公开(公告)号：US20080223286A1

公开(公告)日：2008-09-18

申请号：US12073178

申请日：2008-02-29

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B23/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/10

摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.

摘要翻译： 本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。 包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐 在x轴方向。 因此，在m平面上存在支撑工具与晶种接触的三个接触点。 支撑工具具有在垂直方向上延伸的两个支撑构件。 一个支撑构件具有相对于水平面α倾斜30°的端部。 在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。 实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。

公开(公告)号：US07084421B2

公开(公告)日：2006-08-01

申请号：US09725496

申请日：2000-11-30

申请人： Masayoshi Koike ,  Shiro Yamazaki ,  Akira Kojima

发明人： Masayoshi Koike ,  Shiro Yamazaki ,  Akira Kojima

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/32341

摘要： A light-emitting semiconductor device provides an active layer which comprises thirteen (13) layers that includes six (6) pairs of quantum barrier layers made of Al0.95In0.05N and quantum well layers made of Al0.70In0.30N, which are laminated together alternately. The semiconductor device may also comprise a quantum well layer having a high composition ratio of indium (In). Forming the quantum barrier layer and the quantum well layer to have a high composition ratio of indium (In) increases the lattice constant of the active layer of the semiconductor device.

摘要翻译： 一种发光半导体器件提供了一种有源层，其包括十三（13）层，其包括六（6）对量子阻挡层，所述量子势垒层由Al 0.95 N和N N N制成， 交替地层叠在一起的由Al 0.70 N 3 O 3 N制成的量子阱层。 半导体器件还可以包括具有高的铟（In）组成比的量子阱层。 形成量子势垒层和量子阱层以具有高的铟（In）组成比增加了半导体器件的有源层的晶格常数。

公开(公告)号：US06593599B1

公开(公告)日：2003-07-15

申请号：US09417778

申请日：1999-10-14

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

公开(公告)号：US06362017B1

公开(公告)日：2002-03-26

申请号：US09586607

申请日：2000-06-02

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US06265726B1

公开(公告)日：2001-07-24

申请号：US09379621

申请日：1999-08-24

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L2906

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 &mgr;m thickness. The p-layer 6 has about a 1.0 &mgr;m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

公开(公告)号：US6083535A

公开(公告)日：2000-07-04

申请号：US930995

申请日：1997-12-29

申请人： Tadahiko Chiba ,  Shiro Yamazaki ,  Toshihide Saishoji

发明人： Tadahiko Chiba ,  Shiro Yamazaki ,  Toshihide Saishoji

IPC分类号： A01N3/02 ,  A01N43/653 ,  A61K9/14

CPC分类号： A01N3/02 ,  A01N43/653

摘要： An effervescent granular preparation for keeping cut flower freshness includes an azole-substituted cyclopentanol derivative represented by formula (I) (set forth below) and 2-bromo-2-nitro-1, 3-propanediol as effective components and to a process for producing the same. The effervescent granular preparation is produced by granulation of a mixture containing at least one of glucose, D-mannitol and sucrose as an excipient by incorporating an organic acid such as citric acid or malic acid and a hydrogen carbonate such as sodium hydrogen carbonate. ##STR1## wherein A represents a nitrogen atom or a CH group, R.sup.1 and R.sup.2 represent each independently a hydrogen or a C.sub.1 -C.sub.3 alkyl group, and X represents a hydrogen atom or a halogen atom.

摘要翻译： PCT No.PCT / JP96 / 00445 Sec。 371日期1997年12月29日第 102（e）日期1997年12月29日PCT提交1996年2月27日PCT公布。 出版物WO96 / 32012 PCT 日期1996年10月17日用于保持切花新鲜度的泡腾颗粒制剂包括由式（I）表示的唑类取代的环戊醇衍生物（下文）和作为有效成分的2-溴-2-硝基-1,3-丙二醇， 涉及其制造方法。 通过掺入有机酸如柠檬酸或苹果酸和碳酸氢钠如碳酸氢钠，通过造粒含有葡萄糖，D-甘露糖醇和蔗糖中的至少一种作为赋形剂的混合物来制备泡腾颗粒制剂。 其中A表示氮原子或CH基团，R 1和R 2各自独立地表示氢或C 1 -C 3烷基，X表示氢原子或卤素原子。

公开(公告)号：US6005258A

公开(公告)日：1999-12-21

申请号：US806646

申请日：1997-02-26

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L29/06

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/40 ,  H01L33/382 ,  H01L33/385

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N emission layer (5), and a Mg-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N p-layer (6). The AlN layer (2)--is 500 .ANG. in thickness. The GaN N.sup.+ -layer (3) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cm.sup.3. The n.sup.+ -layer (4) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cn.sup.3. The emission layer (5) is about 0.5 .mu.m in thickness. The p-layer 6 is about 1.0 .mu.m in thickness and has a hole concentration of about 2.times.10.sup.17 /cm.sup.3. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8) from each other. The composition ration of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n.sup.+ -layer (3). The LED (10) is designed to improve luminous intensity and to obtain a purer blue color.

摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 具有高载流子（n型）浓度的Si掺杂（Al x Ga 1-x 3）y 3 In 1-y 3 N n +层（4），锌（Zn）和Si掺杂（Alx2Ga1-x2）y2In1-y2N发射层（5） 和Mg掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N p层（6）。 AlN层（2） - 厚度为500 ANGSTROM。 GaN N +层（3）的厚度约为2.0μm，电子浓度约为2×1018 / cm3。 n +层（4）的厚度约为2.0μm，电子浓度约为2×10 18 / cn 3。 发射层（5）的厚度约为0.5μm。 p层6的厚度为约1.0μm，并且具有约2×10 17 / cm 3的空穴浓度。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 沟槽（9）将电极（7,8）彼此电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比来满足n +层（3）中的GaN的晶格常数。 LED（10）被设计成改善发光强度并获得更纯的蓝色。

公开(公告)号：US5362885A

公开(公告)日：1994-11-08

申请号：US081945

申请日：1993-06-25

申请人： Hideo Arabori ,  Shiro Yamazaki ,  Masato Arahira ,  Aiko Murakami

发明人： Hideo Arabori ,  Shiro Yamazaki ,  Masato Arahira ,  Aiko Murakami

IPC分类号： C07D403/12 ,  A01N47/36 ,  C07D207/32 ,  C07D207/333 ,  C07D207/337 ,  C07D207/44 ,  C07D207/452 ,  C07D231/12 ,  C07D521/00 ,  C07D207/325

CPC分类号： C07D207/333 ,  A01N47/36 ,  C07D207/337 ,  C07D207/452 ,  C07D231/12 ,  C07D233/56 ,  C07D249/08 ,  C07D521/00

摘要： Disclosed herein are N-substituted-3-(nitrogen-containing 5-membered ring)benzenesulfonamide derivatives of the formula (I): ##STR1## R.sup.1 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(nitrogen-containing 5-membered ring)benzenesulfonamide derivatives as active ingredients.

摘要翻译： 本文公开了式（I）的N-取代-3-（含氮五元环）苯磺酰胺衍生物：其中， Z是CH或N; X1是C1-C3烷基，C1-C3烷氧基或C1; X2是C1-C3烷基或C1-C3烷氧基，其制备方法和含有N-取代-3-（含氮五元环）苯磺酰胺衍生物作为活性成分的除草组合物。

公开(公告)号：US4863505A

公开(公告)日：1989-09-05

申请号：US903992

申请日：1986-09-04

申请人： Satoru Kumazawa ,  Atsushi Ito ,  Nobuo Sato ,  Toshihide Saishoji ,  Masahiro Hamada ,  Shiro Yamazaki ,  Hiroyuki Enari

发明人： Satoru Kumazawa ,  Atsushi Ito ,  Nobuo Sato ,  Toshihide Saishoji ,  Masahiro Hamada ,  Shiro Yamazaki ,  Hiroyuki Enari

IPC分类号： A01N43/50 ,  A01N43/653 ,  C07D233/58 ,  C07D233/60 ,  C07D249/08 ,  C07D521/00

CPC分类号： C07D231/12 ,  A01N43/50 ,  A01N43/653 ,  C07D233/56 ,  C07D249/08

摘要： Disclosed herein are a derivative of azole having a usefulness in controlling plant fungal diseases, in regulating plant growth and in killing weeds, a process for producing the derivative of azole and a composition having a fungicidal activity, a plant growth regulating activity and a herbicidal activity and containing the derivative of azole as an active ingredient for use in agriculture and horticulture.

摘要翻译： 本文公开了具有控制植物真菌病，调节植物生长和杀死杂草的唑类衍生物，制备唑类衍生物的方法和具有杀真菌活性，植物生长调节活性和除草活性的组合物 并含有唑类衍生物作为农业和园艺用的活性成分。

公开(公告)号：US4795484A

公开(公告)日：1989-01-03

申请号：US858531

申请日：1986-04-24

申请人： Katsumichi Aoki ,  Takafumi Shida ,  Takeo Watanabe ,  Keigo Satake ,  Hiroyasu Shinkawa ,  Shiro Yamazaki

发明人： Katsumichi Aoki ,  Takafumi Shida ,  Takeo Watanabe ,  Keigo Satake ,  Hiroyasu Shinkawa ,  Shiro Yamazaki

IPC分类号： A01N43/653 ,  C07D249/10

CPC分类号： A01N43/653 ,  C07D249/10

摘要： Disclosed herein is herbicidal composition comprising a derivative of 1,2,4-triazole as an active ingredient, represented by the general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom, a halogen atom or a C.sub.1 -C.sub.2) alkyl group; R.sup.2 represents a hydrogen atom, a halogen atom, a (C.sub.1 -C.sub.2) alkyl group fluoromethyl group (--CH.sub.2 F),3,3,3-trifluoropopyl group, methoxy group, cyano group, methoxymethyl group, methylthio group, methoxycarbonyl group or isopropoxycarbonyl group and R.sup.3 represents a thiocarbamoyl group or a group represented by the general formula (II): ##STR2## wherein R.sup.4 represents a hydrogen atom, a (C.sub.1 -C.sub.2) alkyl group or a hydroxy (C.sub.1 -C.sub.2) alkyl group and R.sup.5 represents a hydrogen atom, a C.sub.1 -C.sub.2) alkyl group, halogeno (C.sub.1 -C.sub.2) alkyl group, hydroxy (C.sub.1 -C.sub.2) alkyl group, cyanomethyl group, acetyl group, halogenoacetyl group, methoxyacetyl group, amino group, phenyl group, methoxy group, hydroxyl group, (C.sub.2 -C.sub.3) alkenyl group, halogeno (C.sub.2 -C.sub.3) alkenyl group, isopropylcarbonyl group, methylthiocarbamoyl group or 2-methoxyethyl group, the proviso that R.sup.2 is not a hydrogen atom, halogen atom or (C.sub.1 -C.sub.2) alkyl group when both of R.sup.4 and R.sup.5 represent hydrogen atoms, and herbicidally acceptable carrier(s) or diluent(s).

摘要翻译： 本文公开了包含由通式（I）表示的1,2,4-三唑衍生物作为活性成分的除草组合物：其中R1表示氢原子，卤素原子或C1- C2）烷基; R2表示氢原子，卤素原子，（C1-C2）烷基氟甲基（-CH2F），3,3,3-三氟戊酰基，甲氧基，氰基，甲氧基甲基，甲硫基，甲氧基羰基或异丙氧基羰基 基团，R 3表示硫代氨基甲酰基或由通式（II）表示的基团：其中R 4表示氢原子，（C 1 -C 2）烷基或羟基（C 1 -C 2）烷基） R5为氢原子，C1-C2）烷基，卤代（C1-C2）烷基，羟基（C1-C2）烷基，氰基甲基，乙酰基，卤代乙酰基，甲氧基乙酰基，氨基，苯基 ，甲氧基，羟基，（C2-C3）烯基，卤代（C2-C3）烯基，异丙基羰基，甲硫基氨基甲酰基或2-甲氧基乙基，条件是R2不是氢原子，卤素原子或（C1 -C 2）烷基，当R4和R5都表示氢原子，除草可接受的载体或稀释剂（ s）。