公开(公告)号：US20110180801A1

公开(公告)日：2011-07-28

申请号：US13082104

申请日：2011-04-07

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masayuki SAKAKURA ,  Toru TAKAYAMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masayuki SAKAKURA ,  Toru TAKAYAMA

IPC分类号： H01L51/52

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/566

摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

摘要翻译： 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。

公开(公告)号：US20110176263A1

公开(公告)日：2011-07-21

申请号：US13005775

申请日：2011-01-13

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC分类号： H05K7/00

CPC分类号： G06F1/1635 ,  G06F1/1626 ,  G06F1/1637 ,  G06F1/263 ,  H01L29/786

摘要： A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

摘要翻译： 提供即使在通过电磁感应的非接触充电提供的电力低的情况下也能够操作的便携式电子设备。 便携式电子设备包括反射型液晶显示器，其包括具有氧化物半导体的晶体管，包括能够通过非接触电荷充电的可再充电电池的电源部分和包括非易失性半导体存储器件的信号处理部分。 在便携式电子装置中，存储在可再充电电池中的电力用于反射型液晶显示器和信号处理部分。

公开(公告)号：US20110169003A1

公开(公告)日：2011-07-14

申请号：US13052337

申请日：2011-03-21

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L33/08

CPC分类号： G06F3/041 ,  G02F1/13454 ,  G02F2001/13456 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion (182) of a connecting wiring (183) on an active matrix substrate is electrically connected to an FPC (191) by an anisotropic conductive film (195). The connecting wiring (183) is manufactured in the same process with a source/drain wiring of a TFT on the active matrix substrate, and is made of a lamination film of a metallic film and a transparent conductive film. In the connecting portion with the anisotropic conductive film (195), a side surface of the connecting wiring (183) is covered with a protecting film (173) made of an insulating material. Accordingly, the portion in which the metallic film is surrounded by the transparent conductive film, the insulating base film, and the protecting film (173) to which it is in contact with, can be avoided from exposure to air because the side surface of the metallic film of the connecting wiring is covered with the protecting film (173).

摘要翻译： 为了提高与诸如液晶显示面板的半导体装置中的各向异性导电膜的接触的可靠性，有源矩阵基板上的连接布线（183）的端子部分（182）电连接到FPC（191） 通过各向异性导电膜（195）。 连接配线（183）以与有源矩阵基板上的TFT的源极/漏极配线相同的工艺制造，并且由金属膜和透明导电膜的层叠膜制成。 在与各向异性导电膜（195）的连接部分中，连接布线（183）的侧表面被由绝缘材料制成的保护膜（173）覆盖。 因此，可以避免金属膜被透明导电膜，绝缘基膜和与其接触的保护膜（173）包围的部分暴露于空气中，因为这样 连接布线的金属膜被保护膜（173）覆盖。

公开(公告)号：US20110140108A1

公开(公告)日：2011-06-16

申请号：US12960659

申请日：2010-12-06

申请人： Hajime KIMURA ,  Atsushi UMEZAKI ,  Shunpei YAMAZAKI

发明人： Hajime KIMURA ,  Atsushi UMEZAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L27/088

CPC分类号： H01L27/124 ,  G02F1/133345 ,  G02F1/1334 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/13345 ,  G09G3/2007 ,  G09G3/36 ,  G09G2300/0426 ,  G09G2310/0289 ,  G09G2310/08 ,  G09G2320/0252 ,  G09G2320/0257 ,  G09G2330/021 ,  H01L21/823412 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/247 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to improve the drive capability of a semiconductor device. The semiconductor device includes a first transistor and a second transistor. A first terminal of the first transistor is electrically connected to a first wiring. A second terminal of the first transistor is electrically connected to a second wiring. A gate of the second transistor is electrically connected to a third wiring. A first terminal of the second transistor is electrically connected to the third wiring. A second terminal of the second transistor is electrically connected to a gate of the first transistor. A channel region is formed using an oxide semiconductor layer in each of the first transistor and the second transistor. The off-state current of each of the first transistor and the second transistor per channel width of 1 μm is 1 aA or less.

摘要翻译： 目的在于提高半导体器件的驱动能力。 半导体器件包括第一晶体管和第二晶体管。 第一晶体管的第一端子电连接到第一布线。 第一晶体管的第二端子电连接到第二布线。 第二晶体管的栅极电连接到第三布线。 第二晶体管的第一端子电连接到第三布线。 第二晶体管的第二端子电连接到第一晶体管的栅极。 在第一晶体管和第二晶体管的每一个中使用氧化物半导体层形成沟道区。 每个通道宽度为1μm的第一晶体管和第二晶体管的截止电流为1AA以下。

公开(公告)号：US20110134647A1

公开(公告)日：2011-06-09

申请号：US12944195

申请日：2010-11-11

申请人： Jiro NISHIDA ,  Yuji EGI ,  Takeshi NISHI ,  Shunpei YAMAZAKI

发明人： Jiro NISHIDA ,  Yuji EGI ,  Takeshi NISHI ,  Shunpei YAMAZAKI

IPC分类号： F21V5/04

CPC分类号： G02B1/118 ,  G02F1/133504 ,  G02F2201/38 ,  H01L51/5268 ,  H01L51/5281 ,  H05B33/22

摘要： An object of the present invention is to provide an antireflective film having an anti-reflection function with which reflection of external light which is incident on the antireflective film can be further reduced and a high-visibility display device having such an antireflective film. The tops of the plurality of pyramidal projections are evenly spaced and each side of the base of a pyramidal projection is in contact with one side of the base of an adjacent pyramidal projection. That is, one pyramidal projection is surrounded by other pyramidal projections, and the base of the pyramidal projection and the base of the adjacent pyramidal projection have a side in common.

摘要翻译： 本发明的目的是提供一种具有抗反射功能的防反射膜，能够进一步降低入射到防反射膜上的外部光的反射，并且具有这种抗反射膜的高可视度显示装置。 多个金字塔形突起的顶部是均匀间隔的，金字塔形突起的基部的每一侧与相邻金字塔形突起的基部的一侧接触。 也就是说，一个金字塔形突起被其他金字塔形突起包围，金字塔形突起的基部和相邻金字塔形突起的基部具有共同的一面。

公开(公告)号：US20110127579A1

公开(公告)日：2011-06-02

申请号：US12951225

申请日：2010-11-22

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  B05D3/00 ,  B32B37/02 ,  C23C14/34 ,  B32B9/00 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/16 ,  H01L27/1225 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78609 ,  Y10T156/10 ,  Y10T428/265 ,  Y10T428/31678

摘要： One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming a first oxide component over a base component, causing crystal growth which proceeds from a surface toward an inside of the first oxide component by first heat treatment to form a first oxide crystal component at least partly in contact with the base component, forming a second oxide component over the first oxide crystal component; and causing crystal growth by second heat treatment using the first oxide crystal component as a seed to form a second oxide crystal component.

摘要翻译： 一个实施方案是一种叠层氧化物材料的制造方法，包括以下步骤：在基底成分上形成第一氧化物组分，通过第一热处理从第一氧化物组分的表面向内部进行晶体生长，形成第一氧化物组分 氧化物晶体成分至少部分地与所述基底成分接触，在所述第一氧化物晶体成分上形成第二氧化物成分; 并且通过使用第一氧化物晶体组分作为种子进行第二次热处理以形成第二氧化物晶体组分的晶体生长。

公开(公告)号：US20110111558A1

公开(公告)日：2011-05-12

申请号：US12938538

申请日：2010-11-03

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Toru TAKAYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Toru TAKAYAMA

IPC分类号： H01L21/336 ,  C23C14/34 ,  C23C14/08

CPC分类号： H01L21/6719 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/67207 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H2O, a compound containing a carbon atom, a hydrogen atom, or a carbon atom can be provided. Further, a method for forming a thin film containing few impurities can be provided. Furthermore, a method for forming a highly reliable semiconductor element including an oxide semiconductor film containing few impurities can be provided.

摘要翻译： 本发明的目的是提供一种用于形成含有少量诸如氢原子或碳原子的杂质的薄膜的沉积装置。 此外，目的在于提供一种形成含有少量杂质的薄膜的方法。 此外，目的在于提供一种制造高可靠性的半导体元件的方法，所述半导体元件包括少量杂质的氧化物半导体膜。 可以提供沉积装置，用于形成含有少量杂质的薄膜，例如含有氢原子的化合物如H 2 O，含有碳原子的化合物，氢原子或碳原子。 此外，可以提供形成含有少量杂质的薄膜的方法。 此外，可以提供形成包含少量杂质的氧化物半导体膜的高可靠性半导体元件的方法。

公开(公告)号：US20110095292A1

公开(公告)日：2011-04-28

申请号：US12983538

申请日：2011-01-03

申请人： Toru TAKAYAMA ,  Shunpei YAMAZAKI ,  Kengo AKIMOTO

发明人： Toru TAKAYAMA ,  Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC分类号： H01L29/12

CPC分类号： H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

摘要： An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

摘要翻译： 本发明的目的是将适合作为栅极绝缘膜和保护膜的固化和高质量的绝缘膜应用于在应变点或更低的温度下在玻璃基板上形成绝缘膜的技术， 以及通过使用它实现高效率和高可靠性的半导体器件。 在本发明的半导体器件中，通过氧化硅膜在晶体半导体膜上形成沟道长度为0.35〜2.5μm的场效应晶体管的栅极绝缘膜，其中，硅 氮化物膜含有浓度为1×1021 / cm3以下的氢，相对于含有7.13％的氟化氢铵（NH4HF2）和氟化铵（NH4HF2）的混合溶液，蚀刻速率为10nm /分钟以下的特性 NH4F）为15.4％。

公开(公告)号：US20110090207A1

公开(公告)日：2011-04-21

申请号：US12906538

申请日：2010-10-18

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC分类号： G06F3/038

CPC分类号： G09G3/3208 ,  G09G3/2003 ,  G09G3/3233 ,  G09G2330/021 ,  H01L27/1225 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

摘要翻译： 目的是提供一种降低功耗的显示装置，以提供其功耗降低并且能够在黑暗处长期使用的自发光显示装置。 使用其中使用高度纯化的氧化物半导体并且像素可以保持一定状态（已经写入视频信号的状态）的薄膜晶体管形成电路。 结果，即使在显示静止图像的情况下，也能够容易地进行稳定的动作。 此外，可以延长驱动电路的操作间隔，这导致显示装置的功耗的降低。 此外，在自发光显示装置的像素部分中使用光存储材料来存储光，由此显示装置可以在黑暗的地方长时间使用。

公开(公告)号：US20110090184A1

公开(公告)日：2011-04-21

申请号：US12902670

申请日：2010-10-12

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC分类号： G06F3/038 ,  H03K19/0175

CPC分类号： H01L27/1255 ,  G09G3/20 ,  G09G3/2092 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G09G3/3648 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2310/08 ,  G11C19/184 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/161 ,  H03K19/00315 ,  H03K19/096

摘要： To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

摘要翻译： 为了减小晶体管的漏电流，可以抑制逻辑电路的故障。 逻辑电路包括晶体管，其包括具有沟道形成层的功能的氧化物半导体层，并且其中截止电流在沟道宽度中为每微米1×10-13A或更小。 作为时钟信号的第一信号，第二信号和第三信号被输入作为输入信号。 作为输出信号输出第四信号和第五信号，其电压状态根据输入的第一至第三信号而被设定。