摘要:
The present technology is related to an image processing device and image processing method that enables the generating of 3D images that can be viewed safely and comfortably.The communication unit acquires encoded data of 3D images, and the 3D image bitstream that includes at least the disparity information representing the disparity of these 3D images. The CPU specifies the playback timing of the 3D images. Based on the disparity information, the CPU determines the re-encoding section, which is the section of a front stream and back stream where adjustment of the disparity is needed, so that the difference between the disparity of 3D images of which the timings of playback are consecutive is at or below a predetermined threshold. The editing unit adjusts the disparity of the image data in the re-encoding section. The present technology is applicable, for example, to an editing device that edits 3D images.
摘要:
The present technology is related to an image processing device and image processing method that enables the generating of 3D images that can be viewed safely and comfortably.The communication unit acquires encoded data of 3D images, and the 3D image bitstream that includes at least the disparity information representing the disparity of these 3D images. The CPU specifies the playback timing of the 3D images. Based on the disparity information, the CPU determines the re-encoding section, which is the section of a front stream and back stream where adjustment of the disparity is needed, so that the difference between the disparity of 3D images of which the timings of playback are consecutive is at or below a predetermined threshold. The editing unit adjusts the disparity of the image data in the re-encoding section. The present technology is applicable, for example, to an editing device that edits 3D images.
摘要:
A silicone microemulsion composition obtained by microemulsifying a carboxy-modified organopolysiloxane, and having a lower surface tension than conventional microemulsions. The composition includes 100 parts by mass of a specific carboxy-modified organopolysiloxane (A), 25 to 75 parts by mass of a specific polyether-modified organopolysiloxane (B), 0.1 to 10 parts by mass of an anionic surfactant, and 20 to 6,000 parts by mass of water, wherein the average particle size of the emulsion particles is not more than 100 nm.
摘要:
A high-density magnetic recording medium uses a nonmetallic substrate, while still providing high in-plane magnetic anisotropy and remanent coercivity. Such a medium can be formed by depositing a seed layer on a textured surface of the nonmetallic substrate in a gas mixture containing oxygen or nitrogen and an inert gas, while controlling the oxygen concentration or nitrogen concentration, and subsequently exposing the surface of the seed layer to oxygen or nitrogen.
摘要:
A heterojunction field effect transistor has a buffer layer, a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode to be in contact with a substrate. The buffer layer has at least one GaN layer. The channel layer has a composition of InzGa1−zN (0≦z
摘要翻译:异质结场效应晶体管具有与衬底接触的缓冲层,沟道层,栅极绝缘层,源极,漏极和栅电极。 缓冲层具有至少一个GaN层。 沟道层具有InzGa1-zN(0 <= z <1)的组成,栅极绝缘层是InAlGaN层。 源极和漏极与沟道层欧姆接触,并且栅电极和栅绝缘层彼此肖特基接触。
摘要:
There is provided a negative differential resistance amplifier comprising a negative differential resistance transistor having negative input conductance by utilizing resonant tunneling effect. The transistor is electrically connected to a signal source circuit in cascade, and the following relation is established in the negative differential resistance amplifier:0 0) indicates a conductance measured when viewed from an interface between the negative differential resistance transistor and the signal source circuit to the signal source circuit, -gi (gi>0) indicates a conductance of the negative differential resistance transistor, and G (G
摘要:
A method and apparatus for encoding a picture with improved prediction accuracy in predicting the basic quantization step. The apparatus for encoding a picture includes a picture data storage unit, a picture information evaluating unit, an inter-picture correlation detection unit, an orthogonal transform unit for orthogonally transforming the picture data for generating orthogonal transform coefficients, a quantization unit for quantizing the orthogonal transform coefficients produced by the orthogonal transform unit at a pre-set quantization step, an adaptive compression method selection unit and a quantization step control unit. The information quantity is evaluated from stored picture data of plural pictures, and the inter-picture correlation is detected. A picture data compression method is adaptively selected based upon the evaluated value of the information quantity and the inter-picture correlation information. The basic quantization step is predicted from the evaluated value and a pre-set compressed data quantity obtained on compressing one-picture picture data by the selected compression method and the evaluated value.
摘要:
An InAlAs/InGaAs type heterojunction FET is provided which can reduce the source and drain contact resistance through the InAlAs layer without lowering the sheet carrier concentration so as to form an ohmic contact without alloying. A laminated structure of an undoped InAlAs buffer layer, an undoped InGaAs channel layer which accumulates two-dimensional electron gas, InAlAs electron supply layers containing an n-type layer, an undoped InAlAs Schottky layer, a first cap layer of n-type InAlAs, a second cap layer, and a third cap layer of n-type InGaAs are sequentially formed on a semi-insulating InP substrate. When undoped InGaAs or n-type IN(AlGa)As is employed as the second cap layer, the potential barrier at the interfaces between the cap layers are reduced so that the contact resistivity between the cap layer and the channel layer can be reduced to as low as 10.sup.-7 .OMEGA.cm.sup.2.
摘要:
A flip-flop circuit which makes use of a resonant-tunneling effect is improved in that it is simplified in structure and hence in designing of a component and operates at a room temperature. The flip-flop circuit includes a bipolar transistor and a resonant-tunneling diode. The collector terminal of the bipolar transistor is connected to a voltage source, and the base terminal is connected to an input terminal of the flip-flop circuit by way of a resistor. One of a pair of terminals of the resonant-tunneling diode is grounded while the other terminal is connected to the emitter terminal of the bipolar transistor with a junction therebetween connected to an output terminal of the flip-flop circuit. The bipolar transistor is set such that, when the value of a current flowing into the base terminal has a high level, the value of a current flowing through the collector terminal is higher than a peak current value of the resonant-tunneling diode, but when the value of the current flowing into the base terminal has a low level, the value of the current flowing through the collector terminal is lower than a valley current value of the resonant-tunneling diode.
摘要:
An heterojunction field effect transistor comprises a channel forming layer associated with a carrier supplying layer, and an electrostatic lens is provided across the channel forming layer with a focusing gate electrode appropriately biased, wherein an abrupt potential discontinuity is produced in the bottom edge of the conduction band of the channel forming layer with an emitter gate electrode provided between a source electrode and the focusing gate electrode so that hot electrons produced by the abrupt potential discontinuity have substantially uniform longitudinal electron energies allowing the hot electrons to be focused upon a focal point of the electrostatic lens.