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276 条记录 (耗时 0.031 秒)

    Phase change memory device
    81.
    发明申请
    Phase change memory device 有权
    相变存储器件

    公开(公告)号：US20060197115A1

    公开(公告)日：2006-09-07

    申请号：US10551702

    申请日：2003-04-03

    申请人： Haruki Toda

    发明人： Haruki Toda

    IPC分类号： H01L29/768

    CPC分类号： G11C13/0004 ,  G11C5/02 ,  G11C7/18 ,  G11C13/0007 ,  G11C2211/4013 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233

    摘要： A phase change memory device has a semiconductor substrate; a plurality of cell arrays stacked above the semiconductor substrate, each cell array having memory cells arranged in a matrix manner for storing resistance values as data that are determined by phase change of the memory cells, bit lines each commonly connecting one ends of plural memory cells arranged along a first direction of the matrix and word lines each commonly connecting the other ends of plural memory cells arranged along a second direction of the matrix; a read/write circuit formed on the semiconductor substrate as underlying the cell arrays for reading and writing data of the cell arrays; first and second vertical wirings disposed outside of first and second boundaries that define a cell layout region of the cell arrays in the first direction to connect the bit lines of the respective cell arrays to the read/write circuit; and third vertical wirings disposed outside of one of third and fourth boundaries that define the cell layout region in the second direction to connect the word lines of the respective cell arrays to the read/write circuit.

    摘要翻译： 相变存储器件具有半导体衬底; 多个单元阵列，堆叠在半导体衬底之上，每个单元阵列具有以矩阵方式布置的存储单元，用于存储电阻值，作为通过存储单元的相变确定的数据，各通常连接多个存储单元的一端的位线 沿着矩阵的第一方向布置，每个字线通常连接沿矩阵的第二方向布置的多个存储单元的另一端; 在半导体衬底上形成的用于读取和写入单元阵列数据的单元阵列的读/写电路; 布置在第一和第二边界之外的第一和第二垂直布线，其限定第一方向上的单元阵列的单元布局区域，以将各单元阵列的位线连接到读/写电路; 以及第三垂直布线，其布置在第三和第四边界之一之外，其限定第二方向上的单元布局区域，以将各单元阵列的字线连接到读/写电路。

    Semiconductor memory device
    82.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US07085881B2

    公开(公告)日：2006-08-01

    申请号：US10681184

    申请日：2003-10-09

    申请人： Kenji Tsuchida ,  Haruki Toda ,  Hitoshi Kuyama

    发明人： Kenji Tsuchida ,  Haruki Toda ,  Hitoshi Kuyama

    IPC分类号： G06F12/02

    CPC分类号： G11C7/22 ,  G11C7/1072 ,  G11C2207/2281 ,  G11C2207/229

    摘要： A semiconductor memory device includes a bit line, a memory cell coupled to the bit line and a word line coupled to the memory cell. A first time between receiving a write command for a write operation in order to write data to the memory cell and the beginning of the write operation is different from a second time between receiving a refresh command for a refresh operation in order to refresh data stored in the memory cell and beginning the write operation.

    摘要翻译： 半导体存储器件包括位线，耦合到位线的存储单元和耦合到存储器单元的字线。 为了向存储器单元写入数据和写入操作的开始，接收写入操作的写入命令之间的第一次不同于接收刷新操作的刷新命令之间的第二次，以刷新存储在存储器单元中的数据 存储单元并开始写操作。

    System which extracts feature from fuzzy information and semiconductor integrated circuit device having the system
    83.
    发明授权
    System which extracts feature from fuzzy information and semiconductor integrated circuit device having the system 失效
    从模糊信息中提取特征的系统和具有该系统的半导体集成电路装置

    公开(公告)号：US07035833B2

    公开(公告)日：2006-04-25

    申请号：US10315946

    申请日：2002-12-11

    申请人： Haruki Toda

    发明人： Haruki Toda

    IPC分类号： G06N3/00

    CPC分类号： G06N7/043 ,  Y10S706/90

    摘要： A system includes a sensor section which receives fuzzy information inputs X containing a plurality of components and converts the plurality of components into a plurality of measurable input physical quantities, a converter which receives a plurality of input physical quantities and converts the input physical quantities into a plurality of pulses having pulse widths corresponding to the magnitudes thereof, and a feature extraction section (NF) which receives a plurality of pulses, selects the plurality of pulses by using a set pulse width as a reference, and extracts feature information items y0, y1, y2, . . . which express the features of the fuzzy information inputs X from the fuzzy information inputs X according to the number of selected pulses.

    摘要翻译： 一种系统包括传感器部分，其接收包含多个分量的模糊信息输入X并将多个分量转换成多个可测量的输入物理量;转换器，其接收多个输入物理量并将输入的物理量转换为 具有与其大小对应的脉冲宽度的多个脉冲和接收多个脉冲的特征提取部（NF），通过使用设定脉冲宽度作为基准选择多个脉冲，并且提取特征信息项y 0， y 1，y 2，... 。 。 其根据所选脉冲的数量从模糊信息输入X表达模糊信息输入X的特征。

    Non-volatile semiconductor memory device reading and writing multi-value data from and into pair-cells
    84.
    发明授权
    Non-volatile semiconductor memory device reading and writing multi-value data from and into pair-cells 失效
    非易失性半导体存储器件从多个单元读取和写入多值数据

    公开(公告)号：US06847555B2

    公开(公告)日：2005-01-25

    申请号：US10461398

    申请日：2003-06-16

    申请人： Haruki Toda

    发明人： Haruki Toda

    IPC分类号： G11C16/04 ,  G06K19/07 ,  G11C7/06 ,  G11C11/34 ,  G11C11/56 ,  G11C16/02 ,  G11C16/06 ,  G11C16/28 ,  H04N5/907

    CPC分类号： G11C7/065 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/28 ,  G11C16/3459 ,  G11C2211/5621

    摘要： A non-volatile semiconductor memory device includes: a memory cell array in which a plurality of electrically rewritable and non-volatile memory cells are arranged; a sense amplifier circuit configured to write M-value data (where, M is an integer equal to 4 or more) to pair-cells each constituted by simultaneously selected first and second memory cells connected to a pair of bit lines in the memory cell array, the M-value data being defined as a combination of different threshold levels of the first and second memory cells in M threshold levels to be set at each memory cell, and read M-value data stored in each pair-cell by sensing a difference between cell currents of the first and second memory cells; and a controller configured to control data write and read operations for the memory cell array.

    摘要翻译： 非挥发性半导体存储器件包括：存储单元阵列，其中布置有多个电可重写和非易失性存储单元; 一个读出放大器电路，被配置为将M值数据（其中，M是等于4或更大的整数）写入到由存储单元阵列中的一对位线连接的同时选择的第一和第二存储器单元构成的配对单元 M值数据被定义为要在每个存储单元设置的M个阈值电平中的第一和第二存储器单元的不同阈值电平的组合，并且通过感测差分来读取存储在每对单元中的M值数据 在第一和第二存储器单元的单元电流之间; 以及控制器，被配置为控制所述存储单元阵列的数据写入和读取操作。

    Clock-synchronous semiconductor memory device
    86.
    发明授权
    Clock-synchronous semiconductor memory device 失效

    公开(公告)号：US06510101B2

    公开(公告)日：2003-01-21

    申请号：US09983383

    申请日：2001-10-24

    申请人： Haruki Toda ,  Hitoshi Kuyama

    发明人： Haruki Toda ,  Hitoshi Kuyama

    IPC分类号： G11C800

    CPC分类号： G11C8/04 ,  G11C7/1045 ,  G11C7/1072 ,  G11C7/222 ,  G11C11/401 ,  G11C29/02 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50012 ,  G11C29/50016 ,  G11C2207/2254

    摘要： A semiconductor device includes a memory cell array, a control section and latency setting circuit. The control section configured to receive a clock signal and a first control signal, and configured to output a plurality of the data in synchronism with the clock signal after the first control signal is asserted, output of the data beginning a number of clock cycles (latency N) of the clock signal (latency N being a positive integer ≧2) after the first control signal is asserted, a different one of the data being output at each of the clock cycles after the output begins until the plurality of data is output. The latency setting circuit sets the latency N. The latency setting circuit includes at least one switch which permanently fixes a latency.

    Apparatus comprising clock control circuit, method of controlling clock signal and device using internal clock signal synchronized to external clock signal
    87.
    发明授权
    Apparatus comprising clock control circuit, method of controlling clock signal and device using internal clock signal synchronized to external clock signal 有权
    装置包括时钟控制电路，控制时钟信号的方法和使用与外部时钟信号同步的内部时钟信号的装置

    公开(公告)号：US06473865B1

    公开(公告)日：2002-10-29

    申请号：US09272171

    申请日：1999-03-18

    申请人： Masahiro Kamoshida ,  Haruki Toda ,  Tsuneaki Fuse ,  Yukihito Oowaki

    发明人： Masahiro Kamoshida ,  Haruki Toda ,  Tsuneaki Fuse ,  Yukihito Oowaki

    IPC分类号： G06F112

    CPC分类号： G06F1/3287 ,  G06F1/10 ,  G06F1/3203 ,  Y02D10/126 ,  Y02D10/171

    摘要： Each delay unit is divided into two delay unit groups, the preceding stage side and the succeeding stage side. To the delay unit group in the preceding stage side, power supply voltage is supplied via a power supply terminal, and to each delay unit of the delay unit group in the succeeding stage side, power supply voltage is supplied from the power supply terminal via a power supply control switch. A forward-pulse detecting circuit detects that forward pulse was propagated to a stage between the N-th stage and a stage a predetermined number of stages before the N-th, and outputs the detected result to the power supply control switch. With this operation, when forward pulse is propagated to the (N+1)th stage, power supply voltage is supplied also to the delay unit group in the succeeding stage side. As electric power is not supplied to the delay unit group in the succeeding stage side when forward pulse is not propagated to the (N+1)th stage, wasteful consumption of electric power is prevented.

    摘要翻译： 每个延迟单元被分成两个延迟单元组，即前级侧和后级侧。 对于前级侧的延迟单元组，经由电源端子向后级侧的延迟单元组的延迟单元供给电源电压，经由电源端子从电源端子供给电源电压 电源控制开关。 正向脉冲检测电路检测正向脉冲传播到第N级的第N级与预定级的级之间的级，并将检测结果输出到电源控制开关。 通过这种操作，当正向脉冲传播到第（N + 1）级时，电源电压也被提供给后级侧的延迟单元组。 当正向脉冲不传播到第（N + 1）级时，由于不向后级侧的延迟单元组提供电力，所以防止了浪费的电力消耗。

    Apparatus comprising clock control circuit and device using internal clock signal synchronized to external clock signal
    88.
    发明授权
    Apparatus comprising clock control circuit and device using internal clock signal synchronized to external clock signal 有权
    装置包括时钟控制电路和使用与外部时钟信号同步的内部时钟信号的装置

    公开(公告)号：US06393080B1

    公开(公告)日：2002-05-21

    申请号：US09271329

    申请日：1999-03-18

    申请人： Masahiro Kamoshida ,  Haruki Toda ,  Tsuneaki Fuse ,  Yukihito Oowaki

    发明人： Masahiro Kamoshida ,  Haruki Toda ,  Tsuneaki Fuse ,  Yukihito Oowaki

    IPC分类号： H04L700

    CPC分类号： G11C7/222 ,  G11C7/22 ,  H03K5/135 ,  H03L7/00 ,  H04L7/0337

    摘要： A state-holding circuit initializing circuit initializes state-holding circuit when propagation of forward pulse to the forward-pulse delay circuits in the last stage is detected. With this operation, synchronization is established in a short time from the resumption of outputting from a receiver. The state-holding circuit control circuit also controls the reset timing of the state-holding circuit. A forward-pulse adjusting circuit controls the pulse width of forward pulse to be supplied to the forward-pulse delay line. With this operation, the stages from the stage where rearward pulse was generated to the first stage are securely turned to the set state, enabling propagation of rearward pulse and synchronization is established. Thus, synchronization is established reliably even when output from a receiver stops or the duty of an external clock signal is heavy.

    摘要翻译： 状态保持电路初始化电路在正向脉冲传播到最后一级的正向脉冲延迟电路时，初始化状态保持电路。 通过该操作，从恢复从接收器输出的短时间内建立同步。 状态保持电路控制电路还控制状态保持电路的复位定时。 正向脉冲调整电路控制要提供给正向脉冲延迟线的正向脉冲的脉冲宽度。 通过该动作，从产生向后脉冲的阶段到第一阶段的阶段被牢固地转到设定状态，从而能够建立向后脉冲的传播和同步。 因此，即使从接收器的输出停止或外部时钟信号的占空比很重，也能够可靠地建立同步。

    Data transfer control of a video memory having a multi-divisional random access memory and a multi-divisional serial access memory
    89.
    发明授权
    Data transfer control of a video memory having a multi-divisional random access memory and a multi-divisional serial access memory 失效
    具有多分区随机存取存储器和多分区串行访问存储器的视频存储器的数据传输控制

    公开(公告)号：US06389521B1

    公开(公告)日：2002-05-14

    申请号：US09655939

    申请日：2000-09-06

    申请人： Haruki Toda

    发明人： Haruki Toda

    IPC分类号： G06F1202

    CPC分类号： G11C11/4096 ,  G11C7/1075

    摘要： An image memory has a random access memory array capable of being randomly accessed; a serial access memory array partitioned into n power of 2 (n>1) divisional areas cyclically and serially accessed in asynchronism with the random access memory; data transfer unit for transferring data between the random access memory array and the serial access memory array; a determined unit for determining a row of data to be transferred from the random access memory array to each of the divisional areas; and a designating unit for designating at least one of a top serial access address and a last serial access address respectively of each divisional area, wherein the data transfer unit executes data transfer from the random access memory array to the serial access memory array in accordance with outputs from the determining unit and the designating unit.

    摘要翻译： 图像存储器具有随机访问的随机存取存储器阵列; 串行访问存储器阵列，其被循环地和随机存取存储器不同步地循环地和串行访问地分成2（n> 1）个分区的n个功率; 数据传送单元，用于在随机存取存储器阵列和串行存取存储器阵列之间传送数据; 确定单元，用于确定要从所述随机存取存储器阵列传送到每个所述分区的数据行; 以及指定单元，用于分别指定每个分区的顶部串行访问地址和最后一个串行访问地址中的至少一个，其中数据传送单元执行从随机存取存储器阵列到串行访问存储器阵列的数据传送，根据 来自确定单元和指定单元的输出。

    Semiconductor memory system, and access control method for semiconductor memory and semiconductor memory
    90.
    发明授权
    Semiconductor memory system, and access control method for semiconductor memory and semiconductor memory 失效
    半导体存储器系统以及半导体存储器和半导体存储器的访问控制方法

    公开(公告)号：US06335904B1

    公开(公告)日：2002-01-01

    申请号：US09852037

    申请日：2001-05-10

    申请人： Kenji Tsuchida ,  Haruki Toda

    发明人： Kenji Tsuchida ,  Haruki Toda

    IPC分类号： G11C800

    CPC分类号： G11C11/4094 ,  G11C7/1072 ,  G11C7/12 ,  G11C7/22 ,  G11C2207/002

    摘要： In a semiconductor memory system, an SDRAM comprises a memory cell array 101 which is divided into a plurality of cell array blocks, a column decoder, a row decoder, and a sense amplifier circuit. In the SDRAM, a first operation mode with a first cycle time is set when successive access within a cell array block is conducted, a second operation mode with a second cycle time shorter than the first cycle time is set when successive access covering the cell array blocks being apart from each other is conducted and a third operation mode with a medium cycle time is set when successive access covering the cell array blocks adjacent to each other is conducted. With the above constitution, a high speed access can be realized without provision of a specific accessory circuit while suppressing overhead for a semiconductor chip size.

    摘要翻译： 在半导体存储器系统中，SDRAM包括被分成多个单元阵列块的存储单元阵列101，列解码器，行解码器和读出放大器电路。 在SDRAM中，当进行单元阵列块中的连续访问时，设置具有第一周期时间的第一操作模式，当覆盖单元阵列的连续访问时，设置具有比第一周期时间短的第二周期时间的第二操作模式 进行彼此分开的块，并且进行覆盖彼此相邻的单元阵列块的连续访问时，设定具有中等周期时间的第三操作模式。 利用上述结构，可以在不设置特定附件电路的同时抑制半导体芯片尺寸的开销，实现高速访问。