公开(公告)号：US06946233B2

公开(公告)日：2005-09-20

申请号：US10200647

申请日：2002-07-22

申请人： Tsunehiro Nishi ,  Takeshi Kinsho

发明人： Tsunehiro Nishi ,  Takeshi Kinsho

IPC分类号： G03F7/032 ,  G03F7/004 ,  G03F7/039 ,  C08F36/00 ,  C08F118/02 ,  G03C5/00

CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： Provided are a resist material having markedly high resolution and etching resistance of a practically usable level, and being useful for fine microfabrication; a patterning method using the resist material; and a polymer useful as a base resin for the resist material. More specifically, provided are a polymer having a weight-average molecular weight of 1,000 to 500,000, which comprises one or more repeating units selected from the group consisting of repeating units represented by formulae (1) to (3) below; and one or more repeating units of the formula (4) below; and a resist material containing the polymer.

摘要翻译： 提供具有实际可用水平的显着高分辨率和耐蚀刻性的抗蚀剂材料，并且可用于精细微细加工; 使用抗蚀剂材料的图案化方法; 以及可用作抗蚀剂材料的基础树脂的聚合物。 更具体地说，提供了重均分子量为1,000〜500,000的聚合物，其包含一个或多个选自下述由式（1）至（3）表示的重复单元的重复单元; 和一个或多个下式（4）的重复单元; 和含有聚合物的抗蚀剂材料。

公开(公告)号：US20110033799A1

公开(公告)日：2011-02-10

申请号：US12850266

申请日：2010-08-04

申请人： Takeru Watanabe ,  Tsunehiro Nishi ,  Masashi Iio

发明人： Takeru Watanabe ,  Tsunehiro Nishi ,  Masashi Iio

IPC分类号： G03F7/20 ,  C08F24/00 ,  C08F20/04 ,  C08F20/10 ,  G03F7/004

CPC分类号： G03F7/70466 ,  C08F220/60 ,  C08F224/00 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

摘要： A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation.

摘要翻译： 通过（1）将第一正性抗蚀剂组合物涂布在基材上，烘烤，图案曝光，PEB和显影以形成包括大面积特征的第一正性抗蚀剂图案，（2）涂覆抗蚀剂改性组合物，形成图案，所述抗蚀剂改性组合物包含 碱性含氮化合物和加热以改性第一抗蚀剂图案，和（3）在其上涂覆第二正性抗蚀剂组合物，图案曝光和显影以形成第二抗蚀剂图案。 第一抗蚀剂图案中的大面积特征在第二图案形成之后具有至少50％的膜保持性。

公开(公告)号：US20070231741A1

公开(公告)日：2007-10-04

申请号：US11730427

申请日：2007-04-02

申请人： Tsunehiro Nishi ,  Motohide Yamazaki ,  Junji Tsuchiya ,  Takeru Watanabe

发明人： Tsunehiro Nishi ,  Motohide Yamazaki ,  Junji Tsuchiya ,  Takeru Watanabe

IPC分类号： G03C1/00

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/2041

摘要： A positive resist composition comprising a resin component having a solubility in an alkaline developer that increases under the action of an acid, a compound capable of generating an acid in response to actinic radiation, and an acidic organic compound having a molecular weight of at least 150 exhibits a high resolution and is effective in minimizing defects when processed by the photolithography. The composition is thus quite effective for precise micropatterning.

摘要翻译： 一种正型抗蚀剂组合物，其包含在酸性作用下在碱性显影剂中具有溶解度的树脂组分，能够响应于光化辐射产生酸的化合物和分子量至少为150的酸性有机化合物 表现出高分辨率，并且在通过光刻处理时有效地最小化缺陷。 因此，组合物对于精确的微图案非常有效。

公开(公告)号：US08658346B2

公开(公告)日：2014-02-25

申请号：US12850266

申请日：2010-08-04

申请人： Takeru Watanabe ,  Tsunehiro Nishi ,  Masashi Iio

发明人： Takeru Watanabe ,  Tsunehiro Nishi ,  Masashi Iio

IPC分类号： G03F7/38 ,  G03F7/20

CPC分类号： G03F7/70466 ,  C08F220/60 ,  C08F224/00 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

摘要： A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation.

摘要翻译： 通过（1）将第一正性抗蚀剂组合物涂布在基材上，烘烤，图案曝光，PEB和显影以形成包括大面积特征的第一正性抗蚀剂图案，（2）涂覆抗蚀剂改性组合物，形成图案，所述抗蚀剂改性组合物包含 碱性含氮化合物和加热以改性第一抗蚀剂图案，和（3）在其上涂覆第二正性抗蚀剂组合物，图案曝光和显影以形成第二抗蚀剂图案。 第一抗蚀剂图案中的大面积特征在第二图案形成之后具有至少50％的膜保持性。

公开(公告)号：US20050031988A1

公开(公告)日：2005-02-10

申请号：US10910308

申请日：2004-08-04

申请人： Takeru Watanabe ,  Tsunehiro Nishi ,  Kenji Funatsu ,  Takao Yoshihara

发明人： Takeru Watanabe ,  Tsunehiro Nishi ,  Kenji Funatsu ,  Takao Yoshihara

IPC分类号： C08F220/18 ,  G03C1/76 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0397

摘要： A polymer comprising recurring units of formulae (1), (2) and (3) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2 and R5 are H or CH3, R3 and R4 are H or OH, and X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane structure, represented by any of formulae (X-1) to (X-4): wherein R6 is a C1-C10 alkyl group. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized line edge roughness and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.

摘要翻译： 包含式（1），（2）和（3）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2和R 5是H或CH 3，R 3和R 4是H或OH，X是具有双环[2.2.1] 庚烷结构，由式（X-1）至（X-4）中的任一个表示：其中R 6是C 1 -C 10烷基。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的线边缘粗糙度，并且借助于电子束或深紫外线用于VLSI制造的微图案化。

公开(公告)号：US06541179B2

公开(公告)日：2003-04-01

申请号：US09811695

申请日：2001-03-20

申请人： Jun Hatakeyama ,  Youichi Ohsawa ,  Tsunehiro Nishi ,  Jun Watanabe

发明人： Jun Hatakeyama ,  Youichi Ohsawa ,  Tsunehiro Nishi ,  Jun Watanabe

IPC分类号： G03F7004

CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0395 ,  Y10S430/122

摘要： A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is a monovalent cyclic or bridgedring C3-20, hydrocarbon group, R2 is hydroxyl, nitro, halogen, or a straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N, S or halogen atom, K− is a non-nucleophilic counter ion, x is equal to 1 or 2, and y is an integer of 0-3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.

摘要翻译： 抗蚀剂组合物含有基础树脂，光致酸产生剂和溶剂。 光致酸产生剂是式（1）的锍盐，R1是一价环状或桥连的C3-20，烃基，R2是羟基，硝基，卤素或直链，支链或环状的一价C1-15烃基，其可以 含有O，N，S或卤原子，K-是非亲核反离子，x等于1或2，y是0-3的整数。 抗蚀剂组合物对ArF准分子激光敏感，具有良好的灵敏度和分辨率，并形成有利于蚀刻的厚膜。

公开(公告)号：US06420085B1

公开(公告)日：2002-07-16

申请号：US09663830

申请日：2000-09-15

申请人： Tsunehiro Nishi ,  Youichi Ohsawa ,  Jun Hatakeyama

发明人： Tsunehiro Nishi ,  Youichi Ohsawa ,  Jun Hatakeyama

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/122

摘要： A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is hydroxyl, nitro, or straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N or S, and two R1 groups may form a ring together wherein the R1 groups are straight, branched or cyclic divalent C1-15 hydrocarbon groups which may contain O, N or S, K− is a non-nucleophilic counter ion, x is 1 or 2, and y is 0, 1, 2 or 3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.

摘要翻译： 抗蚀剂组合物含有基础树脂，光致酸产生剂和溶剂。 光酸产生剂是式（1）的锍盐，R1是可以含有O，N或S的羟基，硝基或直链，支链或环状的一价C 1〜C 15烃基，两个R 1基可以一起形成环， R1基团是可以含有O，N或S的直链，支链或环状二价C1-15烃基，K-是非亲核抗衡离子，x是1或2，y是0,1,2或3 抗蚀剂组成对ArF准分子激光敏感，具有良好的灵敏度和分辨率，形成了有利于蚀刻的厚膜。

公开(公告)号：US6030746A

公开(公告)日：2000-02-29

申请号：US831749

申请日：1997-04-01

申请人： Takeshi Nagata ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

发明人： Takeshi Nagata ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

IPC分类号： C07C43/205 ,  C07C43/30 ,  C07C43/303 ,  C07C43/315 ,  C07C43/32 ,  C07C69/28 ,  C07C69/30 ,  C07C69/712 ,  C07C69/96 ,  C07F7/06 ,  C07F7/08 ,  C07F7/18 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： C07C43/303 ,  C07C69/96 ,  G03F7/0045 ,  C07C2101/14 ,  G03F7/039 ,  Y10S430/118

摘要： Di- or triphenyl monoterpene hydrocarbon derivatives of formula (1) are novel. ##STR1## X is a di- or trivalent monoterpene hydrocarbon group, R.sup.1 to R.sup.3 are hydrogen or an alkyl, alkoxy, alkoxyalkyl, alkenyl or aryl group, R.sup.4 is hydrogen or an acid labile group, at least one R.sup.4 being an acid labile group, letter n is an integer of 1-5, j, k and m are integers of 0-4, n+j+k+m=5, and p is 2 or 3. When used as a dissolution rate regulator, the compound of formula (1) exerts remarkably enhanced dissolution inhibitory effect and minimized light absorption in the deep-UV region. A chemically amplified positive resist composition having the compound of formula (1) blended therein is highly sensitive to actinic radiation such as deep-UV radiation, electron beam and X-ray, especially KrF excimer laser light, and has improved sensitivity, resolution and plasma etching resistance.

摘要翻译： 式（1）的二 - 或三苯基单萜烃衍生物是新颖的。 X是二价或三价单萜烃基，R 1至R 3是氢或烷基，烷氧基，烷氧基烷基，烯基或芳基，R 4是氢或酸不稳定基团，至少一个R 4是酸不稳定基团，字母n 是1-5的整数，j，k和m是0-4，n + j + k + m = 5的整数，p是2或3.当用作溶出速率调节剂时，式 1）在深紫外区域发挥显着增强的溶解抑制作用和最小化的光吸收。 具有其中混合的式（1）化合物的化学放大正性抗蚀剂组合物对光化辐射如深UV辐射，电子束和X射线，特别是KrF准分子激光具有高度敏感性，并且具有改善的灵敏度，分辨率和等离子体 耐腐蚀性。

公开(公告)号：US08129099B2

公开(公告)日：2012-03-06

申请号：US12370901

申请日：2009-02-13

申请人： Katsuya Takemura ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Kazuhiro Katayama ,  Toshinobu Ishihara

发明人： Katsuya Takemura ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Kazuhiro Katayama ,  Toshinobu Ishihara

IPC分类号： G03F7/24 ,  G03F7/40 ,  G03F7/039 ,  G03F7/075

CPC分类号： H01L21/0337 ,  G03F7/0035 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/40 ,  H01L21/0338

摘要： Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

摘要翻译： 通过涂布第一化学放大的正型抗蚀剂组合物形成双重图案，该组合物包含含酸不稳定基团的树脂和光酸产生剂，并且预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，PEB和 用碱性显影剂显影以形成第一正性抗蚀剂图案，将第一抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆第二抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能量辐射， PEB，并用碱性显影剂显影以形成第二正性抗蚀剂图案。 最后的发展步骤包括将反转的第一抗蚀剂图案溶解并实现反转印。

公开(公告)号：US06274286B1

公开(公告)日：2001-08-14

申请号：US09105003

申请日：1998-06-26

申请人： Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Nagata ,  Shigehiro Nagura

发明人： Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Nagata ,  Shigehiro Nagura

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  Y10S430/106

摘要： A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2): wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0. The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.

摘要翻译： 一种化学放大正型抗蚀剂组合物，其包含至少一种下列通式（1）或（2）的碱性化合物：其中R 1，R 2，R 3，R 7和R 8独立地为具有1至20个碳的正，支链或环状亚烷基 原子，R 4，R 5，R 6，R 9和R 10独立地是氢，具有1至20个碳原子的烷基或氨基，R 4和R 5，R 5和R 6，R 4和R 6，或R 8，R 5和R 5， R 10一起可以形成环，字母k，m和n是0至20的整数，条件是当k，m或n等于0时，从R4，R5，R6，R9和R10排除氢。 本发明的抗蚀剂组合物对于防止抗蚀剂膜变薄和增加隔离图案的聚焦边缘是有效的。