公开(公告)号：US20110156095A1

公开(公告)日：2011-06-30

申请号：US12977755

申请日：2010-12-23

申请人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H01L29/739

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/4236

摘要： A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.

摘要翻译： 半导体部件包括第一导电类型的第一发射极区域，第二导电类型的第二发射极区域，布置在第一和第二发射极区域之间的第一基极区域和第一控制结构。 第一控制结构包括布置在第一发射区附近的控制电极，控制电极通过第一介电层与第一发射区绝缘，并沿着半导体部件的电流流动方向延伸。 第一控制结构包括第一控制连接和布置在第一控制连接和控制电极之间并且包括半导体材料的至少一个第一连接区域。

公开(公告)号：US20080246055A1

公开(公告)日：2008-10-09

申请号：US11867411

申请日：2007-10-04

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Armin Willmeroth

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Armin Willmeroth

IPC分类号： H01L29/739 ,  H01L29/78 ,  H01L21/331

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/16 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/66128 ,  H01L29/66348 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7397 ,  H01L29/861 ,  H01L29/8611

摘要： A semiconductor component comprising a monocrystalline semiconductor body, and to a method for producing the same is disclosed. In one embodiment, the semiconductor body has a semiconductor component structure with regions of a porous-mono crystalline semiconductor.

摘要翻译： 公开了一种包括单晶半导体本体的半导体元件及其制造方法。 在一个实施例中，半导体本体具有具有多孔 - 单晶半导体区域的半导体部件结构。

公开(公告)号：US20070278472A1

公开(公告)日：2007-12-06

申请号：US11757451

申请日：2007-06-04

申请人： Anton Mauder ,  Hans-Peter Felsl ,  Manfred Pfaffenlehner ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Peter Felsl ,  Manfred Pfaffenlehner ,  Hans-Joachim Schulze

IPC分类号： H01L29/06

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L29/063 ,  H01L29/7395 ,  H01L29/74

摘要： A semiconductor component includes a semiconductor body and a second semiconductor zone of a first conductivity type that serves as a rear side emitter. The second semiconductor zone is preceded by a plurality of third semiconductor zones of a second conductivity type that is opposite to the first conductivity type. The third semiconductor zones are spaced apart from one another in a lateral direction. In addition, provided within the semiconductor body is a field stop zone spaced apart from the second semiconductor zone, thereby reducing an electric field in the direction toward the second semiconductor zone.

摘要翻译： 半导体部件包括半导体主体和用作后侧发射极的第一导电类型的第二半导体区。 第二半导体区域之前是与第一导电类型相反的多个第二导电类型的第三半导体区域。 第三半导体区域在横向彼此间隔开。 此外，设置在半导体本体内的是与第二半导体区间隔开的场阻挡区域，从而减小朝向第二半导体区域的方向的电场。

公开(公告)号：US20060286753A1

公开(公告)日：2006-12-21

申请号：US11423026

申请日：2006-06-08

申请人： Reiner Barthelmess ,  Anton Mauder ,  Franz Niedernostheide ,  Hans-Joachim Schulze

发明人： Reiner Barthelmess ,  Anton Mauder ,  Franz Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L21/336

CPC分类号： H01L29/0834 ,  H01L21/263 ,  H01L21/324 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/861

摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件的方法，具有以下方法步骤：提供具有第一和第二侧的半导体本体和第一导电类型的基本掺杂， 半导体本体通过一个侧面具有质子，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中，从而进行热处理，其中半导体主体被加热到预定的 温度预定的持续时间，选择温度和持续时间，使得在照射侧的方向上在第一区域和邻近第一区域的第二区域中产生氢诱导的供体。

公开(公告)号：US20060030126A1

公开(公告)日：2006-02-09

申请号：US11166768

申请日：2005-06-24

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

IPC分类号： H01L21/78 ,  H01L21/301 ,  H01L21/46

CPC分类号： H01L21/26506 ,  H01L21/263 ,  H01L21/78 ,  H01L29/167

摘要： A method for producing semiconductor elements comprises forming a hydrogen-correlated doping in a treatment region The treatment region comprises at least part of a region which (i) lies outside an inner contiguous zone containing an integrated semiconductor circuit arrangement but not the respective associated separating zones and (ii) lies within an outer contiguous zone containing the respective integrated semiconductor circuit arrangement (10) and also the respective associated separating zones.

摘要翻译： 一种用于制造半导体元件的方法包括在处理区域中形成氢相关掺杂。处理区域包括至少部分区域（i）位于包含集成半导体电路布置的内连续区域之外的区域，但不包括各自相关联的分离区 和（ii）位于包含相应的集成半导体电路装置（10）的外部连续区域中，以及相应的相关联的分离区域。

公开(公告)号：US20050161746A1

公开(公告)日：2005-07-28

申请号：US11023040

申请日：2004-12-23

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

IPC分类号： H01L29/08 ,  H01L29/739 ,  H01L29/861 ,  H01L31/109

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/861

摘要： A semiconductor diode (1, 1′) has an anode (2), a cathode (3) and a semiconductor volume (7) provided between anode (2) and cathode (3). A plurality of semiconductor zones (81 to 84) are formed in the semiconductor volume (7), which semiconductor zones are inversely doped with respect to their immediate surroundings, spaced apart from one another and provided in the vicinity of the cathode (3). The semiconductor zones are spaced apart from the cathode (3).

摘要翻译： 半导体二极管（1,1'）具有设置在阳极（2）和阴极（3）之间的阳极（2），阴极（3）和半导体体积（7）。 在半导体体积（7）中形成有多个半导体区域（81〜84），该半导体区域相对于它们的紧邻环境相反地被掺杂，彼此间隔开并设置在阴极（3）附近。 半导体区域与阴极（3）间隔开。

公开(公告)号：US09214521B2

公开(公告)日：2015-12-15

申请号：US13529185

申请日：2012-06-21

申请人： Dorothea Werber ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Carsten Schaeffer ,  Volodymyr Komarnitskyy ,  Anton Mauder

发明人： Dorothea Werber ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Carsten Schaeffer ,  Volodymyr Komarnitskyy ,  Anton Mauder

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L29/32 ,  H01L29/861 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/167 ,  H01L21/265 ,  H01L29/40 ,  H01L29/417 ,  H01L29/10

CPC分类号： H01L29/32 ,  H01L21/26506 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/423 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/8611

摘要： A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means.

摘要翻译： 半导体器件包括第一导电类型的第一发射极区域，与第一类型互补的第二导电类型的第二发射极区域，第二导电类型的漂移区域和第一电极。 第一和第二发射极区域布置在漂移区域和第一电极之间，并且每个连接到第一电极。 单元区域的器件单元包括邻接漂移区的第一导电类型的主体区域，与身体区域邻接的第二导电类型的源极区域和与身体区域相邻并且与身体区域电介质绝缘的栅电极， 栅极电介质。 第二电极电连接到源区和体区。 第一导电类型的寄生区域设置在单元区域的外部，并且包括至少一个带有载流子寿命减少装置的区段。

公开(公告)号：US08921931B2

公开(公告)日：2014-12-30

申请号：US13487540

申请日：2012-06-04

申请人： Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

发明人： Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/861 ,  H01L21/761 ,  H01L21/76224 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/872

摘要： A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.

摘要翻译： 半导体器件的半导体本体包括第一导电类型的掺杂层和第二导电类型的一个或多个掺杂区。 一个或多个掺杂区形成在半导体本体的掺杂层和第一表面之间。 沟槽结构从第一和第二相对表面之一延伸到半导体本体中。 沟槽结构布置在彼此电连接的半导体本体的部分之间。 沟槽结构可以被布置用于减轻机械应力，局部地控制电荷载流子迁移率，局部地控制电荷载流子复合速率和/或成形掩埋扩散区。

公开(公告)号：US08883612B2

公开(公告)日：2014-11-11

申请号：US13229861

申请日：2011-09-12

申请人： Hans-Joachim Schulze ,  Francisco Javier Santos Rodriguez ,  Anton Mauder ,  Johannes Baumgartl ,  Carsten Ahrens

发明人： Hans-Joachim Schulze ,  Francisco Javier Santos Rodriguez ,  Anton Mauder ,  Johannes Baumgartl ,  Carsten Ahrens

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/324 ,  H01L21/265 ,  H01L29/16

CPC分类号： H01L21/3223 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02664 ,  H01L21/0475 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/3247 ,  H01L29/1608

摘要： A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment.

公开(公告)号：US08779509B2

公开(公告)日：2014-07-15

申请号：US13539959

申请日：2012-07-02

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Franz Hirler

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Franz Hirler

IPC分类号： H01L21/14

CPC分类号： H01L29/086 ,  H01L21/265 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/8611

摘要： A semiconductor device includes a doped layer which contains a first dopant of a first conductivity type. In the doped layer, a counter-doped zone is formed in an edge area that surrounds an element area of the semiconductor device. The counter-doped zone contains at least the first dopant and a second dopant of a second conductivity type, which is the opposite of the first conductivity type. A concentration of the second dopant is at least 20% and at most 100% of a concentration of the first dopant. The dopants in the counter-doped zone decrease charge carrier mobility and minority carrier lifetime such that the dynamic robustness of the semiconductor device is increased.

摘要翻译： 半导体器件包括含有第一导电类型的第一掺杂剂的掺杂层。 在掺杂层中，在围绕半导体器件的元件区域的边缘区域中形成反掺杂区域。 反掺杂区至少包含与第一导电类型相反的第二导电类型的第一掺杂剂和第二掺杂剂。 第二掺杂剂的浓度为第一掺杂剂的浓度的至少20％且至多100％。 反掺杂区中的掺杂剂降低了载流子迁移率和少数载流子寿命，从而提高了半导体器件的动态鲁棒性。