下步骤:通过栅极绝缘膜11在半导体衬底10上形成下部栅极电极膜; 在下栅电极膜上形成上栅极电极膜,上栅极电极膜由比下栅极电极膜氧化率低的材料制成; 通过图案化上栅极电极膜和下栅极电极膜形成栅电极12,栅电极12包括下栅电极元件12a和上栅极电极元件12b; 通过将杂质引入到半导体衬底10中来形成源/漏区15; 以及通过氧化下部栅极电极元件12a和上部栅极电极元件12b的侧面而形成氧化膜侧壁13,栅极长度方向上的氧化膜侧壁13的厚度在下部栅极电极元件的侧面较大 12a比在上栅极电极元件12b的侧面处。

    Semiconductor integrated circuit and fabrication method thereof
    72.
    发明申请
    Semiconductor integrated circuit and fabrication method thereof 有权
    半导体集成电路及其制造方法

    公开(公告)号:US20050040436A1

    公开(公告)日:2005-02-24

    申请号:US10866093

    申请日:2004-06-14

    IPC分类号: H01L21/8238 H01L27/10

    CPC分类号: H01L21/823807

    摘要: A semiconductor integrated circuit fabrication method according to this invention includes: a step of forming a pair of first device forming regions and a pair of second device forming regions in a surface layer portion of a semiconductor substrate by surrounding each of the regions by device isolation; a step of forming a first oxide film covering the surface of the semiconductor substrate after the preceding step; a step of removing an intended portion of the first oxide film to expose the pair of second device forming regions; a step of forming a pair of heterojunction structures, by selective epitaxial growth, on the pair of second device forming regions thus exposed; a step of forming a second oxide film covering the surface of the substrate after the preceding step; and a step of forming a pair of gate electrodes above each of the pair of first device forming regions and the pair of second device forming regions, whereby a normal complementary MOS transistor and a heterojunction complementary MOS transistor are eventually formed in the pair of first device forming regions and the pair of second device forming regions, respectively.

    摘要翻译: 根据本发明的半导体集成电路制造方法包括:通过器件隔离来围绕每个区域来在半导体衬底的表面层部分中形成一对第一器件形成区域和一对第二器件形成区域的步骤; 在前述步骤之后形成覆盖半导体衬底的表面的第一氧化物膜的步骤; 去除所述第一氧化物膜的预期部分以暴露所述一对第二器件形成区域的步骤; 通过选择性外延生长形成一对异质结结构在由此露出的一对第二器件形成区上的步骤; 在上述步骤之后形成覆盖基板表面的第二氧化膜的步骤; 以及在所述一对第一器件形成区域和所述一对第二器件形成区域中的每一个上形成一对栅电极的步骤,由此在所述一对第一器件形成区域中最终形成正常互补MOS晶体管和异质结互补MOS晶体管 形成区域和一对第二装置形成区域。

    Method for semiconductor integrated circuit fabrication and a semiconductor integrated circuit
    73.
    发明申请
    Method for semiconductor integrated circuit fabrication and a semiconductor integrated circuit 失效
    半导体集成电路制造方法和半导体集成电路

    公开(公告)号:US20050006709A1

    公开(公告)日:2005-01-13

    申请号:US10910573

    申请日:2004-08-04

    摘要: A semiconductor integrated circuit comprising a plurality of bipolar transistors that are produced by forming, in a plurality of transistor-producing regions (A1 and A2), a first conductive type emitter layer (6) on the front surface side of a second conductive type base layer (4) that is formed on the surface side of a first conductive collector layer (2) and contains germanium, the first conductive type emitter layer (6) being formed from a semiconductor material having a band gap larger than the base layer (4); wherein the concentrations of impurities contained in the emitter layers (6, 61) vary among the plurality of transistor-producing regions (A1, A2), and the germanium concentrations differ in the base-emitter junction interfaces of at least two of the transistor-producing regions (A1, A2), such that the ON-state voltages required for turning the plurality of bipolar transistors into an ON state differ from each other. This semiconductor integrated circuit makes it possible to reduce power consumption while maintaining the excellent performance of a bipolar transistor.

    摘要翻译: 一种半导体集成电路,包括多个双极晶体管,其通过在多个晶体管产生区域(A1和A2)中形成在第二导电类型基底的前表面侧上的第一导电类型发射极层(6) 层(4),其形成在第一导电集电体层(2)的表面侧并且包含锗,所述第一导电型发射极层(6)由具有比所述基极层(4)的带隙大的半导体材料形成 ); 其中,所述发射极层(6,61)中所含的杂质浓度在所述多个晶体管产生区域(A1,A2)中变化,并且所述晶体管 - 半导体区域中的至少两个的基极 - 发射极结界面的锗浓度不同, 产生区域(A1,A2),使得将多个双极晶体管转换为导通状态所需的导通状态电压彼此不同。 该半导体集成电路使得可以在保持双极晶体管的优异性能的同时降低功耗。

    DTMOS device having low threshold voltage
    74.
    发明授权
    DTMOS device having low threshold voltage 有权
    DTMOS器件具有低阈值电压

    公开(公告)号:US06753555B2

    公开(公告)日:2004-06-22

    申请号:US10268905

    申请日:2002-10-11

    IPC分类号: H01L310328

    摘要: A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. Furthermore, the HDTMOS includes an n-type high concentration Si body region, an n− Si region, a SiGe channel region containing n-type low concentration impurities, an n-type low concentration Si cap layer, and a contact which is a conductor member for electrically connecting the gate electrode and the Si body region. The present invention extends the operation range while keeping the threshold voltage small by using, for the channel layer, a material having a smaller potential at the band edge where carriers travel than that of a material constituting the body region.

    摘要翻译: HDTMOS包括Si衬底,掩埋氧化物膜和半导体层。 半导体层包括上硅膜,外延生长的Si缓冲层,外延生长的SiGe膜和外延生长的Si膜。 此外,HDTMOS包括n型高浓度Si体区域,n

    Semiconductor device
    75.
    发明授权

    公开(公告)号:US06512252B1

    公开(公告)日:2003-01-28

    申请号:US09712223

    申请日:2000-11-15

    IPC分类号: H01L31072

    摘要: A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. Furthermore, the HDTMOS includes an n-type high concentration Si body region, an n− Si region, a SiGe channel region containing n-type low concentration impurities, an n-type low concentration Si cap layer, and a contact which is a conductor member for electrically connecting the gate electrode and the Si body region. The present invention extends the operation range while keeping the threshold voltage small by using, for the channel layer, a material having a smaller potential at the band edge where carriers travel than that of a material constituting the body region.

    Coating of carboxyl-containing acrylic copolymer and epoxy-containing
acrylic copolymer
    76.
    发明授权
    Coating of carboxyl-containing acrylic copolymer and epoxy-containing acrylic copolymer 失效
    含羧基丙烯酸共聚物和含环氧丙烯酸共聚物的涂层

    公开(公告)号:US5932658A

    公开(公告)日:1999-08-03

    申请号:US667934

    申请日:1996-06-24

    摘要: The present invention provides a curable resin composition having good curability and storage stability, which provides a cured film having excellent weather resistance, acid resistance and mar resistance. The curable resin composition comprises:(a) 20 to 80% by weight of a polycarboxylic acid having an acid value of 25 to 300 mg KOH/g based on solid and a number average molecular weight of 500 to 20000; and(b) 20 to 80% by weight of a polyepoxide having an epoxy equivalent of 100 to 800 and a number average molecular weight of 500 to 20000, prepared by copolymerizing: (1) 10 to 60% by weight of a long-chain epoxy monomer; and (2) 40 to 90% by weight of an ethylenically unsaturated monomer having no epoxy group. The present invention also provides a process for forming a cured film using the resin composition.

    摘要翻译: 本发明提供了具有良好的固化性和保存稳定性的固化性树脂组合物,其提供了耐候性,耐酸性和耐擦伤性优异的固化膜。 可固化树脂组合物包含:(a)20至80重量%的基于固体的酸值为25至300mg KOH / g并且数均分子量为500至20000的多元羧酸; 和(b)20〜80重量%的环氧当量为100〜800,数均分子量为500〜20000的聚环氧化物,通过以下方法制备:(1)10〜60重量%的长链 环氧单体; 和(2)40〜90重量%的不具有环氧基的烯属不饱和单体。 本发明还提供了使用该树脂组合物形成固化膜的方法。

    Heat-curable, water-dispersible resin composition, production thereof,
water-based paint composition, method of coating and coated article
    77.
    发明授权
    Heat-curable, water-dispersible resin composition, production thereof, water-based paint composition, method of coating and coated article 失效
    可热固化的水分散性树脂组合物,其制备方法,水性涂料组合物,涂布方法和涂布制品

    公开(公告)号:US5747558A

    公开(公告)日:1998-05-05

    申请号:US777510

    申请日:1996-12-30

    摘要: A heat-curable, water-dispersible resin composition comprising 50 to 90% by weight of a film-forming polymer (A) obtained by copolymerizing an ethylenic monomer having a saturated C.sub.6 to C.sub.18 hydrocarbon group, a hydroxy-containing ethylenic monomer, an acidic group-containing ethylenic monomer and another ethylenic monomer, and 50 to 10% by weight of a hydroxy-terminated polyester resin (B), said resin (B) being grafted on said polymer (A) by transesterification, and at least part of the acidic groups in said polymer (A) being neutralized with a base (C); a method of producing said resin composition; a water-based paint composition comprising said resin composition and a curing agent; and a two-coat one-bake coating method which uses said paint composition as a base coat. This invention provides a water-based paint composition which shows good workability in a broad humidity condition range, and excellent in storage stability, paint film appearance and performance characteristics.

    摘要翻译: 一种可热固化的水分散性树脂组合物,其包含50-90重量%的通过共聚具有饱和C6至C18烃基的烯属单体,含羟基的乙烯性单体,酸性 含有乙烯基的单体和另一种乙烯性单体,和50〜10重量%的羟基封端的聚酯树脂(B),所述树脂(B)通过酯交换接枝在所述聚合物(A)上,并且至少部分 所述聚合物(A)中的酸性基团用碱(C)中和; 一种生产所述树脂组合物的方法; 包含所述树脂组合物和固化剂的水性涂料组合物; 和使用所述涂料组合物作为底涂层的双层单烘烤涂布法。 本发明提供了一种水溶性涂料组合物,其在宽湿度条件范围内表现出良好的加工性,并且储存稳定性,漆膜外观和性能特性优异。

    Wall hanging holder for electric shaver
    79.
    发明授权
    Wall hanging holder for electric shaver 失效
    电动剃须刀墙挂架

    公开(公告)号:US4275862A

    公开(公告)日:1981-06-30

    申请号:US55072

    申请日:1979-07-05

    CPC分类号: A45D27/29

    摘要: A foldable wall hanging holder for electric shaver comprises an integral plate of a synthetic resin which is foldably or bendably divided into fixing, holding and bracing plate parts respectively by means of first and second hinge parts. The respective plate parts are bent at the hinge parts to form a right-angled triangle, with the holding plate part braced by the bracing plate part at right angles with respect to the fixing plate part to be fixed to a wall surface or the like, for holding the shaver in a hole of the holding part and in an aperture of the bracing plate part aligned with the hole.

    摘要翻译: 一种用于电动剃须刀的可折叠壁挂架包括合成树脂的整体板,其通过第一和第二铰链部分分别可折叠地或可弯曲地分成固定,保持和支撑板部件。 相应的板部分在铰链部分处弯曲以形成直角三角形,其中支撑板部分由相对于固定板部分成直角的支撑板部分支撑以固定到壁表面等, 用于将剃须刀保持在保持部分的孔中并且在与孔对准的支撑板部分的孔中。