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    Method for forming a semiconductor structure
    71.
    发明授权
    Method for forming a semiconductor structure 有权
    半导体结构的形成方法

    公开(公告)号：US09147612B2

    公开(公告)日：2015-09-29

    申请号：US14088445

    申请日：2013-11-25

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Po-Cheng Huang ,  I-Ming Tseng ,  Yu-Ting Li ,  Chun-Hsiung Wang ,  Wu-Sian Sie ,  Yi-Liang Liu ,  Chia-Lin Hsu ,  Po-Chao Tsao ,  Chien-Ting Lin ,  Shih-Fang Tzou

    IPC: H01L21/338 ,  H01L21/8234 ,  H01L21/265

    CPC classification number: H01L21/823431 ,  H01L21/265 ,  H01L21/3086 ,  H01L29/6681

    Abstract: The present invention provides a manufacturing method for forming a semiconductor structure, in which first, a substrate is provided, a hard mask is disposed on the substrate, the hard mask is then patterned to form a plurality of fin hard masks and a plurality of dummy fin hard masks, afterwards, a pattern transferring process is performed, to transfer the patterns of the fin hard masks and the fin hard masks into the substrate, so as to form a plurality of fin groups and a plurality of dummy fins. Each dummy fin is disposed on the end side of one fin group, and a fin cut process is performed, to remove each dummy fin.

    Abstract translation: 本发明提供一种用于形成半导体结构的制造方法，其中首先设置基板，在基板上设置硬掩模，然后将硬掩模图案化以形成多个散热片硬掩模和多个虚拟 翅片硬掩模，然后进行图案转印处理，将翅片硬掩模和翅片硬掩模的图案转移到基板中，以形成多个翅片组和多个虚拟翅片。 每个假翅片设置在一个翅片组的端侧，并进行翅片切割处理，以去除每个假翅片。

    METHOD OF GAP FILLING
    72.
    发明申请
    METHOD OF GAP FILLING 审中-公开
    缝隙填充方法

    公开(公告)号：US20150064929A1

    公开(公告)日：2015-03-05

    申请号：US14018447

    申请日：2013-09-05

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： I-Ming Tseng ,  Shih-Hung Tsai ,  Rai-Min Huang ,  Yu-Ting Lin ,  Chien-Ting Lin ,  Shih-Fang Tzou

    IPC: H01L21/02

    CPC classification number: H01L29/66795 ,  H01L21/02164 ,  H01L21/02233 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/76224

    Abstract: A method of gap filling includes providing a substrate having a plurality of gaps formed therein. Then, an in-situ steam generation oxidation is performed to form an oxide liner on the substrate. The oxide liner is formed to cover surfaces of the gaps. Subsequently, a high aspect ratio process is performed to form an oxide protecting layer on the oxide liner. After forming the oxide protecting layer, a flowable chemical vapor deposition is performed to form an oxide filling on the oxide protecting layer. More important, the gaps are filled up with the oxide filling layer.

    Abstract translation: 间隙填充的方法包括提供其中形成有多个间隙的基板。 然后，进行原位蒸汽发生氧化，以在衬底上形成氧化物衬垫。 形成氧化物衬垫以覆盖间隙的表面。 随后，进行高纵横比处理以在氧化物衬垫上形成氧化物保护层。 在形成氧化物保护层之后，进行可流动的化学气相沉积以在氧化物保护层上形成填充氧化物。 更重要的是，间隙填充有氧化物填充层。

    SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
    73.
    发明申请
    SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF 审中-公开
    半导体结构及其制造方法

    公开(公告)号：US20150014808A1

    公开(公告)日：2015-01-15

    申请号：US13939204

    申请日：2013-07-11

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Shih-Hung Tsai ,  Rai-Min Huang ,  I-Ming Tseng ,  Yu-Ting Lin ,  Chien-Ting Lin

    IPC: H01L21/762 ,  H01L21/311 ,  H01L29/06

    CPC classification number: H01L21/76224 ,  H01L21/02236 ,  H01L21/3065 ,  H01L21/3086 ,  H01L29/66818 ,  H01L29/7853

    Abstract: A fabrication method for a semiconductor structure at least includes the following steps. First, a pattern mask with a predetermined layout pattern is formed on a substrate. The layout pattern is then transferred to the underneath substrate so as to form at least a fin-shaped structure in the substrate. Subsequently, a shallow trench isolation structure is formed around the fin-shaped structure. Afterwards, a steam oxidation process is carried out to oxidize the fin-shaped structure protruding from the shallow trench isolation and to form an oxide layer on its surface. Finally, the oxide layer is removed completely.

    Abstract translation: 半导体结构的制造方法至少包括以下步骤。 首先，在基板上形成具有预定布局图案的图案掩模。 然后将布局图案转移到基底下方，以在基底中形成至少一个鳍状结构。 随后，在鳍状结构周围形成浅沟槽隔离结构。 之后，进行蒸汽氧化处理，使从浅沟槽隔离突出的鳍状结构氧化，并在其表面形成氧化物层。 最后，氧化层被完全去除。

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