公开(公告)号：US06274025B1

公开(公告)日：2001-08-14

申请号：US09332433

申请日：1999-06-14

申请人： Jei-Wei Chang ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Kochan Ju ,  Mao-Min Chen

发明人： Jei-Wei Chang ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Kochan Ju ,  Mao-Min Chen

IPC分类号： C25D502

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996

摘要： A method to form a passivation layer over a MR Sensor so that the passivation layer defines the track width. The passivation layer is formed simultaneously with the development of the lift off structure in a novel developing/oxidizing solution that oxidizes the MR sensor and develops the photoresist. The passivation layer is an electrical insulator that prevents sensor current from shunting through the overspray of the leads and a heat conductor to allow MR heat to dissipate through the overspray. The method comprises: spinning-on and printing a lift-off photoresist structure over the MR sensor. Next, the lift-off photoresist structure is developed. The MR sensor is anodized in a developing/oxidizing solution to: (1) remove portions of the lower photoresist and (2) to form a (e.g., thin NiFeO) passivation layer on the MR layer at least partially under the upper photoresist layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure. Then, a lead layer is deposited over the passivation layer and MR sensor. The lift-off structure is removed.

摘要翻译： 在MR传感器上形成钝化层的方法，使得钝化层限定轨道宽度。 钝化层与氧化MR传感器并显影光致抗蚀剂的新型显影/氧化溶液中的剥离结构的发展同时形成。 钝化层是电绝缘体，其防止传感器电流通过引线的过度喷射和热导体分流，以允许MR热量通过过喷器消散。 该方法包括：在MR传感器上旋转并打印剥离光致抗蚀剂结构。 接下来，开发剥离光致抗蚀剂结构。 将MR传感器在显影/氧化溶液中进行阳极氧化，以：（1）去除下部光致抗蚀剂的部分，和（2）在MR层上至少部分地在上部光致抗蚀剂层下形成（例如，薄的NiFeO）钝化层。 钝化层被蚀刻以除去未被剥离结构覆盖的钝化层。 然后，在钝化层和MR传感器上沉积引线层。 剥离结构被去除。

公开(公告)号：US06007731A

公开(公告)日：1999-12-28

申请号：US46008

申请日：1998-03-23

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Kochan Ju

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Kochan Ju

IPC分类号： G01R33/09 ,  G11B5/39 ,  B44C1/22 ,  C23F1/00

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3967

摘要： A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is formed over the substrate a dielectric layer which has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. The is also formed over the substrate a magnetoresistive (MR) layer in contact with the first surface of the dielectric layer. Similarly, there is also formed over the substrate a soft adjacent layer (SAL) in contact with the second surface of the dielectric layer, where the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the dielectric layer are planar and preferably at least substantially co-extensive. The invention contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed employing the method of the invention.

摘要翻译： 软相邻层（SAL）磁阻（MR）传感器元件和用于制造软相邻层（SAL）磁阻（MR）传感器元件的方法。 为了实践该方法，首先提供了一种衬底。 在衬底上形成介电层，其具有电介质层的第一表面和与电介质层的第一表面相对的电介质层的第二表面。 还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。 类似地，还在衬底上形成与电介质层的第二表面接触的软相邻层（SAL），其中磁阻（MR）层，软相邻层（SAL）和电介质层是平面的并且优选地 至少基本上共同广泛。 本发明考虑使用本发明的方法形成的软相邻层（SAL）磁阻（MR）传感器元件。

公开(公告)号：US5783460A

公开(公告)日：1998-07-21

申请号：US738208

申请日：1996-10-25

申请人： Cherng-Chyi Han ,  Mao-Min Chen

发明人： Cherng-Chyi Han ,  Mao-Min Chen

IPC分类号： G11B5/39 ,  H01L21/00

CPC分类号： G11B5/3954 ,  G11B5/3903

摘要： A method for forming a dual stripe magnetoresistive (DSMR) sensor element. The method employs a lift off stencil an etch mask for sequentially anisotropically etching a blanket second magnetoresistive (MR) layer, a blanket inter stripe dielectric layer and a blanket first magnetoresistive (MR) layer to form a patterned second magnetoresistive (MR) layer, a patterned inter stripe dielectric layer and a patterned first magnetoresistive (MR) layer with fully aligned edges. The lift off stencil is then employed as a lift off mask in forming a patterned dielectric layer covering the fully aligned edges. In a second embodiment a window within a lift off stencil is employed as an etch mask in forming aligned edges of a trimmed patterned first magnetoresistive (MR) layer and a trimmed patterned second magnetoresistive (MR) layer within the composite track width of a patterned first magnetoresistive (MR) layer and a patterned second magnetoresistive (MR) layer which are offset.

摘要翻译： 一种用于形成双条磁阻（DSMR）传感器元件的方法。 该方法采用剥离模板蚀刻掩模，用于顺序地各向异性地蚀刻第二磁阻（MR）层，覆盖层间介质层和覆盖第一磁阻（MR）层，以形成图案化的第二磁阻（MR）层， 图案化的条带间介质层和具有完全对齐边缘的图案化的第一磁阻（MR）层。 然后将脱模模板用作剥离掩模，以形成覆盖完全对准边缘的图案化电介质层。 在第二实施例中，剥离模板内的窗口被用作蚀刻掩模，以在形成图案化的第一磁阻（MR）层和经修整的图案化的第二磁阻（MR）层的图案化第一 磁阻（MR）层和图案化的第二磁阻（MR）层。

公开(公告)号：US08673654B2

公开(公告)日：2014-03-18

申请号：US12589465

申请日：2009-10-23

申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是由α-TaN层上的NiCr，NiFe或NiFeCr层构成的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高MR比，高Vb和RA，其类似于基于优化的Ta覆盖层的MTJ获得的结果。

公开(公告)号：US07880249B2

公开(公告)日：2011-02-01

申请号：US11290763

申请日：2005-11-30

申请人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

发明人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

IPC分类号： H01L29/82

CPC分类号： H01L43/12 ,  H01L27/222 ,  H01L43/08

摘要： Methods are presented for fabricating an MTJ element having a precisely controlled spacing between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not thinned and serves to maintain an exact spacing between the bit line and the MTJ free layer.

摘要翻译： 提出了用于制造在其自由层和位线之间具有精确控制的间隔的MTJ元件的方法，此外，具有邻接MTJ元件的侧面形成的保护性间隔层以消除MTJ层与钻头之间的泄漏电流 线。 每种方法在MTJ元件的侧面上形成电介质间隔层，并且根据该方法，包括在用于形成Cu镶嵌位线的蚀刻工艺期间保护间隔层的附加层。 在该过程的各个阶段，还形成介电层以用作CMP停止层，使得MTJ元件上的覆盖层不会通过使周围绝缘平坦化的CMP工艺变薄。 在平坦化之后，通过各向异性蚀刻去除停止层，其精度使得MTJ元件覆盖层不变薄并且用于保持位线和MTJ自由层之间的精确间隔。

公开(公告)号：US06882509B2

公开(公告)日：2005-04-19

申请号：US10791021

申请日：2004-03-02

申请人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng T. Horng ,  Kochan Ju ,  Simon Liao

发明人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng T. Horng ,  Kochan Ju ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/00 ,  H01F10/06 ,  H01F10/12 ,  H01F10/14 ,  H01F10/16 ,  H01F10/18 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/12944 ,  Y10T428/2495

摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.

摘要翻译： 公开了一种制造SVGMR传感器元件的方法。 在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。 金属氧化物缓冲层增强了镜面散射。 在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。 第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

公开(公告)号：US06775903B2

公开(公告)日：2004-08-17

申请号：US09953546

申请日：2001-09-17

申请人： Cheng T. Horng ,  Kochan Ju ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong ,  Simon Liao

发明人： Cheng T. Horng ,  Kochan Ju ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong ,  Simon Liao

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49039 ,  Y10T29/49044 ,  Y10T29/49055

摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.

摘要翻译： 用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。 包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。 这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。 由此生产的传感器结构适用于高密度应用。

公开(公告)号：US5864450A

公开(公告)日：1999-01-26

申请号：US99537

申请日：1998-06-18

申请人： Mao-Min Chen ,  Neil Leslie Robertson

发明人： Mao-Min Chen ,  Neil Leslie Robertson

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3967 ,  G11B5/127 ,  G11B5/147 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/39

摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.

摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。

公开(公告)号：US5606478A

公开(公告)日：1997-02-25

申请号：US351996

申请日：1994-12-08

申请人： Mao-Min Chen ,  Neil L. Robertson

发明人： Mao-Min Chen ,  Neil L. Robertson

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/187 ,  G11B5/31 ,  G11B5/39 ,  G11B5/193

CPC分类号： G11B5/3967 ,  G11B5/127 ,  G11B5/147 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3146 ,  G11B5/3153 ,  G11B5/1878

摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.

摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片都具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。

公开(公告)号：US5488528A

公开(公告)日：1996-01-30

申请号：US292630

申请日：1994-08-18

申请人： Mao-Min Chen ,  Kochan Ju ,  Neil L. Robertson ,  Po-Kang Wang

发明人： Mao-Min Chen ,  Kochan Ju ,  Neil L. Robertson ,  Po-Kang Wang

IPC分类号： G11B5/31 ,  G11B5/147

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3183

摘要： A horizontal thin film magnetic head is provided which has well aligned pole tips. The head includes first and second seedlayers, the first and second seedlayers being located below a first pole tip and only the second seedlayer being located below the second pole tip. The first pole tip may be capped with a nonmagnetic material such as copper. A very narrow sidegap is employed between the first and second pole tips.

摘要翻译： 提供了具有良好对准的极尖的水平薄膜磁头。 头部包括第一和第二种子层，第一和第二种子层位于第一极端部下方，并且仅第二种子层位于第二极尖端下方。 第一极尖可以用诸如铜的非磁性材料加盖。 在第一和第二极尖之间使用非常窄的侧隙。