Method and apparatus for the compensation of an additive signal in a data signal
    81.
    发明授权
    Method and apparatus for the compensation of an additive signal in a data signal 失效
    用于补偿数据信号中的附加信号的方法和装置

    公开(公告)号:US06219192B1

    公开(公告)日:2001-04-17

    申请号:US09179148

    申请日:1998-10-26

    IPC分类号: G11B502

    摘要: The method and apparatus have application to the compensation of transient signals produced on reading a data storage device with a magneto-resistive head due to thermal contact with asperities on the data storage medium. Preferably, the data channel employs partial-response maximum-likelihood detection. The method compensates for an additive signal in a data signal and comprises the steps of: detecting the contribution to said data signal by said additive signal; initially compensating the data signal by maintaining a DC offset in said data signal, the initial level of said DC offset being set in dependence on the detected contribution; and while compensating the data signal, detecting when the compensated data signal exceeds a predetermined threshold and varying the set level of said DC offset in dependence upon said detection.

    摘要翻译: 该方法和装置可应用于由于与数据存储介质上的粗糙度的热接触而使用磁阻头读取数据存储装置时产生的瞬态信号的补偿。 优选地,数据信道采用部分响应最大似然检测。该方法补偿数据信号中的加法信号,并且包括以下步骤:通过所述加法信号检测对所述数据信号的贡献; 通过维持所述数据信号中的DC偏移来初始地补偿数据信号,根据检测到的贡献来设置所述DC偏移的初始电平; 并且在补偿数据信号的同时,检测补偿数据信号何时超过预定阈值,并根据所述检测改变所述DC偏移的设定电平。

    Method for planarizing high step-height integrated circuit structures
    82.
    发明授权
    Method for planarizing high step-height integrated circuit structures 失效
    平面化高步高集成电路结构的方法

    公开(公告)号:US5674773A

    公开(公告)日:1997-10-07

    申请号:US616897

    申请日:1996-03-15

    申请人: Chao-Ming Koh Bin Liu

    发明人: Chao-Ming Koh Bin Liu

    IPC分类号: H01L21/3105 H01L21/70

    CPC分类号: H01L21/31051

    摘要: A method for planarizing a high step-height integrated circuit structure within an integrated circuit. There is first formed upon a semiconductor substrate a high step-height integrated circuit structure. Formed then adjoining the high step-height integrated circuit structure is a patterned Global Planarization Dielectric (GPD) layer. There is then formed upon the exposed surfaces of the semiconductor substrate, the high step-height integrated circuit structure and the patterned Global Planarization Dielectric (GPD) layer a reflowable dielectric layer. Finally, the reflowable dielectric layer is reflowed.

    摘要翻译: 一种用于在集成电路内平坦化高阶高度集成电路结构的方法。 首先在半导体衬底上形成高步高集成电路结构。 形成,然后毗邻高步高集成电路结构是一个图案化的全球平面介电(GPD)层。 然后形成在半导体衬底的暴露表面,高阶高度集成电路结构和图案化全局平面化电介质(GPD)层的可回流电介质层上。 最后,可回流介电层被回流。

    Multiple exposure method for photo-exposing photosensitive layers upon
high step height topography substrate layers
    83.
    发明授权
    Multiple exposure method for photo-exposing photosensitive layers upon high step height topography substrate layers 失效
    在高阶高度地形基底层上曝光感光层的多重曝光方法

    公开(公告)号:US5631112A

    公开(公告)日:1997-05-20

    申请号:US726033

    申请日:1996-10-07

    IPC分类号: G03F7/20 G03F9/00

    CPC分类号: G03F7/70475 G03F7/2022

    摘要: A method for photo-exposing a blanket conformal photosensitive layer upon a high step height topography substrate layer. There is first provided a high step height topography substrate layer having a blanket conformal photosensitive layer formed thereupon. The high step height topography substrate layer has a first region having a first step height separated from a third region having a third step height by a second region having a second step height. The second step height is intermediate to the first step height and the third step height. The blanket conformal photosensitive layer is photo-exposed to form a first pattern upon the first region and the second region through use of a first reticle and a first photo-exposure condition. The first photo-exposure condition provides a first depth of focus suitable for at least the first region. In a separate process step, the blanket conformal photosensitive layer is photo-exposed to form a second pattern upon the second region and the third region through use of a second reticle and a second photo-exposure condition. The second photo-exposure condition provides a second depth of focus suitable for at least the third region. The first pattern upon the second region and the second pattern upon the second region overlap.

    摘要翻译: 一种用于在高阶高度地形衬底层上曝光毯状保形感光层的方法。 首先提供了具有在其上形成的覆盖层保形感光层的高阶高度地形基底层。 高台阶高度地形基底层具有第一区域,第一区域具有与具有第三台阶高度的第三区域分离的第一台阶高度与具有第二台阶高度的第二区域。 第二步高度处于第一步高度和第三步高度的中间。 通过使用第一掩模版和第一光曝光条件,在第一区域和第二区域上曝光毯状保形感光层以形成第一图案。 第一曝光条件提供适于至少第一区域的第一焦点深度。 在单独的工艺步骤中,通过使用第二掩模版和第二曝光条件,在第二区域和第三区域上曝光毯状保形光敏层以形成第二图案。 第二曝光条件提供适于至少第三区域的第二焦点深度。 第二区域上的第一图案和第二区域上的第二图案重叠。

    Card box
    84.
    外观设计
    Card box 有权

    公开(公告)号:USD1043335S1

    公开(公告)日:2024-09-24

    申请号:US29856527

    申请日:2022-10-14

    申请人: Bin Liu

    设计人: Bin Liu

    摘要: FIG. 1 is a front, right and top perspective view of a card box showing my new design;
    FIG. 2 is a rear, left and bottom perspective view thereof;
    FIG. 3 is a front view thereof;
    FIG. 4 is a rear view thereof;
    FIG. 5 is a left view thereof;
    FIG. 6 is a right view thereof;
    FIG. 7 is a top view thereof;
    FIG. 8 is a bottom view thereof;
    FIG. 9 is a partially exploded perspective view thereof, showing a top portion removed, and a middle portion and a bottom portion assembled;
    FIG. 10 is an exploded perspective view thereof, showing a top, middle and a bottom portion; and,
    FIG. 11 is an exploded perspective view thereof, showing a middle portion in an unfolded condition.

    Step machine
    85.
    外观设计

    公开(公告)号:USD1025241S1

    公开(公告)日:2024-04-30

    申请号:US29896447

    申请日:2023-07-04

    申请人: Bin Liu

    设计人: Bin Liu

    摘要: FIG. 1 is a front perspective view of a step machine, showing my new design;
    FIG. 2 is a rear perspective view thereof;
    FIG. 3 is a front elevational view thereof;
    FIG. 4 is a rear elevational view thereof;
    FIG. 5 is a left side view thereof, the right side view thereof being a mirror image of FIG. 5;
    FIG. 6 is a top plan view thereof;
    FIG. 7 is a partial enlarged view of FIG. 1;
    FIG. 8 is a partial enlarged view of FIG. 1;
    FIG. 9 is a partial enlarged view of FIG. 2;
    FIG. 10 is a partial enlarged view of FIG. 2;
    FIG. 11 is a partial enlarged view of FIG. 3; and,
    FIG. 12 is a partial enlarged view of FIG. 5.
    The dashed lines in the figures are for the purpose of illustrating portions of the step machine, which form no part of the claimed design.
    The dash-dot-dot lines in the FIGS. 2 and 4 are for the purpose of illustrating portions of the step machine, which form no part of the claimed design.
    The dash-dot-dash lines are for annotating enlarged views, which form no part of the claimed design.

    Multifunctional fitness frame with reversible pedal structure

    公开(公告)号:US11911650B1

    公开(公告)日:2024-02-27

    申请号:US18212728

    申请日:2023-06-22

    申请人: Bin Liu

    发明人: Bin Liu

    IPC分类号: A63B21/00

    摘要: The present invention provides a multifunctional fitness frame with a reversible pedal structure, which comprises a main frame, a pull ring arranged on the main frame and a pedal arranged on the main frame, wherein the pedal is arranged on the main frame in a reversible manner, and a support tube and a rotating shaft are also penetrated on the main frame; the pedal is turned over by the rotating shaft and leans against the support tube to facilitate the user to practice paddling; and the pedal can also be turned over and leaned against the ground by the rotating shaft to realize storage, so that the user can practice other actions conveniently.

    Garden hose holder
    87.
    外观设计

    公开(公告)号:USD951756S1

    公开(公告)日:2022-05-17

    申请号:US29787617

    申请日:2021-06-08

    申请人: Bin Liu

    设计人: Bin Liu

    Garden hose holder
    88.
    外观设计

    公开(公告)号:USD951755S1

    公开(公告)日:2022-05-17

    申请号:US29786686

    申请日:2021-06-02

    申请人: Bin Liu

    设计人: Bin Liu

    System and method for calibrated spectral domain optical coherence tomography and low coherence interferometry
    89.
    发明授权
    System and method for calibrated spectral domain optical coherence tomography and low coherence interferometry 有权
    校准频域光学相干断层扫描和低相干干涉测量的系统和方法

    公开(公告)号:US09506740B2

    公开(公告)日:2016-11-29

    申请号:US13513052

    申请日:2010-12-01

    摘要: Systems and methods for enhancing spectral domain optical coherence tomography (OCT] are provided. In particular, a system and method for calibration of spectral interference signals using an acquired calibration signal are provided. The calibration signal may be logarithmically amplified to further improve the accuracy of the calibration. From the calibration signal, a series of more accurate calibration data are calculated. An acquired spectral interference signal is calibrated using these calibration data. Moreover, systems that include logarithmic amplification of the spectral interference signal and variable band-pass filtering of the spectral interference signal are provided. Such systems increase the dynamic range and visualization capabilities relative to conventional spectral domain OCT systems.

    摘要翻译: 提供了增强频域光学相干断层扫描(OCT)的系统和方法,特别提供了一种使用采集的校准信号校准光谱干扰信号的系统和方法,校准信号可以对数放大,以进一步提高 校准,从校准信号中计算出一系列更准确的校准数据,采用这些校准数据对采集到的光谱干涉信号进行校准,而且包括频谱干扰信号的对数放大和可变带通滤波的系统 提供了光谱干扰信号,相对于常规光谱域OCT系统,这种系统增加了动态范围和可视化能力。

    Semiconductor Devices Having Gate Structures and Methods of Manufacturing the Same
    90.
    发明申请
    Semiconductor Devices Having Gate Structures and Methods of Manufacturing the Same 有权
    具有门结构的半导体器件及其制造方法

    公开(公告)号:US20160087098A1

    公开(公告)日:2016-03-24

    申请号:US14859447

    申请日:2015-09-21

    摘要: Semiconductor devices are provided including an active layer, a gate structure, a spacer, and a source/drain layer. The active layer is on the substrate and includes germanium. The active layer includes a first region having a first germanium concentration, and a second region on both sides of the first region. The second region has a top surface getting higher from a first portion of the second region adjacent to the first region toward a second portion of the second region far from the first region, and has a second germanium concentration less than the first germanium concentration. The gate structure is formed on the first region of the active layer. The spacer is formed on the second region of the active layer, and contacts a sidewall of the gate structure. The source/drain layer is adjacent to the second region of the active layer.

    摘要翻译: 提供了包括有源层,栅极结构,间隔物和源极/漏极层的半导体器件。 有源层在基底上,包括锗。 有源层包括具有第一锗浓度的第一区域和位于第一区域两侧的第二区域。 第二区域具有从与第一区域相邻的第二区域的第一部分朝向远离第一区域的第二区域的第二部分更高的顶表面,并且具有小于第一锗浓度的第二锗浓度。 栅极结构形成在有源层的第一区域上。 间隔物形成在有源层的第二区域上,并与门结构的侧壁接触。 源极/漏极层与有源层的第二区域相邻。