公开(公告)号：US07993948B2

公开(公告)日：2011-08-09

申请号：US12539275

申请日：2009-08-11

申请人： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L21/00

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00

摘要： A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by annealing the palladium film in the oxygen ambient; and (iv) forming a palladium oxide film directly in contact with the semiconductor layer.

摘要翻译： 一种通过（i）在p型半导体层上沉积钯膜来制造电极的方法; （ii）将氧气引入到钯膜上以提供氧气氛; （iii）通过在氧环境中退火钯膜来氧化与半导体层相邻的钯膜; 和（iv）直接与半导体层接触形成氧化钯膜。

公开(公告)号：US07773648B2

公开(公告)日：2010-08-10

申请号：US11365531

申请日：2006-03-02

申请人： Koichi Tachibana ,  Shinji Saito ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Shinji Saito ,  Shinya Nunoue

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3216

摘要： Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.

摘要翻译： 这里公开了高可靠性半导体器件。 激光二极管包括：基板; 包括设置在基板上的第一导电型包覆层的多层膜，设置在第一导电型包覆层上的第一导电型引导层，设置在第一导电型引导层上的有源层，第二导电型引导层 设置在所述有源层上，以及设置在所述第二导电型导向层上的第二导电型包覆层，所述层由氮化物系III-V族化合物半导体构成。 由氮化物制成的第一保护层，设置在激光二极管的发光表面上; 以及设置在第一保护层上并由与第一保护层的折射率不同的折射率的氮化物制成的第二保护层。

公开(公告)号：US07763907B2

公开(公告)日：2010-07-27

申请号：US11850404

申请日：2007-09-05

申请人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

发明人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

IPC分类号： H01L33/22 ,  H01L33/14 ,  H01L33/38

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

公开(公告)号：US07592641B2

公开(公告)日：2009-09-22

申请号：US10574850

申请日：2006-02-21

申请人： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L29/24

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00

摘要： A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).

摘要翻译： 半导体器件包括p型氮化物半导体层（14）; 和包括与氮化物半导体层（14）的表面连接的氧化钯膜（30）的p侧电极（18）。

公开(公告)号：US06252894B1

公开(公告)日：2001-06-26

申请号：US09263213

申请日：1999-03-05

申请人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

发明人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/205 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/2231 ,  H01S2301/18

摘要： A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.

摘要翻译： 半导体激光器由氮化镓系化合物半导体形成，具有包含保持在p型和n型AlGaN覆盖层之间的MQW（多量子阱）有源层的双异质结构。 双异质结构保持在p型和n型接触层之间。 在至少一个接触层和InAlGaN光学引导模式控制中形成具有大于具有与接触层相同的导电类型并且与接触层相邻的覆盖层的光吸收系数的InGaN光吸收层 在光吸收层的外部形成折射率小于包层的层（小折射率层）。

公开(公告)号：US20100178721A1

公开(公告)日：2010-07-15

申请号：US12539275

申请日：2009-08-11

申请人： Shinji SAITO ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Shinji SAITO ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L31/0256 ,  H01L21/316

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00

摘要： A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).

摘要翻译： 半导体器件包括p型氮化物半导体层（14）; 和包括与氮化物半导体层（14）的表面连接的氧化钯膜（30）的p侧电极（18）。

公开(公告)号：US06303405B1

公开(公告)日：2001-10-16

申请号：US09404727

申请日：1999-09-24

申请人： Hiroaki Yoshida ,  Kazuhiko Itaya ,  Shinji Saito ,  Johji Nishio ,  Shinya Nunoue

发明人： Hiroaki Yoshida ,  Kazuhiko Itaya ,  Shinji Saito ,  Johji Nishio ,  Shinya Nunoue

IPC分类号： H01L2100

CPC分类号： H01L21/76251 ,  H01L33/007 ,  H01L33/0079 ,  H01L2221/68318

摘要： A semiconductor light emitting element of nitride compound semiconductors excellent in cleavability, heat radiation and resistance to leakage is made by epitaxially grow a nitride compound semiconductor layers on a substrate of sapphire, for example, and thereafter separating the substrate. For separating the substrate, there are a technique using a abruption mechanism susceptible to a stress such as a “lift-off layer” and a recesses on a substrate. A technique using laser light to cause a local dense heat stress at the abruption mechanism is effective. A nitride compound semiconductor obtained by separating the substrate may be used as a new substrate to epitaxially grow high-quality nitride compound semiconductors thereon.

摘要翻译： 例如，通过在蓝宝石衬底上外延生长氮化物半导体层，然后分离衬底，进行切割性，散热性和耐漏电性优异的氮化物半导体发光元件。 为了分离衬底，存在使用易受诸如“剥离层”和衬底上的凹陷等应力敏感的剥离机构的技术。 使用激光在剥离机制下引起局部致密热应激的技术是有效的。 通过分离衬底获得的氮化物化合物半导体可以用作新的衬底，以在其上外延生长高质量的氮化物半导体。

公开(公告)号：US07795059B2

公开(公告)日：2010-09-14

申请号：US12098309

申请日：2008-04-04

申请人： Shinji Saito ,  Shinya Nunoue

发明人： Shinji Saito ,  Shinya Nunoue

IPC分类号： H01L21/00

CPC分类号： H01L33/385 ,  H01L33/20 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.

摘要翻译： 半导体发光元件具有层叠部，该层叠部具有由半导体构成的有源层，第一和第二包层各自设置为夹持有源层并由半导体构成，一对第一高反射层为 被配置成沿着与所述层叠部的层叠方向正交的第一方向夹持所述有源层，以及低反射层和第二高反射层，各自设置成沿与所述层叠方向正交的第二方向夹持所述有源层 并跨越第一个方向。

公开(公告)号：US20100187497A1

公开(公告)日：2010-07-29

申请号：US12716668

申请日：2010-03-03

申请人： Hajime NAGO ,  Koichi Tachibana ,  Shinji Saito ,  Yoshiyuki Harada ,  Shinya Nunoue

发明人： Hajime NAGO ,  Koichi Tachibana ,  Shinji Saito ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A semiconductor device includes an underlying layer, and a light emitting layer which is formed on the underlying layer and in which a barrier layer made of InAlGaN and a quantum well layer made of InGaN are alternately stacked.

摘要翻译： 半导体器件包括下层，并且形成在下层上并且其中由InAlGaN制成的势垒层和由InGaN制成的量子阱层的发光层交替堆叠。

公开(公告)号：US20080194050A1

公开(公告)日：2008-08-14

申请号：US12098309

申请日：2008-04-04

申请人： Shinji SAITO ,  Shinya Nunoue

发明人： Shinji SAITO ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/385 ,  H01L33/20 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.

摘要翻译： 半导体发光元件具有层叠部，该层叠部具有由半导体构成的有源层，第一和第二包层各自设置为夹持有源层并由半导体构成，一对第一高反射层为 被配置成沿着与所述层叠部的层叠方向正交的第一方向夹持所述有源层，以及低反射层和第二高反射层，各自设置成沿与所述层叠方向正交的第二方向夹持所述有源层 并跨越第一个方向。