公开(公告)号：US08502263B2

公开(公告)日：2013-08-06

申请号：US11875381

申请日：2007-10-19

申请人： Jizhong Li ,  Anthony J. Lochtefeld

发明人： Jizhong Li ,  Anthony J. Lochtefeld

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  H01L21/02381 ,  H01L21/02524 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0066 ,  H01L33/08 ,  H01L33/12 ,  H01S5/0207 ,  H01S5/223 ,  H01S5/2234 ,  H01S5/227 ,  H01S5/3202

摘要： Some aspects for the invention include a method and a structure including a light-emitting device disposed over a second crystalline semiconductor material formed over a semiconductor substrate comprising a first crystalline material.

摘要翻译： 本发明的一些方面包括一种方法和结构，其包括设置在包含第一结晶材料的半导体衬底上形成的第二晶体半导体材料上的发光器件。

公开(公告)号：US08428093B2

公开(公告)日：2013-04-23

申请号：US13046269

申请日：2011-03-11

申请人： Dan Botez ,  Jeremy Daniel Kirch

发明人： Dan Botez ,  Jeremy Daniel Kirch

IPC分类号： H01S5/00

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/105 ,  H01S5/12 ,  H01S5/2218 ,  H01S5/223 ,  H01S5/4031 ,  H01S2301/166

摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a non-uniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions.

摘要翻译： 提供能够发射中长波长红外（即4-12mum）辐射的半导体激光阵列器件。 这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构，以及横向延伸穿过包层和光限制结构的多个横向间隔开的沟槽区域，并且部分地延伸到QCL结构中。 沟槽区域限定由激光器阵列器件中的元件区域分开的多个横向间隔的元件区域。 元件区域的特征在于横跨其宽度的不均匀的结构。 作为这种结构不均匀的结果，相对于由元件区域的耦合的基本横向模式组成的阵列模式，优选地抑制由元件区域的耦合的一阶横向模式组成的阵列模式。

公开(公告)号：US20120250714A1

公开(公告)日：2012-10-04

申请号：US13247072

申请日：2011-09-28

申请人： Kazuya OHIRA ,  Haruhiko YOSHIDA ,  Mizunori EZAKI

发明人： Kazuya OHIRA ,  Haruhiko YOSHIDA ,  Mizunori EZAKI

IPC分类号： H01S5/10 ,  H01L21/02

CPC分类号： H01S5/1071 ,  B82Y20/00 ,  G02B6/29338 ,  G02B2006/12097 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/1032 ,  H01S5/2215 ,  H01S5/223 ,  H01S5/34313 ,  H01S2301/176

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer and a laser resonator. The first semiconductor layer includes a first portion and a second portion juxtaposed with the first portion. The laser resonator is provided on the first portion and has a ring-shaped resonator structure circled along a major surface of the first semiconductor layer. The second portion guides light emitted from the laser resonator.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层和激光谐振器。 第一半导体层包括与第一部分并置的第一部分和第二部分。 激光谐振器设置在第一部分上，并且具有沿着第一半导体层的主表面环绕的环形谐振器结构。 第二部分引导从激光谐振器发射的光。

公开(公告)号：US07792169B2

公开(公告)日：2010-09-07

申请号：US11713760

申请日：2007-03-05

申请人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

发明人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

IPC分类号： H01S3/04

CPC分类号： H01S5/0287 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/221 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00

摘要： A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

摘要翻译： 氮化物半导体发光器件包括在第一涂膜上形成的在发光部分形成的氮化铝或氮氧化铝的第一涂膜和氧化铝的第二涂膜。 第二涂膜的厚度为80nm以上1000nm以下。 这里，第一涂膜的厚度优选为6nm以上200nm以下。

公开(公告)号：US07510887B2

公开(公告)日：2009-03-31

申请号：US11790532

申请日：2007-04-26

申请人： Tsunenori Asatsuma ,  Shoji Hirata

发明人： Tsunenori Asatsuma ,  Shoji Hirata

IPC分类号： H01L21/20

CPC分类号： H01S5/223 ,  H01S5/10 ,  H01S5/105 ,  H01S5/2036 ,  H01S5/2081

摘要： This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.

摘要翻译： 该半导体激光装置具有与现有的广域型半导体激光装置相同的结构，不同之处在于有源包层和发光层的发光区域的两个侧面区域是二维光子结晶的。 形成在发光区域的两侧区域上的二维光子晶体是具有780nm激光不能在与区域内的条纹脊平行的谐振器方向上被波导的特性的晶体。 沿该方向行进的光只能存在于夹在两个光子晶体区域之间的发光区域中，这导致由光子晶体区域横向限制的光。 该区域的光学限制抑制了作为光学限制边界的条纹的两边的光的损失，这降低了波面的曲线并使NFP和FFP的光强分布均匀化。

公开(公告)号：US07496124B2

公开(公告)日：2009-02-24

申请号：US11287339

申请日：2005-11-28

申请人： Tokuya Kozaki ,  Masahiko Sano ,  Shuji Nakamura ,  Shinichi Nagahama

发明人： Tokuya Kozaki ,  Masahiko Sano ,  Shuji Nakamura ,  Shinichi Nagahama

IPC分类号： H01S3/04 ,  H01S3/14

CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/00

摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 μm and the etching depth is below the thickness of the p-side cladding layer of 0.1 μm and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 μm, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.

摘要翻译： 氮化物半导体激光装置在高输出功率下具有改进的横向模式的稳定性和更长的寿命，使得该装置可以用于写入和读取具有高容量的记录介质的光源。 氮化物半导体激光器件依次层叠有有源层，p侧覆层，p侧接触层。 该器件还包括通过从p侧接触层蚀刻而形成的条纹结构的波导区域。 通过蚀刻提供的条纹宽度在1-3μm的条纹范围内，并且蚀刻深度低于0.1μm的p侧包覆层的厚度和活性层上方。 特别是，当p侧光波导层包括条形结构的突出部分和突起部分上的p型氮化物半导体层和p侧光波导层的突出部分的厚度不大于1 妈妈，远景图像的纵横比得到改善。 此外，p侧光波导层的厚度大于n侧光波导层的厚度。

公开(公告)号：US20080176352A1

公开(公告)日：2008-07-24

申请号：US11790532

申请日：2007-04-26

申请人： Tsunenori Asatsuma ,  Shoji Hirata

发明人： Tsunenori Asatsuma ,  Shoji Hirata

IPC分类号： H01L21/02

CPC分类号： H01S5/223 ,  H01S5/10 ,  H01S5/105 ,  H01S5/2036 ,  H01S5/2081

摘要： This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.

摘要翻译： 该半导体激光装置具有与现有的广域型半导体激光装置相同的结构，不同之处在于有源包层和发光层的发光区域的两个侧面区域是二维光子结晶的。 形成在发光区域的两侧区域上的二维光子晶体是具有780nm激光不能在与区域内的条纹脊平行的谐振器方向上被波导的特性的晶体。 沿该方向行进的光只能存在于夹在两个光子晶体区域之间的发光区域中，这导致由光子晶体区域横向限制的光。 该区域的光学限制抑制了作为光学限制边界的条纹的两边的光的损失，这降低了波面的曲线并使NFP和FFP的光强分布均匀化。

公开(公告)号：US07344904B2

公开(公告)日：2008-03-18

申请号：US11152255

申请日：2005-06-15

申请人： Yeon-hee Kim ,  Kwang-ki Choi ,  Youn-joon Sung

发明人： Yeon-hee Kim ,  Kwang-ki Choi ,  Youn-joon Sung

IPC分类号： H01L33/00

CPC分类号： H01S5/223 ,  H01S5/22

摘要： Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; forming a ridge portion by etching the sacrificial layer, the upper electrode layer, the upper contact layer, and a predetermined depth of the upper clad layer; exposing both top surfaces of the upper contact layer and both bottom surfaces of the sacrificial layer corresponding thereto by etching portions of the upper electrode layer, which are exposed on both sides of the ridge portion; forming a buried layer having an opening that exposes at least a portion of the bottom surface of the sacrificial layer, the buried layer formed on the surface of the ridge portion and the top surface of the upper clad layer that extends from the ridge portion; and removing the sacrificial layer and a portion of the buried layer disposed thereon by supplying an etchant through the opening.

摘要翻译： 提供了一种制造激光二极管的方法。 该方法的实施例包括在基板上顺序地形成下包层，谐振层，上覆层，上接触层，上电极层和牺牲层; 通过蚀刻牺牲层，上电极层，上接触层和上包层的预定深度来形成脊部; 通过暴露在脊部两侧的上电极层的腐蚀部分，暴露上接触层的上表面和对应于其的牺牲层的两个底表面; 形成具有露出所述牺牲层的底面的至少一部分的开口的掩埋层，所述掩埋层形成在所述脊部的表面上以及所述上覆盖层的从所述脊部延伸的顶面; 以及通过通过所述开口提供蚀刻剂来去除所述牺牲层和设置在其上的所述掩埋层的一部分。

公开(公告)号：US20080063020A1

公开(公告)日：2008-03-13

申请号：US11575387

申请日：2005-09-15

申请人： Kazuhisa Fukuda ,  Chiaki Sasaoka ,  Akitaka Kimura

发明人： Kazuhisa Fukuda ,  Chiaki Sasaoka ,  Akitaka Kimura

IPC分类号： H01S5/323

CPC分类号： H01S5/32341 ,  H01S5/223

摘要： The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.

摘要翻译： 本发明提供一种电流注入效率优异的半导体激光器。 在根据本发明的内条型半导体激光器中，ap型包覆层309具有由GaN层和Al 0.1 Ga 0.9 N层组成的超晶格结构， 交替层叠在一起。 p型覆层309具有高位错密度的一部分和低位错密度的一部分。 也就是说，在电流限制区域308的开口正上方的区域中的位错密度相对较低，而位于电流限制区域308正上方的位置的位错密度相对较高。

公开(公告)号：US07248612B2

公开(公告)日：2007-07-24

申请号：US10702604

申请日：2003-11-07

申请人： Tsunenori Asatsuma ,  Shoji Hirata

发明人： Tsunenori Asatsuma ,  Shoji Hirata

IPC分类号： H01S5/00

CPC分类号： H01S5/223 ,  H01S5/10 ,  H01S5/105 ,  H01S5/2036 ,  H01S5/2081

摘要： This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.

摘要翻译： 该半导体激光装置具有与现有的广域型半导体激光装置相同的结构，不同之处在于有源包层和发光层的发光区域的两个侧面区域是二维光子结晶的。 形成在发光区域的两侧区域上的二维光子晶体是具有780nm激光不能在与区域内的条纹脊平行的谐振器方向上被波导的特性的晶体。 沿该方向行进的光只能存在于夹在两个光子晶体区域之间的发光区域中，这导致由光子晶体区域横向限制的光。 该区域的光学限制抑制了作为光学限制边界的条纹的两边的光的损失，这降低了波面的曲线并使NFP和FFP的光强分布均匀化。