公开(公告)号：US20060079005A1

公开(公告)日：2006-04-13

申请号：US10964464

申请日：2004-10-12

申请人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Robert Chau

发明人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Robert Chau

IPC分类号： H01L21/00 ,  H01L21/8238

CPC分类号： H01L21/823462

摘要： A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer on the hydrophilic surface.

摘要翻译： 描述制造半导体器件的方法。 该方法包括将基底的疏水表面转化为亲水表面，并在亲水表面上形成高k栅介质层。

公开(公告)号：US20060046399A1

公开(公告)日：2006-03-02

申请号：US10925566

申请日：2004-08-25

申请人： Nick Lindert ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Justin Brask ,  Robert Chau ,  Mark Bohr ,  Anand Murthy

发明人： Nick Lindert ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Justin Brask ,  Robert Chau ,  Mark Bohr ,  Anand Murthy

IPC分类号： H01L21/336

CPC分类号： H01L29/7833 ,  H01L29/1054 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656

摘要： A gate structure may be utilized as a mask to form source and drain regions. Then the gate structure may be removed to form a gap and spacers may be formed in the gap to define a trench. In the process of forming a trench into the substrate, a portion of the source drain region is removed. Then the substrate is filled back up with an epitaxial material and a new gate structure is formed thereover. As a result, more abrupt source drain junctions may be achieved.

摘要翻译： 栅极结构可以用作掩模以形成源区和漏区。 然后可以去除栅极结构以形成间隙，并且可以在间隙中形成间隔物以限定沟槽。 在将沟槽形成衬底的过程中，去除源极漏极区的一部分。 然后用外延材料填充衬底，并在其上形成新的栅极结构。 结果，可以实现更突然的源极漏极结。

公开(公告)号：US06998686B2

公开(公告)日：2006-02-14

申请号：US10230944

申请日：2002-08-28

申请人： Robert Chau ,  Mark Doczy ,  Brian Doyle ,  Jack Kavalieros

发明人： Robert Chau ,  Mark Doczy ,  Brian Doyle ,  Jack Kavalieros

IPC分类号： H01L29/78

CPC分类号： H01L29/665 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/6659 ,  H01L29/7833

摘要： Described is a CMOS transistor structure with a multi-layered gate electrode structure and a method of fabrication. The gate electrode structure has a three-layered metallic gate electrode and a polysilicon layer. The first metallic layer acts as a barrier to prevent the second metallic layer from reacting with an underlying dielectric. The second metallic layer acts to set the work function of the gate electrode structure. The third metallic layer acts as a barrier to prevent the second metallic layer from reacting with the polysilicon layer.The method of fabricating the gate electrode structure includes forming the three metallic layers thick enough that each layer provides the barrier and work-function setting functions mentioned above, but also thin enough that a subsequent wet-etch can be performed without excessive undercutting of the metallic layers. During implant and anneal processes, the polysilicon layer acts as a protective mask over the metallic layers to protect an underlying silicon substrate from interacting with dopants used during the implant process.

摘要翻译： 描述了具有多层栅电极结构的CMOS晶体管结构和制造方法。 栅电极结构具有三层金属栅电极和多晶硅层。 第一金属层用作阻挡层以防止第二金属层与下面的电介质反应。 第二金属层用于设定栅电极结构的功函数。 第三金属层用作阻挡第二金属层与多晶硅层反应的屏障。

公开(公告)号：US20060017098A1

公开(公告)日：2006-01-26

申请号：US10896124

申请日：2004-07-20

申请人： Mark Doczy ,  Jack Kavalieros ,  Matthew Metz ,  Justin Brask ,  Suman Datta ,  Robert Chau

发明人： Mark Doczy ,  Jack Kavalieros ,  Matthew Metz ,  Justin Brask ,  Suman Datta ,  Robert Chau

IPC分类号： H01L29/76

CPC分类号： H01L21/28194 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

摘要： A semiconductor device is described that comprises a gate dielectric and a metal gate electrode that comprises an aluminide.

公开(公告)号：US20060000489A1

公开(公告)日：2006-01-05

申请号：US11217008

申请日：2005-08-30

申请人： Michael Chan ,  Robert Bristol ,  Mark Doczy

发明人： Michael Chan ,  Robert Bristol ,  Mark Doczy

IPC分类号： B08B6/00

CPC分类号： G21K1/06 ,  B08B7/0057 ,  G03F7/70925 ,  Y10S134/902

摘要： A method for cleaning optics in a chamber. The method can include introducing a first etchant into a chamber that encloses an optical component and a source of electromagnetic radiation that is suitable for lithography, ionizing the first etchant, and removing debris from a surface of the optical component.

摘要翻译： 一种清洁室内光学元件的方法。 该方法可以包括将第一蚀刻剂引入到包围光学部件的室中，以及适于光刻的电磁辐射源，电离第一蚀刻剂，以及从光学部件的表面去除碎屑。

公开(公告)号：US20050285213A1

公开(公告)日：2005-12-29

申请号：US10877836

申请日：2004-06-24

申请人： Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Justin Brask ,  Robert Chau

发明人： Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Justin Brask ,  Robert Chau

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L21/28247 ,  H01L21/26586 ,  H01L21/28238 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31155 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/495 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553

摘要： In a metal gate replacement process, a cup-shaped gate metal oxide dielectric may have a vertical portion that may be exposed to a silicon ion implantation. As a result of the implantation, the dielectric constant of a vertical portion may be reduced, reducing fringe capacitance.

摘要翻译： 在金属栅极更换工艺中，杯状栅极金属氧化物电介质可以具有可暴露于硅离子注入的垂直部分。 作为注入的结果，可以减小垂直部分的介电常数，减少边缘电容。

公开(公告)号：US06968850B2

公开(公告)日：2005-11-29

申请号：US10197628

申请日：2002-07-15

申请人： Michael Chan ,  Robert Bristol ,  Mark Doczy

发明人： Michael Chan ,  Robert Bristol ,  Mark Doczy

IPC分类号： B08B7/00 ,  G03F7/20

CPC分类号： G21K1/06 ,  B08B7/0057 ,  G03F7/70925 ,  Y10S134/902

摘要： A method and system for cleaning collector optics in a light source chamber. In producing, for example, extreme ultraviolet light for lithography, debris such as tungsten can accumulate on optical components near a light source in the light source chamber.An etchant, such as a fluorine-containing gas, can be introduced into the light source chamber. The etchant is ionized via electrodes to generate free fluorine. The electrodes can be, for example, existing light source chamber components including the optical components. The fluorine can then react with the debris, forming gaseous compounds, which are pumped out of the light source chamber.

摘要翻译： 一种用于清洁光源室中的收集器光学元件的方法和系统。 例如，在制造用于光刻的极紫外光时，诸如钨的碎屑可以积聚在光源室中的光源附近的光学部件上。 诸如含氟气体的蚀刻剂可以被引入到光源室中。 蚀刻剂通过电极离子化以产生游离氟。 电极可以是例如包括光学部件的现有光源室部件。 然后，氟可以与碎屑反应，形成气体化合物，其被泵送出光源室。

公开(公告)号：US20050250258A1

公开(公告)日：2005-11-10

申请号：US10839077

申请日：2004-05-04

申请人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

发明人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

IPC分类号： H01L21/8238 ,  H01L21/335

CPC分类号： H01L21/823842

摘要： A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and forming a masking layer on a first part of the high-k gate dielectric layer. After forming a first metal layer on the masking layer and on an exposed second part of the high-k gate dielectric layer, the masking layer is removed. A second metal layer is then formed on the first metal layer and on the first part of the high-k gate dielectric layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成高k栅极电介质层，并在高k栅极电介质层的第一部分上形成掩模层。 在掩模层和高k栅极电介质层的暴露的第二部分上形成第一金属层之后，去除掩模层。 然后在第一金属层和高k栅极电介质层的第一部分上形成第二金属层。

公开(公告)号：US20050156171A1

公开(公告)日：2005-07-21

申请号：US11023881

申请日：2004-12-27

申请人： Justin Brask ,  Brian Doyle ,  Mark Doczy ,  Robert Chau

发明人： Justin Brask ,  Brian Doyle ,  Mark Doczy ,  Robert Chau

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L29/49 ,  H01L29/786 ,  H01L29/94

CPC分类号： H01L29/785 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/845 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/4908 ,  H01L29/66545 ,  H01L29/66795

摘要： A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are uniformed in the semiconductor body on opposite sides of the gate electrode.

公开(公告)号：US20050032318A1

公开(公告)日：2005-02-10

申请号：US10943661

申请日：2004-09-16

申请人： Robert Chau ,  Reza Arghavani ,  Mark Doczy

发明人： Robert Chau ,  Reza Arghavani ,  Mark Doczy

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L21/336

CPC分类号： H01L21/28185 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/28194 ,  H01L21/28238 ,  H01L21/3105 ,  H01L29/517 ,  Y10S438/906 ,  Y10S438/974

摘要： A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will be compatible with a gate electrode to be formed on the dielectric layer, and then a gate electrode is formed on the dielectric layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成具有大于二氧化硅介电常数的介电常数的电介质层。 电介质层被修改为与在电介质层上形成的栅电极相容，然后在电介质层上形成栅电极。