摘要:
A liquid crystal television apparatus includes a tuner, a signal processor, a liquid crystal cell, a light source for backlight, an inverter, and a power supply, includes a first circuit board including a single-sided board, a second circuit board including a multilayered board, and a connector that electrically connects the first and second circuit boards. An area of the second circuit board is smaller than the first circuit board. The signal processor is mounted on the second circuit board. On the first circuit board, the tuner is arranged in a lower portion of a left or right side of the first circuit board, the inverter is arranged in an upper portion of an opposite side of the first circuit board to the tuner, the power supply is arranged in a lower portion in the opposite side, and the connector is arranged in an upper portion of the same side.
摘要:
A storage apparatus includes a primary storage unit that stores data received from a host computer in a first storage area; a secondary storage unit that stores the data stored in the first storage area in a second storage area; a virtual-storage-area setting unit that logically combines the first storage area and the second storage area to set a plurality of virtual storage areas; and a data-storage control unit that controls data storage in such a manner that the data stored in the first storage area that belongs to a predetermined virtual storage area is stored in the second storage area that belongs to the predetermined virtual storage area.
摘要:
A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.
摘要:
A semiconductor device has a transistor of a first conductivity type formed on a semiconductor substrate and having a first gate insulating film and a first gate electrode and a transistor of a second conductivity type having a second gate insulating film and a second gate electrode. The first gate electrode is a metal gate electrode having a metal film and the second gate electrode is a fully-silicided gate electrode made of a silicide film.
摘要:
A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.
摘要:
A mobile unit moves on a reference plane. The mobile unit has an object detection apparatus for detecting an object on the reference plane. The object detection apparatus includes a camera, a mirror, and a computer. The mirror cuts an image received by the camera such that the camera receives an image that is divided into a reference plane image and an object image. The reference plane image contains the reference plane. The object image contains the object and does not contain the reference plane. Therefore, the distance measuring apparatus can easily separate the region including the object and the region including no object, and accurately detect the distance to the object.
摘要:
A sheet for holding and protecting semiconductor wafers which can closely follow up even a wafer surface having large roughness is disclosed. The hot-melt sheet for holding and protecting semiconductor is applied to a surface of a semiconductor wafer to thereby hold and protect the semiconductor wafer in processing the semiconductor wafer. The sheet comprises a hot-melt layer A having a melting point of 105° C. or below. A pressure-sensitive adhesive layer B may be formed on one surface of the hot-melt layer A. A reinforcing layer C having a melting point higher by 20° C. or more than that of hot-melt layer A may further be formed on one surface of the hot-melt layer A, provided that when the pressure-sensitive adhesive layer B is formed on one surface of the hot-melt layer A, the reinforcing layer C is formed on the opposite surface thereof.
摘要:
An enzyme having carbonyl reduction activity of reducing a carbonyl compound asymmetrically to produce an optically active alcohol, a DNA coding the enzyme, a plasmid having the DNA, a transformant which is a cell transformed with the plasmid, and a production method of an optically active alcohol using the enzyme and/or the transformed cell are provided.
摘要:
A method for producing rare earth metal-nickel hydrogen occlusive alloy ingot that contains 90 vol % or more of crystals having a crystal grain size of 1 to 50 .mu.m as measured along a short axis of the crystal and 1 to 100 .mu.m as measured along a long axis of the crystal. The method for producing the rare earth metal-nickel hydrogen occlusive alloy ingot involves melting a rare earth metal-nickel alloy and uniformly solidifying the alloy melt to have a thickness of 0.1 to 20 mm under cooling conditions of a cooling rate of 10.degree. to 1000.degree. C./sec and a sub-cooling degree of 10.degree. to 500.degree. C.
摘要:
An alloy ingot for permanent magnet consists essentially of rare earth metal and iron and optionally boron. The two-component alloy ingot contains 90 vol % or more of crystals having a crystal grain size along a short axis of 0.1 to 100 .mu.m and that along a long axis of 0.1 to 100 .mu.m. The three-component alloy ingot contains 90 vol % or more of crystals having a crystal grain size along a short axis of 0.1 to 50 .mu.m and that along a long axis of 0.1 to 100 .mu.m. The alloy ingot is produced by solidifying the molten alloy uniformly at a cooling rate of 10.degree. to 1000.degree. C./sec. at a sub-cooling degree of 10.degree. to 500.degree. C. A permanent magnet and anisotropic powders are produced from the alloy ingot.