摘要:
The method and apparatus have application to the compensation of transient signals produced on reading a data storage device with a magneto-resistive head due to thermal contact with asperities on the data storage medium. Preferably, the data channel employs partial-response maximum-likelihood detection. The method compensates for an additive signal in a data signal and comprises the steps of: detecting the contribution to said data signal by said additive signal; initially compensating the data signal by maintaining a DC offset in said data signal, the initial level of said DC offset being set in dependence on the detected contribution; and while compensating the data signal, detecting when the compensated data signal exceeds a predetermined threshold and varying the set level of said DC offset in dependence upon said detection.
摘要:
A method for planarizing a high step-height integrated circuit structure within an integrated circuit. There is first formed upon a semiconductor substrate a high step-height integrated circuit structure. Formed then adjoining the high step-height integrated circuit structure is a patterned Global Planarization Dielectric (GPD) layer. There is then formed upon the exposed surfaces of the semiconductor substrate, the high step-height integrated circuit structure and the patterned Global Planarization Dielectric (GPD) layer a reflowable dielectric layer. Finally, the reflowable dielectric layer is reflowed.
摘要:
A method for photo-exposing a blanket conformal photosensitive layer upon a high step height topography substrate layer. There is first provided a high step height topography substrate layer having a blanket conformal photosensitive layer formed thereupon. The high step height topography substrate layer has a first region having a first step height separated from a third region having a third step height by a second region having a second step height. The second step height is intermediate to the first step height and the third step height. The blanket conformal photosensitive layer is photo-exposed to form a first pattern upon the first region and the second region through use of a first reticle and a first photo-exposure condition. The first photo-exposure condition provides a first depth of focus suitable for at least the first region. In a separate process step, the blanket conformal photosensitive layer is photo-exposed to form a second pattern upon the second region and the third region through use of a second reticle and a second photo-exposure condition. The second photo-exposure condition provides a second depth of focus suitable for at least the third region. The first pattern upon the second region and the second pattern upon the second region overlap.
摘要:
FIG. 1 is a front, right and top perspective view of a card box showing my new design; FIG. 2 is a rear, left and bottom perspective view thereof; FIG. 3 is a front view thereof; FIG. 4 is a rear view thereof; FIG. 5 is a left view thereof; FIG. 6 is a right view thereof; FIG. 7 is a top view thereof; FIG. 8 is a bottom view thereof; FIG. 9 is a partially exploded perspective view thereof, showing a top portion removed, and a middle portion and a bottom portion assembled; FIG. 10 is an exploded perspective view thereof, showing a top, middle and a bottom portion; and, FIG. 11 is an exploded perspective view thereof, showing a middle portion in an unfolded condition.
摘要:
FIG. 1 is a front perspective view of a step machine, showing my new design; FIG. 2 is a rear perspective view thereof; FIG. 3 is a front elevational view thereof; FIG. 4 is a rear elevational view thereof; FIG. 5 is a left side view thereof, the right side view thereof being a mirror image of FIG. 5; FIG. 6 is a top plan view thereof; FIG. 7 is a partial enlarged view of FIG. 1; FIG. 8 is a partial enlarged view of FIG. 1; FIG. 9 is a partial enlarged view of FIG. 2; FIG. 10 is a partial enlarged view of FIG. 2; FIG. 11 is a partial enlarged view of FIG. 3; and, FIG. 12 is a partial enlarged view of FIG. 5. The dashed lines in the figures are for the purpose of illustrating portions of the step machine, which form no part of the claimed design. The dash-dot-dot lines in the FIGS. 2 and 4 are for the purpose of illustrating portions of the step machine, which form no part of the claimed design. The dash-dot-dash lines are for annotating enlarged views, which form no part of the claimed design.
摘要:
The present invention provides a multifunctional fitness frame with a reversible pedal structure, which comprises a main frame, a pull ring arranged on the main frame and a pedal arranged on the main frame, wherein the pedal is arranged on the main frame in a reversible manner, and a support tube and a rotating shaft are also penetrated on the main frame; the pedal is turned over by the rotating shaft and leans against the support tube to facilitate the user to practice paddling; and the pedal can also be turned over and leaned against the ground by the rotating shaft to realize storage, so that the user can practice other actions conveniently.
摘要:
Systems and methods for enhancing spectral domain optical coherence tomography (OCT] are provided. In particular, a system and method for calibration of spectral interference signals using an acquired calibration signal are provided. The calibration signal may be logarithmically amplified to further improve the accuracy of the calibration. From the calibration signal, a series of more accurate calibration data are calculated. An acquired spectral interference signal is calibrated using these calibration data. Moreover, systems that include logarithmic amplification of the spectral interference signal and variable band-pass filtering of the spectral interference signal are provided. Such systems increase the dynamic range and visualization capabilities relative to conventional spectral domain OCT systems.
摘要:
Semiconductor devices are provided including an active layer, a gate structure, a spacer, and a source/drain layer. The active layer is on the substrate and includes germanium. The active layer includes a first region having a first germanium concentration, and a second region on both sides of the first region. The second region has a top surface getting higher from a first portion of the second region adjacent to the first region toward a second portion of the second region far from the first region, and has a second germanium concentration less than the first germanium concentration. The gate structure is formed on the first region of the active layer. The spacer is formed on the second region of the active layer, and contacts a sidewall of the gate structure. The source/drain layer is adjacent to the second region of the active layer.