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135 条记录 (耗时 0.024 秒)

    Method for anisotropic plasma etching of semiconductors
    81.
    发明授权
    Method for anisotropic plasma etching of semiconductors 有权
    半导体各向异性等离子体蚀刻方法

    公开(公告)号：US06720268B1

    公开(公告)日：2004-04-13

    申请号：US09720758

    申请日：2000-12-28

    申请人： Franz Laermer ,  Andrea Schilp

    发明人： Franz Laermer ,  Andrea Schilp

    IPC分类号： H01L21311

    CPC分类号： B81C1/00626 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0142 ,  H01L21/3065 ,  H01L21/30655

    摘要： A method of anisotropic etching of structures in a semiconductor body, in particular of recesses in a silicon body (18) exactly defined laterally by an etching mask, by using a plasma (28) is proposed. An ion acceleration voltage induced in particular by a high-frequency AC voltage is applied to the semiconductor body at least during an etching step having a predefined duration. The duration of the etching step is further subdivided into at least two etching segments between which the ion acceleration voltage applied is modified each time. Preferably two etching segments are provided, a higher acceleration voltage being used during the first etching segment than during the second etching step. The length of the first etching segment can furthermore be determined dynamically or statically during the etching steps using a device for the detection of a polymer breakdown. In order to generate and adjust the value of the acceleration voltage, preferably high-frequency pulses or pulse packets having an adjustable pulse/pause ratio are used.

    摘要翻译： 提出了通过使用等离子体（28）在半导体本体中特别是通过蚀刻掩模横向确定的硅体（18）中的凹部的各向异性蚀刻方法。 至少在具有预定持续时间的蚀刻步骤期间，将特别由高频AC电压引起的离子加速电压施加到半导体本体。 蚀刻步骤的持续时间进一步细分为至少两个蚀刻段，每个蚀刻段之间每次修改施加的离子加速电压。 优选地，提供两个蚀刻段，在第一蚀刻段期间比在第二蚀刻步骤期间使用更高的加速电压。 此外，可以在使用用于检测聚合物击穿的装置的蚀刻步骤期间动态地或静态地确定第一蚀刻段的长度。 为了产生和调整加速电压的值，优选使用具有可调脉冲/暂停比的高频脉冲或脉冲数据包。

    Device and method for etching a substrate by using an inductively coupled plasma
    82.
    发明授权
    Device and method for etching a substrate by using an inductively coupled plasma 有权
    通过使用电感耦合等离子体蚀刻衬底的装置和方法

    公开(公告)号：US06709546B2

    公开(公告)日：2004-03-23

    申请号：US09871224

    申请日：2001-05-31

    申请人： Klaus Breitschwerdt ,  Volker Becker ,  Franz Laermer ,  Andrea Schilp

    发明人： Klaus Breitschwerdt ,  Volker Becker ,  Franz Laermer ,  Andrea Schilp

    IPC分类号： H01L21306

    CPC分类号： H01J37/321 ,  H01J37/3266 ,  H01L21/3065

    摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

    摘要翻译： 通过使用电感耦合等离子体来蚀刻衬底，特别是硅体的器件和方法。 使用ICP源产生高频电磁交变场，通过反应气体中的高频电磁交变场的作用产生由反应性粒子构成的感应耦合等离子体。 此外，在基板和ICP源之间产生静态或时间可变的磁场，为此目的提供了一个彼此排列的至少两个磁场线圈。 所得磁场的方向也大致平行于连接衬底和电感耦合等离子体的连接线限定的方向。 最后，利用第一磁场线圈产生第一分量磁场，并且利用第二磁场线圈产生同等强度的第二分量磁场，所述双分量磁场取向为相反方向。

    Method and apparatus for anisotropic etching of substrates
    83.
    发明授权
    Method and apparatus for anisotropic etching of substrates 有权
    用于各向异性蚀刻基板的方法和装置

    公开(公告)号：US06214161B1

    公开(公告)日：2001-04-10

    申请号：US09129903

    申请日：1998-08-06

    申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

    发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

    IPC分类号： H01L21302

    CPC分类号： H01J37/32623 ,  H01J2237/3345 ,  H01L21/3065

    摘要： Method, apparatus and plasma processing system for anisotropic etching of a substrate using a plasma. A high-frequency alternating electromagnetic field is generated using an inductive coupled plasma source, and a reactive gas or reactive gas mixture is exposed to that high-frequency alternating electromagnetic field in order to generate the plasma. The electrically charged particles of the plasma are accelerated onto the substrate. An aperture having at least one effective surface for electron-ion recombination is inserted between the plasma source and the substrate.

    摘要翻译： 使用等离子体对基板进行各向异性蚀刻的方法，装置和等离子体处理系统。 使用感应耦合等离子体源产生高频交变电磁场，并且将反应性气体或反应气体混合物暴露于该高频交变电磁场以产生等离子体。 等离子体的带电粒子被加速到衬底上。 具有至少一个用于电子 - 离子复合的有效表面的孔插入等离子体源和衬底之间。

    Method for anisotropic plasma etching of substrates
    85.
    发明授权
    Method for anisotropic plasma etching of substrates 失效
    基板各向异性等离子体蚀刻方法

    公开(公告)号：US5498312A

    公开(公告)日：1996-03-12

    申请号：US243783

    申请日：1994-05-17

    申请人： Franz Laermer ,  Andrea Schilp

    发明人： Franz Laermer ,  Andrea Schilp

    IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00 ,  H05H1/00

    CPC分类号： B81C1/00531 ,  H01J37/32192 ,  H01L21/30655 ,  H01J2237/3347

    摘要： A method for anisotropic plasma etching of silicon substrates, a plasma etching apparatus for implementing the method, and an electronic device manufactured according to the method, which method includes the steps of positioning a substrate having a surface to be depleted by etching within a processing chamber and in communication with an electrode; introducing a gas mixture including an etching gas and a passivating gas which are essentially free of chlorine, bromine or iodine into the processing chamber, the etching gas including at least one halogen or halogen compound and the passivating gas including at least one polymer-generating monomer; exciting the gas mixture with electromagnetic radiation effective to produce a plasma containing ions; and applying a voltage to one of the substrate or the electrode to accelerate the ions toward the substrate and provide the ions with an energy ranging from about 1 to about 40 eV, preferably from about 10 to about 30 eV, when the ions impinge on the surface of the substrate.

    摘要翻译： 一种用于硅衬底的各向异性等离子体蚀刻的方法，用于实现该方法的等离子体蚀刻装置和根据该方法制造的电子器件，该方法包括以下步骤：将具有待蚀刻表面的衬底定位在处理室内 并与电极连通; 将包括基本上不含氯，溴或碘的蚀刻气体和钝化气体的气体混合物引入到处理室中，所述蚀刻气体包括至少一种卤素或卤素化合物，所述钝化气体包括至少一种聚合物产生单体 ; 用电磁辐射激发气体混合物，有效地产生含有离子的等离子体; 以及向所述衬底或所述电极之一施加电压以将所述离子加速到所述衬底，并且当所述离子撞击到所述衬底上时，向所述离子提供约1至约40eV，优选约10至约30eV的能量 基板的表面。

    Method for manufacturing a micropump and micropump
    87.
    发明授权
    Method for manufacturing a micropump and micropump 有权
    微型泵和微型泵的制造方法

    公开(公告)号：US08607450B2

    公开(公告)日：2013-12-17

    申请号：US12811936

    申请日：2008-12-17

    申请人： Julia Cassemeyer ,  Michael Stumber ,  Franz Laermer ,  Ralf Reichenbach

    发明人： Julia Cassemeyer ,  Michael Stumber ,  Franz Laermer ,  Ralf Reichenbach

    IPC分类号： B23P17/00

    CPC分类号： F04B43/043 ,  F04B19/006

    摘要： A method for manufacturing a micropump, which may be for the metered delivery of insulin, multiple layers being situated on the front side of a first carrier layer, which has a front side and a rear side, and microfluidic functional elements being formed by structuring at least one of the layers. It is provided that the structuring of the at least one layer for manufacturing all microfluidic functional elements is exclusively performed by front side structuring. Furthermore, a micropump is disclosed.

    摘要翻译： 一种制造微型泵的方法，该微型泵可以用于计量输送胰岛素，多层位于具有前侧和后侧的第一载体层的前侧，微流体功能元件通过在 至少一层。 提供用于制造所有微流控功能元件的至少一层的结构化仅通过前端结构进行。 此外，公开了一种微型泵。