摘要:
This specification relates to a process for manufacturing a semiconductor device, comprising the steps of: forming a lower gate electrode film on a semiconductor substrate 10 via a gate insulating film 11; forming an upper gate electrode film on the lower gate electrode film, the upper gate electrode film being made of a material having a lower oxidation rate than that of the lower gate electrode film; forming a gate electrode 12 by patterning the upper gate electrode film and the lower gate electrode film, the gate electrode 12 comprising a lower gate electrode element 12a and an upper gate electrode element 12b; forming source/drain regions 15 by introducing an impurity into the semiconductor substrate 10; and forming oxide film sidewalls 13 by oxidizing the side faces of the lower gate electrode element 12a and the upper gate electrode element 12b, the thickness of the oxide film sidewalls 13 in the gate length direction being larger at the sides of the lower gate electrode element 12a than at the sides of the upper gate electrode element 12b.
摘要:
A semiconductor integrated circuit fabrication method according to this invention includes: a step of forming a pair of first device forming regions and a pair of second device forming regions in a surface layer portion of a semiconductor substrate by surrounding each of the regions by device isolation; a step of forming a first oxide film covering the surface of the semiconductor substrate after the preceding step; a step of removing an intended portion of the first oxide film to expose the pair of second device forming regions; a step of forming a pair of heterojunction structures, by selective epitaxial growth, on the pair of second device forming regions thus exposed; a step of forming a second oxide film covering the surface of the substrate after the preceding step; and a step of forming a pair of gate electrodes above each of the pair of first device forming regions and the pair of second device forming regions, whereby a normal complementary MOS transistor and a heterojunction complementary MOS transistor are eventually formed in the pair of first device forming regions and the pair of second device forming regions, respectively.
摘要:
A semiconductor integrated circuit comprising a plurality of bipolar transistors that are produced by forming, in a plurality of transistor-producing regions (A1 and A2), a first conductive type emitter layer (6) on the front surface side of a second conductive type base layer (4) that is formed on the surface side of a first conductive collector layer (2) and contains germanium, the first conductive type emitter layer (6) being formed from a semiconductor material having a band gap larger than the base layer (4); wherein the concentrations of impurities contained in the emitter layers (6, 61) vary among the plurality of transistor-producing regions (A1, A2), and the germanium concentrations differ in the base-emitter junction interfaces of at least two of the transistor-producing regions (A1, A2), such that the ON-state voltages required for turning the plurality of bipolar transistors into an ON state differ from each other. This semiconductor integrated circuit makes it possible to reduce power consumption while maintaining the excellent performance of a bipolar transistor.
摘要:
A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. Furthermore, the HDTMOS includes an n-type high concentration Si body region, an n− Si region, a SiGe channel region containing n-type low concentration impurities, an n-type low concentration Si cap layer, and a contact which is a conductor member for electrically connecting the gate electrode and the Si body region. The present invention extends the operation range while keeping the threshold voltage small by using, for the channel layer, a material having a smaller potential at the band edge where carriers travel than that of a material constituting the body region.
摘要:
A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. Furthermore, the HDTMOS includes an n-type high concentration Si body region, an n− Si region, a SiGe channel region containing n-type low concentration impurities, an n-type low concentration Si cap layer, and a contact which is a conductor member for electrically connecting the gate electrode and the Si body region. The present invention extends the operation range while keeping the threshold voltage small by using, for the channel layer, a material having a smaller potential at the band edge where carriers travel than that of a material constituting the body region.
摘要:
The present invention provides a curable resin composition having good curability and storage stability, which provides a cured film having excellent weather resistance, acid resistance and mar resistance. The curable resin composition comprises:(a) 20 to 80% by weight of a polycarboxylic acid having an acid value of 25 to 300 mg KOH/g based on solid and a number average molecular weight of 500 to 20000; and(b) 20 to 80% by weight of a polyepoxide having an epoxy equivalent of 100 to 800 and a number average molecular weight of 500 to 20000, prepared by copolymerizing: (1) 10 to 60% by weight of a long-chain epoxy monomer; and (2) 40 to 90% by weight of an ethylenically unsaturated monomer having no epoxy group. The present invention also provides a process for forming a cured film using the resin composition.
摘要:
A heat-curable, water-dispersible resin composition comprising 50 to 90% by weight of a film-forming polymer (A) obtained by copolymerizing an ethylenic monomer having a saturated C.sub.6 to C.sub.18 hydrocarbon group, a hydroxy-containing ethylenic monomer, an acidic group-containing ethylenic monomer and another ethylenic monomer, and 50 to 10% by weight of a hydroxy-terminated polyester resin (B), said resin (B) being grafted on said polymer (A) by transesterification, and at least part of the acidic groups in said polymer (A) being neutralized with a base (C); a method of producing said resin composition; a water-based paint composition comprising said resin composition and a curing agent; and a two-coat one-bake coating method which uses said paint composition as a base coat. This invention provides a water-based paint composition which shows good workability in a broad humidity condition range, and excellent in storage stability, paint film appearance and performance characteristics.
摘要:
Disclosed is an apparatus utilizing a light emitting semiconductor device which has a pumped region and an unpumped absorber region and in which an active layer has a quantum well structure. In this light emitting semiconductor device, driving current/light output characteristics have dependence on the pulse width of a driving current. A logic unit or a noise reducing apparatus is realized utilizing this property. Furthermore, in the above described light emitting semiconductor device, the central wavelength of emitted light has dependence on a driving current or dependence on driving time. A light beam scanner can be realized utilizing this property.
摘要:
A foldable wall hanging holder for electric shaver comprises an integral plate of a synthetic resin which is foldably or bendably divided into fixing, holding and bracing plate parts respectively by means of first and second hinge parts. The respective plate parts are bent at the hinge parts to form a right-angled triangle, with the holding plate part braced by the bracing plate part at right angles with respect to the fixing plate part to be fixed to a wall surface or the like, for holding the shaver in a hole of the holding part and in an aperture of the bracing plate part aligned with the hole.