公开(公告)号：US20220140204A1

公开(公告)日：2022-05-05

申请号：US17428635

申请日：2020-02-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Yi ZHENG ,  Dominik EISERT ,  Georg ROSSBACH

IPC: H01L33/50

Abstract: A wavelength converter may include a phosphor layer and a filter layer where the filter layer may be directly attached to the phosphor layer. The wavelength converter may have an overall thickness ranging from 20 μm to 80 μm.
A light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly are also disclosed.

公开(公告)号：US20220130893A1

公开(公告)日：2022-04-28

申请号：US17434511

申请日：2020-03-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tansen Varghese ,  Bruno Jentzsch

IPC: H01L27/15 ,  H01L33/00 ,  H01S5/0239

Abstract: In an embodiment a radiation emitting semiconductor chip includes a semiconductor layer sequence with a plurality of active regions and a main extension plane, wherein each active region has a main extension direction, wherein each active region is configured to emit electromagnetic radiation from an emitter region extending parallel to the main extension plane, wherein at least two active regions overlap in plan view, wherein the emitter regions are arranged at grid points of a regular grid connected by at least one grid line, and wherein the main extension direction of at least one active region encloses an angle of at least 10° and at most 80° with the grid lines of the regular grid.

公开(公告)号：US20220126749A1

公开(公告)日：2022-04-28

申请号：US17430855

申请日：2020-02-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Michael BRANDL ,  Peter BRICK ,  Uli HILLER ,  Sebastian STIGLER ,  Armin WETTERER

IPC: B60Q3/62 ,  B60Q3/74 ,  F21V9/38

Abstract: A light emitting device includes a radiation source for the emission of electromagnetic radiation and a converter element on which the electromagnetic radiation impinges in a first surface region and which, excited by the impinged electromagnetic radiation, emits visible light into an environment in a second surface region which differs at least partially from the first surface region. The wavelength of the light emitted into the environment differs from the wavelength of the electromagnetic radiation impinged on the converter element. The converter element includes a luminous element including a textile with a converter material. The converter material due to excitation by the electromagnetic radiation with a first wavelength emits visible light with a second wavelength differing from the first wavelength. The radiation source realizes a background illumination for the converter element. The first surface region is formed by a side surface or a back surface of the converter element.

公开(公告)号：US11316077B2

公开(公告)日：2022-04-26

申请号：US16480732

申请日：2018-01-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz ,  Norwin von Malm

IPC: H01L33/50 ,  H01L33/60 ,  H01L51/52 ,  H01L51/50 ,  H01L33/10

Abstract: A radiation-emitting device includes a semiconductor layer sequence having an active layer that emits a primary radiation during operation, a decoupling surface on a surface of the semiconductor layer sequence, a wavelength conversion layer on a side of the semiconductor layer sequence facing away from the decoupling surface, containing at least one conversion material that converts the primary radiation into secondary radiation, and a mirror layer on the side of the wavelength conversion layer facing away from the semiconductor layer sequence, wherein the at least one conversion material is electrically conductive and/or embedded in an electrically conductive matrix material.

公开(公告)号：US11316067B2

公开(公告)日：2022-04-26

申请号：US16342163

申请日：2017-10-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Marcus Eichfelder ,  Alexander Walter

IPC: H01L33/02 ,  H01L31/0352 ,  H01L31/107 ,  H01L33/32 ,  H02S40/44 ,  H01L33/04 ,  H01L31/105 ,  H01L33/06

Abstract: A semiconductor body is disclosed. In an embodiment a semiconductor body includes an n-doped region comprising a first layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their doping concentration, and wherein the first and second layers of each pair have the same material composition except for their doping and a second layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their material composition, an active region, wherein the second layer sequence is disposed between the first layer sequence and the active region and a p-doped region, wherein the active region is disposed between the n-doped region and the p-doped region.

公开(公告)号：US20220123529A1

公开(公告)日：2022-04-21

申请号：US17430658

申请日：2020-01-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens EBBECKE

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/028

Abstract: The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.

公开(公告)号：US11309459B2

公开(公告)日：2022-04-19

申请号：US16495144

申请日：2018-04-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Clemens Vierheilig ,  Philipp Kreuter ,  Rainer Hartmann ,  Michael Binder ,  Tobias Meyer

IPC: H01L33/42 ,  H01L33/30 ,  H01L33/00

Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence including an active zone that generates radiation by electroluminescence; a p-electrode and an n-electrode; an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence; and an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone, wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that, during operation, a current flow through the semiconductor layer sequence is controllable in the edge region.

公开(公告)号：US20220115569A1

公开(公告)日：2022-04-14

申请号：US17645632

申请日：2021-12-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas BIEBERSDORF ,  Michael BRANDL ,  Peter BRICK ,  Jean-Jacques DROLET ,  Hubert HALBRITTER ,  Laura KREINER ,  Erwin LANG ,  Andreas LEBER ,  Marc PHILIPPENS ,  Thomas SCHWARZ ,  Julia STOLZ ,  Xue WANG ,  Karsten DIEKMANN ,  Karl ENGL ,  Siegfried HERRMANN ,  Stefan ILLEK ,  Ines PIETZONKA ,  Andreas RAUSCH ,  Simon SCHWALENBERG ,  Petrus SUNDGREN ,  Georg BOGNER ,  Christoph KLEMP ,  Christine RAFAEL ,  Felix FEIX ,  Eva-Maria RUMMEL ,  Nicole HEITZER ,  Marie ASSMANN ,  Christian BERGER ,  Ana KANEVCE

IPC: H01L33/52 ,  H01L33/50 ,  H01L33/60 ,  H01L33/04 ,  H01L25/075

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US20220109282A1

公开(公告)日：2022-04-07

申请号：US17423209

申请日：2019-01-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus BOSS ,  Chai Liang LOKE ,  Zeljko PAJKIC ,  Wan Leng LIM

IPC: H01S5/02315 ,  H01S5/02

Abstract: The invention refers to electronic devices (D) and to a method for obtaining electronic devices (D) comprising, electronic elements, in particular optoelectronic elements (7), the method comprising the steps of:—providing (S1) a substrate from which first walls (1) protrude along a Z-axis towards an open end side forming at least one rectangle along a X-Y-plane surrounding a respective at least one space(S);—positioning (S2) a respective electronic element (7a), in particular optoelectronic element (7),within the respective space(S)and connecting it to contact pads (9);—attaching (S3) a respective functional element (11a), in particular optical element (11), in particular a lens, at the open end side of respective first wall (1) to cover the respective space (S);—forming a second wall (2) by surrounding (S4) the respective functional element (11a), in particular optical element (11), with a darn material.

公开(公告)号：US20220109093A1

公开(公告)日：2022-04-07

申请号：US17428036

申请日：2020-02-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karlheinz ARNDT

IPC: H01L33/64 ,  H01L25/075

Abstract: In one embodiment, the light-emitting diode module comprises a carrier and a plurality of light-emitting diodes. Thereby, several types of light-emitting diodes are present. The light-emitting diodes can be controlled individually or in groups electrically independently of one another. The light-emitting diodes each comprise a first and a second electrical contact. The carrier comprises several electrically conductive main layers, between each of which there is an electrically insulating intermediate layer. The contacts of the light-emitting diodes are attached to a carrier upper side on one of the first main layers. Starting from the first contacts, electrical through-connections are each connected directly to a carrier underside with a last main layer of the main layers. Starting from the second contacts, electrical through-connection each terminate at a penultimate main layer of the main layers, wherein the penultimate main layer is located inside the carrier.