Image processing device and image processing method
    71.
    发明授权
    Image processing device and image processing method 有权
    图像处理装置及图像处理方法

    公开(公告)号:US08842972B2

    公开(公告)日:2014-09-23

    申请号:US13818793

    申请日:2011-08-25

    摘要: The present technology is related to an image processing device and image processing method that enables the generating of 3D images that can be viewed safely and comfortably.The communication unit acquires encoded data of 3D images, and the 3D image bitstream that includes at least the disparity information representing the disparity of these 3D images. The CPU specifies the playback timing of the 3D images. Based on the disparity information, the CPU determines the re-encoding section, which is the section of a front stream and back stream where adjustment of the disparity is needed, so that the difference between the disparity of 3D images of which the timings of playback are consecutive is at or below a predetermined threshold. The editing unit adjusts the disparity of the image data in the re-encoding section. The present technology is applicable, for example, to an editing device that edits 3D images.

    摘要翻译: 本技术涉及能够生成可以安全且舒适地观看的3D图像的图像处理装置和图像处理方法。 通信单元获取3D图像的编码数据,以及至少包括表示这些3D图像的视差的视差信息的3D图像比特流。 CPU指定3D图像的播放时间。 基于视差信息,CPU确定重新编码部分,其是需要调整差异的前向流和后向流的部分,使得重放的定时的3D图像的视差之间的差异 是连续的等于或低于预定阈值。 编辑单元调整再编码部分中的图像数据的不一致性。 本技术例如适用于编辑3D图像的编辑装置。

    IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD
    72.
    发明申请
    IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD 有权
    图像处理装置和图像处理方法

    公开(公告)号:US20130148944A1

    公开(公告)日:2013-06-13

    申请号:US13818793

    申请日:2011-08-25

    IPC分类号: H04N13/00

    摘要: The present technology is related to an image processing device and image processing method that enables the generating of 3D images that can be viewed safely and comfortably.The communication unit acquires encoded data of 3D images, and the 3D image bitstream that includes at least the disparity information representing the disparity of these 3D images. The CPU specifies the playback timing of the 3D images. Based on the disparity information, the CPU determines the re-encoding section, which is the section of a front stream and back stream where adjustment of the disparity is needed, so that the difference between the disparity of 3D images of which the timings of playback are consecutive is at or below a predetermined threshold. The editing unit adjusts the disparity of the image data in the re-encoding section. The present technology is applicable, for example, to an editing device that edits 3D images.

    摘要翻译: 本技术涉及能够生成可以安全且舒适地观看的3D图像的图像处理装置和图像处理方法。 通信单元获取3D图像的编码数据,以及至少包括表示这些3D图像的视差的视差信息的3D图像比特流。 CPU指定3D图像的播放时间。 基于视差信息,CPU确定重新编码部分,其是需要调整差异的前向流和后向流的部分,使得重放的定时的3D图像的视差之间的差异 是连续的等于或低于预定阈值。 编辑单元调整再编码部分中的图像数据的不一致性。 本技术例如适用于编辑3D图像的编辑装置。

    Silicone microemulsion composition
    73.
    发明授权
    Silicone microemulsion composition 有权
    硅胶微乳液组合物

    公开(公告)号:US08329816B2

    公开(公告)日:2012-12-11

    申请号:US13448651

    申请日:2012-04-17

    IPC分类号: C08K3/00

    摘要: A silicone microemulsion composition obtained by microemulsifying a carboxy-modified organopolysiloxane, and having a lower surface tension than conventional microemulsions. The composition includes 100 parts by mass of a specific carboxy-modified organopolysiloxane (A), 25 to 75 parts by mass of a specific polyether-modified organopolysiloxane (B), 0.1 to 10 parts by mass of an anionic surfactant, and 20 to 6,000 parts by mass of water, wherein the average particle size of the emulsion particles is not more than 100 nm.

    摘要翻译: 通过微乳化羧基改性的有机聚硅氧烷并且具有比常规微乳液更低的表面张力获得的硅氧烷微乳液组合物。 该组合物包含100质量份特定的羧基改性的有机聚硅氧烷(A),25〜75质量份的特定的聚醚改性的有机聚硅氧烷(B),0.1〜10质量份的阴离子表面活性剂和20〜6,000 质量份的水,乳液颗粒的平均粒径不大于100nm。

    Magnetic recording medium and manufacturing method thereof
    74.
    发明申请
    Magnetic recording medium and manufacturing method thereof 审中-公开
    磁记录介质及其制造方法

    公开(公告)号:US20060115686A1

    公开(公告)日:2006-06-01

    申请号:US11333381

    申请日:2006-01-17

    IPC分类号: G11B5/66 C23C14/00

    CPC分类号: G11B5/8404 G11B5/7379

    摘要: A high-density magnetic recording medium uses a nonmetallic substrate, while still providing high in-plane magnetic anisotropy and remanent coercivity. Such a medium can be formed by depositing a seed layer on a textured surface of the nonmetallic substrate in a gas mixture containing oxygen or nitrogen and an inert gas, while controlling the oxygen concentration or nitrogen concentration, and subsequently exposing the surface of the seed layer to oxygen or nitrogen.

    摘要翻译: 高密度磁记录介质使用非金属基底,同时仍具有高的面内磁各向异性和残余矫顽力。 可以通过在包含氧或氮气和惰性气体的气体混合物中将种子层沉积在非金属基底的纹理表面上,同时控制氧浓度或氮浓度,并随后暴露种子层的表面来形成这种介质 到氧气或氮气。

    Heterojunction field effect transistor
    75.
    发明授权
    Heterojunction field effect transistor 有权
    异质结场效应晶体管

    公开(公告)号:US06429467B1

    公开(公告)日:2002-08-06

    申请号:US09492611

    申请日:2000-01-27

    申请人: Yuji Ando

    发明人: Yuji Ando

    IPC分类号: H01L29778

    摘要: A heterojunction field effect transistor has a buffer layer, a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode to be in contact with a substrate. The buffer layer has at least one GaN layer. The channel layer has a composition of InzGa1−zN (0≦z

    摘要翻译: 异质结场效应晶体管具有与衬底接触的缓冲层,沟道层,栅极绝缘层,源极,漏极和栅电极。 缓冲层具有至少一个GaN层。 沟道层具有InzGa1-zN(0 <= z <1)的组成,栅极绝缘层是InAlGaN层。 源极和漏极与沟道层欧姆接触,并且栅电极和栅绝缘层彼此肖特基接触。

    Negative differential resistance amplifier
    76.
    发明授权
    Negative differential resistance amplifier 失效
    负差分电阻放大器

    公开(公告)号:US5920231A

    公开(公告)日:1999-07-06

    申请号:US907949

    申请日:1997-08-11

    申请人: Yuji Ando

    发明人: Yuji Ando

    摘要: There is provided a negative differential resistance amplifier comprising a negative differential resistance transistor having negative input conductance by utilizing resonant tunneling effect. The transistor is electrically connected to a signal source circuit in cascade, and the following relation is established in the negative differential resistance amplifier:0 0) indicates a conductance measured when viewed from an interface between the negative differential resistance transistor and the signal source circuit to the signal source circuit, -gi (gi>0) indicates a conductance of the negative differential resistance transistor, and G (G

    摘要翻译: 提供了一种负差分电阻放大器,其包括通过利用谐振隧穿效应的具有负输入电导的负差分电阻晶体管。 晶体管串联电连接到信号源电路,并且在负差分电阻放大器中建立以下关系:0 0)表示当从 负差分电阻晶体管和信号源电路到信号源电路,-gi(gi> 0)表示负差分电阻晶体管的电导,G(G

    Heterojunction field effect transistor with non-alloy ohmic contact
electrodes
    78.
    发明授权
    Heterojunction field effect transistor with non-alloy ohmic contact electrodes 失效
    具有非合金欧姆接触电极的异质结场效应晶体管

    公开(公告)号:US5621228A

    公开(公告)日:1997-04-15

    申请号:US515530

    申请日:1995-08-15

    申请人: Yuji Ando

    发明人: Yuji Ando

    CPC分类号: H01L29/0891 H01L29/7783

    摘要: An InAlAs/InGaAs type heterojunction FET is provided which can reduce the source and drain contact resistance through the InAlAs layer without lowering the sheet carrier concentration so as to form an ohmic contact without alloying. A laminated structure of an undoped InAlAs buffer layer, an undoped InGaAs channel layer which accumulates two-dimensional electron gas, InAlAs electron supply layers containing an n-type layer, an undoped InAlAs Schottky layer, a first cap layer of n-type InAlAs, a second cap layer, and a third cap layer of n-type InGaAs are sequentially formed on a semi-insulating InP substrate. When undoped InGaAs or n-type IN(AlGa)As is employed as the second cap layer, the potential barrier at the interfaces between the cap layers are reduced so that the contact resistivity between the cap layer and the channel layer can be reduced to as low as 10.sup.-7 .OMEGA.cm.sup.2.

    摘要翻译: 提供了InAlAs / InGaAs型异质结FET,其可以降低通过InAlAs层的源极和漏极接触电阻,而不降低片载体浓度,从而在没有合金化的情况下形成欧姆接触。 未掺杂的InAlAs缓冲层,积存二维电子气的未掺杂的InGaAs沟道层,含有n型层的InAlAs电子供给层,未掺杂的InAlAs肖特基层,n型InAlAs的第一盖层, n型InGaAs的第二覆盖层和第三覆盖层依次形成在半绝缘InP衬底上。 当未掺杂的InGaAs或n型IN(AlGa)As用作第二盖层时,在盖层之间的界面处的势垒减小,使得盖层和沟道层之间的接触电阻可以减小为 低至10-7 OMEGA cm2。

    Flip-flop circuit with resonant tunneling diode
    79.
    发明授权
    Flip-flop circuit with resonant tunneling diode 失效
    具有谐振隧道二极管的触发电路

    公开(公告)号:US5543748A

    公开(公告)日:1996-08-06

    申请号:US413766

    申请日:1995-03-30

    申请人: Yuji Ando

    发明人: Yuji Ando

    IPC分类号: H03K3/315 H03K3/36 H01J19/82

    CPC分类号: B82Y10/00 H03K3/36

    摘要: A flip-flop circuit which makes use of a resonant-tunneling effect is improved in that it is simplified in structure and hence in designing of a component and operates at a room temperature. The flip-flop circuit includes a bipolar transistor and a resonant-tunneling diode. The collector terminal of the bipolar transistor is connected to a voltage source, and the base terminal is connected to an input terminal of the flip-flop circuit by way of a resistor. One of a pair of terminals of the resonant-tunneling diode is grounded while the other terminal is connected to the emitter terminal of the bipolar transistor with a junction therebetween connected to an output terminal of the flip-flop circuit. The bipolar transistor is set such that, when the value of a current flowing into the base terminal has a high level, the value of a current flowing through the collector terminal is higher than a peak current value of the resonant-tunneling diode, but when the value of the current flowing into the base terminal has a low level, the value of the current flowing through the collector terminal is lower than a valley current value of the resonant-tunneling diode.

    摘要翻译: 利用谐振隧道效应的触发器电路得到改进,其结构简单,因此在部件的设计中被简化并在室温下工作。 触发器电路包括双极晶体管和谐振隧道二极管。 双极晶体管的集电极连接到电压源,基极通过电阻连接到触发器电路的输入端。 谐振隧道二极管的一对端子中的一个接地,而另一个端子连接到双极晶体管的发射极端子,其两端连接到触发器电路的输出端子。 双极型晶体管的设定使得当流入基极的电流值为高电平时,流过集电极端子的电流值高于谐振隧道二极管的峰值电流值,但是当 流入基极的电流值为低电平,流过集电极端子的电流值低于谐振隧道二极管的谷值电流值。

    Heterojunction field effect transistor equipped with electrostatic lens
for improving ballistic propagation
    80.
    发明授权
    Heterojunction field effect transistor equipped with electrostatic lens for improving ballistic propagation 失效
    配有静电透镜的异质结场效应晶体管用于改善弹道传播

    公开(公告)号:US5192986A

    公开(公告)日:1993-03-09

    申请号:US757297

    申请日:1991-09-10

    申请人: Yuji Ando

    发明人: Yuji Ando

    CPC分类号: H01L29/772 H01L29/42316

    摘要: An heterojunction field effect transistor comprises a channel forming layer associated with a carrier supplying layer, and an electrostatic lens is provided across the channel forming layer with a focusing gate electrode appropriately biased, wherein an abrupt potential discontinuity is produced in the bottom edge of the conduction band of the channel forming layer with an emitter gate electrode provided between a source electrode and the focusing gate electrode so that hot electrons produced by the abrupt potential discontinuity have substantially uniform longitudinal electron energies allowing the hot electrons to be focused upon a focal point of the electrostatic lens.

    摘要翻译: 异质结场效应晶体管包括与载流子供应层相关联的沟道形成层,并且在沟道形成层两侧提供静电透镜,聚焦栅电极被适当地偏置,其中在导电的底部边缘产生突然的电势不连续 沟道形成层的带宽与设置在源电极和聚焦栅电极之间的发射极电极,使得由突发电位不连续产生的热电子具有基本上均匀的纵向电子能,允许热电子聚焦在聚焦栅极的焦点上 静电透镜。