公开(公告)号：US06989975B2

公开(公告)日：2006-01-24

申请号：US10463993

申请日：2003-06-18

申请人： Janice H. Nickel ,  Manish Sharma

发明人： Janice H. Nickel ,  Manish Sharma

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/15 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08

摘要： A magnetoresistive device includes a free ferromagnetic layer; a pinned structure; and a spacer layer between the free layer and the pinned structure. The pinned structure may include first, second and third ferromagnetic layers that are ferromagnetically coupled. The first and third layers are separated by the second layer. The second layer has a lower magnetic moment than the first and third layers. In the alternative, the pinned structure may include a single layer of Co50Fe50.

摘要翻译： 磁阻器件包括自由铁磁层; 固定结构 以及在自由层和钉扎结构之间的间隔层。 钉扎结构可以包括铁磁耦合的第一，第二和第三铁磁层。 第一和第三层由第二层隔开。 第二层具有比第一层和第三层更低的磁矩。 在替代方案中，钉扎结构可以包括单层Co 50 N 50 O 50。

公开(公告)号：US20050214953A1

公开(公告)日：2005-09-29

申请号：US10811553

申请日：2004-03-29

申请人： Heon Lee ,  Thomas Anthony ,  Manish Sharma

发明人： Heon Lee ,  Thomas Anthony ,  Manish Sharma

IPC分类号： H01L21/8246 ,  H01L27/22 ,  H01L43/12 ,  H01L21/336

CPC分类号： H01L27/222 ,  H01L43/12

摘要： A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first conductive layer and a sense layer are patterned in a first mask step. A subsequent etching step forms a bottom electrode and a sense layer that are continuous with each other in a first direction. A second conductive layer and a plurality of layers of material required to form a magnetic tunnel junction stack are patterned in a second mask step. A subsequent etching step forms a top electrode and a plurality of layers of material that are continuous with each other in a second direction, and a plurality of discrete sense layers. The discrete sense layers and the plurality of layers of material define a plurality of magnetic tunnel junction devices.

摘要翻译： 公开了制造磁随机存取存储器（MRAM）装置的方法。 该方法减少了制造MRAM设备所需的掩模步骤和处理步骤的数量。 第一导电层和感测层在第一掩模步骤中被图案化。 随后的蚀刻步骤形成在第一方向上彼此连续的底部电极和感测层。 在第二掩模步骤中图案化形成磁性隧道结叠层所需的第二导电层和多层材料。 随后的蚀刻步骤形成在第二方向上彼此连续的顶部电极和多个材料层，以及多个离散感测层。 离散感测层和多层材料限定了多个磁性隧道结装置。

公开(公告)号：US20050208769A1

公开(公告)日：2005-09-22

申请号：US10805471

申请日：2004-03-19

申请人： Manish Sharma

发明人： Manish Sharma

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/336 ,  H01L27/22 ,  H01L21/20 ,  H01L21/302

CPC分类号： H01L21/32137 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/32134

摘要： A semiconductor structure is fabricated by etching semiconductor material to form one or more recesses having side walls. The semiconductor material on the side walls is then reacted to form an oxide of the semiconductor material. This oxide may be then selectively removed from the side walls of the recess(es). This leads to a semiconductor structure having a high aspect ratio which is defined as the depth of the recess(es) divided by the width of the semiconductor material between the recess(es).

摘要翻译： 通过蚀刻半导体材料以形成具有侧壁的一个或多个凹槽来制造半导体结构。 然后使侧壁上的半导体材料反应以形成半导体材料的氧化物。 然后可以从凹部的侧壁选择性地去除该氧化物。 这导致具有高纵横比的半导体结构，其被定义为凹陷的深度除以凹部之间的半导体材料的宽度。

公开(公告)号：US20050201173A1

公开(公告)日：2005-09-15

申请号：US11089687

申请日：2005-03-24

申请人： Manish Sharma ,  Lung Tran

发明人： Manish Sharma ,  Lung Tran

IPC分类号： G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C7/00

CPC分类号： H01L27/224 ,  G11C11/00 ,  G11C11/15 ,  G11C11/16

摘要： The method for manufacturing a data storage device is disclosed. The device has a plurality of word lines, a plurality of bit lines, and a resistive crosspoint array of memory cells. Each memory cell is connected to a bit line and connected to an isolation diode that further connects to a respective word line. The isolation diode provides a unidirectional conductive path from the bit line to the word line. Each word line provides a common metal-semiconductor contact with each diode sharing the word line such that each diode has a separate metal contact located between the semiconductor portion of the common metal-semiconductor contact and its respective memory cell.

摘要翻译： 公开了一种用于制造数据存储装置的方法。 该装置具有多个字线，多个位线和存储器单元的电阻交叉点阵列。 每个存储单元连接到位线并连接到进一步连接到相应字线的隔离二极管。 隔离二极管提供从位线到字线的单向导电路径。 每个字线提供与共享字线的每个二极管共同的金属 - 半导体接触，使得每个二极管具有位于公共金属 - 半导体触点的半导体部分和其相应存储单元之间的单独的金属触点。

公开(公告)号：US20050158881A1

公开(公告)日：2005-07-21

申请号：US10758659

申请日：2004-01-15

申请人： Manish Sharma

发明人： Manish Sharma

IPC分类号： G11C11/16 ,  H01L21/00 ,  H01L21/336 ,  H01L43/12

CPC分类号： H01L43/12 ,  G11C11/16

摘要： This invention provides a method of making nano-scaled toroidal magnetic memory cells, such as may be used, for example, in magnetic random access memory (MRAM). In a particular embodiment a semiconductor wafer substrate is prepared and a conductor layer is provided upon the wafer. A hard layer is deposited upon the first conductor. From the hard layer, ion etching is employed to form an annular wall about a pillar, the wall and pillar defining an annular slot. A ferromagnetic data layer is deposited within the annular slot and a junction stack is then provided upon at least a portion of the data layer. A dielectric is applied to insulate the structure and then planarized to expose the pillar.

摘要翻译： 本发明提供了一种制造纳米级环形磁存储器单元的方法，例如可用于例如磁性随机存取存储器（MRAM）。 在特定实施例中，制备半导体晶片衬底并且在晶片上提供导体层。 硬层沉积在第一导体上。 从硬层，使用离子蚀刻来形成围绕柱的环形壁，壁和柱限定环形槽。 铁磁数据层沉积在环形槽内，然后在数据层的至少一部分上提供结堆叠。 施加电介质以使结构绝缘，然后平坦化以暴露柱。

公开(公告)号：US20050157540A1

公开(公告)日：2005-07-21

申请号：US10758658

申请日：2004-01-15

申请人： Fredrick Perner ,  Manish Sharma

发明人： Fredrick Perner ,  Manish Sharma

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： G11C11/15

摘要： This invention provides a soft-reference four conductor magnetic memory storage device. In a particular embodiment, there are a plurality of parallel electrically conductive first sense conductors and a plurality of parallel electrically conductive second sense conductors. The first and second sense conductors may provide a cross point array or a series connected array. Soft-reference magnetic memory cells are provided in electrical contact with and located and at each intersection. In addition there are a plurality of parallel electrically conductive write rows substantially proximate to and electrically isolated from the first sense conductors. A plurality of parallel electrically conductive write columns transverse to the write rows, substantially proximate to and electrically isolated from the second sense conductors, forming a write cross point array with a plurality of intersections, is also provided. Sense magnetic fields generated by at least one conductor orient the soft-reference layer but do not alter the data stored within the cell. An associated method of use is also provided.

摘要翻译： 本发明提供一种软参考四导体磁存储器存储装置。 在特定实施例中，存在多个平行导电的第一感测导体和多个平行导电的第二感测导体。 第一和第二感测导体可以提供交叉点阵列或串联连接的阵列。 软参考磁存储器单元与每个交叉点电接触并定位和设置。 此外，还存在多个平行的导电写入行，其基本上接近并与第一感测导体电隔离。 还提供了横向于写入行的多个平行的导电写入列，其基本上接近第二感测导体并与第二感测导体电隔离，形成具有多个交点的写入交叉点阵列。 由至少一个导体产生的感测磁场定向软参考层，但不改变存储在单元内的数据。 还提供了相关联的使用方法。

公开(公告)号：US06903403B2

公开(公告)日：2005-06-07

申请号：US10902925

申请日：2004-07-30

申请人： Manish Sharma ,  Lung Tran

发明人： Manish Sharma ,  Lung Tran

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L27/108 ,  H01L27/22 ,  H01L29/76 ,  H01L29/94 ,  H01L43/12

CPC分类号： H01L27/222 ,  H01L43/12

摘要： An exemplary nonvolatile memory array comprises a substrate and a plurality of memory cells formed on the substrate, each of the memory cells being addressable via at least first and second conductors during operations. An exemplary memory cell in the exemplary memory array includes a ferromagnetic annular data layer having an opening, the opening enabling the second conductor to electrically contact the first conductor, an intermediate layer on at least a portion of the annular data layer, and a soft reference layer on at least a portion of the intermediate layer.

公开(公告)号：US06894918B2

公开(公告)日：2005-05-17

申请号：US10697367

申请日：2003-10-30

申请人： Manish Sharma ,  Frederick Perner

发明人： Manish Sharma ,  Frederick Perner

IPC分类号： G06F12/16 ,  G11C11/00 ,  G11C11/15 ,  G11C11/22 ,  G11C11/404 ,  G11C11/405 ,  G11C14/00 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L43/08 ,  G11C11/25

CPC分类号： G11C14/0036 ,  G11C11/005 ,  G11C11/404 ,  G11C11/405 ,  G11C14/00

摘要： The invention includes an apparatus and a method that provides a memory back-up system. The memory back-up system includes a first memory cell, and a non-volatile memory cell that is interfaced to the first memory cell. Control circuitry allows data to be written to either the first memory cell or the non-volatile memory cell, and provides transfer of the data from either the first memory cell or the non-volatile memory cell, to the other of either the first memory cell or the non-volatile memory cell. The memory back-up system can also include a plurality of first memory cells, and a plurality of non-volatile memory cells that are interfaced to the first memory cells. Control circuitry allows data to be written to either the first memory cells or the non-volatile memory cells, and that provides transfer of the data from either the first memory cells or the non-volatile memory cells, to the other of either the first memory cells or the non-volatile memory cells.

摘要翻译： 本发明包括提供存储器备份系统的装置和方法。 存储器备份系统包括第一存储器单元和与第一存储器单元接口的非易失性存储器单元。 控制电路允许将数据写入第一存储器单元或非易失性存储单元，并且将数据从第一存储器单元或非易失性存储单元传送到第一存储单元 或非易失性存储单元。 存储器备份系统还可以包括多个第一存储器单元以及与第一存储器单元相连接的多个非易失性存储器单元。 控制电路允许将数据写入第一存储器单元或非易失性存储器单元，并且将数据从第一存储器单元或非易失性存储器单元传送到第一存储器 单元或非易失性存储单元。

公开(公告)号：US20050101035A1

公开(公告)日：2005-05-12

申请号：US10846101

申请日：2004-11-10

申请人： Janice Nickel ,  Thomas Anthony ,  Manish Sharma ,  Manoj Bhattacharyya

发明人： Janice Nickel ,  Thomas Anthony ,  Manish Sharma ,  Manoj Bhattacharyya

IPC分类号： H01L21/00 ,  H01L43/12

CPC分类号： H01L43/12

摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.

摘要翻译： 构造了一个磁阻元件。 铁磁感应层沉积在表面上。 铁磁感应层被图案化。 进行蚀刻以准备沉积介电层。 介电层沉积在感应层上。 在电介质层上沉积铁磁钉扎层。

公开(公告)号：US06891212B2

公开(公告)日：2005-05-10

申请号：US10697191

申请日：2003-10-30

申请人： Manish Sharma ,  Thomas C. Anthony ,  Lung Tran

发明人： Manish Sharma ,  Thomas C. Anthony ,  Lung Tran

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/76

CPC分类号： G11C11/16

摘要： A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.

摘要翻译： 磁存储器件包括第一和第二铁磁层。 每个铁磁层具有可以在两个方向中的任一方向上取向的磁化。 第一铁磁层具有比第二铁磁层更高的矫顽力。 磁存储器件还包括用于与第二铁磁层形成闭合磁通路径的结构。