公开(公告)号：US07839087B2

公开(公告)日：2010-11-23

申请号：US12122472

申请日：2008-05-16

Applicant: Isao Takasu ,  Yuko Nomura ,  Tsuyoshi Hioki ,  Isao Amemiya ,  Kazuhide Abe

Inventor： Isao Takasu ,  Yuko Nomura ,  Tsuyoshi Hioki ,  Isao Amemiya ,  Kazuhide Abe

IPC: H01J1/62

CPC classification number: H01L33/54 ,  H01L33/46 ,  H01L33/507 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method of manufacturing a light emitting device. The method includes: mounting a light emitting chip on a substrate; forming a transparent resin portion and a phosphor layer by using a liquid droplet discharging apparatus, the transparent resin portion being formed in a shape of a dome and covering the light emitting chip to fill an exterior thereof on the substrate, a phosphor layer containing phosphor and being formed on an exterior of the transparent resin portion close to at least a top side thereof; and forming a reflecting layer at a position exterior of the transparent resin portion and the phosphor layer close to the substrate.

Abstract translation: 一种制造发光器件的方法。 所述方法包括：将发光芯片安装在基板上; 通过使用液滴喷射装置形成透明树脂部分和荧光体层，所述透明树脂部分形成为圆顶形状并且覆盖所述发光芯片以将其外部填充在所述基板上，所述荧光体层包含磷光体和 形成在透明树脂部分的至少其顶侧附近的外部; 并且在透明树脂部分的外部和靠近基板的荧光体层的位置处形成反射层。

公开(公告)号：US07812452B2

公开(公告)日：2010-10-12

申请号：US11826331

申请日：2007-07-13

Applicant: Kazuhide Abe

Inventor： Kazuhide Abe

IPC: H01L23/52

CPC classification number: H01L27/11502 ,  H01L27/11507

Abstract: A semiconductor device according to the present invention includes a semiconductor substrate; a capacitor having a lower electrode formed on said semiconductor substrate, a capacity insulating film formed on said lower electrode, and an upper electrode formed on said capacity insulating film; contact holes formed on said upper electrode and said lower electrode; a barrier layer containing oxygen, formed inside said contact holes; and a conductive layer which fills said contact holes in which said barrier layer is formed on the inside.

Abstract translation: 根据本发明的半导体器件包括半导体衬底; 形成在所述半导体衬底上的下电极的电容器，形成在所述下电极上的电容绝缘膜和形成在所述电容绝缘膜上的上电极; 形成在所述上电极和所述下电极上的接触孔; 在所述接触孔内形成含有氧的阻挡层; 以及填充在内部形成有阻挡层的所述接触孔的导电层。

公开(公告)号：US07770274B2

公开(公告)日：2010-08-10

申请号：US11946910

申请日：2007-11-29

Applicant: Kenya Sano ,  Ryoichi Ohara ,  Naoko Yanase ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo ,  Hiroshi Toyoda ,  Masahiko Hasunuma ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki ,  Hironobu Shibata

Inventor： Kenya Sano ,  Ryoichi Ohara ,  Naoko Yanase ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo ,  Hiroshi Toyoda ,  Masahiko Hasunuma ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki ,  Hironobu Shibata

IPC: H04R17/00

CPC classification number: H03H9/02015 ,  H01H2057/006 ,  H01L41/0477 ,  H01L41/094 ,  H01L41/316 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H9/542 ,  H03H9/582 ,  H03H9/605 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/025 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/49117 ,  Y10T29/49155

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract translation: 压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。 压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

公开(公告)号：US07675222B2

公开(公告)日：2010-03-09

申请号：US11781667

申请日：2007-07-23

Applicant: Takashi Kawakubo ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

Inventor： Takashi Kawakubo ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

IPC: H01L41/08

CPC classification number: H01G7/06 ,  H01H2057/006 ,  H01L41/0933 ,  H01L41/094

Abstract: A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

Abstract translation: 薄膜压电致动器包括驱动部件，其至少一端由锚固部分支撑。 驱动部包括：压电膜，设置在压电膜的第一区域下方的第一下电极，设置在与压电膜的第一区不同的第二区域下方的第二下电极，与第一下电极相对设置的第一上电极 压电膜上的第一下电极，与压电膜上的第二下电极相对设置的第二上电极，经由形成在压电膜中的第一通孔电连接第一下电极和第二上电极的第一连接部 以及第二连接部，其经由形成在所述压电膜中的第二通路孔电连接所述第二下部电极和所述第一上部电极。

公开(公告)号：US20090184246A1

公开(公告)日：2009-07-23

申请号：US12314955

申请日：2008-12-19

Applicant: Kazuhide Abe

Inventor： Kazuhide Abe

IPC: H01L31/09 ,  H01L27/14 ,  H01L31/02

CPC classification number: G01J5/20 ,  G01J5/02 ,  G01J5/023

Abstract: There is provided an infrared detector including: a silicon substrate provided with a concave portion; an infrared receiver having a polysilicon layer; and a beam that supports the infrared receiver above the concave portion, and extends along a side of the infrared receiver from the infrared receiver to connect with the silicon substrate, the beam having at least two bent portions, wherein at least one of the bent portions of the beam is disposed at a position on a side opposite to the concave portion with the polysilicon layer as a reference point.

Abstract translation: 提供一种红外检测器，包括：设置有凹部的硅基板; 具有多晶硅层的红外线接收器; 以及梁，其在所述凹部上方支撑所述红外线接收器，并且沿着所述红外线接收器的一侧从所述红外接收器延伸以与所述硅基板连接，所述梁具有至少两个弯曲部分，其中所述弯曲部分中的至少一个 的光束以与多晶硅层为基准的凹部对置的一侧的位置配置。

公开(公告)号：US07414314B2

公开(公告)日：2008-08-19

申请号：US10910318

申请日：2004-08-04

Applicant: Kazuhide Abe

Inventor： Kazuhide Abe

IPC: H01L29/40

CPC classification number: H01L23/5226 ,  H01L21/2885 ,  H01L21/31116 ,  H01L21/3212 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device has a semiconductor substrate, a first insulating film formed on a surface of the semiconductor substrate, a first recess formed in the first insulating film, a first barrier film formed on an inner surface of the first insulating film except a top peripheral region of the first trench, a first conductive film formed in the first trench, and a covering film formed on an upper surface and a top peripheral region of the first conductive film and an upper surface of the first barrier film. The first conductive film includes copper.

Abstract translation: 半导体器件具有半导体衬底，形成在半导体衬底的表面上的第一绝缘膜，形成在第一绝缘膜中的第一凹槽，形成在除了顶部周边区域之外的第一绝缘膜的内表面上的第一阻挡膜 形成在第一沟槽中的第一导电膜和形成在第一导电膜的上表面和顶周边区域上的覆盖膜和第一阻挡膜的上表面。 第一导电膜包括铜。

公开(公告)号：US20080072408A1

公开(公告)日：2008-03-27

申请号：US11946910

申请日：2007-11-29

Applicant: Kenya SANO ,  Ryoichi Ohara ,  Naoko Yanase ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo ,  Hiroshi Toyoda ,  Masahiko Hasunuma ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki ,  Hironobu Shibata

Inventor： Kenya SANO ,  Ryoichi Ohara ,  Naoko Yanase ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo ,  Hiroshi Toyoda ,  Masahiko Hasunuma ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki ,  Hironobu Shibata

IPC: H01L41/22 ,  H04R31/00 ,  H05K3/10

CPC classification number: H03H9/02015 ,  H01H2057/006 ,  H01L41/0477 ,  H01L41/094 ,  H01L41/316 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H9/542 ,  H03H9/582 ,  H03H9/605 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/025 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/49117 ,  Y10T29/49155

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract translation: 压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。 压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

公开(公告)号：US20080042281A1

公开(公告)日：2008-02-21

申请号：US11826472

申请日：2007-07-16

Applicant: Kazuhide Abe

Inventor： Kazuhide Abe

IPC: H01L23/532 ,  H01L21/4763

CPC classification number: H01L21/2855 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883

Abstract: A semiconductor device includes: a semiconductor substrate; a first insulation film that is formed on the semiconductor substrate and includes grooves (including through holes); a metal film that is formed inside the grooves and includes a first metal (e.g., titanium (Ti)); a glue film formed on a side surface of the metal film; and a metal plating film that is formed on a side surface of the glue film, comprises a second metal (e.g., copper (Cu)), and includes a region having the first metal (e.g., Ti) in a surface that contacts the glue film. Thus, there are provided a semiconductor device and a semiconductor device fabrication method that have excellent adhesiveness and are capable of ensuring high reliability.

Abstract translation: 半导体器件包括：半导体衬底; 第一绝缘膜，形成在半导体基板上并且包括沟槽（包括通孔）; 形成在所述槽内的包含第一金属（例如钛（Ti））的金属膜; 形成在金属膜的侧面上的胶膜; 以及形成在胶膜的侧面上的金属镀膜，包括第二金属（例如铜（Cu）），并且包括在与胶水接触的表面中具有第一金属（例如Ti）的区域 电影。 因此，提供了具有优异的粘附性并且能够确保高可靠性的半导体器件和半导体器件制造方法。

公开(公告)号：US20070209176A1

公开(公告)日：2007-09-13

申请号：US11741473

申请日：2007-04-27

Applicant: Takashi KAWAKUBO ,  Kazuhide Abe ,  Mayumi Morizuka

Inventor： Takashi KAWAKUBO ,  Kazuhide Abe ,  Mayumi Morizuka

IPC: H04R17/00 ,  H05K3/10

CPC classification number: H03H9/173 ,  H03B5/326 ,  H03B5/366 ,  H03H9/0542 ,  H03H2009/02204 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.

Abstract translation: 本发明提供一种包括薄膜BAW谐振器和可变电容器元件的压控振荡器。 薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电 电影。 另一方面，可变电容器元件包括形成在Si衬底上的固定电极，形成在Si衬底上的锚定部分，支撑在锚定部分上并且定位成面对Si衬底的第一电极，形成在第二压电膜上的第二压电膜 第一电极和形成在第二压电膜上的第二电极。

公开(公告)号：US07211933B2

公开(公告)日：2007-05-01

申请号：US10935264

申请日：2004-09-08

Applicant: Takashi Kawakubo ,  Kazuhide Abe ,  Mayumi Morizuka

Inventor： Takashi Kawakubo ,  Kazuhide Abe ,  Mayumi Morizuka

IPC: H01L41/08

CPC classification number: H03H9/173 ,  H03B5/326 ,  H03B5/366 ,  H03H9/0542 ,  H03H2009/02204 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.

Abstract translation: 本发明提供一种包括薄膜BAW谐振器和可变电容器元件的压控振荡器。 薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电 电影。 另一方面，可变电容器元件包括形成在Si衬底上的固定电极，形成在Si衬底上的锚定部分，支撑在锚定部分上并且定位成面对Si衬底的第一电极，形成在第二压电膜上的第二压电膜 第一电极和形成在第二压电膜上的第二电极。