摘要:
The resin-coated metal sheet is composed of: a metal sheet; a lower resin layer containing a hydrophilic copolyester, formed on at least one side of the metal sheet; and an upper resin layer containing a polyester containing a diol component composed of a diol derivative of 1 to 10% by mole of alicyclic compound and 99 to 90% by mole of ethylene glycol, and a dicarboxylic acid component consisting of terephthalic acid, formed on the lower resin layer. The sum of cyclic trimer of alkylene terephthalate existing in the upper resin layer and the lower resin layer is 0.9% or less by mass. Since the manufacture of food cans using the resin-coated metal sheet does not induce white haze phenomenon and retort blushing phenomenon on outer surface of the can even after retorting, the decorative appearance on outer surface of the can is not deteriorated.
摘要:
An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.
摘要:
A laminated steel sheet for a two-piece can body with a high strain level satisfying the following formulae, the polyester resin layer composing the laminated steel sheet having a center line surface roughness (Ra) of 0.2 μm to 1.8 μm: r1≦r, 0.1≦r1/R≦0.25, and 1.5≦h/(R−r)≦4 wherein h is the height of the two-piece can body, r is the maximum radius, r1 is the minimum radius, and R is the radius of the circular laminated steel sheet before forming having the same weight as the can body.
摘要:
[Problems] To provide a semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by means of favorable nitrogen concentration profile of a gate insulating film, and to provide a method for manufacturing such a device.[Means for Solving Problems] a semiconductor device fabricating method according to a first aspect of the invention, a method for fabricating a semiconductor storage device that operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, includes a step for introducing an oxynitriding species previously diluted by plasma excitation gas, into a plasma processing apparatus, generating an oxynitriding species by means of a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.
摘要:
The resin-coated metal sheet has: a metal sheet; a lower polyester resin layer having 0.03 or smaller plane orientation factor and 5 to 20 μm of thickness, being formed on at least one side of the metal sheet; and an upper polyester resin layer containing 0.1 to 5% by mass of olefin wax, having larger than 0.06 and not larger than 0.15 of plane orientation factor and 0.5 to 10 μm of thickness, being formed on the lower polyester resin layer. The metal sheet assures excellent taking-out performance of the contents also those of low fat and high protein foods, and provides formability and adhesion requested for the container working.
摘要:
There is disclosed a confocal microspectroscope comprising an excitation light source having two or more semiconductor light sources formed on the same chip by a semiconductor process and covering a predetermined wavelength region, a semiconductor light source control unit for controlling on/off of the semiconductor light sources, and a microscope main body having a scanning unit for scanning light from the excitation light source on a specimen and a confocal detector for detecting the light emitted from the specimen, wherein wavelengths of the light emitted from the two or more semiconductor light sources differ by a predetermined wavelength.
摘要:
An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.
摘要:
According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation processing as described above, the plasma nitridation processing is further applied to the insulating film as necessary. Thereby, it is possible to form the insulating film with an excellent electrical characteristic.
摘要:
A light scanning type confocal microscope includes a light source unit that projects an excitation light beam, a scanning optical system that scans the excitation light beam, an objective lens that applies the excitation light beam to a sample, a separation optical element that separates the excitation light and detection light generated by the sample, a confocal detection unit that obtains a confocal effect, and a spectral detection device that spectrally detects the detection light. The spectral detection device has a spectroscopic element that spectrally separates the detection light, a light extracting unit that extracts light in a wavelength band from the light spectrally separated by the spectroscopic element, a detector that detects the light extracted by the light extracting unit, and a wavelength band shifting unit that shifts a wavelength band of light to be extracted by the light extracting unit.