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    Process and apparatus for manufacturing semiconductor device
    85.
    发明授权
    Process and apparatus for manufacturing semiconductor device 有权
    用于制造半导体器件的工艺和设备

    公开(公告)号：US06667806B2

    公开(公告)日：2003-12-23

    申请号：US09796613

    申请日：2001-03-02

    申请人： Yasuhiro Yoshitake ,  Takeshi Kato ,  Toshihiko Nakata

    发明人： Yasuhiro Yoshitake ,  Takeshi Kato ,  Toshihiko Nakata

    IPC分类号： G01B1100

    CPC分类号： G03F7/70633 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： As the size of the semiconductor devices decreases, the relative positional difference between a circuit at an exposure area and an alignment mark due to the aberrations and distortions of lenses and the reticle writing error can not be neglected. Images of circuit patterns having a very small size which are laminated are detected using lights having two different wavelengths. Alignment error is calculated from the relationship between the phase difference of images and the alignment error at each wavelength. The alignment error which affects the yield can be detected by directly measuring the alignment error of the circuit in the exposure area including the influence of the aberrations and distortions of lenses and the reticle writing error. Proper correction and improvement of the exposure apparatus can be achieved at early phase prior to electrical test.

    摘要翻译： 随着半导体器件的尺寸减小，曝光区域之间的电路与由于透镜的像差和失真以及掩模版写入误差引起的对准标记之间的相对位置差不能忽略。 使用具有两个不同波长的光来检测层叠有非常小尺寸的电路图案的图像。 对准误差根据图像的相位差和每个波长的对准误差之间的关系计算。 可以通过直接测量曝光区域中的电路的对准误差来检测影响产量的对准误差，包括透镜的像差和失真的影响以及掩模版写入误差。 曝光装置的正确校正和改进可以在电气测试之前的早期阶段实现。

    Exposure method
    86.
    发明授权
    Exposure method 失效
    曝光方法

    公开(公告)号：US06653032B2

    公开(公告)日：2003-11-25

    申请号：US10026991

    申请日：2001-12-18

    申请人： Toshiharu Miwa ,  Yasuhiro Yoshitake ,  Tetsuya Yamazaki

    发明人： Toshiharu Miwa ,  Yasuhiro Yoshitake ,  Tetsuya Yamazaki

    IPC分类号： G03F900

    CPC分类号： G03F7/705 ,  G03F7/70525 ,  G03F7/70558 ,  G03F7/706 ,  G03F7/70641

    摘要： In lithographic (exposure) processing for semiconductor device fabrication, the task of extracting exposure parameters is performed by calculating exposure energy and focus offset using a test wafer for each exposure device, because fluctuations due to differences between exposure devices are large. For the fabrication of semiconductor devices in multiple-product small-lot production, the number of times the task of extracting exposure parameters has to be performed increases, so that the operation ratio of the exposure devices decreases, and the TAT of the semiconductor device fabrication increases. Moreover, as the miniaturization of semiconductor devices advances, differences between the exposure devices cause defects due to the exposure processing, and the yield of the semiconductor device fabrication decreases. In an improved method of exposure processing for semiconductor devices, the exposure energy and focus offset according to the illumination parameters for an exposure device and optical projection system, using information regarding the projection lens aberrations of a plurality of exposure devices, the photoresist parameters, and the circuit pattern information, as determined beforehand, are calculated using an optical development simulator, and the exposure processing is carried out using an exposure device, selected from a plurality of exposure devices, in which the process window is within a certain tolerance value.

    摘要翻译： 在用于半导体器件制造的光刻（曝光）处理中，由于曝光装置之间的差异引起的波动，所以通过使用每个曝光装置的测试晶片计算曝光能量和聚焦偏移来执行提取曝光参数的任务。 对于多产品小批量生产中的半导体器件的制造，必须执行提取曝光参数的任务的次数增加，使得曝光装置的操作比降低，并且半导体器件制造的TAT 增加 此外，随着半导体器件的小型化的发展，曝光装置之间的差异导致由于曝光处理而引起的缺陷，并且半导体器件制造的成品率降低。 在半导体器件的曝光处理的改进方法中，使用关于多个曝光装置的投影透镜像差的信息，光致抗蚀剂参数以及与多个曝光装置的投影透镜像差有关的信息，根据曝光装置和光学投影系统的照明参数的曝光能量和聚焦偏移 使用光学显影模拟器计算预先确定的电路图案信息，并且使用从多个曝光装置中选择的曝光装置进行曝光处理，其中处理窗口在某一公差值内。

    Refractive/diffractive optical system for broad-band through-the-lens imaging of alignment marks on substrates in stepper machines
    88.
    发明授权
    Refractive/diffractive optical system for broad-band through-the-lens imaging of alignment marks on substrates in stepper machines 失效
    折射/衍射光学系统，用于在步进机器中的基板上的对准标记的宽带透镜成像

    公开(公告)号：US5371570A

    公开(公告)日：1994-12-06

    申请号：US157

    申请日：1993-01-04

    申请人： G. Michael Morris ,  Yasuhiro Yoshitake

    发明人： G. Michael Morris ,  Yasuhiro Yoshitake

    IPC分类号： G02B27/00 ,  G03F9/00 ,  G03B27/42

    CPC分类号： G03F9/70 ,  G02B27/0043 ,  G02B27/4211 ,  G02B27/4222

    摘要： A chromatic aberration-corrected optical system for broad-band through-the-lens (TTL) imaging and position detection of alignment marks deposed on a substrate located at the exposure plane of an exposure apparatus, for example, a stepper machine, uses a first projection lens capable of focusing a first broad-band alignment illumination and a second exposure illumination onto the substrate. A second achromat lens and a third refractive/diffractive hybrid lens are configured and designed to provide, in conjunction with the first projection lens, longitudinal and lateral chromatic aberration correction over a wavelength range from about 550-650 nm of the broad-band alignment illumination.

    摘要翻译： 用于宽带透镜（TTL）成像的色差校正光学系统和位于曝光装置例如步进机的曝光平面上的基板上的对准标记的位置检测使用第一 投影透镜，其能够将第一宽带对准照明和第二曝光照明聚焦到基板上。 第二消色差透镜和第三折射/衍射混合透镜被配置和设计成与第一投影透镜一起提供在宽带对准照明的约550-650nm的波长范围上的纵向和横向色像差校正 。

    Illumination apparatus for exposure
    90.
    发明授权
    Illumination apparatus for exposure 失效
    曝光照明装置

    公开(公告)号：US4819033A

    公开(公告)日：1989-04-04

    申请号：US113514

    申请日：1987-10-28

    申请人： Yasuhiro Yoshitake ,  Yoshitada Oshida ,  Masataka Shiba ,  Naoto Nakashima

    发明人： Yasuhiro Yoshitake ,  Yoshitada Oshida ,  Masataka Shiba ,  Naoto Nakashima

    IPC分类号： H01L21/30 ,  G03F7/20 ,  H01L21/027 ,  H01S3/101 ,  H01S3/106 ,  G03B27/42 ,  G03B27/72

    CPC分类号： G03F7/70558 ,  G03F7/2006 ,  G03F7/70041 ,  G03F7/70058

    摘要： An illumination apparatus is disclosed which is suitable for use in a projection/exposure system for projecting an image of a circuit pattern of a reticle on a semiconductor wafer through a projection lens. The illumination apparatus includes an excimer laser for emitting a pulsed laser beam, an optical system for illuminating the reticle with a plurality of laser pulses emitted from the excimer laser so that laser pulses having passed through the reticle impinge on the semiconductor wafer in different directions through the projection lens, and a light intensity control device for controlling the light intensity of each of the laser pulses so that the laser pulses equally contribute to the reaction of a light sensitive material which is provided on the semiconductor wafer, with light.

    摘要翻译： 公开了一种适用于投影/曝光系统的照明装置，用于通过投影透镜在半导体晶片上投射标线片的电路图案的图像。 照明装置包括用于发射脉冲激光束的准分子激光器，用于从准分子激光器发射的多个激光脉冲照射标线片的光学系统，使得已经穿过掩模版的激光脉冲以不同方向穿过半导体晶片 投影透镜和用于控制每个激光脉冲的光强度的光强度控制装置，使得激光脉冲同样有助于设置在半导体晶片上的光敏材料与光的反应。