HOLOGRAPHIC RECORDING METHOD
    82.
    发明申请
    HOLOGRAPHIC RECORDING METHOD 审中-公开
    全景记录方法

    公开(公告)号:US20110228663A1

    公开(公告)日:2011-09-22

    申请号:US12880828

    申请日:2010-09-13

    IPC分类号: G11B7/00

    CPC分类号: G11B7/0065 G11B7/083

    摘要: A holographic recording method includes the following steps: irradiating an optical recording medium with a coherent reference beam and a coherent information beam to produce a hologram in the optical recording medium while irradiating the optical recording medium with an incoherent pretreatment beam to consume a polymerization inhibitor; irradiating the hologram with the reference beam to extract a reproduction beam while stopping irradiating the optical recording medium with the reference beam; sensing the signal beam with an image pick-up unit to detect an intensity of the signal beam; and calculating a bit error rate with a control unit to irradiate the hologram with the information beam if the bit error rate is larger than a prescribed value, or to stop irradiating the optical recording medium with the reference beam, the information beam and the pretreatment beam if the bit error rate is smaller than the prescribed value.

    摘要翻译: 全息记录方法包括以下步骤:用光学记录介质照射具有相干参考光束和相干信息光束的光学记录介质,以在光学记录介质中用不相干的预处理光束照射消耗阻聚剂; 用参考光束照射全息图以提取再现光束,同时停止用参考光束照射光学记录介质; 用图像拾取单元感测信号光束以检测信号光束的强度; 如果比特错误率大于规定值,则用控制单元计算与信息光束照射全息图的比特错误率,或停止用参考光束照射光学记录介质,信息光束和预处理光束 如果误码率小于规定值。

    HOLOGRAPHIC RECORDING MEDIUM
    83.
    发明申请
    HOLOGRAPHIC RECORDING MEDIUM 审中-公开
    全息记录介质

    公开(公告)号:US20100221646A1

    公开(公告)日:2010-09-02

    申请号:US12696537

    申请日:2010-01-29

    IPC分类号: G03F7/20

    摘要: A holographic recording medium includes a recording layer. The recording layer includes a framework being expressed with the following general formula (1), In the above formula (1), Ar represents a substituted or unsubstituted group selected from benzothiophene group, naphthothiophene group, dibenzothiophene group, thienothiophene group, dithienobenzene group, benzothiazole group, naphthothiazole group, benzoisothiazole group, naphthoisothiazole group, phenothiazine group, phenoxathiin group, dithianaphthalene group, thianthrene group, thioxanthene group, and bithiophene group. In addition, n is an integer from 1 to 4.

    摘要翻译: 全息记录介质包括记录层。 记录层包括用以下通式(1)表示的骨架:在上式(1)中,Ar表示取代或未取代的选自苯并噻吩基,萘并噻吩基,二苯并噻吩基,噻吩并噻吩基,二噻吩苯基,苯并噻唑基 萘并噻唑基,苯并异噻唑基,萘并噻唑基,吩噻嗪基,吩噻嗪基,二噻吩基,噻蒽基,噻吨基和双噻吩基。 另外,n为1〜4的整数。

    OPTICAL INFORMATION RECORDING AND REPRODUCING APPARATUS AND METHOD OF OPTICALLY RECORDING AND REPRODUCING INFORMATION
    84.
    发明申请
    OPTICAL INFORMATION RECORDING AND REPRODUCING APPARATUS AND METHOD OF OPTICALLY RECORDING AND REPRODUCING INFORMATION 审中-公开
    光信息记录和再现设备及光记录和再现信息的方法

    公开(公告)号:US20090080315A1

    公开(公告)日:2009-03-26

    申请号:US12233452

    申请日:2008-09-18

    IPC分类号: G11B7/00

    摘要: An optical recording and reproducing apparatus according to the present invention utilizes an angle multiplexing interfering method to record multiple pieces of recording data on an optical recording medium. Recording conditions for the multiple recording and management information such as addresses are recorded in the same book according to a coaxial interfering method. In a reproduction mode, the management information is read from a hologram formed according to the coaxial interfering method. The management information is utilized to quickly read the recording data from a hologram formed according to the angle multiplexing interfering method.

    摘要翻译: 根据本发明的光学记录和再现装置利用角度复用干扰方法将多条记录数据记录在光学记录介质上。 根据同轴干扰方法将多个记录和管理信息(诸如地址)的记录条件记录在同一本书中。 在再现模式中,从根据同轴干扰方法形成的全息图读取管理信息。 管理信息用于从根据角度复用干扰方法形成的全息图快速读取记录数据。

    Lighting device, flat-panel display device and lighting method
    88.
    发明申请
    Lighting device, flat-panel display device and lighting method 审中-公开
    照明装置,平板显示装置及照明方式

    公开(公告)号:US20060119565A1

    公开(公告)日:2006-06-08

    申请号:US11282650

    申请日:2005-11-21

    申请人: Kazuki Matsumoto

    发明人: Kazuki Matsumoto

    IPC分类号: G09G3/36

    CPC分类号: G09G3/3406 G09G2320/064

    摘要: A lighting device is provided with a number of light sources and a driving circuit. Each of the light sources includes a plurality of light emitting elements which emit respective light having different wavelengths, combines the respective light into white light, and emit the white light onto a flat display panel. The driving circuit periodically drives the light sources in accordance with driving pattern signals each corresponding to the ratio between times for which the light emitting elements emit the respective light, and shifts the phases of the driving pattern signals relative to each other for the light sources.

    摘要翻译: 照明装置设置有多个光源和驱动电路。 每个光源包括发射具有不同波长的各种光的多个发光元件,将各个光组合成白光,并将白光发射到平板显示面板上。 驱动电路根据与发光元件发射各光的时间的比例对应的驱动图案信号周期性地驱动光源,并且使驱动图案信号的相位相对于光源偏移。

    Semiconductor device and method of fabricating the same
    90.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US06614119B1

    公开(公告)日:2003-09-02

    申请号:US09521771

    申请日:2000-03-09

    IPC分类号: H01L2940

    摘要: A semiconductor device having a contact structure that can exhibit superlative step coverage without causing voids or wiring discontinuities, using aluminum or aluminum alloys as a conductive substance for via-holes. A method of fabricating the semiconductor device comprises, for at least one layer of wiring regions above the first wiring region on a semiconductor substrate, the following steps (a) to (f): (a) a step of forming a via-hole in a second interlayer dielectric formed above the first wiring region on a semiconductor substrate; (b) a degassing step for removing gaseous components included within the interlayer dielectric by a heat treatment under reduced pressure and at the substrate temperature of 300° C. to 550° C.; (c) a step of forming a wetting layer on the surface of the interlayer dielectric and the via-hole; (d) a step of cooling the substrate to a temperature of no more than 100° C.; (e) a step of forming a first aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on the wetting layer at a temperature of no more than 200° C.; and (f) a step of forming a second aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on the first aluminum layer at a temperature of at least 300° C.

    摘要翻译: 一种具有接触结构的半导体器件,其可以显示出最高级的覆盖范围,而不引起空隙或接线不连续性,使用铝或铝合金作为通孔的导电物质。 制造半导体器件的方法包括:对于在半导体衬底上的第一布线区域上方的布线区域中的至少一层的以下步骤(a)至(f):(a)形成通孔的步骤 形成在半导体衬底上的第一布线区域上方的第二层间电介质; (b)通过减压热处理和基板温度在300℃至550℃下除去层间电介质中包含的气体组分的脱气步骤; (c)在层间电介质和通孔的表面上形成润湿层的步骤; (d)将基板冷却至不超过100℃的温度; (e)在不超过200℃的温度下形成包含铝和合金中的铝的第一铝层的步骤,其中铝是润湿层上的主要成分; 以及(f)在至少300℃的温度下形成第一铝层的步骤,所述第二铝层包括铝和合金之一,其中铝是第一铝层上的主要成分。