公开(公告)号：US3972770A

公开(公告)日：1976-08-03

申请号：US560916

申请日：1975-03-21

Applicant: William W. Stein

Inventor： William W. Stein

IPC: H01J1/32 ,  H01J1/34 ,  H01J9/12 ,  H01L21/306 ,  H01L21/20

CPC classification number: H01J9/12 ,  H01J1/32 ,  H01J1/34 ,  H01L21/30612 ,  H01J2201/3423

Abstract: Preferential etches for Gallium Arsenide and Gallium Aluminum Arsenide materials provide a novel single crystalline layer thin film of GaAs for use as a free standing transmission secondary electron emitter or as a photocathode layer on an intermediate epitaxial layer of GaAlAs. Etching of a central area of a substrate layer of GaAs provides an annular rim supporting structure for the epitaxial GaAlAs and GaAs layers. A particular composition of hydrogen peroxide and ammonium hydroxide preferentially etches GaAs while hydrochloric acid preferentially etches GaAlAs.

Abstract translation: 砷化镓和砷化镓铝材料的优选蚀刻提供了一种新颖的GaAs单晶层薄膜，用作独立传输二次电子发射体或GaAlAs中间外延层上的光电阴极层。 蚀刻GaAs衬底层的中心区域为外延GaAlAs和GaAs层提供了一个环形边缘支撑结构。 过氧化氢和氢氧化铵的特定组合物优先蚀刻GaAs，而盐酸优先蚀刻GaAlAs。

公开(公告)号：US3958143A

公开(公告)日：1976-05-18

申请号：US449292

申请日：1974-03-08

Applicant: Ronald L. Bell

Inventor： Ronald L. Bell

IPC: H01J1/34 ,  H01J39/06 ,  H01J31/26

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A long wavelength photoemitter, for example a III-V semiconductor, having a work function reduction activation layer thereon, with means for overcoming the energy barrier between the semiconductor conduction band edge and the vacuum comprising means for thermally energizing the photoexcited electrons in the conduction band from a lower energy level therein to a higher "metastable" energy level in which they may reside for a sufficient time such that the electrons can pass with high probability from the elevated energy level into the vacuum over the energy barrier. In one embodiment, promotion of electrons to this higher energy level in the conduction band results from proper selection of the semiconductor alloy with conduction band levels favoring such room temperature thermal excitation. In another embodiment, a Schottky barrier is formed between the semiconductor emitter surface and the activation layer, by means of which an internal electric field is applied to the cathode resulting in high effective electron temperature for energy level transfer analogous to the intervalley electron transfer process of the Gunn effect. In yet other embodiments, composite semiconductor bodies are fabricated in which one region may advantageously be designed for efficient absorption of long-wavelength photons, and another for efficient operation of the promotion mechanism, which together assure a high quantum efficiency. Other properties of the biased promotion layer may be used to minimize emission of electrons which have been excited by purely thermal means, thus providing a low dark current, usually considered to be incompatible with long-wavelength infrared response.

公开(公告)号：US3925698A

公开(公告)日：1975-12-09

申请号：US40604873

申请日：1973-10-12

Applicant: US ARMY

Inventor： STAHL HERBERT A

IPC: H01J1/34 ,  H01J1/14 ,  H01J19/06

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photoemissive cathode is provided consisting of colloidal semiconducting material on a base transparent to visible and/or infrared radiation. The semiconductor material may be a binary or ternary compound from the groups III-V or II-VI of the periodic table. The semiconducting colloids are formed by a simultaneous precipitation and doping process.

Abstract translation: 在可见光和/或红外辐射透明的基底上提供由胶体半导体材料组成的光发射阴极。 半导体材料可以是来自周期表的III-V族或II-VI族的二元或三元化合物。 半导体胶体通过同时沉淀和掺杂过程形成。

公开(公告)号：US3901745A

公开(公告)日：1975-08-26

申请号：US43813974

申请日：1974-01-30

Applicant: INT STANDARD ELECTRIC CORP

Inventor： PION MARTIN

IPC: H01J1/34 ,  H01J9/12 ,  H01L7/38

CPC classification number: H01J1/34 ,  H01J9/12 ,  H01J2201/3423 ,  Y10S148/051 ,  Y10S148/056 ,  Y10S148/072 ,  Y10S148/12 ,  Y10S148/135

Abstract: A gallium arsenide photocathode is formed from a substrate of gallium arsenide on which are grown a first thin gallium aluminum arsenide layer and a further thin active layer of gallium arsenide. A coating of wax is applied over the thin active GaAs layer and around the sides and peripheral edges of the structure. A central region of the GaAs substrate is then etched to expose the inner GaAlAs layer while leaving a supporting rim around the edges. The rim permits use of a thinner GaAlAs layer.

公开(公告)号：US3894332A

公开(公告)日：1975-07-15

申请号：US41863573

申请日：1973-11-23

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： NATHANSON HARVEY C ,  THOMAS RICHARD N ,  GULDBERG JENS

IPC: H01J1/32 ,  H01J9/12 ,  H01J9/34 ,  H01J31/48 ,  H01J31/49 ,  B01J17/00

CPC classification number: B82Y10/00 ,  H01J1/32 ,  H01J9/12 ,  H01J9/34 ,  H01J31/48 ,  H01J31/49 ,  H01J2201/3423 ,  Y10S257/917 ,  Y10S438/978

Abstract: A solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members. Electrons are emitted into vacuum when a planar-parallel positive anode is mounted in close proximity to the surface. The cathode is responsive to input radiation such as electrons or light directed onto the cathode in modifying the electron emission from the array of electron emitter projections. The method of manufacturing the cathode by providing a predetermined pattern or mosaic of islands of a material exhibiting a greater etch resistant property than the semiconductor material, on a wafer of a semiconductor material and then etching out between and beneath the islands to undercut to a point where the islands are supported by only a small whisker of the semiconductor material. Removal of the islands results in an electron emitter being exposed from beneath each island wherein carriers generated within the body portion and also carriers generated within the depletion regions of the tips deffuse to the electron emitter projections wherein establishment of a high electric field at the tips of the electron emitter projections results in electron emission primarily due to conduction band tunneling. The device provides about 106 emitting points of close proximity so as to effect photographic-like imaging.

Abstract translation: 一种固态辐射敏感场发射器阴极，其包括单晶半导体部件，该单晶半导体部件具有主体部分，其具有从针状或晶须状部件形式的一个表面以紧密间隔且非常尖锐的电子发射突起的均匀阵列。 当平面平行正极安装在表面附近时，电子发射成真空。 阴极响应于输入辐射，例如电子或指向阴极的光，以修改来自电子发射体投影阵列的电子发射。 通过在半导体材料的晶片上提供在半导体材料的晶片上提供具有比半导体材料更大的抗蚀刻性能的材料的岛的预定图案或镶嵌的制造阴极的方法，然后在岛之间和之下蚀刻以切割到点 其中岛仅由半导体材料的小晶须支撑。 去除岛导致电子发射体从每个岛下面暴露，其中在体部分内产生的载流子以及在尖端的耗尽区域内产生的载流子迁移到电子发射器突起，其中在尖端处建立高电场 电子发射器投影导致电子发射主要是由于导带隧穿。 该装置提供约106个发射点的紧密接近，以便实现照相式成像。

公开(公告)号：US3887936A

公开(公告)日：1975-06-03

申请号：US39849173

申请日：1973-09-18

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN ,  RALPH JOHN ERNEST

IPC: H01J1/34 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L31/10 ,  H01L31/112 ,  H01L31/153 ,  H01L17/00

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1123 ,  H01L31/1126

Abstract: A solid state radiation sensitive device is described employing JFETs as the sensitive elements. Two terminal construction is achieved by using a common conductor to capacitively couple to the JFET gate and to one of the source and drain connections.

Abstract translation: 使用JFET作为敏感元件描述了固态辐射敏感器件。 通过使用公共导体电容耦合到JFET栅极和源极和漏极连接中的一个来实现两个端子结构。

公开(公告)号：US3868523A

公开(公告)日：1975-02-25

申请号：US41270473

申请日：1973-11-05

Applicant: PHILIPS CORP

Inventor： KLOPFER ANTON MARTIN ,  GARBE SIEGFRIED ,  FRANK GUNTER ,  PETEREK MANFRED

IPC: C30B19/12 ,  H01J1/34 ,  H01J39/16

CPC classification number: C30B19/12 ,  H01J1/34 ,  H01J2201/3423

Abstract: In order to obtain an optimum freedom in the choice of the material in a semitransparent photocathode which consists of IIIV semiconductor compounds and in which the matching of the lattice constant of the active layer to that of the substrate is achieved by an intermediate layer, and thus to arrive at a sensitivity and/or optical wide band condition which is as high as possible, according to the invention the composition of the intermediate layer is independent of the substrate and of the active layer and its lattice constant differs from the lattice constant of the active layer by less than 0.3% and differs from the grid constant of the substrate up to several per cent, for example up to 3%. Such a photocathode may consist in particular of a substrate of GaP, an intermediate layer of AlxGa1 xAs with x>0.8 and an active layer of GaAs.

Abstract translation: 为了获得在由III-V族半导体化合物组成的半透明光电阴极中选择材料的最佳自由度，并且通过中间层实现了有源层的晶格常数与衬底的晶格常数的匹配， 并且因此达到尽可能高的灵敏度和/或光学宽带状态，根据本发明，中间层的组成与衬底和有源层无关，其晶格常数不同于晶格常数 的活性层小于0.3％，并且不同于衬底的栅格常数达几个百分比，例如高达3％。 这种光电阴极可以特别包括GaP的衬底，具有x> 0.8的Al x Ga 1-x As的中间层和GaAs的有源层。

公开(公告)号：US3845296A

公开(公告)日：1974-10-29

申请号：US40522973

申请日：1973-10-10

Applicant: US ARMY

Inventor： SCHNITZLER A

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01L27/144

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J2201/3423 ,  H01J2231/50026 ,  H01L27/1446

Abstract: A sandwich structure of photosensitive junctions in series with a mosaic of photoemitters. An external grid is positioned adjacent the mosaic of photoemitters and has the high voltage side of a step up voltage divider thereto with the low voltage side connected to the input side of the sandwich structure. The sandwich structure and external grid are enclosed in a vacuum envelope for converting an input optical radiant image into an electron image for display on an electroluminescent screen. A bias light is uniformly flooded over the mosaic of photoemitters to provide saturation electron current therefrom. The flow of electrons emitted from the photoemitters are in proportion to the intensity of infrared light incident on the input side of the sandwich structure. The input side of the structure has an antireflection coating thereof for aiding the incident infrared light in producing electron-hole pairs across the photosensitive junctions.

Abstract translation: 光敏接头的三明治结构与光电发生器的马赛克串联。 外部栅极位于照明器的马赛克附近，并且具有升压分压器的高压侧，低压侧连接到夹层结构的输入侧。 将夹层结构和外部格栅封装在真空外壳中，用于将输入光学辐射图像转换成电子图像以在电致发光屏幕上显示。 偏置光均匀地淹没在光电变换器的马赛克上，从而提供饱和电子电流。 从光电发射器发射的电子的流动与入射在夹层结构的输入侧的红外光的强度成比例。 结构的输入侧具有防反射涂层，用于帮助入射的红外光在整个感光结上产生电子 - 空穴对。

公开(公告)号：US3814993A

公开(公告)日：1974-06-04

申请号：US30678672

申请日：1972-11-15

Applicant: US NAVY

Inventor： KENNEDY A

IPC: H01J1/34 ,  H01L15/00

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A tuneable field assisted photocathode structured as a three layer double heterojunction device with a low work function cesium oxide coating on the electron emitting surface. An internal field assistance bias aids the flow of electrons from a narrow bandgap region, where they are photo-generated, to the wider bandgap negative electron affinity surface region for vacuum emission.

Abstract translation: 可调谐的场辅助光电阴极被构造为具有低功函数氧化铯涂层的电子发射表面上的三层双异质结装置。 内部现场辅助偏置有助于将电子从狭窄的带隙区域流出，在那里它们被光生产，到更宽的带隙负电子亲和表面区域用于真空发射。

公开(公告)号：US3672992A

公开(公告)日：1972-06-27

申请号：US3672992D

申请日：1969-07-30

Applicant: GEN ELECTRIC

Inventor： SCHAEFER DONALD L

IPC: H01J9/12 ,  B44D1/18

CPC classification number: H01J9/12 ,  H01J2201/3423 ,  Y10S148/006 ,  Y10S148/059 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/119 ,  Y10S148/15 ,  Y10S148/169 ,  Y10S438/918

Abstract: A PHOTOEMITTER HAVING A HIGH QUANTUM EFFICIENCY AND A LOW WORK FUNCTION FOR PHOTOEMISSION, E.G. PHOTOELECTRIC THRESHOLD, IS FORMED BY DEPOSITING A 10-100 A. FILM OF A WIDE BANDGAP GROUP III-V COMPOUND, E.G. GALLIUM PHOSPHIDE, ATOP A 0.5-10 MICRON THICK LAYER OF A SECOND GROUP III-V COMPOUND, E.G. GALLIUM ANTIMONIDE, HAVING A BANDGAP MATCHING THE DESIRED PHOTOELECTRIC THRESHOLD. THE FILM SURFACE THEN IS TREATED WITH CESIUM (OR CESIUM AND OXYGEN) TO REDUCE THE SURFACE WORK FUNCTION OF THE COMPOSITE STRUCTURE TO THE DESIRED PHOTOELECTRIC THRESHOLD. WHEN THE GROUP III-V LAYER FORMING THE PHOTOEMITTER IS EPITAXIALLY GROWN ATOP AN ORIENTED SUBSTRATE OF A SEMICONDUCTIVE MATERIAL SUCH AS GALLIUM ARSENIDE HAVING A BANDGAP WIDER THAN THE BANDGAP OF THE OVERLYING LAYER, THE RESULTING PHOTOEMITTER IS TRANSPARENT ONLY IN A RANGE BETWEEN THE BANDGAP OF THE SUBSTRATE AND THE BANDGAP OF THE OVERLYING LAYER.