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    Semiconductor light emitting device
    81.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08895956B2

    公开(公告)日：2014-11-25

    申请号：US13218827

    申请日：2011-08-26

    申请人： Shigeya Kimura ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

    发明人： Shigeya Kimura ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L33/04 ,  H01L33/32 ,  H01L33/06

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。 发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。 阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。 阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。 在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。

    Semiconductor light emitting device and method for manufacturing same
    82.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08816367B2

    公开(公告)日：2014-08-26

    申请号：US13727147

    申请日：2012-12-26

    申请人： Jumpei Tajima ,  Kotaro Zaima ,  Hiroshi Ono ,  Shinji Yamada ,  Shigeya Kimura ,  Naoharu Sugiyama ,  Shinya Nunoue

    发明人： Jumpei Tajima ,  Kotaro Zaima ,  Hiroshi Ono ,  Shinji Yamada ,  Shigeya Kimura ,  Naoharu Sugiyama ,  Shinya Nunoue

    IPC分类号： H01L33/22

    CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405

    摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first and second semiconductor layers and a light emitting layer. The first electrode includes a first region, a second region, and a third region provided between them. The first semiconductor layer includes a first portion on the first region and a second portion on the second region. The light emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and a sixth portion on the fourth portion. The insulating layer is provided between the first and second portions on the third region and between the third and fourth portions. The second electrode includes a seventh portion provided on the insulating layer, eighth and ninth portions contacting side surfaces of the fifth and sixth portions.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极，第一和第二半导体层以及发光层。 第一电极包括第一区域，第二区域和设置在它们之间的第三区域。 第一半导体层包括第一区域上的第一部分和第二区域上的第二部分。 发光层包括第一部分上的第三部分和第二部分上的第四部分。 第二半导体层包括第三部分上的第五部分和第四部分上的第六部分。 绝缘层设置在第三区域上的第一和第二部分之间以及第三和第四部分之间。 第二电极包括设置在绝缘层上的第七部分，与第五和第六部分的侧表面接触的第八和第九部分。

    Method for manufacturing nitride semiconductor device
    83.
    发明授权
    Method for manufacturing nitride semiconductor device 有权
    氮化物半导体器件的制造方法

    公开(公告)号：US08809085B2

    公开(公告)日：2014-08-19

    申请号：US13222238

    申请日：2011-08-31

    申请人： Taisuke Sato ,  Naoharu Sugiyama ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Shinya Nunoue

    发明人： Taisuke Sato ,  Naoharu Sugiyama ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Shinya Nunoue

    IPC分类号： H01L33/00 ,  H01L33/22

    CPC分类号： H01L33/0079 ,  H01L33/22

    摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

    摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

    Semiconductor light emitting device
    85.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08698123B2

    公开(公告)日：2014-04-15

    申请号：US13213373

    申请日：2011-08-19

    申请人： Tomonari Shioda ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

    发明人： Tomonari Shioda ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

    IPC分类号： H01L29/06 ,  H01L27/15

    CPC分类号： H01L33/06 ,  H01L33/04 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 n型半导体层包括氮化物半导体。 p型半导体层包括氮化物半导体。 发光部分设置在n型和p型半导体层之间，并且包括n侧阻挡层和第一发光层。 第一发光层包括第一阻挡层，第一阱层和第一AlGaN层。 第一阻挡层设置在n侧势垒层和p型半导体层之间。 第一阱层与n侧和第一阻挡层之间的n侧势垒层接触。 第一AlGaN层设置在第一阱层和第一势垒层之间。 从发光部发出的光的峰值波长λp长于515nm。

    Semiconductor light emitting device
    87.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08674338B2

    公开(公告)日：2014-03-18

    申请号：US12871285

    申请日：2010-08-30

    申请人： Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/325

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。 最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。 最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。 最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。 最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。 （wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。

    Semiconductor light emitting device
    89.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08643044B2

    公开(公告)日：2014-02-04

    申请号：US13222912

    申请日：2011-08-31

    申请人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。