公开(公告)号：US20150192818A1

公开(公告)日：2015-07-09

申请号：US14665432

申请日：2015-03-23

Applicant: International Business Machines Corporation

Inventor： Minhua Lu ,  Qinghuang Lin ,  Robert L. Wisnieff

IPC: G02F1/1343

CPC classification number: G02F1/134363 ,  G02F1/133707 ,  G02F1/134336 ,  G02F1/13439

Abstract: A structure includes a first substrate having a first surface and a second substrate having a second surface facing the first surface; liquid crystal material disposed between the first and second surfaces; a first upstanding electrode disposed over the first surface and extending into the liquid crystal material towards the second surface; and a first planar electrode disposed upon the first surface and electrically connected with the first upstanding electrode. The first planar electrode at least partially surrounds the first upstanding electrode. A combination of the first upstanding electrode and the first planar electrode forms at least a portion of a pixel of a liquid crystal display. Various methods to fabricate the structure are also disclosed.

Abstract translation: 一种结构包括具有第一表面的第一基底和具有面向第一表面的第二表面的第二基底; 设置在第一和第二表面之间的液晶材料; 第一直立电极，设置在第一表面上并延伸到液晶材料朝向第二表面; 以及设置在所述第一表面上并与所述第一直立电极电连接的第一平面电极。 第一平面电极至少部分地围绕第一直立电极。 第一直立电极和第一平面电极的组合形成液晶显示器的像素的至少一部分。 还公开了制造结构的各种方法。

公开(公告)号：US20150189743A1

公开(公告)日：2015-07-02

申请号：US14644416

申请日：2015-03-11

Applicant: International Business Machines Corporation

Inventor： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

IPC: H05K1/03

CPC classification number: H05K1/0326 ,  C09D183/04 ,  C09D183/14 ,  H01B3/307 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76814 ,  H05K2201/0162

Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.

Abstract translation: 倍半硅氧烷聚合物，负色调可光图案化电介质配方中的倍半硅氧烷聚合物，使用含有倍半硅氧烷聚合物的负色调可光图案化电介质配方形成结构的方法，以及由倍半硅氧烷聚合物制成的结构。

公开(公告)号：US08946371B2

公开(公告)日：2015-02-03

申请号：US13742465

申请日：2013-01-16

Applicant: International Business Machines Corporation

Inventor： Phillip J. Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Jitendra S. Rathore ,  Ratnam Sooriyakumaran

IPC: C08G77/14 ,  H01L23/532 ,  C07F7/21 ,  C08L83/14 ,  G03F7/075 ,  G03F7/40 ,  H01L21/02 ,  H01L21/31 ,  H01L21/768 ,  C08G77/50 ,  G03F7/004

CPC classification number: H01L23/5329 ,  C07F7/21 ,  C08G77/50 ,  C08L83/14 ,  G03F7/0045 ,  G03F7/0755 ,  G03F7/0757 ,  G03F7/40 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76814 ,  H01L2221/1031 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.

公开(公告)号：US08920567B2

公开(公告)日：2014-12-30

申请号：US13786970

申请日：2013-03-06

Applicant: International Business Machines Corporation

Inventor： Vamsi Devarapalli ,  Colin J. Goyette ,  Michael R. Kennett ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  James J. Steffes ,  Adam D. Ticknor ,  Wei-tsu Tseng

IPC: B08B6/00 ,  B08B7/00 ,  C25F1/00 ,  C25F3/30 ,  H01L21/02

CPC classification number: H01L21/02068 ,  H01L21/02074 ,  H01L21/76883

Abstract: A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.

Abstract translation: 提供了一种用于先进互连技术的后金属化学 - 机械平面化（CMP）清洁工艺。 遵循CMP的方法依次组合了酸性清洁剂和碱性清洁剂。 相对于全基础清洁工艺，该方法可以实现CMP缺陷的减少60％以上，例如抛光残渣，异物，浆料磨料，划痕和中空金属。 该过程还消除了在辊刷清洁模块内的辊刷清洁过程中间歇性发生的圆环缺陷。

公开(公告)号：US20140127896A1

公开(公告)日：2014-05-08

申请号：US14148183

申请日：2014-01-06

Applicant: International Business Machines Corporation

Inventor： Griselda Bonilla ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  James B. Hannon ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Satoshi Oida ,  John A. Ott ,  Dirk Pfeiffer

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/76835 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.

Abstract translation: 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。

公开(公告)号：US20130330923A1

公开(公告)日：2013-12-12

申请号：US13970124

申请日：2013-08-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qinghuang Lin ,  Ying Zhang

IPC: H01L21/283

CPC classification number: H01L21/76808 ,  H01L21/0272 ,  H01L21/0276 ,  H01L21/283 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L21/76897 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A contact structure includes a permanent antireflection coating formed on a substrate having contact pads. A patterned dielectric layer is formed on the antireflective coating. The patterned dielectric layer and the permanent antireflective coating form openings. The openings correspond with locations of the contact pads. Contact structures are formed in the openings to make electrical contact with the contacts pads such that the patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures.

公开(公告)号：US20130207278A1

公开(公告)日：2013-08-15

申请号：US13742490

申请日：2013-01-16

Applicant: International Business Machines Corporation

Inventor： Phillip J. Brock ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Jitendra S. Rathore ,  Ratnam Sooriyakumaran

IPC: H01L23/532

CPC classification number: H01L23/5329 ,  C07F7/21 ,  C08G77/50 ,  C08L83/14 ,  G03F7/0045 ,  G03F7/0755 ,  G03F7/0757 ,  G03F7/40 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76814 ,  H01L2221/1031 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.