Ceramic substrate for semiconductor fabricating device
    75.
    发明申请
    Ceramic substrate for semiconductor fabricating device 有权
    用于半导体制造装置的陶瓷基板

    公开(公告)号:US20020158328A1

    公开(公告)日:2002-10-31

    申请号:US09926800

    申请日:2002-03-19

    IPC分类号: H01L023/053

    摘要: The objective of the invention is to provide a ceramic substrate: wherein even if rapid temperature rising or rapid temperature falling is conducted, no problem of cracking or warp of the ceramic substrate occurs; wherein, in case that the ceramic substrate is a ceramic substrate constituting an electrostatic chuck, local dispersion of chuck power is eliminated, in case that the ceramic substrate is a ceramic substrate constituting a hot plate, local dispersion of temperature of a wafer treating face is eliminated, in case that the ceramic substrate is a ceramic substrate constituting a wafer prober, dispersion of applied voltage of a guard electrode or a ground electrode is eliminated and a stray capacitor or noise can be eliminated. The ceramic substrate of the present invention is a ceramic substrate provided with a conductor layer on the surface of the ceramic substrate or inside the ceramic substrate, wherein: the ratio (t2/t1) of the average thickness of the conductor layer (t2) to the average thickness of the ceramic substrate (t1) is less than 0.1 and; a dispersion of the thickness of the conductor layer to the average thickness of the conductor layer is in a range of null70 to null150%.

    摘要翻译: 本发明的目的是提供一种陶瓷基板:其中,即使进行快速升温或快速降温,也不会发生陶瓷基板的开裂或翘曲的问题; 其中,在陶瓷基板是构成静电卡盘的陶瓷基板的情况下,消除了卡盘功率的局部分散,在陶瓷基板为构成热板的陶瓷基板的情况下,晶片处理面的温度的局部分散为 在陶瓷基板是构成晶片探测器的陶瓷基板的情况下,消除了保护电极或接地电极的施加电压的分散,并且可以消除杂散电容器或噪声。 本发明的陶瓷基板是在陶瓷基板的表面或陶瓷基板的内部具有导体层的陶瓷基板,其中:导体层(t2)的平均厚度(t2)与 陶瓷基板的平均厚度(t1)小于0.1, 导体层的厚度相对于导体层的平均厚度的分散在-70〜+ 150%的范围内。

    Metal-infiltrated polycrystalline diamond composite tool formed from coated diamond particles
    76.
    发明申请
    Metal-infiltrated polycrystalline diamond composite tool formed from coated diamond particles 失效
    金属渗透的多晶金刚石复合工具由涂层金刚石颗粒形​​成

    公开(公告)号:US20020119303A1

    公开(公告)日:2002-08-29

    申请号:US09793312

    申请日:2001-02-26

    IPC分类号: B32B015/04

    摘要: A metal-infiltrated polycrystalline diamond composite tool comprising a plurality of diamond grains forming a continuous polycrystalline diamond matrix, a metallic phase being substantially palladium-free and contiguous to the continuous polycrystalline diamond matrix, wherein the metallic phase interpenetrates the continuous polycrystalline diamond matrix and substantially wets an outer surface of the continuous polycrystalline diamond matrix; and a working surface. The metallic phase is formed from an infiltrant and a wetting-enhancement layer disposed on the outer surfaces of the diamond particles, with both the infiltrant and wetting-enhancement layer being substantially palladium-free and comprising at least one metal from the group consisting of cobalt, iron, and nickel. The invention also includes a preform for a metal-infiltrated polycrystalline diamond composite tool, the perform comprising a container, a metallic infiltrant source, and a plurality of coated diamonds, each coated with a wetting-enhancement layer and, optionally, an activation layer, both of which are substantially palladium-free. Methods of forming the metal-infiltrated polycrystalline diamond composite tool, the preform, and the coated diamond particles used in the tool are also disclosed.

    摘要翻译: 金属渗透的多晶金刚石复合工具,其包括形成连续多晶金刚石基体的多个金刚石晶粒,金属相基本上无钯且与连续多晶金刚石基体相邻,其中金属相互穿连续多晶金刚石基体, 润湿连续多晶金刚石基体的外表面; 和工作面。 金属相由设置在金刚石颗粒的外表面上的浸润剂和润湿增强层形成,浸润剂和润湿增强层基本上不含钯,并且包含至少一种由钴组成的组的金属 ,铁和镍。 本发明还包括用于金属渗透的多晶金刚石复合材料工具的预成型件,其特征包括容器,金属渗透源和多个涂覆的金刚石,每个被涂覆有润湿增强层和任选的活化层, 两者都基本上不含钯。 还公开了形成金属渗透的多晶金刚石复合材料工具的方法,预制件和用于工具中的涂覆的金刚石颗粒。