公开(公告)号：US07292298B2

公开(公告)日：2007-11-06

申请号：US11723496

申请日：2007-03-20

Applicant: Fu-Jen Ko ,  Ching-Yu Tsai

Inventor： Fu-Jen Ko ,  Ching-Yu Tsai

IPC: G02F1/1335

CPC classification number: G02F1/133555 ,  G02F1/133514

Abstract: A transflective LCD device. The device includes a first color filter on a first substrate, and a reflective electrode on the first color filter. The reflective electrode has an opaque portion and a transparent portion. A second color filter is formed on an inner side of a second substrate opposite the first substrate. A common electrode is on the second color filter, and a liquid crystal layer is between the first and the second substrates. Another transflective LCD device is provided, including a first color filter on a first substrate, a reflective layer on part of the first color filter, a second color filter on the reflective layer and the first color filter, a transparent electrode on the second color filter, and a common electrode on an inner side of a second substrate opposite the first substrate.

公开(公告)号：US20070254244A1

公开(公告)日：2007-11-01

申请号：US11416264

申请日：2006-05-01

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/0035 ,  G03F7/095 ,  G03F7/0955 ,  G03F7/38

Abstract: The present invention includes a method of forming a resist structure comprising depositing a first photoresist material over a first layer. Selectively exposing portions of the first layer to light to provide exposed portions and unexposed portions in the first photoresist layer. Without developing the first photoresist layer, depositing a second photoresist layer over the first photoresist layer including both exposed portions and unexposed portions. The second photoresist layer being capable of crosslinking in the presence of an acid. Treating the first photoresist layer to cause an acid from only one of the exposed portions or unexposed portions of the first photoresist layer producing a plurality of crosslinked portions of the second photoresist layer. Thereafter, developing the second photoresist layer to remove uncrosslinked portions.

Abstract translation: 本发明包括形成抗蚀剂结构的方法，包括在第一层上沉积第一光致抗蚀剂材料。 将第一层的部分选择性地曝光以在第一光致抗蚀剂层中提供暴露部分和未曝光部分。 在不显影第一光致抗蚀剂层的情况下，在包括两个曝光部分和未曝光部分的第一光刻胶层上沉积第二光致抗蚀剂层。 第二光致抗蚀剂层能够在酸的存在下交联。 处理第一光致抗蚀剂层以仅产生来自第一光致抗蚀剂层的暴露部分中的一个或未曝光部分的酸，产生第二光致抗蚀剂层的多个交联部分。 此后，显影第二光致抗蚀剂层以去除未交联的部分。

公开(公告)号：US07271480B2

公开(公告)日：2007-09-18

申请号：US11237924

申请日：2005-09-29

Applicant: Kuo-Chin Chang ,  Ching-Yu Ni

Inventor： Kuo-Chin Chang ,  Ching-Yu Ni

IPC: H01L23/20

CPC classification number: H01L23/16 ,  H01L23/36 ,  H01L23/562 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/15311

Abstract: A constraint stiffener for reinforcing an integrated circuit package is provided. In one embodiment, the constraint stiffener comprises a rigid, planar base element for bonding to an integrated circuit substrate. The base element has a plurality of elongated support members, and the base element has an opening therein for surrounding an integrated circuit. The base element and support members reduce warpage due to thermal expansion mismatches between at least the integrated circuit and the substrate. In one embodiment, the elongated support members are detachable from the corners of the base element. In another embodiment, the elongated support members have means for attaching and detaching to the corners of the base element. In yet another embodiment, the elongated support members are detachable from about the midsections of the base element. In another embodiment, the elongated support members have means for attaching and detaching to the midsections of the base element.

Abstract translation: 提供了用于加强集成电路封装的约束加强件。 在一个实施例中，约束加强件包括用于结合到集成电路基板的刚性平面基座元件。 基座元件具有多个细长的支撑构件，并且基座元件具有用于围绕集成电路的开口。 基部元件和支撑构件由于至少集成电路和基板之间的热膨胀失配而减少翘曲。 在一个实施例中，细长支撑构件可从基座元件的角部拆卸。 在另一个实施例中，细长支撑构件具有用于附接和分离到基部元件的角部的装置。 在另一个实施例中，细长的支撑构件可从基部元件的中央部分的周围拆卸。 在另一个实施例中，细长的支撑构件具有用于附接和分离到基部元件的中部的装置。

公开(公告)号：US20070210467A1

公开(公告)日：2007-09-13

申请号：US11308274

申请日：2006-03-15

Applicant: Wen-Yih Liao ,  Ching-Yu Hsieh ,  Ying-Tsai Chen ,  Hung- Chang Chen ,  Chao- Ching Lin ,  Fu-Hsi Yu

Inventor： Wen-Yih Liao ,  Ching-Yu Hsieh ,  Ying-Tsai Chen ,  Hung- Chang Chen ,  Chao- Ching Lin ,  Fu-Hsi Yu

IPC: B29D11/00 ,  B29D17/00 ,  B29C43/08 ,  B29C35/08

CPC classification number: B29C35/0888 ,  B29C43/021 ,  B29C43/34 ,  B29C2035/0827 ,  B29C2043/025 ,  B29C2043/043 ,  B29C2043/3488 ,  B29L2017/005 ,  G11B7/24 ,  G11B7/26 ,  G11B7/266

Abstract: An apparatus for fabricating a coverlayer of optical information storage media is disclosed. The apparatus comprises a rotating platform, a rotating plate and a UV irradiation system. A substrate is disposed on the rotating platform and a radiation setting resin material is disposed on a surface of the substrate. The rotating plate is moved towards the rotating platform to compress the radiation-setting resin material against the substrate. The resulting structure is rotated by rotating the rotating platform. A thin radiation-setting resin layer with a uniform thickness is formed on the substrate. The radiation-setting resin layer is illuminated by a UV light to harden the radiation-setting resin layer. Next, the rotating plate is separated from the radiation-setting resin layer while the radiation-setting resin layer remains adhered to the substrate. The hardened radiation-setting resin layer serves as a coverlayer of the optical information storage media.

Abstract translation: 公开了一种用于制造光学信息存储介质的覆盖层的装置。 该装置包括旋转平台，旋转板和UV照射系统。 基板设置在旋转平台上，并且辐射固化树脂材料设置在基板的表面上。 旋转板朝向旋转平台移动以将辐射固化树脂材料压靠在基底上。 通过旋转平台来旋转所得到的结构。 在基板上形成均匀厚度的薄的辐射固化树脂层。 用UV光照射放射线固化树脂层，使固化树脂层硬化。 接下来，将旋转板与放射线固化树脂层分离，同时放射线固化树脂层保持粘附到基底。 硬化的辐射固化树脂层用作光学信息存储介质的覆盖层。

公开(公告)号：US20070183290A1

公开(公告)日：2007-08-09

申请号：US11307365

申请日：2006-02-03

Applicant: Chih-Ching Yu ,  Yu-Chun Lin ,  Hsin-Hui Wu

Inventor： Chih-Ching Yu ,  Yu-Chun Lin ,  Hsin-Hui Wu

IPC: G11B20/10

CPC classification number: H03M13/27 ,  G11B20/10009

Abstract: A method for tuning a plurality of write strategy parameters of an optical storage device includes detecting a plurality of patterns. Each pattern corresponds to a pit or a land on a phase-changed type optical storage medium accessed by the optical storage device. The method further includes performing calculations corresponding to a plurality of data types and generating a plurality of data-to-clock edge deviations respectively corresponding to the data types. Each pattern belongs to a data type. The data-to-clock edge deviations are utilized for tuning the write strategy parameters corresponding to the data types respectively.

Abstract translation: 调整光学存储设备的多个写入策略参数的方法包括检测多个模式。 每个图案对应于由光存储装置访问的相变型光存储介质上的凹坑或焊盘。 该方法还包括执行对应于多个数据类型的计算，并产生分别对应于数据类型的多个数据到时钟边缘偏移。 每个模式属于数据类型。 数据到时钟边缘偏差用于分别调整与数据类型对应的写入策略参数。

公开(公告)号：US20070153141A1

公开(公告)日：2007-07-05

申请号：US11505911

申请日：2006-08-18

Applicant: Ching-Yu Tsai ,  Ching-Huan Lin

Inventor： Ching-Yu Tsai ,  Ching-Huan Lin

IPC: G02F1/1343

CPC classification number: G02F1/133555 ,  G02F1/136213 ,  G02F1/136227

Abstract: A pixel element includes a transistor, a pixel electrode and a storage capacitor. The transistor is a switch device of the pixel element. A data signal is applied to the pixel electrode by switching the transistor. The storage capacitor includes the first electrode and the second electrode. Several holes are formed on a surface of the first electrode. Therefore, layers disposed over the first electrode duplicate the shape of the holes, so that the layers have rough surfaces, for increasing the reflectivity.

Abstract translation: 像素元件包括晶体管，像素电极和存储电容器。 晶体管是像素元件的开关器件。 通过切换晶体管将数据信号施加到像素电极。 存储电容器包括第一电极和第二电极。 在第一电极的表面上形成有多个孔。 因此，设置在第一电极上的层与孔的形状重复，使得这些层具有粗糙的表面，以增加反射率。

公开(公告)号：US20070093067A1

公开(公告)日：2007-04-26

申请号：US11256711

申请日：2005-10-24

Applicant: Ching-Yu Chang ,  Burn Lin

Inventor： Ching-Yu Chang ,  Burn Lin

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/67046 ,  H01L21/67051 ,  H01L21/6708

Abstract: A method of processing a semiconductor wafer can be used prior to an immersion lithography process. The method includes providing a layer of organic photoresist onto a surface of the semiconductor wafer and removing a portion of the photoresist from an outer edge of the wafer using an edge-bead removal process. The outer edge of the wafer is then cleaned using one or more processes, including a mechanical scrubber/cleaner, mega-sonic power, de-ionized water and/or chemical solution.

Abstract translation: 在浸没光刻工艺之前可以使用半导体晶片的处理方法。 该方法包括在半导体晶片的表面上提供一层有机光致抗蚀剂，并使用边缘珠去除工艺从晶片的外边缘去除一部分光致抗蚀剂。 然后使用一个或多个工艺（包括机械洗涤器/清洁器，超声功率，去离子水和/或化学溶液）清洁晶片的外边缘。

公开(公告)号：US20070069399A1

公开(公告)日：2007-03-29

申请号：US11309166

申请日：2006-07-05

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: An overlay mark is provided. A first material layer is formed on a substrate, and then a first trench serving as a trench type outer mark is formed in the first material layer. The first trench is partially filled with the first deposition layer. A second material is formed over the first trench and the first deposition layer. A second trench is formed exposing the first deposition layer within the first trench. The second trench is partially filled with a second deposition layer forming a third trench. A third material layer is formed on the substrate to cover the second deposition layer and the second material layer. A step height is formed on the third deposition layer between the edge of the first trench and the center of the first trench. A raised feature serving as an inner mark is formed on the third deposition layer.

Abstract translation: 提供重叠标记。 在基板上形成第一材料层，然后在第一材料层中形成用作沟槽型外标的第一沟槽。 第一沟槽部分地填充有第一沉积层。 在第一沟槽和第一沉积层上形成第二材料。 形成第二沟槽，使第一沉积层暴露在第一沟槽内。 第二沟槽部分地填充有形成第三沟槽的第二沉积层。 在基板上形成第三材料层以覆盖第二沉积层和第二材料层。 在第一沉积层的边缘和第一沟槽的中心之间的第三沉积层上形成台阶高度。 在第三沉积层上形成用作内标的凸起特征。

公开(公告)号：US20070065020A1

公开(公告)日：2007-03-22

申请号：US11476672

申请日：2006-06-29

Applicant: Ching-Yu Ko

Inventor： Ching-Yu Ko

IPC: G06K9/36

CPC classification number: G06T9/00 ,  H04N19/21 ,  H04N19/60

Abstract: An image compression/decompression method is provided for compressing/decompressing image data. First, each pixel of the raw image data is received. Then, each pixel of the raw image data is compared with a default transparent code to recognize whether the pixel in the raw image data is a transparent code pixel. Finally, a single transparent code pixel or one transparent code pixel of a sequence of transparent code pixels is stored, and a total length information of the single transparent code pixel or the sequence of the transparent code pixels is acquired.

Abstract translation: 提供用于压缩/解压缩图像数据的图像压缩/解压缩方法。 首先，接收原始图像数据的每个像素。 然后，将原始图像数据的每个像素与默认透明码进行比较，以识别原始图像数据中的像素是否是透明代码像素。 最后，存储透明代码像素序列的单个透明代码像素或一个透明代码像素，并获取单个透明代码像素或透明代码像素序列的总长度信息。

公开(公告)号：US20070047414A1

公开(公告)日：2007-03-01

申请号：US11424552

申请日：2006-06-16

Applicant: Chih-Hsiung Chu ,  Chih-Ching Yu

Inventor： Chih-Hsiung Chu ,  Chih-Ching Yu

IPC: G11B7/0045

CPC classification number: G11B7/00456

Abstract: A method for optimizing write parameters using two-stage adjustment is provided. A first kind of write strategy parameters optimization procedure for adjusting at least one static write strategy parameter of a write strategy is performed. A second kind of write strategy parameters optimization procedure for adjusting at least one dynamic write strategy parameter of the write strategy is performed after performing the first kind of write strategy parameters optimization procedure. The static write strategy parameter corresponds to a signal length of a pit on an optical disk and the dynamic write strategy parameter is utilized to overcome heat interference when forming the pit.

Abstract translation: 提供了一种使用两级调整优化写入参数的方法。 执行用于调整写入策略的至少一个静态写入策略参数的第一种写入策略参数优化过程。 在执行第一种写策略参数优化过程之后，执行用于调整写策略的至少一个动态写策略参数的第二种写策略参数优化过程。 静态写入策略参数对应于光盘上的凹坑的信号长度，并且动态写入策略参数用于克服当形成凹坑时的热干扰。