公开(公告)号：US06809017B2

公开(公告)日：2004-10-26

申请号：US10452088

申请日：2003-05-30

申请人： Reza Arghavani ,  Robert Chau ,  Mark Doczy ,  Brian Roberds

发明人： Reza Arghavani ,  Robert Chau ,  Mark Doczy ,  Brian Roberds

IPC分类号： H01L213205

CPC分类号： H01L21/28176 ,  H01L21/28035 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31683 ,  H01L29/4925 ,  H01L29/517

摘要： Method of fabricating a semiconductor device. The semiconductor device comprises a substrate, a high-k gate dielectric layer formed on the substrate, and a hydrogen-free gate electrode deposited on the high-k gate dielectric layer wherein the hydrogen-free gate electrode is conductive. The method comprises depositing the high-k gate dielectric layer on the substrate, sputtering the gate electrode on the gate dielectric layer and treating the gate electrode such that the gate electrode is conductive.

摘要翻译： 制造半导体器件的方法 半导体器件包括衬底，形成在衬底上的高k栅介质层和沉积在高k栅介质层上的无氢栅电极，其中无氢栅电极是导电的。 该方法包括在衬底上沉积高k栅极电介质层，在栅极电介质层上溅射栅电极并处理栅电极使得栅电极是导电的。

公开(公告)号：US07166505B2

公开(公告)日：2007-01-23

申请号：US10943661

申请日：2004-09-16

申请人： Robert Chau ,  Reza Arghavani ,  Mark Doczy

发明人： Robert Chau ,  Reza Arghavani ,  Mark Doczy

IPC分类号： H01L21/8242 ,  H01L21/8232 ,  H01L21/335

CPC分类号： H01L21/28185 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/28194 ,  H01L21/28238 ,  H01L21/3105 ,  H01L29/517 ,  Y10S438/906 ,  Y10S438/974

摘要： A method for making a semiconductor device is described. That method includes forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will be compatible with a gate electrode to be formed on the dielectric layer, and then a gate electrode is formed on the dielectric layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在基板上形成具有大于二氧化硅介电常数的介电常数的电介质层。 电介质层被修改为与在电介质层上形成的栅电极相容，然后在电介质层上形成栅电极。

公开(公告)号：US06617209B1

公开(公告)日：2003-09-09

申请号：US10082530

申请日：2002-02-22

申请人： Robert Chau ,  Reza Arghavani ,  Mark Doczy

发明人： Robert Chau ,  Reza Arghavani ,  Mark Doczy

IPC分类号： H01L218242

CPC分类号： H01L21/28185 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/28194 ,  H01L21/28238 ,  H01L21/3105 ,  H01L29/517 ,  Y10S438/906 ,  Y10S438/974

摘要： A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will be compatible with a gate electrode to be formed on the dielectric layer, and then a gate electrode is formed on the dielectric layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成具有大于二氧化硅介电常数的介电常数的电介质层。 电介质层被修改为与在电介质层上形成的栅电极相容，然后在电介质层上形成栅电极。

公开(公告)号：US20050032318A1

公开(公告)日：2005-02-10

申请号：US10943661

申请日：2004-09-16

申请人： Robert Chau ,  Reza Arghavani ,  Mark Doczy

发明人： Robert Chau ,  Reza Arghavani ,  Mark Doczy

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L21/336

CPC分类号： H01L21/28185 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/28194 ,  H01L21/28238 ,  H01L21/3105 ,  H01L29/517 ,  Y10S438/906 ,  Y10S438/974

摘要： A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will be compatible with a gate electrode to be formed on the dielectric layer, and then a gate electrode is formed on the dielectric layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成具有大于二氧化硅介电常数的介电常数的电介质层。 电介质层被修改为与在电介质层上形成的栅电极相容，然后在电介质层上形成栅电极。

公开(公告)号：US06620713B2

公开(公告)日：2003-09-16

申请号：US10038410

申请日：2002-01-02

申请人： Reza Arghavani ,  Robert Chau ,  Mark Doczy ,  Brian Roberds

发明人： Reza Arghavani ,  Robert Chau ,  Mark Doczy ,  Brian Roberds

IPC分类号： H01L213205

CPC分类号： H01L21/28176 ,  H01L21/28035 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31683 ,  H01L29/4925 ,  H01L29/517

摘要： Method of fabricating a semiconductor device. The semiconductor device comprises a substrate, a high-k gate dielectric layer formed on the substrate, and a hydrogen-free gate electrode deposited on the high-k gate dielectric layer wherein the hydrogen-free gate electrode is conductive. The method comprises depositing the high-k gate dielectric layer on the substrate, sputtering the gate electrode on the gate dielectric layer and treating the gate electrode such that the gate electrode is conductive.

摘要翻译： 制造半导体器件的方法 半导体器件包括衬底，形成在衬底上的高k栅介质层和沉积在高k栅介质层上的无氢栅电极，其中无氢栅电极是导电的。 该方法包括在衬底上沉积高k栅极电介质层，在栅极电介质层上溅射栅电极并处理栅电极使得栅电极是导电的。

公开(公告)号：US08173495B2

公开(公告)日：2012-05-08

申请号：US12911649

申请日：2010-10-25

申请人： Been-Yih Jin ,  Reza Arghavani ,  Robert Chau

发明人： Been-Yih Jin ,  Reza Arghavani ,  Robert Chau

IPC分类号： H01L21/00

CPC分类号： H01L21/02488 ,  H01L21/02532 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/76256

摘要： A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on a semiconductor substrate, and a lattice-matched semiconductor layer is formed on the insulator layer to form a relatively thin, relatively uniform semiconductor on insulator apparatus. In embodiments of the method and apparatus, energy band characteristics may be used to facilitate the extraction of the well-region minority carriers.

摘要翻译： 一种用于制造具有改善的载流子迁移率的相对薄的相对均匀的半导体层的方法和装置。 在一个实施例中，在半导体衬底上形成晶格匹配的绝缘体层，并且在绝缘体层上形成晶格匹配的半导体层，以形成相对薄的相对均匀的半导体绝缘体设备。 在该方法和装置的实施例中，可以使用能带特征来促进提取良好区域的少数载流子。

公开(公告)号：US07875932B2

公开(公告)日：2011-01-25

申请号：US12581794

申请日：2009-10-19

申请人： Been-Yih Jin ,  Reza Arghavani ,  Robert Chau

发明人： Been-Yih Jin ,  Reza Arghavani ,  Robert Chau

IPC分类号： H01L27/01

CPC分类号： H01L21/02488 ,  H01L21/02532 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/76256

摘要： A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on a semiconductor substrate, and a lattice-matched semiconductor layer is formed on the insulator layer to form a relatively thin, relatively uniform semiconductor on insulator apparatus. In embodiments of the method and apparatus, energy band characteristics may be used to facilitate the extraction of the well-region minority carriers.

摘要翻译： 一种用于制造具有改善的载流子迁移率的相对薄的相对均匀的半导体层的方法和装置。 在一个实施例中，在半导体衬底上形成晶格匹配的绝缘体层，并且在绝缘体层上形成晶格匹配的半导体层，以形成相对薄的相对均匀的半导体绝缘体设备。 在该方法和装置的实施例中，可以使用能带特征来促进提取良好区域的少数载流子。

公开(公告)号：US20110039377A1

公开(公告)日：2011-02-17

申请号：US12911649

申请日：2010-10-25

申请人： Been-Yih Jin ,  Reza Arghavani ,  Robert Chau

发明人： Been-Yih Jin ,  Reza Arghavani ,  Robert Chau

IPC分类号： H01L21/84

CPC分类号： H01L21/02488 ,  H01L21/02532 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/76256

摘要： A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on a semiconductor substrate, and a lattice-matched semiconductor layer is formed on the insulator layer to form a relatively thin, relatively uniform semiconductor on insulator apparatus. In embodiments of the method and apparatus, energy band characteristics may be used to facilitate the extraction of the well-region minority carriers.

摘要翻译： 一种用于制造具有改善的载流子迁移率的相对薄的相对均匀的半导体层的方法和装置。 在一个实施例中，在半导体衬底上形成晶格匹配的绝缘体层，并且在绝缘体层上形成晶格匹配的半导体层，以形成相对薄的相对均匀的半导体绝缘体设备。 在该方法和装置的实施例中，可以使用能带特征来促进提取良好区域的少数载流子。

公开(公告)号：US07671414B2

公开(公告)日：2010-03-02

申请号：US12195323

申请日：2008-08-20

申请人： Been-Yih Jin ,  Reza Arghavani ,  Robert Chau

发明人： Been-Yih Jin ,  Reza Arghavani ,  Robert Chau

IPC分类号： H01L23/62

CPC分类号： H01L21/02488 ,  H01L21/02532 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/76256

摘要： A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on a semiconductor substrate, and a lattice-matched semiconductor layer is formed on the insulator layer to form a relatively thin, relatively uniform semiconductor on insulator apparatus. In embodiments of the method and apparatus, energy band characteristics may be used to facilitate the extraction of the well-region minority carriers.

摘要翻译： 一种用于制造具有改善的载流子迁移率的相对薄的相对均匀的半导体层的方法和装置。 在一个实施例中，在半导体衬底上形成晶格匹配的绝缘体层，并且在绝缘体层上形成晶格匹配的半导体层，以形成相对薄的相对均匀的半导体绝缘体设备。 在该方法和装置的实施例中，可以使用能带特征来促进提取良好区域的少数载流子。

公开(公告)号：US06610615B1

公开(公告)日：2003-08-26

申请号：US09714001

申请日：2000-11-15

申请人： Robert McFadden ,  Jack Kavalieros ,  Reza Arghavani ,  Doug Barlage ,  Robert Chau

发明人： Robert McFadden ,  Jack Kavalieros ,  Reza Arghavani ,  Doug Barlage ,  Robert Chau

IPC分类号： H01L2131

CPC分类号： H01L21/28202 ,  H01L21/3144 ,  H01L29/518

摘要： A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes nitridizing a thin silicon oxide film in a low power, direct plasma formed from nitrogen. A gas having a lower ionization energy than nitrogen, such as for example, helium, may be used in combination with nitrogen to produce a lower power plasma resulting in a steeper concentration curve for nitrogen in the silicon oxide film.