公开(公告)号：US20200251615A1

公开(公告)日：2020-08-06

申请号：US16804504

申请日：2020-02-28

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/20 ,  H01L33/62 ,  H01L33/48 ,  H01L33/12 ,  H01L33/00 ,  H01L33/38 ,  H01L21/02 ,  H01L33/08

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

公开(公告)号：US20200152823A1

公开(公告)日：2020-05-14

申请号：US16737828

申请日：2020-01-08

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/32 ,  H01L33/06 ,  H01L27/15 ,  H05B33/08

Abstract: Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

公开(公告)号：US10580935B2

公开(公告)日：2020-03-03

申请号：US16377897

申请日：2019-04-08

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L21/00 ,  H01L33/20 ,  H01L33/08 ,  H01L21/02 ,  H01L33/00 ,  H01L33/38 ,  H01L33/12 ,  H01L33/48 ,  H01L33/62

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

公开(公告)号：US20190296185A1

公开(公告)日：2019-09-26

申请号：US16441477

申请日：2019-06-14

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Scott D. Schellhammer

IPC: H01L33/00 ,  H01L31/0352 ,  H01L31/0236 ,  H01L31/02 ,  H01L33/62 ,  H01L33/48 ,  H01L33/32 ,  H01L33/22 ,  H01L25/16 ,  H01L25/075 ,  H01L33/06

Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.

公开(公告)号：US20190237625A1

公开(公告)日：2019-08-01

申请号：US16377871

申请日：2019-04-08

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/36 ,  H01L33/06 ,  H01L33/62 ,  H01L33/42 ,  H01L33/40

CPC classification number: H01L33/382 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/36 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

公开(公告)号：US10361245B2

公开(公告)日：2019-07-23

申请号：US15976805

申请日：2018-05-10

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L27/15 ,  H01L33/00 ,  H01L23/60 ,  H01L33/38 ,  H01L33/40

Abstract: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

公开(公告)号：US10243120B2

公开(公告)日：2019-03-26

申请号：US15982330

申请日：2018-05-17

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Kevin Tetz

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58 ,  H01L51/52 ,  H01L25/075

Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.

公开(公告)号：US20190058097A1

公开(公告)日：2019-02-21

申请号：US16167172

申请日：2018-10-22

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Kevin Tetz

IPC: H01L33/58 ,  H01L33/00 ,  H01L33/50 ,  H01L51/52

CPC classification number: H01L33/58 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/50 ,  H01L33/54 ,  H01L51/5275 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.

公开(公告)号：US10134969B2

公开(公告)日：2018-11-20

申请号：US15658202

申请日：2017-07-24

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/62 ,  H01L21/78 ,  H01L27/15 ,  H01L33/38 ,  H01L27/04 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/64 ,  H01L25/075 ,  H01L33/00 ,  H01L33/58

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

公开(公告)号：US10103290B2

公开(公告)日：2018-10-16

申请号：US15474786

申请日：2017-03-30

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/08 ,  H01L33/38 ,  H01L33/12 ,  H01L33/48 ,  H01L33/62

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.