公开(公告)号：US11934021B2

公开(公告)日：2024-03-19

申请号：US17649191

申请日：2022-01-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hemant Martand Dixit ,  William J. Taylor, Jr. ,  Yusheng Bian ,  Theodore Letavic ,  Oscar D. Restrepo

IPC: G02B6/42 ,  G02B6/122 ,  G02B6/125 ,  G02B6/12

CPC classification number: G02B6/4269 ,  G02B6/122 ,  G02B6/125 ,  G02B2006/12135 ,  G02B2006/12142

Abstract: The disclosed subject matter relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to photonic devices having thermally conductive layers for the removal of heat from optoelectronic components in the photonic devices.

公开(公告)号：US20240088272A1

公开(公告)日：2024-03-14

申请号：US17931938

申请日：2022-09-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Vibhor Jain

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/6625

Abstract: Embodiments of the disclosure provide a bipolar transistor and gate structure on a semiconductor fin and methods to form the same. A structure according to the disclosure includes a semiconductor fin including an intrinsic base region and an extrinsic base region adjacent the intrinsic base region along a length of the semiconductor fin. Sidewalls of the intrinsic base region of the semiconductor fin are adjacent an emitter and a collector along a width of the semiconductor fin. A gate structure is on the semiconductor fin and between the intrinsic base region and the extrinsic base region.

公开(公告)号：US20240088157A1

公开(公告)日：2024-03-14

申请号：US17942233

申请日：2022-09-12

Applicant: GlobalFoundries U.S. Inc.

Inventor： Michel Abou-Khalil ,  Steven M. Shank ,  Sarah McTaggart ,  Aaron Vallett ,  Rajendran Krishnasamy ,  Megan Lydon-Nuhfer

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/84

CPC classification number: H01L27/1203 ,  H01L21/76286 ,  H01L21/84

Abstract: Semiconductor device structures with device isolation and methods of forming a semiconductor device structure with device isolation. The structure comprises a semiconductor substrate, a first semiconductor layer on the semiconductor substrate, a second semiconductor layer in a cavity in the first semiconductor layer, and a device structure including a doped region in the second semiconductor layer. The first semiconductor layer comprises a porous semiconductor material, and the second semiconductor layer comprises a single-crystal semiconductor material.

公开(公告)号：US20240085247A1

公开(公告)日：2024-03-14

申请号：US17931670

申请日：2022-09-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Santosh Sharma ,  Michael J. Zierak ,  Steven J. Bentley ,  Johnatan Avraham Kantarovsky

IPC: G01K7/18 ,  H01C7/04 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/778

CPC classification number: G01K7/183 ,  H01C7/041 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/7786

Abstract: A structure includes a negative temperature coefficient (NTC) resistor for use in gallium nitride (GaN) technology. The NTC resistor includes a p-type doped GaN (pGaN) layer, and a gallium nitride (GaN) heterojunction structure under the pGaN layer. The GaN heterojunction structure includes a barrier layer and a channel layer. An isolation region extends across an interface of the barrier layer and the channel layer, and a first metal electrode is on the pGaN layer spaced from a second metal electrode on the pGaN layer. The NTC resistor can be used as a temperature compensated reference in a structure providing a temperature detection circuit. The temperature detection circuit includes an enhancement mode HEMT sharing parts with the NTC resistor and includes temperature independent current sources including depletion mode HEMTs.

公开(公告)号：US11927801B2

公开(公告)日：2024-03-12

申请号：US17880006

申请日：2022-08-03

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Abdelsalam Aboketaf

IPC: G02B6/126 ,  G02B6/12 ,  G02B6/132

CPC classification number: G02B6/126 ,  G02B6/12002 ,  G02B6/132 ,  G02B2006/1215

Abstract: Structures for a waveguide core and methods of forming such structures. The structure comprises a stacked waveguide core including a first waveguide core and a second waveguide core stacked with the first waveguide core, and a layer adjacent to the stacked waveguide core. The layer comprises a material having a refractive index that is variable in response to a stimulus.

公开(公告)号：US11923417B2

公开(公告)日：2024-03-05

申请号：US17692517

申请日：2022-03-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  Shesh Mani Pandey

IPC: H01L29/10 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/66 ,  H01L29/735 ,  H01L29/737

CPC classification number: H01L29/1008 ,  H01L29/6625 ,  H01L29/735 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/737

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a substrate having a well, a first terminal including a first raised semiconductor layer, a second terminal including a second raised semiconductor layer, and a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The base layer has an overlapping arrangement with the well. The structure further includes a dielectric layer positioned in a vertical direction between the first terminal and the substrate, the second terminal and the substrate, and the base layer and the substrate.

公开(公告)号：US20240068985A1

公开(公告)日：2024-02-29

申请号：US17821836

申请日：2022-08-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： Mark D. Levy ,  Siva P. Adusumilli ,  Laura J. Silverstein

IPC: G01N27/414 ,  B01L3/00 ,  G01N21/05

CPC classification number: G01N27/4145 ,  B01L3/502715 ,  G01N21/05 ,  B01L2300/047 ,  B01L2300/0636 ,  B01L2300/0645

Abstract: A structure includes a lab-on-chip (LOC) sensor and frontside port and cavity features for conveying a flowable sample (fluid or gas) to a sensing element of the sensor. The cavity is confined within middle of the line (MOL) dielectric layer(s). Alternatively, the cavity includes a lower section within MOL dielectric layer(s), an upper section within back end of the line (BEOL) dielectric layer(s) in the first metal (M1) level, a divider between the sections, and a duct linking the sections. Alternatively, the cavity includes a lower portion within MOL dielectric layer(s) and an upper portion continuous with the lower portion and within BEOL dielectric layer(s) in the M1 level. Optionally, the cavity is separated from the sensing element by an additional dielectric layer and/or at least partially lined with a dielectric liner. The port extends from the top of the BEOL dielectric layers down to the cavity.

公开(公告)号：US20240061176A1

公开(公告)日：2024-02-22

申请号：US17892584

申请日：2022-08-22

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/122

CPC classification number: G02B6/1228

Abstract: Structures for an optical coupler and methods of forming an optical coupler. The structure comprises a first waveguide core including a first tapered section, a second waveguide core including a second tapered section overlapped with the first tapered section, and an active layer including a third tapered section overlapped with the second tapered section. The first waveguide core comprises a first passive material, the second waveguide core comprises a second passive material, and the active layer comprises an active material.

公开(公告)号：US11901304B2

公开(公告)日：2024-02-13

申请号：US17323423

申请日：2021-05-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Sunil K. Singh ,  Vibhor Jain ,  Siva P. Adusumilli ,  Sebastian T. Ventrone ,  Johnatan A. Kantarovsky ,  Yves T. Ngu

IPC: H01L23/544 ,  H01L23/48 ,  H01L23/00

CPC classification number: H01L23/544 ,  H01L23/481 ,  H01L23/57 ,  H01L23/573 ,  H01L2223/5442 ,  H01L2223/54433

Abstract: The disclosure provides an integrated circuit (IC) structure with fluorescent materials, and related methods. An IC structure according to the disclosure may include a layer of fluorescent material on an IC component. The layer of fluorescent material defines a portion of an identification marker for the IC structure.

公开(公告)号：US20240045142A1

公开(公告)日：2024-02-08

申请号：US17880006

申请日：2022-08-03

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Abdelsalam Aboketaf

IPC: G02B6/126 ,  G02B6/132 ,  G02B6/12

CPC classification number: G02B6/126 ,  G02B6/132 ,  G02B6/12002 ,  G02B2006/1215

Abstract: Structures for a waveguide core and methods of forming such structures. The structure comprises a stacked waveguide core including a first waveguide core and a second waveguide core stacked with the first waveguide core, and a layer adjacent to the stacked waveguide core. The layer comprises a material having a refractive index that is variable in response to a stimulus.